GÄN GS66508B-EVBDB1 User manual

GS66508B-EVBDB1
650V GaN E-HEMT Evaluation Board User’s Guide
___________________________________________________________________________________________________________________
GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com 1
Please refer to the Evaluation Board/Kit Important Notice on page 30
GS66508B-EVBDB1
GaN E-HEMT Daughter Board and GS665MB-EVB
Evaluation Platform
User’s Guide
Visit www.gansystems.com for the latest version of this user’s guide.
DANGER!
This evaluation kit is designed for engineering evaluation in a controlled
lab environment and should be handled by qualified personnel ONLY.
High voltage will be exposed on the board during the test and even brief
contact during operation may result in severe injury or death.
Never leave the board operating unattended. After it is de-energized,
always wait until all capacitors are discharged before touching the board.
CAUTION
This product contains parts that are susceptible to damage by electrostatic
discharge (ESD). Always follow ESD prevention procedures when
handling the product.

GS66508B-EVBDB1
650V GaN E-HEMT Evaluation Board User’s Guide
___________________________________________________________________________________________________________________
GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com 2
Please refer to the Evaluation Board/Kit Important Notice on page 30
Overview
The GS66508B-EVBDB1 daughter board style evaluation kit consists of two GaN Systems 650V GaN
Enhancement-mode HEMTs (E-HEMTs) and all necessary circuits including half bridge gate drivers,
isolated power supplies and optional heatsink to form a functional half bridge power stage. It allows
users to easily evaluate the GaN E-HEMT performance in any half bridge-based topology, either with the
universal mother board (P/N: GS665MB-EVB) or for quick prototyping of a users’ own system design.
Features
•Serves as a reference design and evaluation tool as well as deployment-ready solution for easy in-
system evaluation.
•Vertical mount style with height of 35mm, which fits in majority of 1U design and allows
evaluation of GaN E-HEMT in traditional through-hole type power supply board.
•Current shunt position for switching characterization testing
•Universal form factor and footprint for all products
The daughter board and universal mother board ordering part numbers are below:
Table 1 Ordering part numbers
Part Number GaN E-HEMT
P/N:
Description
GS66508B-EVBDB1 GS66508B GaN E-HEMT bottom side cooled 650V/30A, 50mΩ
Analog Devices isolated driver ADUM4121ARZ
GS665MB-EVB
Universal 650V Mother Board
Control and Power I/Os
The daughter board GS6650B8-EVBDB1 circuit diagram is shown in Figure 1. The control logic inputs on
2x3 pin header J1 are listed below:
Table 2 Control pins
Pin
Descriptipon
ENA
Enable input. It is internally pulled up to VCC, a low logic disables all the PWM gate
drive outputs.
VCC +5V auxillary power supply input for logic circuit and gate driver. On the daughter
board there are 2 isolated 5V to 9V DC/DC power supplies for top and bottom switches.
VDRV
Optional 9V gate drive power input. This pin allows users to supply separate gate drive
power supply. By default VDRV is connected to VCC on the daughter board via a 0 ohm
jumper FB1. If bootstrap mode is used for high side gate drive, connect VDRV to 9V
PWMH
High side PWM logic input for top switch Q1. It is compatible wth 3.3V and 5V
PWML
Low side PWM logic input for bottom switch Q2. It is compatible wth 3.3V and 5V
0V
Logic inputs and gate drive power supply ground return.

GS66508B-EVBDB1
650V GaN E-HEMT Evaluation Board User’s Guide
___________________________________________________________________________________________________________________
GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com 3
Please refer to the Evaluation Board/Kit Important Notice on page 30
Power pins
The 3 power pins are
•VDC+: Input DC Bus voltage
•VSW: Switching node output
•VDC-: Input DC bus voltage ground return. Note that control ground 0V is isolated from VDC-.
Figure 1 - GS66508B-EVBDB1 Evaluation Board Block Diagram
GS66508B-EVBDB1 half bridge daughter board
Figure 2- GS66508B-EVBDB top side

GS66508B-EVBDB1
650V GaN E-HEMT Evaluation Board User’s Guide
___________________________________________________________________________________________________________________
GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com 4
Please refer to the Evaluation Board/Kit Important Notice on page 30
Figure 3- GS66508B-EVBDB bottom side
A. 2x GaN Systems 650V E-HEMT GS66508B, 30A/50mΩ
B. Decoupling capacitors C4-C11
C. 2 x Analog Devices ADuM4121ARZ Isolated gate driver
D. Optional current shunt position JP1.
E. Test points for bottom Q2 VGS.
F. Recommended probing positions for Q2 VDS.
G. Optional bootstrap circuit D1/R1 (unpopulated).
H. 5V-9V isolated DC/DC gate drive power supply
GaN E-HEMTs
This daughter board includes two GaN Systems GS66508B (650V/30A, 50mΩ) E-HEMTs in a GaNPX®
bottom cooled package. The large S pad serves as the Source connection and thermal pad. Pin 4 is the
Kelvin source connection for the gate drive return.
Figure 4- Package outline of GS66508B

GS66508B-EVBDB1
650V GaN E-HEMT Evaluation Board User’s Guide
___________________________________________________________________________________________________________________
GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com 5
Please refer to the Evaluation Board/Kit Important Notice on page 30
Gate driver circuit
•The half bridge evalualtion boards use two Analog Devices high voltage, isolated gate drivers
(ADuM4121ARZ) to drive the GaN transistors directly. The ADuM4121ARZ gate driver is used
to isolate and drive the GaN transistor, operating at high DC bus voltage. It has a rail-to-rail
output with maximum output current of 2A to turn the GaN device on and off efficiently and
reliably. An external 20Ω gate resistor is used to limit the current for sourcing and sinking.
•The ADuM4121ARZ has a propagation delay of less than 53 ns and typical rise and fall times of
approximately 18 ns. The very high Common-mode transient immunity (CMTI) of 150 kV/us
(min) isolates high transient noise during the high frequency operation and prevents erroneous
outputs.
•The GaN E-HEMT switching speed and slew rate can be directly controlled by the gate resistors.
By default the turn-on/turn-off gate resistors, R6/R12, are 20Ω. The user can adjust the values of
gate resistors to fine tune the turn-on and turn-off speed.
•FB2/FB3 are footprints for optional ferrite bead. By default they are populated with 0Ω jumpers.
If gate oscillation is observed, it is recommended to replace them with ferrite bead with Z=10-
20Ω@100MHz.
Figure 5- Gate driver circuit
Gate drive power supply
•5V-9V isolated DC/DC converters are used for the gate drive. The 9V output is regulated down to
6V for the gate driver.
•By default gate drive supply input VDRV is tied to VCC +5V via 0Ω jumper (FB1). Remove FB1 if
separate gate drive input voltage is to be used.
Bootstrap mode
•The board has the option for users to experiment with non-isolated bootstrap circuit with
following circuit changes:

GS66508B-EVBDB1
650V GaN E-HEMT Evaluation Board User’s Guide
___________________________________________________________________________________________________________________
GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com 6
Please refer to the Evaluation Board/Kit Important Notice on page 30
oRemove PS2 and short circuit pin 2 to 5 and pin 1 to 4.
oPopulate D1/ R1 (not supplied): D1 is the high voltage bootstrap diode (for example ES1J)
and use 1-2Ω 0805 SMD resistor on R1. Depopulate PS1, LED1 and replace C2 with 1uF
capacitor.
oRemove 0Ω jumper at FB1 and supply +9V at VDRV.
Figure 6 - Gate drive power supply with optional bootstrap mode
Current shunt JP1
•The board provides an optional current shunt position JP1 between the source of Q2 and power
ground return. This allows drain current measurement for switching characterization test such as
Eon/Eoff measurement.
•The JP1 footprint is compatible with T&M Research SDN series coaxial current shunt
(recommended P/N: SDN-414-10, 2GHz B/W, 0.1Ω)
•If current shunt is not used JP1 must be shorted. JP1 affects the power loop inductance and its
inductance should be kept as low as possible. Use a copper foil or jumper with low inductance.
CAUTION
Check the JP1 before the first time use. To complete the circuit JP1 needs to
be either shorted or a current shunt must be inserted before powering up.

GS66508B-EVBDB1
650V GaN E-HEMT Evaluation Board User’s Guide
___________________________________________________________________________________________________________________
GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com 7
Please refer to the Evaluation Board/Kit Important Notice on page 30
Figure 7 - Current shunt position JP1
Measurement with current shunt
1. When measuring VSW with current shunt, ensure all channel probe grounds and current shunt
BNC output case are all referenced to the source end of Q2 before the current shunt. The
recommended setup of probes is shown as below.
2. The output of coaxial current shunt can be connected to oscilloscope via 50Ωtermination
impedance to reduce the ringing.
3. The measured current is inverted and can be scaled by using: Id=Vid/Rsense.
Figure 8- Recommended probe connection with current shunt
VGL
VSL
VSW
BNC case
To oscilloscope
probe input (use
50Ω termination)
BNC tip
V
DS
V
GS
I
D

GS66508B-EVBDB1
650V GaN E-HEMT Evaluation Board User’s Guide
___________________________________________________________________________________________________________________
GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com 8
Please refer to the Evaluation Board/Kit Important Notice on page 30
Thermal design
1. GS66508B has a thermal pad at the bottom side for heat dissipation. The heat is transferred to the
bottom side of PCB using thermal vias and copper plane.
2. A heatsink (35x35mm size) can be attached to the bottom side of board for optimum cooling.
Thermal Interface Material (TIM) is needed to provide electrical insulation and conformance to
the PCB surface. The daughter board evaluation kit includes a sample 35x35mm fin heatsink (not
installed), although other heatsinks can also be used to fit users’ system design.
3. A thermal tape type TIM (Berguist®Bond-Ply 100) is chosen for its easy assembly. The supplied
heatsink has the thermal tape pre-applied so simply peel off the protective film and attach the
heatsink to the back of board as marked in Figure 3.
4. Two optional mounting holes as shown in Figure 9 are provided for mounting customized
heatsink using screws.
5. Using the supplied heatsink and TIM, the overall junction to ambient thermal resistance RthJ-A is
~9°C/W with 500LFM airflow.
6. Forced air cooling is recommended for power testing.
Figure 9 The daughter board with heatsink attached
CAUTION:
There is no on-board over-temperature protection. Device temperature must be closely monitored
during the test. Never operate the board with device temperature exceeding TJ_MAX (150°C)

GS66508B-EVBDB1
650V GaN E-HEMT Evaluation Board User’s Guide
___________________________________________________________________________________________________________________
GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com 9
Please refer to the Evaluation Board/Kit Important Notice on page 30
Using GS66508B-EVBDB1 with universal mother board GS665MB-
EVB
Figure 10 - 650V universal mother board GS665MB-EVB
GaN Systems offers a universal 650V mother board (ordering part number: GS665MB-EVB, sold
separately) that can be used as the basic evaluation platform for all the daughter boards.
The universal 650V mother board evaluation kit includes following items:
1. Mother board GS665MB-EVB
2. 12VDC Fan
12V input
The board can be powered by 9-12V on J1. On-board voltage regulator creates to 5V for daughter board
and control logic circuits. J3 is used for external 12VDC fan.
12V INPUT
(+)
5V Power Supply
CIN
VSW
PWM control & dead
time circuit
Daughter Board
Probing point for VSW
For Ext.
12VDC Fan
Airflow direction
Optional Cout
VDC- VOUT
VDC-
VDC+

GS66508B-EVBDB1
650V GaN E-HEMT Evaluation Board User’s Guide
___________________________________________________________________________________________________________________
GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com 10
Please refer to the Evaluation Board/Kit Important Notice on page 30
PWM control circuit
Figure 11 - PWM control input and dead time circuit
Figure 12 - On board dead time generatrion circuit
The top and bottom switches PWM inputs can be individually controlled by two jumpers J4 and J6. Users
can choose between a pair of complementary on-board internal PWM signals (non-inverted and inverted,
controlled by J7 input) with dead time or external high/low side drive signals from J5 (users’ own control
board).
An on-board dead time generation circuit is included on the mother board. Dead time is controlled by
two RC delay circuits, R6/C12 and R5/C11. The default dead time is set to about 100ns. Additionally two
potentiometers locations are provided (TR1/TR2, not included) to allow fine adjustment of the dead time
if needed.
0V
D1 PMEG2005EB
SOD523
R6
1K00
TR12K C11
100pF
0V
R5
1K00
C10
1uF
C9
0.1uF
+5V
J7
112538 1
2
3 4 5
R4
100R
R1206
R2
100R
R1206
U2A
74VHC132
3
1
2
147
0V
R1
49R9
0V
D2 PMEG2005EB
SOD523
TR22K
C12
100pF
0V
U2B
74VHC132
4
5
6
U2C
74VHC132
9
10
8
U2D
74VHC132
12
13
11
TP7
TP8
DNP
DNP
PWM
OUTPUT
INVERTED
PWM OUTPUT
R3
49R9
DNP
DNP
R7
49R9

GS66508B-EVBDB1
650V GaN E-HEMT Evaluation Board User’s Guide
___________________________________________________________________________________________________________________
GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com 11
Please refer to the Evaluation Board/Kit Important Notice on page 30
WARNING
ALWAYS double check the jumper setting and PWM gate drive signals before applying power.
Incorrect PWM inputs or jumper settings may cause device failures
Test points
Test points are designed in groups/pairs to facilitate probing:
Test points
Name
Description
TP1/TP2
+5V/0V
5V bias power
TP7/TP8
PWMIN/0V
PWM input signal from J7
TP4/TP3/TP13
PWMH/PWML/0V
High/low side gate signals to daughter board
TP9/TP10
VDC+/VDC-
DC bus voltage
TP11/TP12
VOUT/VDC-
Output voltage
TP6/TP5
VSW/VDC-
Switching node output voltage (for HV oscilloscope probe)
Power connections
CON1-CON7 mounting pads are designed to be compatible with following mounting terminals:
•#10-32 Screw mount,
•Banana Jack PCB mount (Keystone P/N: 575-4), or
•PC Mount Screw Terminal (Keystone P/N: 8191)
Output passives (L and C14)
An external power inductor (not included) can be connected between VSW (CON1) and VOUT (CON4/5)
or VDC+ (CON2/3) for double pulse test. Users can choose their inductor size to meet the test
requirement. Generally it is recommended to use power inductor with low inter-winding capacitance to
obtain best switching performance. For the double pulse testing we use 2x 60uH/40Amp inductor (CWS,
P/N: HF467-600M-40AV) in series. C14 is designed to accommodate a film capacitor as output filter.

GS66508B-EVBDB1
650V GaN E-HEMT Evaluation Board User’s Guide
___________________________________________________________________________________________________________________
GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com 12
Please refer to the Evaluation Board/Kit Important Notice on page 30
Using GS66508B-EVBDB1 in system
The daughter board allows users to easily evaluate the GaN performance in their own systems. Refer to
the footprint drawing of GS66508B-EVBDB1 shown in figure 14.
Figure 13 -Recommended footprint drawing of daughter board GS66508B-EVBDB1
135
246
7
89
1. All units are in mm.
2. Pin 1-6: Dia. 1mm
3. Pin 7-9: 1.91mm (75mil) mounting hole for Mill-max Receptacle P/N: 0312-0-15-15-34-27-10-0.

GS66508B-EVBDB1
650V GaN E-HEMT Evaluation Board User’s Guide
___________________________________________________________________________________________________________________
GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com 13
Please refer to the Evaluation Board/Kit Important Notice on page 30
Double pulse test mode
CON1
Q1
CON2
Q2
VDC-
CON4
CON3
LOUT
400V DC
+
VDC+
CON7CON6
VSW
CON5
+5V
0V
PWM
INPUT
(J7)
VDS
IL
ISW
VGL
+6V
0V
VDS
VGL
IL
t0 t1 t2 t3
T
ON1
Figure 14 - Double pulse test setup
Double pulse test allows easy evaluation of device switching performance at high voltage/current
without the need of actually running at high power. It can also be used for switching loss (Eon/Eoff)
measurement and other switching characterization parameter test.
The circuit configuration and operating principle can be found in Figure 13:
1. The output inductor is connected to the VDC+.
2. At t0 when Q2 is switched on, the inductor current starts to ramp up until t1. The period of first
pulse Ton1 defines the switching current ISW = (VDS*TON1) / L.
3. t1-t2 is the free wheeling period when the inductor current ILforces Q1 to conduct in reverse.
4. t1 (turn-off) and t2 (turn-on) are of interest for this test as they are the hard switching trasients for
the half bridge circuit when Q2 is under high switching stress.
5. The second pulse t2-t3 is kept short to limit the peak inductor current at t3.
The double pulse signal can be generated using programmable signal generaotor or microcontroller/DSP
board. As this test involves high switching stress and high current, it is recommended to set the double
pulse test gate signal as single trigger mode or use long repetition period (for example >50-100ms) to void
excess stress to the switches. Q1 can be kept off during the test or driven synchronously (J4 set to OFF or
INT_INV) and Q2 is set to INT (or EXT position if PWM signal is from J5).
WARNING
Limit the maximum switching test current to 30A and ensure maximum drain voltage, including
ringing, is kept below 650V for pulse testing. Exceeding this limit may cause damage to the devices.

GS66508B-EVBDB1
650V GaN E-HEMT Evaluation Board User’s Guide
___________________________________________________________________________________________________________________
GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com 14
Please refer to the Evaluation Board/Kit Important Notice on page 30
Buck/Standard half bridge mode
CON1
Q1
CON2
Q2
VDC-
CON4
CON3
L
OUT
400V DC
+
VDC+
CON7
CON6
VSW
CON5
C
OUT RLoad
This is standard half bridge configuration that can be used in
following circuits :
•Synchronous Buck DC/DC
•Single phase half bridge inverter
•ZVS half bridge LLC
•Phase leg for full bridge DC/DC or
•Phase leg for a 3-phase motor drive
Jumper setting:
•J4 (Q1): INT
•J6 (Q2): INT_INV
Boost mode
CON1
Q1
CON2
Q2
VDC-
CON4
CON3
L
IN
VDC+
CON7
CON6
VSW
CON5
INPUT
VIN
When the output becomes the input and the load is
attached between VDC+ and VDC-, the board is
converted into a boost mode circuit and can be used for:
•Synchronous Boost DC/DC
•Totem pole bridgeless PFC
Jumper setting:
•J4 (Q1): INT_INV
•J6 (Q2): INT

GS66508B-EVBDB1
650V GaN E-HEMT Evaluation Board User’s Guide
___________________________________________________________________________________________________________________
GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com 15
Please refer to the Evaluation Board/Kit Important Notice on page 30
Quick Start procedure – Double pulse test
Follow the instructions below to quickly get started with your evaluation of GaN E-HEMT. Equipment
and components you will need:
•Four-channel oscilloscope with 500MHz bandwidth or higher
•high bandwidth (500MHz or higher) passive probe
•high bandwidth (500MHz) high voltage probe (>600V)
•AC/DC current probe for inductor current measurement
•12V DC power supply
•Signal generator capable of creating testing pulses
•High voltage power supply (0-400VDC) with current limit.
•External power inductor (recommend toroid inductor 50-200uH)
1. Check the JP1 on daughter board GS66508B-EVBDB1. Use a copper foil and solder to short JP1.
2. Install GS66508B-EVBDB1 on the mother board. Press all the way down until you feel a click. Connect
probe between VGL and VSL for gate voltage measurement.
3. Set up the mother board:
a. Connect 12VDC bias supply to J1.
b. Connect PWM input gate signal (0-5V) to J7. If it is generated from a signal generator ensure
the output mode is high-Z mode.
c. Set J4 to OFF position and J7 to INT.
d. Set High voltage (HV) DC supply voltage to 0V and ensure the output is OFF. Connect HV
supply to CON2 and CON6.
e. Use HV probe between TP6 and TP5 for Vds measurement.
f. Connect external inductor between CON1 and CON3. Use current probe to measure inductor
current IL.
4. Set up and check PWM gate signal:
a. Turn-on 12VDC power.
b. Check the 2 LEDs on the daughter board. They should be turned on indicating the isolated
9V is present.
c. Set up signal generator to create the waveforms as shown in Figure 13. Use equation ISW =
(VDS*TON1) / L to calculate the pulse width of the first pulse and ensure the Isw_max is ≤30A at
400VDC.
d. Set the operation mode to either single trigger or Burst mode with repetition period of 100ms.
e. Turn on the PWM output and check on the oscilloscope to make sure the VGL waveform is
present and matches the PWM input.
5. Power-on:
a. Turn on the output of the HV supply. Start with low voltage and slowly ramp the voltage up
until it reaches 400VDC. During the ramping period closely observe the the voltage and
current waveforms on the oscilloscope.
6. Power-off:
a. After the test is complete, slowly ramp down the HV supply voltage to 0V and turn off the
output. Then turn off the 12V bias supply and signal generator output.

GS66508B-EVBDB1
650V GaN E-HEMT Evaluation Board User’s Guide
___________________________________________________________________________________________________________________
GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com 16
Please refer to the Evaluation Board/Kit Important Notice on page 30
Figure 15 Double pulse test setup example (GS66508B-EVBDB1)

GS66508B-EVBDB1
650V GaN E-HEMT Evaluation Board User’s Guide
___________________________________________________________________________________________________________________
GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com 17
Please refer to the Evaluation Board/Kit Important Notice on page 30
Test results – GS66508B-EVBDB1
Double Pulse test (VDS=400V, IMAX = 30A, L=120uH, RG(ON)=20Ω, RG(OFF)=20Ω)
Figure 16 - 400V/30A double pulse test waveform
Figure 16 shows the hard switching on waveforms at 400V/30A. A Vds dip can be seen due to the rising
drain current (di/dt in the power loop ΔV=Lpxdi/dt, where Lp is the total power loop inductance). After
the drain current reaches the inductor current, the Vds starts to fall. The Vgs undershoot spike is caused
by the miller feedback via Cgd under negative dv/dt.
Due to the low gate charge and small RG(OFF) , GaN E-HEMT gate has limited control on the turn-off
dv/dt. Instead the Vds rise time is determined by how fast the turn-off current charges switching node
capacitance (Coss).
The low Coss of GaN E-HEMT and low parasitic inductance of GaNP® package together with optimized
PCB alyout, enables a fast and clean turn-off Vds waveform with only 50V the turn-off Vds overshoot at
dv/dt > 100V/ns. The measured rise time is 3.9ns at 400V and 30A hard turn-off。

GS66508B-EVBDB1
650V GaN E-HEMT Evaluation Board User’s Guide
___________________________________________________________________________________________________________________
GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com 18
Please refer to the Evaluation Board/Kit Important Notice on page 30
Figure 17 -Double pulse test switching transient - hard switching turn-on 400V/30A
Figure 18 -Double pulse test switching transient - hard switching turn-off 400V/30A

GS66508B-EVBDB1
650V GaN E-HEMT Evaluation Board User’s Guide
___________________________________________________________________________________________________________________
GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com 19
Please refer to the Evaluation Board/Kit Important Notice on page 30
Switching Loss energy (Eon/Eoff) measurement
A T&M search coaxial current shunt (SDN-414-10, 0.1Ω) is installed for switching loss measurement as
shown below.
Figure 1917 - Eon/Eoff measurement probe connection with current shunt
Figure 2018 -Eon/Eoff measurement and test bench setup
The switching energy can be calculated from the measured switching waveform Psw = Vds*Id. The
integral of the Psw during switching period is the measured switching loss. The channel deskewing is
critical for measurement accurary. It is recommended to manually deskew Id against Vds as shown in
Figure 20. The drain current spike is caused by charging the high side switch Coss (Qoss loss).

GS66508B-EVBDB1
650V GaN E-HEMT Evaluation Board User’s Guide
___________________________________________________________________________________________________________________
GS66508B-EVBDB1 UG rev. 190605 © 2019 GaN Systems Inc. www.gansystems.com 20
Please refer to the Evaluation Board/Kit Important Notice on page 30
Figure 21 - Turn-on switching loss measurement (Eon=106uJ, 400V/30A)
Figure 19 - Turn-off switching loss measurement (Eoff=76 uJ, 400V/30A)