MeiVac MAK Series Installation guide

Issued September 11, 2008
OWNER’S OPERATION
AND
MAINTENANCE MANUAL
OF THE
MAK SPUTTERING SOURCES
5830 Hellyer Avenue
San Jose, CA 95138
PH: [phone] FX: [phone]
E-MAIL: [email protected]
YOUR S/N _____________________________
WARNING
AS WITH ALL ELECTRICAL DEVICES, THERE IS A SHOCK HAZARD
ASSOCIATED WITH THIS DEVICE. ALL INSTRUCTIONS SHOULD BE
FOLLOWED PERTAINING TO THE USE OF SUITABLE INTERLOCKS ON ALL
POWER SUPPLIES TO BE USED TO POWER THIS PRODUCT.
TM

Precautions to assure the proper operation of your MAK Source
CAUTION
• Water MUST be flowing thru the MAK while sputtering. Please see O&M manual for flow
requirements.
If MAK has been operated without water --- DO NOT turn the water on --- allow
the MAK to cool down before turnin
g
water on.
• Target paste [supplied with MAK] MUST be used. This provides a thermal layer between
the target and cathode [Copper block]. It is required to protect against uneven or irregular
surfaces of the target and / or cathode.
CAUTION
Failure to use target paste can damage the MAK. A VERY SMALL AMOUNT
MUST BE APPLIED -- A GLOVED FINGER USED TO SPREAD EVENLY OVER
THE CATHODE BLOCK. The block should be clearly visible --- thru a thin gray
film.
NOTE: A substitute paste such as thin [0.005”] Indium foil can also be used.
• Ceramic or Oxide targets --- MUST --- be bonded to a copper backing plate that con-
tains a keeper.
•A keeper MUST be used for all targets --- including magnetic. The keeper is used for
centering the target and maintaining a continuous magnetic path.
• MAK Sputter Sources should be CLEANED on a routine basis. This is easily accom-
plished during target change.
1. With target removed, clean entire cathode assembly --- removing any foreign material
present. Cleaning of both inside and outside of the block is suggested.
2. Clean the anode shield.
Issued September 11, 2008 2

Table of Contents
Introducing US, a Division of MeiVac, Inc............................................................................................ 4
MeiVac, Inc. QUALITY ASSURANCE .................................................................................................... 4
Introducing MAK Sputter Sources........................................................................................................ 4
Magnetron Sputtering?.......................................................................................................................... 5
RF Sputtering..........................................................................................................................................7
Operation of the MAK ............................................................................................................................ 8
VACUUM SYSTEMS……………………………………………………………………………………………………………9
Installation of Sources.........................................................................................................................10
Power Hook-up..................................................................................................................................... 12
DC CONNECTION………………………………………………………………………………………………………….. 12
RF CONNECTION……………………………………………………………………………………………………………12
Target Parameters................................................................................................................................ 14
PURITY………………………………………………………………………………………………………………………14
SURFACE…………………………………………………………………………………………………………………….14
TARGET DIMENSIONS……………………………………………………………………………………………………….14
TARGET SUPPLIERS…………………………………………………………………………………………………………14
MACHINABLE MATERIALS……………………………………………………………………………………………………15
NON-MACHINABLE MATERIALS……………………………………………………………………………………………...16
Target Mounting……………………………………………………………………………………………….. 16
Rate vs. Power…………………………………………………………………………………………………..18
Relative Sputtering Rates of 50 Materials………………………………………………………………….18
Relative Rates of Sputtering Sources vs. Distance………………………………………………………19
Returns & Warranty.............................................................................................................................. 20
APPENDIX A: MAK TECHNICAL SPECIFICATIONS .......................................................................... 21
APPENDIX B: TARGET SUPPLIERS...................................................................................................23
TARGET DIMENSIONS 1.3" 2.0" 3.0" 4.0" 6.0"
SPARE PARTS 1.3" 2.0" 3.0" 4.0" 6.0"
TUTORIALS {Benefits} {Simplicity} {TargetMounting}
Issued September 11, 2008 3

INTRODUCING US, a Division of MeiVac, Inc.
US has been an innovative manufacturer of sputtering since 1977. Exclusive licenses were ob-
tained from Stanford University and Lawrence Livermore Laboratory to build and distribute their
patented magnetron sputtering sources on a worldwide basis.
MeiVac, Inc. QUALITY ASSURANCE
All MeiVac products are manufactured under the most stringent conditions. This includes proper
selection & inspection of original materials, assembly in clean environments, and complete testing
for leaks & functionality. These quality products are packaged in durable containers for shipment
throughout the world.
INTRODUCING MAK SPUTTER SOURCES
The MAK sputter sources were designed, developed & tested under controlled laboratory condi-
tions at a major United States government laboratory. This low cost planar magnetron sputtering
source is compact, easy to install and requires no target bonding. All of the MAK sputter sources
(1.3, 2, 3, 4, and 6 inch) provide shielded electrical paths which allow RF as well as DC power to
the cathode with minimum line losses and low reflection of RF power.
The MAK sputter source has a unique feature of allowing low operational pressures (0.5 millitorr)
as well as high operational pressures (600 millitorr) without losing the focused plasma to the target.
The MAK sputter source is available in non-UHV and UHV designs.
Issued September 11, 2008 4

MAGNETRON SPUTTERING
Observations of the phenomenon we now call sputtering, go back over one hundred years to early
experiments which introduced electricity into a reduced pressure atmosphere. L. Holland de-
scribes these beginnings in his book Vacuum Deposition of Thin Films.
“When an electrical discharge is passed between electrodes at a low gas pressure, the cathode
electrode is slowly disintegrated under the bombardment of the ionized gas molecules. This phe-
nomenon is termed cathodic sputtering. The disintegrated material leaves the electrode surface
either as free atoms or in chemical combination with the residual gas molecules. Some of the lib-
erated atoms are condensed on surfaces surrounding the cathode while the remainder are re-
turned to the cathode by collision with gas molecules.”
The ensuing process might be compared to a fine sand blasting in which the momentum of the
bombarding particles is more important than their charge. The inert gas argon was chosen, to act
as the sputtering medium, because it is a heavy rare gas and is plentiful. It also has a low ioniza-
tion potential. The inert nature of argon inhibits compounds from being formed at the target sur-
face.
Once sputtered, the target atoms travel until they reach a nearby surface most notably, the sub-
strate. The deposited layer forms or grows on the substrate structure, influenced by such things as
material, temperature and gas structure.
When the ions strike the target, their primary electrical charge is neutralized (gain back the lost
electron) and they return to the process as atoms. Thus, direct current sources generally prevail
as the electrical energy source.
Issued September 11, 2008 5

In order to increase sputtering rate, magnetic coils were sometimes placed around the chamber to
pinch the plasma during the deposition. The pressure was reduced to 20 microns (2 X 10-2 torr)
and the rates increased. The electrodes were close together and the R.F. voltage was high.
These conditions caused damage to semiconductor devices due to the high electron and secon-
dary ion bombardment, which took place.
When it was realized how important the role of a magnetic field was in concentrating the plasma
and the effects that it had on rate, sputtering became more attractive as a commercial process.
Several magnetic configurations were used such as the post cathode, magnetically enhanced hol-
low cathodes and magnetrons. In order to make a magnetron work, it is necessary to cause the E
X B drift currents to close on themselves. This realization led to the magnetron cathode designs
that are in use today.
MAK BENEFITS
BENEFIT
S
O
F THE MAK
SIMPLICITY IN SPUTTERING
Magnetics
Center Magnet
A
djustable Anode Set
Screws
Ring MagnetCathode
Balanced / Unbalanced
• Magnet array is
INTERCHANGEABLE from bal-
anced or unbalanced. Disas-
sembly of source NOT
REQUIRED!
No Magnetic Housing
• Provides higher magnetic den-
sity at target surface
• Sputters at lower voltage for
comparable power levels
• Standard MAK sputters mag-
netic material
Issued September 11, 2008 6

RF SPUTTERING
If the target is an insulator, the neutralization process results in a positive charge on the target sur-
face. This charge may grow to the point that the bombarding ions (±) are repelled and the sputter-
ing process will stop. In order to make the process continue the polarity of the target must be re-
versed to attract enough electrons from the discharge to eliminate the surface charge. In order to
attract the electrons and not repeal the ions, the frequency must be high enough to reverse before
the direction of the ions are affected. The usual industrial frequency assigned by the FCC for such
is in the MHz range. Since this is a “radio” frequency, the process is called radio frequency sput-
tering, or RF sputtering. Most of the early sputtering was done using direct current sources. This
meant high voltage, with current draw being limited by the gas pressure. Typical voltages were 3-5
kV with a current from 50-250 ma at pressures of 50-250 microns. R.F. power was introduced be-
cause it makes it possible to sputter insulators.
BENEFITS OF THE MAK
SIMPLICITY IN SPUTTERING
Physical Parameters
PICTURE SHOWN IS NOT
TO SCALE
Anode
• Height adjustable to target
thickness - Selectively position-
ing anode to same plane as tar-
get --- obviously minimizing ma-
terial build-up
No Mechanical Target Clamp
• Target surface is not in contact
with dissimilar clamping material
--- minimizing stress during sput-
tering and cool down
• Standard HN power connector
permits RF/DC operation
HN CONNECTOR
Small Profile
• Mounts on CF, ISO or installs thru a
Quick Disconnect
• As example, standard 3” MAK fits thru
opening of 6” CF
One Vacuum Seal
• Elastomer (HV) or Metal (UHV) field
interchangeable
•
No water to Vacuum Seal
VACUUM SEAL
WATER LINES
• Teflon water lines with quick disconnects
Issued September 11, 2008 7

OPERATION OF THE MAK
VACUUM SYSTEMS
To successfully operate the MAK Series, a leak-tight vacuum system must be available. This sys-
tem should be pumped with a high vacuum pump of the turbo, or a cryo type. It may be necessary
to have a throttle valve, or orifice in the system to control pump throughput while the sputtering gas
is introduced. If a cryopump is used, the throttle valve may not be required, however, it is desirable
if sputtering gas pressures of more than five microns are to be used.
The vacuum system should be equipped with suitable gauging to measure and monitor pressures
in the 0.5-600 micron range during sputtering, and the 1x10-5 to 1x10-9 torr range during pre-sputter
pump down. The system must also be equipped with a fine metering valve and separate in-series
shut-off valve used for the introduction of the sputtering gas.
A suitable fixture for mounting and holding the substrate(s) during film deposition should be pro-
vided, in conjunction with a means of shuttering the source (target) from the substrate during pre-
cleaning of the target.
Since the MAK Series will not operate properly if the shutter is positioned too close to the
target, it is suggested that the total distance from target to shutter be at least 1”.
Issued September 11, 2008 8

To obtain ideal uniformity, the distance from source to substrate should be adjustable.
Note: The rate will decrease by the square of the distance from source to sub-
strate, however uniformity will be enhanced as this distance is increased.
The chamber may be made of glass or metal. If the chamber is metal, a viewing port should be
provided for observation during sputtering.
Issued September 11, 2008 9

INSTALLATION OF SOURCES
STANDARD MOUNTING
To mount the source a QUICK COUPLE feedthrough adapter is required. A 0.75” adapter is used
for the 1.3”, 2”, and 3”, and 4” sources. The 6” MAK requires a 1.25” quick coupler adapter.
Water Lines Power Connector
(HN)
HN Power Pin
End Adapter
Vacuum
Vessel
Atmosphere
Tube Clamp
Quick Coupler
MAK Installed in Vacuum
Chamber
A. PREPARING THE SOURCE FOR MOUNTING VIA A QUICK COUPLER
1. Loosen the screws on the End Adapter holding the electrical connector on the end of the tube.
2. Pull straight out on the electrical connector mounting assembly. The whole assembly will come
off, leaving the water tubes free and the electrical connector assembly unplugged from the
power feed rod.
3. Remove the tube clamp from the tube. This clamp is designed to keep the source in position
when the system is under vacuum.
4. From the inside of the vacuum system, insert the water tubes into the feedthrough hole, and
then insert the tube. Position the tube to the approximate desired source to substrate distance.
5. Slide on the “O” ring, compression ring and coupler nut. Hand tighten the nut.
6. Slide on the clamp tube, position and tighten.
Issued September 11, 2008 10

7. Slide the End Adapter on the tube, making sure that the slip pin in the connector body is in-
serted in the socket of the power feed rod. Push on as far as it will go and tighten the screws.
8. The system may now be pumped down.
9. Hook up the water lines. Connect the house supply and drain lines to the source tubes. See
technical specifications for minimum flow requirements.
10.Connect the power cable.
B. DIRECT FLANGE MOUNTING VIA CF, ISO, ANSI, JIS and other flanges
1. MAK Source has been attached to the mounting flange. To adjust source to substrate distance
--- either the substrate must be moved or a feedthrough nipple must be placed between the
mounting flange and the vacuum system.
2. Attach the MAK mounting flange to the system.
3. Refer to step (7) above.
3” MAK Welded onto
Conflat Flange
PN: L300A01-CF
Issued September 11, 2008 11

POWER HOOK-UP
All MAK sputter sources may be operated in either the DC or RF mode. All models are supplied
with an HN (Amphenol UG-496/U) for convenient electrical connection to your choice of power
source. The following US Sputtering Power Supplies come complete with output cables having the
HN mating connector.
P/N SU-500 DC 500 Watt DC Power Supply
P/N SU-1500 DC
1500 Watt DC Power Supply
P/N SU-5000 DC
5000 Watt DC Power Supply
P/N: SU-R301 300 Watt RF Generator and Automatic Tuning Network
P/N: SU-R601 600 Watt RF Generator and Automatic Tuning Network
P/N: SU-R1001 1000 Watt RF Generator and Automatic Tuning Network
DC Connection
The power supply is provided with twelve feet of RG 8/U high voltage cable. Connect the PL 259
connector to the power supply and the HN connector to the sputter source.
RF Connection
The RF Generator / Automatic Tuning Network is provided with all necessary cables for hook-up.
 12’ co-axial cable for connection of the power supply to tuning network
 3’ co-axial cable for connection of tuning network to sputter source (HN Connector)
 24’ interface cable between network controller and tuning network
 Four-foot control cable between control panel and RF supply
End Adapter
HN Connector
(Male)
HN Connector
(Female)
Water lines Cable to RF or DC
Power Supply
Issued September 11, 2008 12

Input Power Connection
12’ RG-8U Cable
with N Type Connections
RF Generator
D Connector to D
Connector
50 Pin Connectors
with metal covers
Power Connection
A
uto Tuning Network
3’ or 5’ RG 393/U Cable
with HN Connector
OUTPUT TO SPUTTERING
CAUTIONS IN RF HOOK-UP
Cable length between should be a derivative of the 13.56 MHz. Wave length. Approximately 48,
24, or 12 feet and be 50 ohm RF shielded cable.
Cable length between the tuning network and sputter source should be minimized (3’ or 5’ is rec-
ommended for use with US generators).
Do not use external grounds at electrical connections; see power supply manual for addi-
tional details.
Issued September 11, 2008 13

TARGET PARAMETERS
Purity
Target material for the MAK sputtering source is not confined to a minimum or maximum purity
level. This parameter is dependent upon film requirements.
Surface
The mounting (bottom side) surface of the target should be smooth and flat to allow good contact
to source. The top and bottom of the target should be parallel for best deposition uniformity.
Target Dimensions
See the Target Specifications at www.us-incorp.com.
[1.3” MAK] [2.0” MAK] [3.0” MAK] [4.0” MAK] [6.0” MAK]
Target Suppliers – For a list of qualified target suppliers, see Appendix B.
Sim
p
licit
y
in S
p
utte
r
in
g
INTRODUCING
The MAK
Planar Magnetron Sputtering Source
TARGET KEEPER
Target Installation on the MAK
The MAK sputtering sources
have the unique feature of
attaching the target using
magnetic force. This is
accomplished by attaching a
magnetically permeable
“keeper” (see appendix) to the
Cathode Target
bottom of the target. This
keeper coupling with the mag-
netic field of the MAK source
provides sufficient force to
clamp and center the target,
eliminating the need for com-
plex mechanical clamps.
Keeper
Magnets
Issued September 11, 2008 14

Machinable Materials
The target keeper can be attached to machinable materials by drilling and tapping the target to
90% of it’s thickness and attaching the keeper using a vented flat head screw.
TARGET MOUNTING OF THE MAK
MACHINABLE MATERIALS
By attaching a magnetic keeper to the target, the MAK source uses the magnetics of the gun to hold
the target in place.
If you have old targets, NO PROBLEM! Drill and tap your existing targets as shown and attach the
metallic keeper.
Then, snap the target into place. It’s that simple!
Target Material
Target Material with
Drilled and Tapped Hole
Target Material
with Keeper Mounting Screw
Keeper
15

Non-Machinable Materials
Ceramic and oxide materials, a copper backing plate containing a magnetic keeper should be
used. The target must be bonded to this backing plate and this bond must be able to withstand a
temperature of 220oC.
TARGET MOUNTING OF THE MAK
NON-MACHINABLE MATERIALS
Cu plate with
drilled and tapped
hole
Backing Plates
Ceramics, oxides, and any other non- ma-
chinable targets are commonly bonded to a
copper backing plate for all sputtering
sources.
MAK Backing Plates
The MAK sputter source uses the same
backing plate, but with a magnetic keepe
r
attached. The keeper holds the target in
place without a mechanical clamp.
Keeper with
screw
Bonded Target - Example
This is an example of a SiO2 target
bonded to a copper backing plate with a
magnetic keeper attached.
target keeper
bond
copper backing
plate
16

Copper Backing Plate Specifications (See Appendix A)
MAK 1.3” Copper Backing Plate Part Number: MAK-130-BP
MAK 2” Copper Backing Plate Part Number: MAK-200-BP
MAK 3” Copper Backing Plate Part Number: MAK-300-BP
MAK 4” Copper Backing Plate Part Number: MAK-400-BP
MAK 6” Copper Backing Plate Part Number: MAK-600-BP
Caution
Failure to use thermal contact paste or a thin metal foil as an interface layer between the
target and the copper cooling block can cause over heating and may damage the MAK
source and/or target.
Remove the Anode
Simplicity in Sputtering
MAK with target installed
Anode retracted
Target
mounted with
magnetic
keeper
1. Spread a small amount of thermal contact paste on the top of the copper chill
block. The paste should be spread evenly and so thin you can see through it.
a) If the thermal contact paste is not used a thermally and electrically conductive foil e.g.
indium ~0.005” thick with a donut shape slightly smaller than the cathode/chill block
must be placed between the block and the target.
b) Place the target at the center of the source assuring that the magnetic keeper has
been properly positioned in the recessed center magnet cavity. Twist slightly to
evenly distribute the thermal contact paste.
c) Replace Anode
NOTE: A target keeper is not required with magnetic materials; however, the user should take
care to insure even spacing between the O.D. of the target and the I.D. of the ground shield.
Thermal Contact Paste
Part Number TP-832
17

RATE VS. POWER
COPPER 2" Dia., 3" Dist.
0.00
5.00
10.00
15.00
20.00
25.00
30.00
35.00
40.00
0 50 100 150 200 250 300 350 400 450 500
Watts RF
Å
/
s
e
c
When gathering rate data, it is also
desirable to take rates at different
power levels. These values can be
plotted to produce a graph similar to
the one shown.
Please Note: For approximating DC
rates, multiply by 1.75.
RELATIVE SPUTTERING RATES OF
50 MATERIALS
The following list of materials and
their relative sputtering rates are
normalized to copper as 1.00. Copper is a convenient and readily available material to use
as a reference. Once the rate of copper is known, then the other 49 may be approximated.
Please Note: These rates may vary from those of other periodicals, due to the conditions
under which the rates were taken.
Element (or compound) Cu = Rate of 1.00
Ag 2.06 Gd 1.17 Rh 0.74
Al 0.73 Ge 1.05 Ru 0.66
Al2O3 0.15 Glass 0.23 Sb 3.68
Au 1.76 Hf 0.67 Si 0.39
Be 0.22 Ir 0.61 SiC 0.36
Bi 10.00 Mg 0.26 SiO 0.27
C 0.05 MgF 0.03 SiO2 0.45
CdS (1010) 2.39 Mn 0.99 Sm 1.14
CdTe 0.64 Mo 0.53 Sn 1.38
Co 0.58 Nb 0.44 Ta 0.43
Cr 0.60 Ni 0.65 Th 0.84
Cu 1.00 Os 0.5 Ti 0.38
Dy 1.18 Pb 3.52 U 0.73
Er 1.00 Pd 1.31 V 0.38
Fe 0.56 Pt 0.9 W 0.39
GaSa (110) 1.70 Rb 4.55 Y 0.95
Re 0.53 Zr 0.65
18

RELATIVE RATES OF SPUTTERING SOURCES VS DISTANCE
Rate data, for sputtering with small sources, is usually taken by making step samples and
then measuring them with either profilometer or interferometer. A quartz crystal micro-
balance type rate monitor may also be used. If a rate monitor is used, the geometry and the
density of the deposit must be taken into account. Because of the uncertainties of rate
monitor data, the most prudent course is to correlate the values taken with the rate monitor
with those taken by step sample method.
If the distance from the substrate to the target is changed and the power remains constant, the
change in deposition rate is a function of the ratio of the distances squared. For example, if the
rate at a 3” target to substrate distance is 15 Å/sec., the power is constant and the distance
changes from 3” to 4”, the rate drops to 8.4 Å/sec.
Rate at 3” = 15 Å/sec.,
Ratio for a change from 3” to 4” = 32/42= 9/16 = 0.563
Ratio times Rate at 3” = 0.563 x 15 Å/sec = 8.4 Å/sec
Many factors affect deposition rate, but this is a reasonable approximation of the ef-
fect of distance.
19

Claims & Returns
Shipping and Handling Claims
Purchaser should inspect the product carefully as soon as it is received and test it in accordance with any
instructions that may be provided. If damage is noted, or the product fails to operate properly as the result
of shipping or handling damage, a claim should be filed with the common carrier and a copy forwarded to
MeiVac or its distributor. MeiVac or its distributor will not recognize any claim for equipment damaged as a
result of shipping or handling damage if the claim is submitted more than thirty days after MeiVac’s or its
distributor’s shipment of the product. Failing to report any damage within this period shall be considered an
acknowledgement by Purchaser that the product was received undamaged.
Warranty Claims
For a warranty claim to be valid, it must:
• be made within the applicable warranty period,
• include the product serial number and a full description of the circumstances giving rise to the claim, and
• have been assigned an RMA number (see Authorized Returns) by MeiVac or its distributors.
Purchaser’s exclusive remedy and MeiVac’s sole responsibility under the Warranty set forth herein is the
repair or replacement of the defective product, at MeiVac’s option. Purchaser shall reimburse MeiVac for
the repair of any returned product determined by MeiVac not to be defective or to have been damaged by
misuse, abuse or unauthorized repair. All warranty work will be performed at an authorized MeiVac service
center.
Purchaser is responsible for obtaining authorization (see Authorized Returns) to return any defective units,
prepaying the freight costs, and ensuring that the units are returned to the location identified by MeiVac on
the RMA. Provided the work required on the unit is covered under the Warranty, MeiVac will replace the af-
fected unit or repair it at no charge to Purchaser. On completion of said repair or replacement, the unit will
be returned (freight prepaid) to the Purchaser. Whoever ships the unit (either Purchaser or MeiVac) will be
responsible for properly packaging and adequately insuring it.
Authorized Returns
Before returning any product for any reason, Purchaser shall call MeiVac or its distributor and discuss the
reason for return. Be prepared to give the serial number of the unit. This consultation call shall be at no
charge to the Purchaser and will allow MeiVac or its distributor to determine if the unit must actually be re-
turned for a problem to be corrected. If it is determined that the unit needs to be returned a Return Material
Authorization (RMA) number will be issued. This RMA number must be referenced on all paperwork asso-
ciated with the return, and be prominently displayed on the outside of any packaging that the unit is being
returned in.
Units that are returned without MeiVac’s or its distributor’s authorization will be held by MeiVac or its dis-
tributor until such time as Purchaser can identify the reason for the return, after which, action deemed ap-
propriate by MeiVac or its distributor (including return of the unit to Purchaser freight collect) shall be taken.
Terms governing all products sold by US, a Division of MeiVac are the MeiVac Terms and Conditions of
Sale. These can be found on the MeiVac web site (www.meivac.com), the US web site (www.us-
incorp.com) or obtained from your local representative.
20