Panasonic 2SC5295J User manual

Transistors
1
Publication date: December 2002 SJC00283BED
2SC5295J
Silicon NPN epitaxial planar type
For 2 GHz band low-noise amplification
■Features
•High transition frequency fT
•Low collector output capacitance (Common base, input open cir-
cuited) Cob
•SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open) ICBO VCB =10 V, IE=01µA
Emitter-base cutoff current (Collector open) IEBO VEB =1 V, IC=01µA
Forward current transfer ratio *hFE VCE =8 V, IC=20 mA 50 170 
Transition frequency fTVCE =8 V, IC=15 mA, f =1.5 GHz 7.0 8.5 GHz
Collector output capacitance Cob VCB =10 V, IE=0, f =1 MHz 0.6 1.0 pF
(Common base, input open circuited)
Foward transfer gain S21e2VCE =8 V, IC=15 mA, f =1.5 GHz 7 9 dB
Maximum unilateral power gain GUM VCE =8 V, IC=15 mA, f =1.5 GHz 10 dB
Noise figure NF VCE =8 V, IC=7 mA, f =1.5 GHz 2.2 3.0 dB
■Electrical Characteristics Ta=25°C ±3°C
Unit: mm
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 15 V
Collector-emitter voltage (Base open) VCEO 10 V
Emitter-base voltage (Collector open) VEBO 2V
Collector current IC65 mA
Collector power dissipation PC125 mW
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Marking Symbol: 3S
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank Q R
hFE 50 to 120 100 to 170
0.27 ±0.02
3
12
0.12
+0.03
–0.01
0.80
±0.05
(0.80)
0.85
1.60
±0.05
0 to 0.02
0.10 max.
0.70
+0.05 –0.03
(0.375)
5˚
5˚
1.60
+0.05
–0.03
1.00 ±0.05
(0.50)(0.50)
+0.05 –0.03
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).

2SC5295J
2SJC00283BED
VCE(sat) IChFE ICCob VCB
PCTaICVCE ICVBE
0
140
120
100
60
80
40
20
0 1406020 80 12040 100
Ambient temperature Ta(°C)
Collector power dissipation PC(mW)
012108264
0
30
25
20
15
10
5
T
a
=25°C
I
B
=250 µA
200 µA
150 µA
100 µA
50 µA
Collector-emitter voltage VCE (V)
Collector current IC(mA)
0 0.2 0.6 0.8 1.0 1.20.4 1.4
0
120
100
80
60
40
20
V
CE
=8 V
T
a
=85°C
25°C−25°C
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA)
0.01
0.1
0.1 1 10 100
I
C
/ I
B
=10
T
a
= 85°C
25°C
−25°C
Collector current I
C
(mA)
Collector-emitter saturation voltage V
CE(sat)
(V)
1 10 100
0
160
120
40
100
140
80
20
60
V
CE
=8 V
T
a
=85°C
25°C
−25°C
Collector current IC(mA)
Forward current transfer ratio hFE
0128416
0.1
10
1
f =1 MHz
T
a
=25°C
Collector-base voltage VCB (V)
Collector output capacitance (Common base, input open circuited) Cob (pF)
This product complies with the RoHS Directive (EU 2002/95/EC).

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