Southchip Sc8913 evm User manual

SC8913 EVM USER GUIDE

——Southchip Semiconductor

SC8913 EVM USER GUIDE

SOUTHCHIP SEMICONDUCTOR SOUTHCHIP CONFIDENTIAL

1Fundamental Information

SC8913 EVM board is used for SC8913 which is featured with high efficiency, bi-direction operation (buck

charger/boost discharger), and integrated MOSFET. User can configure parameters flexibly through I2C

interface on the SC8913 EVM board. Besides, the charging/discharging function and all chip performance can

be evaluated with EVM board.

SC8913 EVM board parameters are as follow:

Table 1. SC8913 EVM parameter

EVM board version

SC8913_EVM_C11.3

Support charging/discharging bi-direction operation

Yes

Integrated MOSFET

Yes

Support I2C interface

Yes

Support power path management

Yes

Smart detection function

Yes

ADC resolution

10 bits

VBUS operation range in charging mode

VBAT~25V (support up to maximum 26V)

VBAT operation range in charging mode

2.6V~20V (support up to maximum 26V)

VBAT operation range in discharging mode

2.6V~20V (support up to maximum 26V)

VBUS operation range in discharging mode

VBAT~25V (support up to maximum 26V)

Inductor peak current IL

15A

Maximum input/output average current(IBUS)

6A configured by I2C

Maximum input/output average current(IBAT)

24A configured by I2C

IBUS current sense resistor value

10mΩ

IBAT current sense resistor value

5mΩ

Switching frequency

150kHz/300kHz(default)/450kHz, configured by I2C

Discharging efficiency

(VBAT=3.6V, VBUS=5V, IBUS=2.4A)

95%

VBUS capacitor

25V/22uFx 3

VBAT capacitor

25V/22uFx 3

EVM board dimension

47.6mm x 57.8mm (4-layer board)

SC8913 EVM USER GUIDE

SOUTHCHIP SEMICONDUCTOR SOUTHCHIP CONFIDENTIAL

Table 2 shows input/output interface functions and configurations:

Table 2. EVM Interface function description

Designator

Name

Description

J1

VBUS

VBUS terminal, as input in charging mode, output in discharging mode

J2

GND

Power ground of USB port

J3

VBAT

VBAT terminal, connected to battery, as output in charging mode, input

in discharging mode

J4

GND

Power ground of battery port

J5

MicroUSB

Micro USB adapter input port, isolated with VBUS by Q1 MOSFET

J6

USB1

USB-A output port 1, isolated with VBUS by Q2 MOSFET

J7

USB2

USB-A output port 2, isolated with VBUS by Q4 MOSFET

P3

I2C/INT

P3 interface pins are SCL/SDA/V3P3/AGND/INT from left to right

respectively. SCL/SDA is I2C communication interface; V3P3 is 3.3V

pull-up power (provided by external power, if I2C tool is connected with

computer, the power will be provided by computer); AGND is analog

ground; INT is interrupt signal.

P4

ADIN

ADIN lies on the right pin of P4. ADIN is analog input port of 10 bits ADC,

and the full amplitude is 2.048V; if ADC is disabled, it’s suggested that

ADIN is connected with AGND (the left pin of P4).

P5

MicroB_drv

P5 interface’s middle pin is MicroB_drv, MicroB_drv is driver signal of Q1

MOSFET between MicroUSB port and VBUS port.

P6

PSTOP

The middle pin of P6 interface is PSTOP, PSTOP is chip power control

signal.

1. If PSTOP is floating or connected with AGND (right pin), power module

is enabled.

2. if PSTOP is connected to VHI (left pin), power module is disabled.

P7

AGND

Analog ground.

Table 3 shows test point.

Table 3. Test point description

Designator

Name

Description

TP1

SW

Switching node test point

1.1 I2C Configuration

SC8913 has an I2C control interface. The user can configure charging/discharging operation, switching

frequency, charging target voltage, input regulation voltage (VINREG) in charging mode, VBUS voltage in

SC8913 EVM USER GUIDE

SOUTHCHIP SEMICONDUCTOR SOUTHCHIP CONFIDENTIAL

discharging mode, IBUS limit current, IBAT limit current and so on. The User can also control power path and

read various protective states and intelligent detection states through I2C interface. In addition, chip’s

integrated ADC function also needs to be turned on through the I2C, and the data of the ADC conversion are

also stored in the registers.

The device address is 0x74 (7bits). The following is a brief introduction of setting voltage/current and read

voltage/current through I2C interface, and the specific register table can be referred to SC8913 datasheet.

1.1.1 SouthChip I2C GUI Tool Guidance

I2C GUI Tool is developed by SouthChip, convenient for customers to debug.

When VBUS is decided by external configuration, the Rup and Rdown values marked with red color on the

lower part of the interface should be filled according to the actual resistance on EVM. In this way, the voltage

value shown in blue marker 1 is the true VBUS voltage value.

In the same way, if user fills the current sense resistance values of IBUS (RS1) and IBAT (RS2) on the EVM in the

RS1 and RS2 marked with red color, then the I2C GUI will show the actual IBUS_LIM and IBAT_LIM set values, as

well as real-time value of IBUS and IBAT.

Figure 1 SC8913 I2C tool interface

1.1.2 Charging Target Voltage in Charging Mode

Firstly, set Reg 0x09<7> (OTG_EN) =0 to work in charging mode.

a) Charge target voltage VBAT is decided by internal setting

VBATS pin should be connected with VBAT network and set Reg 0x00<5> (VBAT_SEL) =0.

CSEL: Reg 0x00<4:3>, used to set battery cell numbers

VCELL_SET: Reg00<2:0>, used to set target cell voltage value

The default charge target voltage value for each cell is 4.2V. User can configure it from 4.1V to 4.5V

SC8913 EVM USER GUIDE

SOUTHCHIP SEMICONDUCTOR SOUTHCHIP CONFIDENTIAL

b) Charge target voltage is decided by external setting

VBATS should be connected with resistor divider of VBAT and set Reg 0x00<5> (VBAT_SEL) =1. The reference

voltage VBATS_REF is constant 1.2V.

VBAT = VBATS_REF×(1+ RUP

RDOWN)

VBAT

VBATS

+

VBAT

VBATS

+

A. VBAT_SEL = 0

B. VBAT_SEL = 1

Rup

Rdown

Figure 2 SC8913 charge target voltage setting circuit

What’s more, SC8913 integrates battery impendence compensation function, no matter internal or external

configuration. Reg 0x00<7:6>(IRCOMP) is used to set compensation voltage.

So the real target voltage can be calculated as follow:

VBAT_cmp = VBAT_set + min(IBAT∙IRCOMP, VCLAMP)

VCLAMP is the allowed maximum compensation value, fixed at 125mV.

Table 4. VBAT_SEL Reg table

Bit

Mode

Bit Name

Default value @POR

Description

7-6

R/W

IRCOMP

00

Battery IR compensation setting:

00: 0 mΩ (default)

01: 20 mΩ

10: 40 mΩ

11: 80 mΩ

5

R/W

VBAT_SEL

0

VBAT voltage setting selection:

0: internal setting (default)

1: external setting

4-3

R/W

CSEL

00

Battery cell selection, only valid for internal VBAT voltage setting

00: 1S battery (default)

01: 2S battery

10: 3S battery

11: 4S battery

SC8913 EVM USER GUIDE

SOUTHCHIP SEMICONDUCTOR SOUTHCHIP CONFIDENTIAL

2-0

R/W

VCELL_SET

001

Battery voltage setting per cell, only valid for internal VBAT voltage

setting

000: 4.1V

001: 4.2V (default)

010: 4.25V

011: 4.3V

100: 4.35V

101: 4.4V

110: 4.45V

111: 4.5V

1.1.3 VBUS Output Voltage Setting in Discharging Mode

Firstly, set Reg bit 0x09<7> (OTG_EN) =1 to operate in discharging mode.

a) VBUS is decided by internal setting

FB should be floating and set Reg 0x0A <4> (FB_SEL) =0.

VBUS output voltage is decided by VBUSREF_I_SET, VBUSREF_I_SET2, and VBUS_RATIO.

VBUSREF_I_SET: Reg 0x01<7:0>

VBUSREF_I_SET2: Reg 0x02<7:6>

VBUS_RATIO: Reg 0x08<0>

The internal reference voltage can be calculated as follow:

VBUSREF_I = (4 x VBUSREF_I_SET + VBUSREF_I_SET2 + 1) x 2 mV

The recommended VBUS voltage range is from 3.5V to 25.6V.

When VBUS is lower than 10.24V, it is suggested to set the VBUS_RATIO to 5x, and so the minimum

changing step is 10mV/step;

When VBUS is higher than 10.24V, VBUS_RATIO should be set to 12.5x, and the minimum changing step is

25mV/step.

VBUS voltage can be calculated as below:

VBUS = VBUSREF_I x VBUS_RATIO

b) VBUS is decided by external setting

Set Reg 0x0A <4> (FB_SEL) =1 and FB pin should be connected with resistor divider of VBUS.

The VBUS external reference voltage is decided by VBUSREF_E_SET and VBUSREF_E_SET2.

VBUSREF_E_SET: Reg 0x03<7:0>

VBUSREF_E_SET2: Reg 0x04<7:6>

The VBUS external reference voltage can be calculated as below. The adjustable reference voltage range is

0.7V~2.048V, the default value is 1V.

VBUSREF_E = (4 x VBUSREF_E_SET + VBUSREF_E_SET2 + 1) x 2 mV

SC8913 EVM USER GUIDE

SOUTHCHIP SEMICONDUCTOR SOUTHCHIP CONFIDENTIAL

VBUS voltage can be calculated as below:

VBUS = VBUSREF_E x (1+ RUP

RDOWN )

External setting is chosen as the default configuration on the EVM board. R27(RUP) value is 100kΩ,

R28(RDOWN) value is 24kΩ, so the default output voltage of VBUS is 5.17V.

Note: If more accurate voltage value is needed, 0.1% accuracy resistor is suggested.

1.1.4 IBUS Current Limit Setting

IBUS current limit function is effective in both charging and discharging mode.

IBAT current limit is decided by IBUS_LIM_SET and IBUS_RATIO.

IBUS_LIM_SET: Reg 0x05<7:0>

IBUS_RATIO: Reg 0x08<3:2>

When Reg 0x08<3:2> (IBAT_RATIO) =01, IBUS_RATIO=6;

When Reg 0x08<3:2> (IBUS_RATIO) =10, IBUS_RATIO=12;

RS1 is the IBUS sense resistor value.

IBUS_LIM (A) = (IBUS_LIM_SET +1)

256 × IBUS_RATIO × 10 mΩ

RS1

RS1 value is 10mΩ, the default IBUS current limit is 3A.

1.1.5 IBAT Current Limit setting

IBAT current limit function is effective in both charging and discharging mode.

IBAT current limit is decided by: IBAT_LIM_SET and IBAT_RATIO.

IBAT_LIM_SET: Reg 0x06<7:0>

IBAT_RATIO: Reg 0x08<4>

When Reg 0x08<4> (IBAT_RATIO) =0, IBUS_RATIO=6;

When Reg 0x08<4> (IBAT_RATIO) =1, IBUS_RATIO=12.

RS2 is the IBAT sense resistor.

IBAT_LIM (A) = IBAT_LIM_SET+1

256 × IBAT_RATIO × 10 mΩ

RS2

RS2 value is 5mΩ, the default IBUS current limit is 24A.

1.1.6 VINREG Setting

During charging, if the IBUS charging current is higher than adapter’s current capability, the adapter will be

overloaded and the VBUS voltage is pulled low. Once the IC detects the VBUS voltage drops at VINREG

threshold, it reduces the charging current automatically and regulates the VBUS voltage at VINREG threshold.

VINREG value is decided by: VINREG_SET and VINREG_RATIO.

VINREG_SET: Reg 0x07<7:0>

VINREG_RATIO: Reg 0x09<4>

SC8913 EVM USER GUIDE

SOUTHCHIP SEMICONDUCTOR SOUTHCHIP CONFIDENTIAL

When Reg 0x09<4>=0, VINREG_RATIO=100.

When Reg 0x09<4>=1, VINREG_RATIO=40 (Suit for VINREG<10V).

VINREG = （VINREG_SET+1） × VINREG_RATIO （mV）

1.1.7 ADC Setting

SC8913 provides 5-channel ADC sampling for VBUS/VBAT/IBUS/IBAT/ADIN. Set Reg 0x0C<5> (ADC_START) =1 to

enable ADC function.

a) VBUS value can be calculated by VBUS_FB_VALUE and VBUS_FB_VALUE2:

VBUS = (4 x VBUS_FB_VALUE + VBUS_FB_VALUE2 + 1) x VBUS_RATIO x 2 mV

VBUS_FB_VALUE: set by Reg 0x1D<7:0>

VBUS_FB_VALUE2: set by Reg 0x0E<7:6>

b) VBAT value can be calculated by VBAT_FB_VALUE and VBAT_FB_VALUE2:

VBAT = (4 x VBAT_FB_VALUE + VBAT_FB_VALUE2 + 1) x VBAT_MON_RATIO x 2 mV

VBAT_FB_VALUE: set by Reg0x0F<7:0>

VBAT_FB_VALUE2: set by Reg0x10<7:6>

When Reg 0x08<1> (VBAT_MON_RATIO) =0, VBAT_MON_RATIO=12.5(default);

When Reg 0x08<1> (VBAT_MON_RATIO) =1, VBAT_MON_RATIO=5. For 1~2 cell application, it’s suggested

to choose VBAT_MON_RATIO=5.

c) IBUS value can be calculated by IBUS_VALUE and IBUS_VALUE2:

IBUS (A) = (4 x IBUS_VALUE + IBUS_VALUE2 + 1)×2

1200 × IBUS_RATIO × 10 mΩ

RS1

IBUS_VALUE: set by Reg 0x11<7:0>

IBUS_VALUE2: set by Reg 0x12<7:6>

d) IBAT value can be calculated by IBAT_VALUE and IBAT_VALUE2:

IBAT (A) = (4 x IBAT_VALUE + IBAT_VALUE2 + 1)×2

1200 × IBAT_RATIO × 10 mΩ

RS2

IBAT_VALUE: set by Reg 0x13<7:0>

IBAT_VALUE2: set by Reg 0x14<7:6>

e) VADIN value can be calculated by ADIN_VALUE and ADIN_VALUE2:

VADIN = (4 x ADIN_VALUE + ADIN_VALUE2 + 1) x 2 mV

ADIN_VALUE: set by Reg 0x15<7:0>

ADIN_VALUE2: set by Reg 0x16<7:6>

Note: when the chip is set as standby mode (PSTOP = H), user shall set the Reg 0x0C<5> (ADC_START) to 0 to

disable ADC function, reducing the quiescent current.

SC8913 EVM USER GUIDE

SOUTHCHIP SEMICONDUCTOR SOUTHCHIP CONFIDENTIAL

1.2 Other Settings

1.2.1 Loop compensation setting

COMP pin is used for loop compensation setting. R25=10kΩ and C28=22nF is suggested for typical application.

Once loop instability occurs, R25 and C28 should be adjusted according to practical situation.

1.2.2 MOSFET driver resistor setting

R9/R10 is driver resistor which connects LD/HD with LG/HG respectively on the EVM board. The default value

of R9/R10 is 0 ohm. Increasing R9/R10 value will slow down switching speed and improve EMI performance,

but with the cost of decreased efficiency at the same time.

1.2.3 Power path management Q2/Q4 driver setting

Q2/Q4/Q1 is the power MOSFET used to control the power path. Q2’s driver signal is connected to GPO pin;

Q4’s driver signal is connected to PGATE pin; Q1’s driver signal is connected to MicroB_drv pin(P5);

Through I2C interface, Q4 and Q2 can be controlled by 0x0C<7> (EN_PGATE) and 0x0C<7> (GPO_CTRL)

respectively. When the corresponding setting bit is 1, Q4/Q2 will be on. Otherwise, Q4/Q2 will be off.

Specification description can be referred to SC8913 datasheet.

1.2.4 Adapter Attachment/Detachment Detection

MicroUSB adapter attachment/detachment detection is realized by ACIN pin. When chip detects adapter

plug-in, it will set AC_OK interrupt bit, and INT pin will assert interrupt signal. Specification description can be

referred to SC8913 datasheet

1.2.5 Dithering function test configuration

If switching frequency dithering function is tested, R17 should be removed and USB2 should disconnected. R15

value is set to 0 ohm, PGATE/DITH pin will be used for frequency dithering.

2. Test Precautions

1) When MicroUSB is used as input port, MicroB_drv pin should be connected with VHI (right pin) to open

MOS Q1.

2) If power path function is not tested, USB interface can be always connected to VBUS port，battery can be

connected to VBAT port. Chip operation mode can be changed by EN_OTG bit.

3) In the charging mode, USB charges the battery from VBUS to VBAT; in the reverse discharging mode,

battery discharges power from VBAT to VBUS.

4) PSTOP pin should be floating or connected to ground to enable the power operation.

5) SC8913 does not support starting up with CC mode electronic load. It’s suggested to start up with no load

or CR mode electronic load. Load can’t be so heavy that exceeds the current limit of SC8913, or it can not

start up normally.

6) After starting up, if the electronic load CC mode is used as the load, it should be noted that the CC load

current should not exceed the output current limit, and the corresponding input current should not

exceed the input current value. Otherwise, the CC load will pull the output voltage down directly. If CR

mode loading is used, even if the input / output current limit occurs, the output voltage still can be

stabilized at a balance point and will not be forced down.

SC8913 EVM USER GUIDE

SOUTHCHIP SEMICONDUCTOR SOUTHCHIP CONFIDENTIAL

3. EVM Schematic and BOM List

Figure 3 SC8913 EVM schematic

BOM list is as follow。

Table 5. SC8913 EVM BOM list

Reference

Description

Value

Part Number

Vendor

Quantity

C1, C2, C3, C10, C11,

C12

Capacitor, X5R, 1206, 25V,

10%, 22uF

22uF/25V

GRM31CR61E226KE15#

Murata

6

C4, C9, C17, C22, C25

Capacitor, X5R, 0603, 25V,

10%, 100nF

100nF/25V

GRM188R61E104KA01#

Murata

5

C5

Capacitor, X5R, 0402, 25V,

10%, 100nF

100nF/25V

GRM155R61E104KA87#

Murata

1

C6, C7

POSCAP （Solid electrolytic

capacitor ）, 6.3x11, 25V,

100uF

100uF/25V

std

2

C8

Capacitor, X5R, 1206, 25V,

10%, 10uF

10uF/25V

GRM319R61E106KA12#

Murata

1

C14

Capacitor, X5R, 0603, 25V,

10%, 2.2nF

NC

GRM188R61H222KA01#

Murata

1

C15, C28

Capacitor, X5R, 0603, 6.3V,

10%, 22nF

22nF/6.3V

GRM188R61H223KA01#

Murata

2

C16, C23

Capacitor, X5R, 0603, 10V,

10%, 100nF

100nF/10V

GRM188R61C104KA01#

Murata

2

C18, C24

Capacitor, X5R, 0603, 25V,

10%, 1uF

1uF/25V

GRM185R61E105KA12#

Murata

2

C19, C20, C26

Capacitor, X5R, 0603, 10V,

1uF/10V

GRM185R61A105KE26#

Murata

3

SC8913 EVM USER GUIDE

SOUTHCHIP SEMICONDUCTOR SOUTHCHIP CONFIDENTIAL

10%, 1uF

C21, C29

Capacitor, X5R, 0603, 6.3V,

10%, 100nF

100nF/6.3V

GRM188R61C104KA01#

Murata

2

D1

Dual diode

100V/0.2A

MMBD4148SE

Fairchild

1

J1, J2, J3, J4

Jack

JACK

std

4

J5

Micro USB

MICRO

std

1

J6, J7

USB-A-H

std

2

L1

Inductor, 2.2uH, 13x13x5

Inductor

CMLB135T-2R2MS

Cyntec

1

P3

Header, 5-Pin

Header 5

std

1

P4

Header, 2-Pin

Header 2

std

1

P5, P6, P7

Header, 3-Pin

Header 3

std

3

Q1, Q2, Q4

30V PMOS, SOT23, 55mohm,

4.3A

30V/4.3A

AO3401A/AO3401/VS3407

A /CJ3401A

A&O

3

Q3

NPN/NMOS, SOT23

2N7002/MMBT3904

NXP

1

R1

Metal resistor, 1206, 1W, 1%

10mR

std

1

R2

Metal resistor, 1206, 1W, 1%

5mR

std

1

R3, R11, R16, R27

Resistor, 0603, 1/4W, 1%

100k

std

4

R4, R14

Resistor, 0603, 1/4W, 1%

5R

std

2

R5, R13, R15, R19, R20

Resistor, 0603, 1/4W, 1%

NC

std

5

R6, R7

Resistor, 0603, 1/4W, 1%

2R

std

2

R8, R12, R17, R18,

R22, R23, R24, R25

Resistor, 0603, 1/4W, 1%

10k

std

8

R9, R10

Resistor, 0603, 1/4W, 1%

0R

std

2

R26

Resistor, 0603, 1/4W, 1%

1k

std

1

R28

Resistor, 0603, 1/4W, 1%

24k

std

1

TP1

test point

TP

std

1

U1

SC8913

Southchip

1

SC8913 EVM USER GUIDE

SOUTHCHIP SEMICONDUCTOR SOUTHCHIP CONFIDENTIAL

4. PCB Layout

SC8913 EVM board PCB layout is as follow:

Figure 4 Top Silkscreen

Figure 5 Top Layer

SC8913 EVM USER GUIDE

SOUTHCHIP SEMICONDUCTOR SOUTHCHIP CONFIDENTIAL

Figure 6 Mid Layer1

Figure 7 Mid Layer2

SC8913 EVM USER GUIDE

SOUTHCHIP SEMICONDUCTOR SOUTHCHIP CONFIDENTIAL

Figure 8 Bottom Layer

Figure 9 Bottom Silkscreen

SC8913 EVM USER GUIDE

SOUTHCHIP SEMICONDUCTOR SOUTHCHIP CONFIDENTIAL

5. Tested Data and Waveform

5.1 VBUS Output Voltage Ripple in Discharging Mode

fsw = 300kHz, L = 2.2uH, RS1 = 10mR, RS2 = 5mR, COMP = 10k + 22nF, VBAT=3.6V

VBUS = 5V, IBUS= 0A, PFM

VBUS = 5V, IBUS= 0A, PWM

VBUS = 5V, IBUS= 3A

VBUS = 9V, IBUS= 2A

VBUS = 12V, IBUS= 1.5A

VBUS = 12V, IBUS= 2A

SC8913 EVM USER GUIDE

SOUTHCHIP SEMICONDUCTOR SOUTHCHIP CONFIDENTIAL

5.2 VBUS Waveform in Load Transition in Discharging Mode

fsw = 300kHz, L = 2.2uH, RS1 = 10mR, RS2 = 5mR, COMP = 10k + 22nF, Loop bit=1, VBAT=3.6V

VBUS = 5V, IBUS=0A~3A, Slew-Rate=1A/uS

VBUS = 9V, IBUS=0A~2A, Slew-Rate=1A/uS

VBUS = 12V, IBUS=0A~1.5A, Slew-Rate=1A/uS

5.3 VBUS Voltage Dynamic Scaling in Discharging Mode

fsw = 300kHz, L = 2.2uH, RS1 = 10mR, RS2 = 5mR, COMP = 10k + 22nF, Loop bit=1, VBAT=3.6V

IBUS=0A, VBUS = 5~12V, Slew-Rate=2mV/uS

IBUS=0A, VBUS = 12~5V, Slew-Rate=2mV/uS

SC8913 EVM USER GUIDE

SOUTHCHIP SEMICONDUCTOR SOUTHCHIP CONFIDENTIAL

IBUS=0A, VBUS = 5~12V, Slew-Rate=8mV/uS

IBUS=0A, VBUS = 12~5V, Slew-Rate=8mV/uS

5.4 Current Limit Accuracy in Charging/Discharging mode

fsw = 300kHz, L = 2.2uH, RS1 = 10mR, RS2 = 5mR, COMP = 10k + 22nF, VBAT=3.6V

Charge/discharge mode, VBUS = 5~12V, Set

IBUS_LIM=2A

Charge/discharge mode, VBUS = 5~12V, Set

IBAT_LIM=3A

SC8913 EVM USER GUIDE

SOUTHCHIP SEMICONDUCTOR SOUTHCHIP CONFIDENTIAL

5.5 Discharging Efficiency

fsw = 300kHz, L = 2.2uH, RS1 = 10mR, RS2 = 5mR, COMP = 10k + 22nF, PFM mode

VBAT= 4.2V, VBUS=5V/9V/12V

VBAT= 3.6V, VBUS=5V/9V/12V

VBAT= 3.0V, VBUS=5V/9V/12V

5.6 Supply Current

fsw = 300kHz, L = 2.2uH, RS1 = 10mR, RS2 = 5mR, COMP = 10k + 22nF, VBAT=3.6V

Test Condition

Test Result

PSTOP=3.3V, VBUS floating, AD_START=0 Measure

current into VBAT

I_SB_VBAT=48.2uA

(Note: VBUS resistor divider consumes 30uA

because VBAT flows through body diode to VBUS)

PSTOP=3.3V, VBUS floating, Measure current into

VBAT, AD_START=1

I_SB_VBAT_ADC=495uA

SC8913 EVM USER GUIDE

SOUTHCHIP SEMICONDUCTOR SOUTHCHIP CONFIDENTIAL

PSTOP=0V, VBUS=5V, Charging termination, Measure

current into VBAT

I_SB_VBAT=11.2uA

5.7 Temperature Rise Test in Discharging Mode

fsw = 300kHz, L = 2.2uH, RS1 = 10mR, RS2 = 5mR, COMP = 10k + 22nF, VBAT=3.6V

Test Condition

Test Result

VBUS=5V, IBUS=3A, Temperature rise of IC surface

T_RISE=13°C

VBUS=9V, IBUS=2A, Temperature rise of IC surface

T_RISE=23°C

VBUS=12V, IBUS=1.5A, Temperature rise of IC surface

T_RISE=32°C

VBUS=12V, IBUS=2A, Temperature rise of IC surface

T_RISE=41°C

5.8 Charging Curve

fsw = 300kHz, L = 2.2uH, RS1 = 10mR, RS2 = 5mR, COMP = 10k + 22nF

Charging mode, VBUS = 5V, Set IBUS_LIM=2A, VBAT=2~4.2V

SC8913 EVM USER GUIDE

SOUTHCHIP SEMICONDUCTOR SOUTHCHIP CONFIDENTIAL

5.9 Other Test

fsw = 300kHz, L = 2.2uH, RS1 = 10mR, RS2 = 5mR, COMP = 10k + 22nF

Test Condition

Test Result

Trickle charge threshold:

VBUS = 5V, Set VBAT_TARGET=4.2V

VBAT_TRCKLE=2.92V(69.5%*VBAT_TARGET)

Trickle charge current:

VBUS = 5V, Set IBUS_LIM=2A

IBUS_TRCKLE=0.251A (12.5%*IBUS_LIM)

Charge termination current threshold:

VBUS = 5V, Set IBUS_LIM=2A, EOC_SET= 0

IBUS_EOC=0.231A (11.5%*IBUS_LIM)

Recharge voltage threshold:

VBUS=12V, Set VBAT_TARGET=4.2V

VBAT_RECHRG=4.01V (95.5%*VBAT_TARGET)

Battery over voltage threshold:

VBUS = 5V, Set VBAT_TARGET=4.2V

VBAT_OVP=4.398 (105%*VBAT_TARGET)

VINREG voltage:

VBUS=5V, Set VINREG=4.5V

VINREG=4.531V

VBAT under voltage threshold:

VBAT_UVLO=2.40V

VBUS under voltage threshold:

VBUS_UVLO=2.53V

VBUS standby current:

VBUS=5V, PSTOP=3.3V, AD_START=0

I_SB_VBUS =68.9uA

(Note: VBUS resistor divider consumes 40uA, due to VBAT

flowing through body diode to VBUS)

VBUS standby current:

VBUS=5V, PSTOP=3.3V, AD_START=1

I_SB_VBUS_ADC =633uA

VBUS supply current:

VBUS=5V, PSTOP=0V

IQ_VBUS=1.97mA

Southchip SC8913 EVM User manual

Popular Semiconductor manuals by other brands