Tyco MA-COM MAAPGM0028 User manual

2.0-6.5 GHz 0.5W Power Amplifier MAAPGM0028
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: [phone] / Fax: [phone]
• Europe Tel: [phone] / Fax: [phone]
• Asia/Pacific Tel: [phone] / Fax: [phone]
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3096
Preliminary Information
1
Features
♦ 0.5 Watt Saturated Output Power Level
♦ Variable Drain Voltage (4-10V) Operation
♦ MSAG™ Process
Primary Applications
♦ MMDS, WLL
♦ 5.1- 5.9 GHz HyperLAN
♦ UNII
Description
The MAAPGM0028 is a packaged, 2-stage, 0.5W power
amplifier with on-chip bias networks in a bolt down ceramic
package, allowing easy assembly. This product is fully
matched to 50 ohms on both the input and output. It can be
used as a power amplifier stage or as a driver stage in high
power applications.
Fabricated using M/A-COM’s repeatable, high performance
and highly reliable GaAs Multifunction Self-Aligned Gate
MESFET Process, each device is 100% RF tested on wafer
to ensure performance compliance.
M/A-COM’s MSAG™ process features robust silicon-like
manufacturing processes, planar processing of ion
implanted transistors, multiple implant capability enabling
power, low-noise, switch and digital FETs on a single chip,
and polyimide scratch protection for ease of use with
automated manufacturing processes.
Parameter
Symbol Absolute Maximum Units
Input Power PIN 23.0 dBm
Drain Supply Voltage VDD +12.0 V
Gate Supply Voltage VGG -3.0 V
Quiescent Drain Current (No RF, 40% IDSS) IDQ 470 mA
Junction Temperature TJ 180 °C
Storage Temperature TSTG -55 to +150 °C
Quiescent DC Power Dissipated (No RF) PDISS 3.2 W
Processing Temperature 230 °C
Maximum Operating Conditions 1
1. Operation outside of these ranges may reduce product reliability.
APGM0028
YWWLLLL
Pin Number RF Designator
1 No Connection
2 No Connection
3 RF IN
4 No Connection
5 VGG
9 No Connection
6 No Connection
10 VDD
8 RF OUT
7 No Connection
Downloaded from Elcodis.com electronic components distributor

2.0-6.5 GHz 0.5W Power Amplifier MAAPGM0028
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: [phone] / Fax: [phone]
• Europe Tel: [phone] / Fax: [phone]
• Asia/Pacific Tel: [phone] / Fax: [phone]
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3096
Preliminary Information
2
Parameter Symbol Typical Units
Bandwidth f 2.0-6.5 GHz
Output Power POUT 29 dBm
Power Added Efficiency PAE 25 %
1-dB Compression Point P1dB 26 dBm
Small Signal Gain G 14 dB
Input VSWR VSWR 2:1
Output VSWR VSWR 2.2:1
Gate Supply Current IGG < 2 mA
Drain Supply Current IDD < 450 mA
Noise Figure NF 8 dB
2nd Harmonic 2f -10 dBc
3rd Harmonic 3f -20 dBc
3rd Order Intermodulation Distortion,
Single Carrier Level = 17 dBm IM3 -20 dBm
5th Order Intermodulation Distortion,
Single Carrier Level = 17 dBm IM5 -46 dBm
Electrical Characteristics: TB= 40°C, Z0= 50 Ω, VDD = 8V, IDQ ≈300 mA3, Pin = 18 dBm, RG≈250 Ω
Operating Instructions
This device is static sensitive. Please handle with care. To operate the device,
follow these steps.
1. Apply VGG ≈-1.8V, VDD= 0 V.
2. Ramp VDD to desired voltage, typically 8 V.
3. Adjust VGG to set IDQ, (See Note 3 above).
4. Set RF input.
5. Power down sequence in reverse. Turn VGG off last.
Characteristic Symbol Min Typ Max Unit
Drain Supply Voltage VDD 4.0 8.0 10.0 V
Gate Supply Voltage VGG -2.4 -2.0 -1.5 V
Input Power PIN 18.0 21 dBm
Junction Temperature TJ 150 °C
Package Base Temperature TB Note 2 °C
Thermal Resistance ΘJC 28.4 °C/W
Recommended Operating Conditions
2. Maximum Package Base Temperature = 150°C — ΘJC* VDD * IDQ
3. Adjust VGG between –2.4 to –1.5V to achieve indicated IDQ.
Downloaded from Elcodis.com electronic components distributor

2.0-6.5 GHz 0.5W Power Amplifier MAAPGM0028
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: [phone] / Fax: [phone]
• Europe Tel: [phone] / Fax: [phone]
• Asia/Pacific Tel: [phone] / Fax: [phone]
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3096
Preliminary Information
3
Figure 1. Output Power and Power Added Efficiency vs. Frequency
at VDD = 8V and Pin = 18 dBm
0
10
20
30
40
50
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
Frequency (GHz)
POUT (dBm)
0
10
20
30
40
50
PAE(%)
POUT
PAE
Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage
at fo= 4 GHz
0
10
20
30
40
50
4.0 5.0 6.0 7.0 8.0 9.0 10.0
Drain Voltage (volts)
POUT (dBm)
0
10
20
30
40
50
PAE(%)
POUT
PAE
Figure 3. 1dB Compression Point vs. Drain Voltage
0
10
20
30
40
50
2.02.53.03.54.04.55.05.56.06.5
Frequency (GHz)
P1dB (dBm)
VDD = 4 VDD = 6
VDD = 8 VDD = 10
0
4
8
12
16
20
24
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
Frequency (GHz)
Gain (dB)
1
2
3
4
5
6
7
VSWR
Gain
Input VSWR
Output VSWR
Figure 4. Small Signal Gain and VSWR vs. Frequency at VDD = 8V.
Figure 5. Output Power vs. Input Power
at VDD = 8V
0
10
20
30
40
50
-4 -2 0 2 4 6 8 10 12 14 16 18 20 22
PIN (dBm)
POUT (dBm)
2.0 GHz
4.0 GHz
6.5 GHz
Figure 6. Drain Current vs. Input Power at VDD = 8V.
0.0
0.1
0.2
0.3
0.4
0.5
-4 -2 0 2 4 6 8 10121416182022
Input Power (dBm)
Drain Current (A)
2.0 GHz
4.0 GHz
6.5 GHz
Downloaded from Elcodis.com electronic components distributor

2.0-6.5 GHz 0.5W Power Amplifier MAAPGM0028
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: [phone] / Fax: [phone]
• Europe Tel: [phone] / Fax: [phone]
• Asia/Pacific Tel: [phone] / Fax: [phone]
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3096
Preliminary Information
4
Figure 7. CR-15 Package Dimensions
The CR-15 is a high frequency, low thermal resistance package. The package consists of a
cofired ceramic construction with a copper-tungsten base and iron-nickel-cobalt leads. The finish
consists of electrolytic gold over nickel plate.
APGM0028
Downloaded from Elcodis.com electronic components distributor

2.0-6.5 GHz 0.5W Power Amplifier MAAPGM0028
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: [phone] / Fax: [phone]
• Europe Tel: [phone] / Fax: [phone]
• Asia/Pacific Tel: [phone] / Fax: [phone]
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3096
Preliminary Information
5
RFOUT
RFIN
0.1 µF
VGG
0.1 µF
VDD
RG
(See Electrical Characteristics - Page 2)
100 pF
100 pF
Pin Number RF Designator
1 No Connection
2 No Connection
3 RF IN
4 No Connection
5 VGG
9 No Connection
6 No Connection
10 VDD
8 RF OUT
7 No Connection
Assembly Instructions:
This flange mount style package provides a robust interface between a highly integrated GaAs MMIC device and a circuit board
which may be assembled using conventional surface mount techniques. A thin shim made of a thermally and electrically
conductive, ductile material should be used prior to installation of the CR-15 to improve the thermal and electrical performance of
the package to housing interface. Refer to M/A-COM Application Note #M567* for more information .
For applications where surface mount components are to be installed after the CR-15 installation, this package will not be
damaged when subjected to typical convection or IR oven reflow profiles. Refer to M/A-COM Application Note #M538* for
maximum allowable reflow time and temperature. Alternatively, the package leads may be individually soldered. Whether an iron
or hot gas soldering equipment is used, care should be taken to insure that the temperature is well controlled and electric static
discharge (ESD) safe.
* Application Notes can be found by going to the Site Search Page on M/A-COM’s web page
(http://www.macom.com/search/search.jsp) and searching for the required Application Note.
Biasing Notes:
♦ The 100pF bypass capacitors must be placed as close to the VGG and VDD pins as possible
(recommended < 100 mils).
♦ A negative bias must be applied to VGG before applying a positive bias to VDD to prevent damage to the amplifier.
Figure 8. Recommended Bias Configuration
APGM0028
YWWLLLL
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