Toshiba TA8266HQ User guide

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TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA8266HQ
Max Power 35 W BTL ×4 ch Audio Power IC
The TA8266HQ is 4 ch BTL audio power amplifier for car audio
application.
This IC can generate more high power: POUTMAX = 35 W as it
is included the pure complementary PNP and NPN transistor
output stage.
It is designed low distortion ratio for 4 ch BTL audio power
amplifier, built-in stand-by function, muting function, and
diagnosis circuit which can detect output to VCC/GND short and
over voltage input mode.
Additionally, the AUX amplifier and various kind of protector
for car audio use is built-in.
Features
•High power : POUTMAX (1) = 35 W (typ.)
(VCC = 14.4 V, f = 1 kHz, JEITA max, RL= 4 Ω)
: POUTMAX (2) = 31 W (typ.)
(VCC = 13.7 V, f = 1 kHz, JEITA max, RL= 4 Ω)
: POUT (1) = 23 W (typ.)
(VCC = 14.4 V, f = 1 kHz, THD = 10%, RL= 4 Ω)
: POUT (2) = 20 W (typ.)
(VCC = 13.2 V, f = 1 kHz, THD = 10%, RL= 4 Ω)
•Built-in diagnosis circuit (pin 25)
•Low distortion ratio: THD = 0.02% (typ.)
(VCC = 13.2 V, f = 1 kHz, POUT = 5 W, RL= 4 Ω)
•Low noise: VNO = 0.18 mVrms (typ.)
(VCC = 13.2 V, Rg= 0 Ω, GV= 34dB, BW = 20 Hz~20 kHz)
•Built-in stand-by switch function (pin 4)
•Built-in muting function (pin 22)
•Built-in AUX amplifier from single input to 2 channels output (pin 16)
•Built-in various protection circuit
: Thermal shut down, over voltage, out to GND, out to VCC, out to out short, speaker burned
•Operating supply voltage: VCC (opr) = 9~18 V
Note 1: Install the product correctly. Otherwise, it may result in break down, damage and/or degradation to the
product or equipment.
Note 2: These protection functions are intended to avoid some output short circuits or other abnormal conditions
temporarily. These protect functions do not warrant to prevent the IC from being damaged.
- In case of the product would be operated with exceeded guaranteed operating ranges, these
protection features may not operate and some output short circuits may result in the IC being
damaged.
Weight: 7.7 g (typ.)

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Block Diagram
Note3: Some of the functional blocks, circuits, or constants in the block diagram may be omitted or simplified for
explanatory purpose.
RL
RL
RL
11
9
8
7
5
2
3
17
18
19
21
24
23
12
15
14
120 6
RL
IN1
IN2
IN3
AUX IN
IN4
13
16
C1
C1
C1
C1
PRE-GND
10 25422
OUT1 (+)
PW-GND1
OUT1 (−)
OUT2 (+)
PW-GND2
OUT2 (−)
OUT3 (+)
PW-GND3
OUT3 (−)
OUT4 (+)
PW-GND4
OUT4 (−)
TAB VCC1 VCC2
C3
R1
C4
C2
: PRE-GND
: PW-GND
STBY
DIAGNOSIS
OUTRIP MUTE
C5
C6

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Caution and Application Method
(Description is made only on the single channel.)
1. Voltage Gain Adjustment
This IC has no NF (negative feedback) terminals. Therefore, the voltage gain can’t adjusted, but it makes
the device a space and total costs saver.
The voltage gain of Amp.1 : GV1 =8dB
The voltage gain of Amp.2A, B : GV2 =20dB
The voltage gain of BLT Connection : GV (BTL) =6dB
Therefore, the total voltage gain is decided by expression below.
GV=GV1 +GV2 +GV (BTL) =8 +20 +6 =34dB
2. Stand-by SW Function (pin 4)
By means of controlling pin 4 (stand-by terminal) to
high and low, the power supply can be set to ON and
OFF. The threshold voltage of pin 4 is set at about
3VBE (typ.), and the power supply current is about 2
µA (typ.) at the stand-by state.
Control Voltage of pin 4: VSB
Stand-by Power VSB (V)
ON OFF 0~1.5
OFF ON 3~VCC
Adjustage of Stand-by SW
(1) Since VCC can directly be controlled to ON or OFF by the microcomputer, the switching relay can be
omitted.
(2) Since the control current is microscopic, the switching relay of small current capacity is satisfactory
for switching
Amp. 1
Input
Amp. 2A
Amp. 2B
Figure 1 Block Diagram
Figure 2 With pin 4 set to High,
Power is turned ON
ON 4
OFF
10 kΩ
to BIAS
CUTTING CIRCUIT
≈2VBE
VCC
Power

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3. Muting Function (pin 22)
By means of controlling pin 22 less than 0.5 V, it can make the audio muting condition.
The muting time constant is decided by R1and C4and these parts is related the pop noise at power
ON/OFF.
The series resistance; R1 must be set up less than 10 kΩto get enough muting attenuation.
The muting function have to be controlled by a transistor, FET and micro-controller port which has
IMUTE >250 µA ability.
Pin 22 terminal voltage has the temperature characteristics of 4.6 V (low temperature) to 3.2 V (high
temperature).
Therefore, it is need to design with attention as using the micro-controller of which operating voltage is
less than 5 V.
Terminal 22 may not be pulled up and shall be controlled by OPEN/LOW.
When it is obliged to do, it must be pulled up via diode, because it has to defend flowing reverse current
to internal circuit of pin 22.
VCC
Small current capacity switch
BATTERY
Stand-By VCC
DIRECTLY FROM
MICROCOMPUTER BATTERY
Stand-By
– Stand-by Switch Method –
Figure 3
– Conventional Method –
VCC
Large current capacity switch
BATTERY
VCC FROM
MICROCOMPUTER
BATTERY
RELAY
Figure 5 Mute Attenuation −VMUTE (V)
PointAvoltage: VMUTE (V)
ATT – VMUTE
Mute attenuation ATT (dB)
10 kΩ5 kΩ
VCC =13.2 V
Po=10 W
PL =4 Ω
f =1 kHz
−100
0 0.4 0.8 1 1.2 1.6 2 2.4 2.8 3
−80
−60
−40
−20
0
20
Figure 4 Muting Function
R1
I (100 µA)
22
IMUTE
IMUTE (OFF)
A
VMUTE
C4
<Recommended Application>
<Application for pulled up>
R1
I (100 µA)
22
IMUTE
IMUTE (OFF)
VMUTE
C4

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4. AUX Input (pin 16)
The pin 16 is for input terminal of AUX
amplifier.
The total gain is 0dB by using of AUX amplifier.
Therefore, the µ-COM can directly drive the
AUX amplifier.
BEEP sound or voice synthesizer signal can be
input to pin 16 directly.
When AUX function is not used, this pin must be
connected to PRE-GND (pin 13) via a capacitor.
5. Diagnosis Output (pin 25)
This diagnosis output terminal of pin 25 has open collector output structure on chip as shown in Figure 7.
In case diagnosis circuit that detect unusual case is operated, NPN transistor (Q1) is turned on.
It is possible to protect all the system of apparatus as well as power IC protection.
In case of being unused this function, use this IC as open-connection on pin 25.
5.1 In Case of Shorting Output to VCC/GND or Over Voltage Power Supplied
NPN transistor (Q1) is turned on.
Threshold of over voltage protection: VCC =22 V (typ.)
5.2 In Case of Shorting Output to Output
NPN transistor (Q1) is turned on and off in response to the input signal voltage.
25
5 V
LED/LCD
ALARM
REGULATOR →OFF
(Flashing)
(Announcement from a speaker.)
(Relay →OFF)
µ-COM
MEMORY (Count and record)
Figure 8 Application 1
Figure 6 AUX Input
20dB AMP.
IN
OUT (+)
OUT (−)
16
AUX-IN
−20dB
AUX AMP
µ-COM
Figure 7 Self Diagnosis Output
pin 25: Open collector output (active low)
OUTPUT SHORT
PROTECTOR
OVER VOLTAGE
PROTECTOR
25
Q1
5 V
Q1 is turned on
GND
5 V
t

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6. Prevention of speaker burning accident (In Case of Rare Short Circuit of Speaker)
When the direct current resistance between OUT +and OUT −terminal becomes 1 Ωor less and output
current over 4 A flows, this IC makes a protection circuit operate and suppresses the current into a speaker.
This system makes the burning accident of the speaker prevent as below mechanism.
<The guess mechanism of a burning accident of the speaker>
Abnormal output offset voltage (voltage between OUT +and OUT −) over 4 V is made by the external
circuit failure.(Note 4)
↓
The speaker impedance becomes 1 Ωor less as it is in a rare short circuit condition.
↓
The current more than 4 A flows into the speaker and the speaker is burned.
Note 4: It is appeared by biased input DC voltage
(for example, large leakage of the input capacitor, short-circuit between copper patterns of PCB.)
Current into a speaker
Speaker impedance
Less than 4 Ω
Figure 9
About 1 Ω4 Ω
Operating point of protector

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6.1 Applications
When output terminals short-circuit to VCC or GND, the voltage of 25pin is fixed to “L”.
And when shorting OUT +to OUT −, “L” and “H” are switched according to an input signal.
Therefore, it is possible to judge how the power IC condition is if a micro-controller detects the
25pin voltage that is smoothed out with LPF.
It is recommend that the threshold voltage (Vth) is set up as higher as possible because output level
of LPF is changed according to an input signal.
(for example, Vth is set up to 4 V if 25pin is pulled up to 5 V line.)
Output voltage of L.P.F.
Output power
5 V
Figure 10
Operating point of protector

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Absolute Maximum Ratings (Ta =25°C)
Characteristics Symbol Rating Unit
Peak supply voltage (0.2 s) VCC (surge) 50 V
DC supply voltage VCC (DC) 25 V
Operation supply voltage VCC (opr) 18 V
Output current (peak) IO (peak) 9 A
Power dissipation PD(Note5) 125 W
Operation temperature Topr −40~85 °C
Storage temperature Tstg −55~150 °C
Note5: Package thermal resistance θj-T =1°C/W (typ.)
(Ta =25°C, with infinite heat sink)
The absolute maximum ratings of a semiconductor device are a set of specified parameter values, which must not
be exceeded during operation, even for an instant. If any of these rating would be exceeded during operation, the
device electrical characteristics may be irreparably altered and the reliability and lifetime of the device can no
longer be guaranteed. Moreover, these operations with exceeded ratings may cause break down, damage and/or
degradation to any other equipment. Applications using the device should be designed such that each absolute
maximum rating will never be exceeded in any operating conditions. Before using, creating and/or producing
designs, refer to and comply with the precautions and conditions set forth in this documents.
Electrical Characteristics
(unless otherwise specified VCC =13.2 V, f =1 kHz, RL=4 Ω, Ta =25°C)
Characteristics Symbol
Test
Circuit Test Condition Min Typ. Max Unit
Quiescent current ICCQ ⎯V
IN =0 ⎯200 400 mA
POUT MAX (1) ⎯V
CC =14.4 V, max Power ⎯35 ⎯
POUT MAX (2) ⎯V
CC =13.7 V, max Power ⎯31 ⎯
POUT (1) ⎯V
CC =14.4 V, THD =10% ⎯23 ⎯
Output power
POUT (2) ⎯THD =10% 17 20 ⎯
W
Total harmonic distortion THD ⎯P
OUT =5 W ⎯0.02 0.2 %
Voltage gain GV⎯V
OUT =0.775 Vrms (0dBm) 32 34 36
Voltage gain ratio ∆GV⎯V
OUT =0.775 Vrms (0dBm) −1.0 0 1.0 dB
VNO (1) ⎯Rg =0 Ω, DIN45405 ⎯0.20 ⎯
Output noise voltage VNO (2) ⎯Rg =0 Ω, BW =20 Hz~20 kHz ⎯0.18 0.42
mVrms
Ripple rejection ratio R.R. ⎯frip =100 Hz, Rg =620 Ω
Vrip =0.775 Vrms (0dBm) 40 50 ⎯dB
Cross talk C.T. ⎯Rg =620 Ω
VOUT =0.775 Vrms (0dBm) ⎯60 ⎯dB
Output offset voltage VOFFSET ⎯⎯−150 0 +150 mV
Input resistance RIN ⎯⎯⎯30 ⎯kΩ
Stand-by current ISB ⎯Stand-by condition ⎯2 10 µA
VSB H ⎯Power: ON 3.0 ⎯V
CC
Stand-by control voltage VSB L ⎯Power: OFF 0 ⎯1.5 V
VMH ⎯Mute: OFF Open ⎯
Mute control voltage (Note6) VML ⎯Mute: ON, R1=10 kΩ0 ⎯0.5 V
Mute attenuation ATT M ⎯Mute: ON, VOUT =7.75 Vrms (20dBm) at
Mute: OFF. 80 90 ⎯dB
Note6: Muting function have to be controlled by open and low logic, which logic is a transistor, FET and µ-COM port
of IMUTE >250 µA ability.This means than the mute control terminal : pin 22 must not be pulled-up.

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Test Circuit
RL
RL
RL
11
9
8
7
5
2
3
17
18
19
21
24
23
12
15
14
120 6
RL
IN1
IN2
IN3
IN4
13
C1
C1
C1
C1
PRE-GND
10 25422
OUT1 (+)
PW-GND1
OUT1 (−)
OUT2 (+)
PW-GND2
OUT2 (−)
OUT3 (+)
PW-GND3
OUT3 (−)
OUT4 (+)
PW-GND4
OUT4 (−)
TAB VCC1 VCC2
C3
R1
C4
1 µF
C2
: PRE-GND
: PW-GND
STBY
DIAGNOSIS
OUTRIP MUTE
3900 µF
0.22 µF
0.22 µF
0.22 µF
10 µF
10 kΩ
C5
0.1 µF
0.22 µF
AUX IN
16
0.22 µF
C6

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Quiescent current ICCQ (mA)
Output power POUT (W)
T.H.D – POUT
Total harmonic distortion T.H.D (%)
Power supply voltage VCC (V)
I
CCQ – VCC
Output power POUT (W)
T.H.D – POUT
Total harmonic distortion T.H.D (%)
100 30
0
400
20
100
200
300
RL=∞
VIN =0
0.1 100
0.01 1
0.1
1
10
10
100
10 kHz
1 kHz
100 Hz
VCC =13.2 V
RL=4 Ω
0.1 100
0.01 1
0.1
1
10
10
100
13.2 V
16.0 V
9.0 V
f =1 kHz
RL=4 Ω
Frequency f (Hz)
T.H.D – f
Total harmonic distortion T.H.D (%)
10010 100 k
0.001
1
1 k
0.01
0.1
10 k
OUT2, 3
VCC =13.2 V
RL=4 Ω
Pout =5 W
OUT3
OUT4

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Cross talk C.T. (dB)
Cross talk C.T. (dB)
Singnal source resistance Rg(Ω)
V
NO – Rg
Output noise voltage VNO (µVrms)
Frequency f (Hz)
R.R. – f
Ripple rejection ratio R.R. (dB)
Frequency f (Hz)
C.T. – f (OUT1)
Cross talk C.T. (dB)
Frequency f (Hz)
C.T. – f (OUT2)
Frequency f (Hz)
C.T. – f (OUT3)
Frequency f (Hz)
C.T. – f (OUT4)
Cross talk C.T. (dB)
10010 100 k
−70
0
1 k
−60
−30
10 k
−40
−20
−50
−10
VCC =13.2 V
RL=4 Ω
Rg=620 Ω
Vrip =0dBm
10010 100 k
−70
0
1 k
−60
−30
10 k
−40
−20
−50
−10
VCC =13.2 V
RL=4 Ω
VOUT =0dBm
Rg=620 Ω
OUT1 →OUT2, 3, 4
10010 100 k
−70
0
1 k
−60
−30
10 k
−40
−20
−50
−10
OUT2 →OUT1, 3, 4
VCC =13.2 V
RL=4 Ω
VOUT =0dBm
Rg=620 Ω
10010 100 k
−70
0
1 k
−60
−30
10 k
−40
−20
−50
−10
OUT3 →OUT4
OUT3 →OUT1, 2
VCC =13.2 V
RL=4 Ω
VOUT =0dBm
Rg=620 Ω
10010 100 k 1 k 10 k
−70
0
−60
−30
−40
−20
−50
−10
OUT4 →OUT1, 2, 3
VCC =13.2 V
RL=4 Ω
VOUT =0dBm
Rg=620 Ω
10010 100 k
0
300
1 k
50
200
10 k
100
150
250
VCC =13.2 V
RL=4 Ω
BW =20 Hz~20 kHz

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Frequency f (Hz)
G
V– f
Voltage gain GV(dB)
Output power POUT/ch (C)
P
D– POUT
Power dissipation PD(W)
Ambient temperature Ta (°C)
PDMAX –Ta
Allowable power dissipation PDMAX (W)
①
②
③
250 150
0
120
75
60
100
40
20
80
100
50 125
① INFINITE HEAT SINK
RθJC =1°C/W
② HEAT SINK (RθHS =3.5°C/W)
RθJC +RθHS =4.5°C/W
③ NO HEAT SINK
RθJA=39°C/W
10010 100 k
0
40
1 k
5
20
10 k
15
25
10
30
35
VCC =13.2 V
RL=4 Ω
VOUT =0dBm 0
10
40
30
50
20
60
70
5 15 2010 250
9 V
13.2 V
16 V
f =1 kHz
RL=4 Ω

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Package Dimensions
Weight: 7.7 g (typ.)

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•Use an appropriate power supply fuse to ensure that a large current does not continuously flow in case of over
current and/or IC failure. The IC will fully break down when used under conditions that exceed its absolute
maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the wiring or
load, causing a large current to continuously flow and the breakdown can lead smoke or ignition. To minimize the
effects of the flow of a large current in case of breakdown, appropriate settings, such as fuse capacity, fusing time
and insertion circuit location, are required.
•If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the design to
prevent device malfunction or breakdown caused by the current resulting from the inrush current at power ON or
the negative current resulting from the back electromotive force at power OFF. For details on how to connect a
protection circuit such as a current limiting resistor or back electromotive force adsorption diode, refer to individual
IC datasheets or the IC databook. IC breakdown may cause injury, smoke or ignition.
•Use a stable power supply with ICs with built-in protection functions. If the power supply is unstable, the protection
function may not operate, causing IC breakdown. IC breakdown may cause injury, smoke or ignition.
•Carefully select external components (such as inputs and negative feedback capacitors) and load components
(such as speakers), for example, power amp and regulator. If there is a large amount of leakage current such as
input or negative feedback condenser, the IC output DC voltage will increase. If this output voltage is connected to
a speaker with low input withstand voltage, overcurrent or IC failure can cause smoke or ignition. (The over
current can cause smoke or ignition from the IC itself.) In particular, please pay attention when using a Bridge Tied
Load (BTL) connection type IC that inputs output DC voltage to a speaker directly.
•Over current Protection Circuit
Over current protection circuits (referred to as current limiter circuits) do not necessarily protect ICs under all
circumstances. If the Over current protection circuits operate against the over current, clear the over current status
immediately. Depending on the method of use and usage conditions, such as exceeding absolute maximum
ratings can cause the over current protection circuit to not operate properly or IC breakdown before operation. In
addition, depending on the method of use and usage conditions, if over current continues to flow for a long time
after operation, the IC may generate heat resulting in breakdown.
•Thermal Shutdown Circuit
Thermal shutdown circuits do not necessarily protect ICs under all circumstances. If the Thermal shutdown circuits
operate against the over temperature, clear the heat generation status immediately. Depending on the method of
use and usage conditions, such as exceeding absolute maximum ratings can cause the thermal shutdown circuit
to not operate properly or IC breakdown before operation.
•Heat Radiation Design
When using an IC with large current flow such as power amp, regulator or driver, please design the device so that
heat is appropriately radiated, not to exceed the specified junction temperature (Tj) at any time and condition.
These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in
IC life, deterioration of IC characteristics or IC breakdown. In addition, please design the device taking into
considerate the effect of IC heat radiation with peripheral components.
•Installation to Heat Sink
Please install the power IC to the heat sink not to apply excessive mechanical stress to the IC. Excessive
mechanical stress can lead to package cracks, resulting in a reduction in reliability or breakdown of internal IC
chip. In addition, depending on the IC, the use of silicon rubber may be prohibited. Check whether the use of
silicon rubber is prohibited for the IC you intend to use, or not. For details of power IC heat radiation design and
heat sink installation, refer to individual technical datasheets or IC databooks.

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RESTRICTIONS ON PRODUCT USE 060116EBF
•The information contained herein is subject to change without notice. 021023_D
•TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc. 021023_A
•The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk. 021023_B
•The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations. 060106_Q
•The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others. 021023_C
•The products described in this document are subject to the foreign exchange and foreign trade laws. 021023_E
•This product generates heat during normal operation. However, substandard performance or malfunction may
cause the product and its peripherals to reach abnormally high temperatures.
The product is often the final stage (the external output stage) of a circuit. Substandard performance or
malfunction of the destination device to which the circuit supplies output may cause damage to the circuit or to the
product. 030619_R
About solderability, following conditions were confirmed
•Solderability
(1) Use of Sn-37Pb solder Bath
· solder bath temperature =230°C
· dipping time =5 seconds
· the number of times =once
· use of R-type flux
(2) Use of Sn-3.0Ag-0.5Cu solder Bath
· solder bath temperature =245°C
· dipping time =5 seconds
· the number of times =once
· use of R-type flux