Panasonic 2SD1328 User manual

Transistors
1
Publication date: February 2003 SJC00216BED
2SD1328
Silicon NPN epitaxial planar type
For low-voltage output amplification
For muting
For DC-DC converter
■Features
•Low collector-emitter saturation voltage VCE(sat)
•Low ON resistance Ron
•High foward current transfer ratio hFE
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 25 V
Collector-emitter voltage (Base open) VCEO 20 V
Emitter-base voltage (Collector open) VEBO 12 V
Collector current IC0.5 A
Peak collector current ICP 1A
Collector power dissipation PC200 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC=10 µA, IE=025V
Collector-emitter voltage (Base open) VCEO IC=1 mA, IB=020V
Emitter-base voltage (Collector open) VEBO IE=10 µA, IC=012V
Collector-base cutoff current (Emitter open) ICBO VCB =25 V, IE=0 100 nA
Forward current transfer ratio *1,2 hFE VCE =2 V, IC=0.5 A 200 800 
Collector-emitter saturation voltage *1VCE(sat) IC=0.5 A, IB=20 mA 0.13 0.40 V
Base-emitter saturation voltage *1VCE(sat) IC=0.5 A, IB=50 mA 1.2 V
Transition frequency fTVCB =10 V, IE=−50 mA, f =200 MHz 200 MHz
Collector output capacitance Cob VCB =10 V, IE=0, f =1 MHz 10 pF
ON resistance *3RON 1.0 Ω
■Electrical Characteristics Ta=25°C ±3°C
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol: 1D
Rank R S T No-rank
hFE 200 to 350 300 to 500 400 to 800 200 to 800
Marking symbol 1DR 1DS 1DT 1D
0.40+0.10
–0.05
(0.65) 1.50+0.25
–0.05
2.8+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90+0.20
–0.05
0.16+0.10
–0.06
0.4±0.2
5˚
10˚
0 to 0.1 1.1+0.2
–0.1
1.1+0.3
–0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification *3: Ron Measuremet circuit
VV
1 kΩ
Ron
=VB× 1
000 (Ω)
VA− VB
f = 1 kHz
V = 0.3 V
VB
IB=1 mA
VA
Product of no-rank is not classified and have no marking symbol for rank.
This product complies with the RoHS Directive (EU 2002/95/EC).

2SD1328
2SJC00216BED
VBE(sat) IChFE ICfTIE
PCTaICVCE VCE(sat) IC
Cob VCB
0 16040 12080
0
240
200
160
120
80
40
Collector power dissipation PC(mW)
Ambient temperature Ta(°C)
0654132
0
1.2
1.0
0.8
0.6
0.4
0.2
Ta=25°C
2.5 mA
2.0 mA
1.5 mA
0.5 mA
1.0 mA
3.0 mA
3.5 mA
IB=4.0 mA
Collector current IC(A)
Collector-emitter voltage VCE (V)
0.01 0.1 1 10
0.01
0.1
1
10
100 I
C
/ I
B
=25
25°C
−25°C
T
a
=75°C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(A)
0.01 0.1 1 10
0.01
0.1
1
10
100 I
C
/ I
B
=10
T
a
=−25°C
25°C
75°C
Base-emitter saturation voltage V
BE(sat)
(V)
Collector current I
C
(A)
0.01 0.1 1 10
0
1 200
1 000
800
600
400
200
V
CE
=2 V
T
a
=75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(A)
−1−10 −100
0
400
300
100
200
V
CB
=10 V
T
a
=25°C
Transition frequency f
T
(MHz)
Emitter current I
E
(mA)
1 10 100
0
24
20
16
12
8
4
IE=0
Ta=25°C
f =1 MHz
Collector-base voltage V
CB
(V)
Collector output capacitance (Common base, input open circuited) C
ob
(pF)
This product complies with the RoHS Directive (EU 2002/95/EC).

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