STP6NA60
STP6NA60FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
■TYPICAL RDS(on) =1Ω
■±30V GATE TO SOURCE VOLTAGE RATING
■100% AVALANCHE TESTED
■REPETITIVE AVALANCHE DATA AT 100oC
■LOW INTRINSIC CAPACITANCES
■GATE GHARGE MINIMIZED
■REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The
optimized cell layout coupled with a new
proprietary edge termination concur to give the
device low RDS(on) and gate charge, unequalled
ruggedness and superior switching performance.
APPLICATIONS
■HIGH CURRENT, HIGH SPEED SWITCHING
■SWITCH MODE POWERSUPPLIES (SMPS)
■DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
TYPE VDSS RDS(on) ID
STP6NA60
STP6NA60FI 600 V
600 V <1.2Ω
<1.2Ω6.5 A
3.9 A
123
TO-220 ISOWATT220
November 1996
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP6NA60 STP6NA60FI
VDS Drain-source Voltage (VGS =0) 600 V
V
DGR Drain-gate Voltage (RGS =20kΩ)600V
V
GS Gate-source Voltage ±30 V
IDDrain Current (continuous) at Tc=25o
C6.53.9A
I
D
Drain Current (continuous) at Tc=100o
C4.3 2.6A
I
DM(•) Drain Current (pulsed) 26 26 A
Ptot Total Dissipation at Tc=25o
C 125 45 W
Derating Factor 1 0.36 W/oC
VISO Insulation Withstand Voltage (DC) 2000 V
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
(•) Pulsewidth limited by safe operating area
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