Linear Technology DC102 Quick setup guide

1
DEMO MANUAL DC102
50V N-CHANNEL HALF BRIDGE
LT1336 Half-Bridge N-Channel
Power MOSFET Driver
with Boost/Flyback Regulator
D
U
ESCRIPTIO
ThisdemonstrationcircuitisanN-channelhalf-bridgefor
generalpurposeapplications.Thehalf-bridgecanbedriven
with TTL/CMOS level signals into an LT
®
1336, which
drives the N-channel MOSFETs. A self-contained high-
sidedriverregulatorallowsPWMoperationto100%duty
cyclewithoutdiscontinuities.ByaddingacontrollerICand
some other components in the space provided for
prototyping, this demo board can be turned into a com-
plete system solution. The half-bridge consists of four
power MOSFETs, two paralleled topside MOSFETs and
two paralleled bottom side MOSFETs.
, LTC and LT are registered trademarks of Linear Technology Corporation.
PERFORMANCE SUMMARY
UWWW
SYMBOL PARAMETER CONDITION VALUE
V
IN
LT1336 Input Voltage Range 10V to 15V
I
Q
LT1336 Typical Supply Current INTOP = INBOTTOM = 0V 15mA
HV High Voltage Range 0V to 50V (60V Abs Max)
R
DS(ON)
Power MOSFETs R
DS(ON)
V
GS
= 10V 0.09Ω
ESR ESR of Bypass Capacitor 100kHz 0.03Ω
I
PK
Max Ripple Current 4.5A
P
IN
Max Power Input (Note 1) 150W
f
MAX
Max Operating Frequency 100kHz
Operating Temperature Range 0°C to 50°C, VIN = 12V unless otherwise noted.
Note 1: For applications requiring higher input power, attach heat sinks to all power MOSFETs.
Demo Board with a Flyback High-Side Driver Regulator Demo Board with a Boost High-Side Driver Regulator
BOARD PHOTOS

2
DEMO MANUAL DC102
50V N-CHANNEL HALF BRIDGE
PACKAGE AND SCHEMATIC DIAGRAMS
UWW
C3 TO C8
330µF
63V 
× 6
Q2
MTP50N06V
Q4
MTP50N06V
Q3
MTP50N06V
R5
10Ω
1/4W
5%
R3
10Ω
1/4W
5%
R6, 10Ω
1/4W
5%
Q1
MTP50N06V
R4
10Ω
1/4W
5%
C2
1µF
25V
E2
OUT
E1
HV
0V TO 40V
D1
1N4148
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
I
SENSE
SV
+
INTOP
INBOTTOM
UVOUT
SGND
PGND
BGATEFB
SW
SWGND
BOOST
TGATEDR
TGATEFB
TSOURCE
PV
+
BGATEDR
U1
LT1336
BOLD LINES INDICATE HIGH CURRENT PATHS
* SUMIDA RCH-664D-221 KC
DM102A • F02
+
E4
UVOUT
E5
INTOP
E3
V
IN
10V TO 15V
E6
INBOTTOM
E7
GND
R2
2Ω
1/4W
5%
L1*
200µH
R1, 24k
1/4W, 5%
+
+
C1
10µF
25V
D2
1N4148
D5
1N5819
L1 REPLACES THE DASHED 
COMPONENTS IN FIGURE 1
Figure 2. Demonstration Circuit with a Boost High-Side Driver Regulator
C3 TO C8
330µF
63V 
× 6
Q2
MTP50N06V
Q4
MTP50N06V
Q3
MTP50N06V
R5
10Ω
1/4W
5%
R3
10Ω
1/4W
5%
R6
10Ω
1/4W
5%
Q1
MTP50N06V
R4
10Ω
1/4W
5%
C2
1µF
25V
E2
OUT
E1
HV
0V TO 50V
D1
1N4148
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
I
SENSE
SV
+
INTOP
INBOTTOM
UVOUT
SGND
PGND
BGATEFB
SW
SWGND
BOOST
TGATEDR
TGATEFB
TSOURCE
PV
+
BGATEDR
U1
LT1336
*T1 = CTX100-1P
BOLD LINES INDICATE
HIGH CURRENT PATHS
FOR BOOST TOPOLOGY REPLACE COMPONENTS IN DASHED AREA WITH THE INDUCTOR AS SHOWN IN FIGURE 2
DM102A • F01
+
D5
1N5819
T1*
D3
1N4148
R7
6.2k
1/4W
5%
C9
1000pF
25V
D2
1N4148
R2,2Ω
1/4W, 5%
C11
0.1µF
50V
R1
24k
1/4W
5%
C1
10µF
25V
+
E4
UVOUT
E5
INTOP
E6
INBOTTOM
E7
GND
E3
V
IN

10V TO 15V

Figure 1. Demonstration Circuit with a Flyback HIgh-Side Driver Regulator
LT1336CN
TOP VIEW
I
SENSE

SV
+

INTOP
INBOTTOM
UVOUT
SGND
PGND
BGATEFB
SW
SWGND
BOOST
TGATEDR
TGATEFB
TSOURCE
PV
+

BGATEDR
N PACKAGE
16-LEAD PDIP

3
DEMO MANUAL DC102
50V N-CHANNEL HALF BRIDGE
PA SLIST
RT
REFERENCE
DESIGNATOR QUANTITY PART NUMBER DESCRIPTION VENDOR TELEPHONE
C1 1 25SC10M 10µF 25V 20% Electrolytic Capacitor Sanyo [phone]
C2 1 25SC1M 1µF 25V 20% Electrolytic Capacitor Sanyo [phone]
C3 to C8 6 63MV330CZ 330µF 63V Aluminum Capacitor Sanyo [phone]
C9 1 FKC02 1000pF 25V 10% Mylar Capacitor WIMA [phone]
C10 1 25SC10M Option Capacitor Sanyo [phone]
C11 1 MKS2 0.1µF 63V 5% Mylar Capacitor WIMA [phone]
D1 to D3 3 1N4148 Diode Philips [phone]
D5 1 1N5819 Diode Motorola [phone]
L1 1 RCR-664D-221KC 0.99Ω0.30A Inductor (Optional) Sumida [phone]
Q1 to Q4 4 MTP50N06V 50A 60V TO-220 MOSFET Motorola [phone]
R1 to R7 7 1/4W 5% Resistor Any
T1 1 CTX100-1P Transformer Coiltronics [phone]
U1 1 LT1336 IC LTC [phone]
QUICK START GUIDE
Demonstration board 102 is easily set up for evaluation
ofthe LT1336IC. Pleasefollow theprocedure belowfor
error-free operation.
• ConnectthepositiveleadofalowpowersupplytoV
IN
(E3) and the negative lead to GND (E7). The voltage
range of this supply must be between 10V – 15V.
• ConnectthepositiveleadofahighpowersupplytoHV
(E1) and the negative lead to GND (E7). The recom-
mended maximum operating voltage is 50V. The
capacitors, the MOSFETs and the IC are rated at 60V
absolute maximum.
• Connect the driving signals into INTOP (E5) and
INBOTTOM (E6). Taking INTOP high and INBOTTOM
low turns the top MOSFETs on and the bottom
MOSFETsoff.TakingINTOPlowandINBOTTOMhigh
reverses these states. When both inputs are either
highorlow,alltheMOSFETsareoff.Theseinputsare
TTL/CMOS compatible and can withstand input volt-
ages as high as V
IN
.
• Connect the load between OUT (E2) and GND (E7).
OPERATION
U
A general purpose half-bridge is implemented using the
LT1336. Figure 1 is the schematic for this demonstration
board.Thehalf-bridgecanbeused as abuilding block for
anumberofdifferentapplications,includingsynchronous
switching regulators, motor control and class-D amplifi-
ers. By adding the appropriate controller IC in the
prototyping space, a complete system solution can be
created.
This demonstration unit is intended for the evaluation of
the LT1336 half-bridge driver and was not designed for
any other purpose.
To power this demo board, connect a low power 10V to
15VsupplytoV
IN
(E3)andahighpowersupply,upto50V
toHV(E1).ToevaluatetheLT1336drivingthehalf-bridge,
connect two complementary signals from a function

4
DEMO MANUAL DC102
50V N-CHANNEL HALF BRIDGE
OPERATION
U
generator to INTOP (E5) and INBOTTOM (E6). These
inputs to the LT1336 are TTL/CMOS compatible and can
withstand input voltages as high as V
IN
. Both driver
channelsarenoninverting.TheinternallogicoftheLT1336
prevents the top MOSFETs and bottom MOSFETs from
turningonsimultaneouslyunderanyinputconditions.For
instance, when both inputs are high both outputs are
actively held low.
The LT1336 incorporates a small switching regulator to
chargethefloatinghigh-sidedriversupplyabovethehigh
voltage rail. This regulator can provide enough charge to
thefloatingsupplycapacitortoallowthetopdrivertodrive
several power MOSFETs in parallel at 100kHz, its maxi-
mum operating frequency. The regulator voltage across
V
BOOST
– V
TSOURCE
is 10.6V. Unlike bootstrapping tech-
niques with internal charge pumps, the built-in regulator
enables the half-bridge to operate from PWM to DC
without discontinuities.
In conventional half-bridge drivers using bootstrapping
techniques and internal charge pumps, approaching DC
may cause some serious problems. When the duty cycle
approaches 100%, the output pulse width becomes too
narrowforthefloatingcapacitortorecharge.Thiscapaci-
tor is being continuously depleted by the gate charging
currentsofthetopMOSFETs.Theinternalchargepumpis
too weak to provide the currents needed to replenish the
–
+
–
+
V
+
V
+
I
SENSE
INTOP
INBOTTOM
BOOST
TRIP = 10.6V
TRIP = 8.7V
16 SW
SWGND
TGATEDR
TGATEFB
T SOURCE
PV
+
BGATEDR
DC102 FD
SGND
PGND
BIAS
3k
2
4
5
6
1
3k
TOP UV
DETECT
BOTTOM
UV LOCK
2.9V
2.5V
480mV
5V
5V
6V
UVOUT
–
+
15
14
13
12
11
10
9
BGATEFB 8
3
7
Functional Diagram for the LT1336

5
DEMO MANUAL DC102
50V N-CHANNEL HALF BRIDGE
OPERATION
U
floating capacitor. Thus, at a point between 90% and
100% duty cycles, the floating capacitor will be depleted,
causing a discontinuity and potential overdissipation of
the top MOSFETs.
In this demo board the built-in switching regulator of the
LT1336 comes configured as a flyback regulator, as
shown in Figure 1. To configure a flyback regulator, a
resistor,adiode,asmall1:1turnsratiotransformeranda
capacitor are needed. The maximum voltage across the
switch, assuming an ideal transformer, will be about
V
IN
+11.3V.Leakageinductanceinnonidealtransformers
will induce an overvoltage spike at the switch the instant
that it opens. These spikes are clamped using the snub-
bing network D3, C9 and R7. Using the components as
showninFigure1,theflybackregulatorwillrunataround
800kHz.Tolowerthefrequency,increasethevalueofC11;
to raise the frequency, decrease the value of C11.
Theflybackregulatorworksasfollows:whentheswitchis
on, the primary current ramps up as the magnetic field
buildsup.Themagneticfieldinthecoreinducesavoltage
onthesecondarywindingequaltoV
IN
.However,nopower
is transferred to V
BOOST
because the rectifier diode D1 is
reverse biased. The energy is stored in the transformer’s
magneticfield.Whentheprimaryinductorpeakcurrentis
reached, the switch is turned off. Energy is no longer
transferredtothetransformer,causingthemagneticfield
tocollapse.Thecollapsingmagneticfieldinducesachange
involtage across the transformer’s windings.During this
transition the Switch pin’s voltage flies to 10.6V plus a
diodeaboveV
IN
,thesecondaryforwardbiasestherectifier
diode D1 and the transformer’s energy is transferred to
V
BOOST
. Meanwhile, the primary inductor current goes to
zeroandthevoltageatI
SENSE
decaystothelowerinductor
currentthresholdwithatime constant of(R2)(C11), thus
completing the cycle.
Using the flyback regulator allows the maximum voltage
(50V)tobeappliedatthehighvoltagerail,HV.Inapplica-
tionswherethehighvoltageraildoesnotexceed40V,the
boost topology can be used. The advantage, as shown in
Figure2, is simplicity.Only aresistor,asmall inductor,a
diode and a capacitor are needed; there is no need for a
snubbercircuit.ThecurrentdrawnfromV
IN
willbehigher,
however, by a factor of V
BOOST
/V
IN
.
To reconfigure the demo board’s flyback regulator into a
boost regulator, remove the snubber circuit’s compo-
nents, C9, R7, D3 and the transformer T1. Reconnect
diodeD1 andinsertthe optionalinductor as shownin the
Board Photos. Using the components provided with the
demo board (2Ωsense resistor, 200µH inductor and 1µF
capacitor) the boost regulator will run at around 700kHz.
To lower the frequency increase the inductor value; to
increase the frequency decrease the inductor value.
The boost regulator works as follows: when the switch is
on, the inductor current ramps up as the magnetic field
buildsup.Duringthisintervalenergyisbeingstoredinthe
inductorandnopoweristransferredtoV
BOOST
.Whenthe
2Ωresistorsensesthatthepeakinductorcurrenthasbeen
reached, the switch is turned off. Energy is no longer
transferred to the inductor, causing the magnetic field to
collapse. The collapsing magnetic field induces a change
in voltage across the inductor. The Switch pin’s voltage
rises until diode D1 starts conducting. As the inductor
currentrampsdown,thelowerinductorcurrentthreshold
is reached and the switch is turned on, starting the next
cycle.
Current drawn from V
IN
is delivered to V
BOOST
. Some of
this current (~1.5mA) flows through the topside driver to
E2. This current is typically returned to ground via the
bottomMOSFETsortheoutputload.IfthebottomMOSFETs
areoffandtheoutputloadisreturnedtoHV,E2willreturn
the current to HV through the top MOSFET or the output
load. If the HV supply cannot sink current and no load
drawinggreater than 1.5mAis connected tothesupply, a
resistor from HV to ground may be needed to prevent
voltage buildup on the HV supply.

6
DEMO MANUAL DC102
50V N-CHANNEL HALF BRIDGE
PC LAYOUT AND FILM
UW
Component Side Solder Mask
Component Side Silkscreen Component Side
Component Side Pastemask

7
DEMO MANUAL DC102
50V N-CHANNEL HALF BRIDGE
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However,noresponsibilityisassumedforitsuse.LinearTechnologyCorporationmakesnorepresen-
tationthattheinterconnectionofitscircuitsasdescribedhereinwillnotinfringeonexistingpatentrights.
PC LAYOUT AND FILM
UW
Solder Side Solder Side Soldermask

8
DEMO MANUAL DC102
50V N-CHANNEL HALF BRIDGE
LINEAR TECHNOLOGY CORPORATION 1997
LT/GP 0197 500 • PRINTED IN USA
PC FAB DRAWING
U
3.975
4.975
AAA
A
B
B
B
B
C
C
C
C
C
C
C
C
C
C
C
C
CC CC
CC
C
C
C
D
D
DDDD
DDDD
DD
EE
EE E
EE E
EEE EEE
EE
EE
EEEE
F
F
F
G G
G G
H
H
SYMBOL
A
B
C
D
E
F
G
H

DIAMETER
0.095
0.125
0.028
0.032
0.040
0.205
0.156
0.072
NUMBER
OF HOLES
4
4
21
180
24
3
4
2
242
TOTAL HOLES
NOTES:
 1.MATERIAL: FR4 OR EQUIVALENT EPOXY, 2 OZ COPPER CLAD
 THICKNESS 0.062 ±0.006 TOTAL OF 2 LAYERS
 2.FINISH:  ALL PLATED HOLES 0.001 MIN/0.0015 MAX COPPER
 PLATE ELECTRODEPOSITED TIN-LEAD COMPOSTION
 BEFORE REFLOW, SOLDER MASK OVER BARE COPPER
 (SMOBC)
 3.SOLDER MASK: BOTH SIDES USING GREEN PC-401 OR EQUIVALENT
 4.SILKSCREEN: USING WHITE NONCONDUCTIVE EPOXY INK
 5.ALL DIMENSIONS ARE IN INCHES 
DM102A • PC FAB DWG
E
E
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
●
[phone]
FAX: [phone]
●
TELEX: 499-3977
●
www.linear-tech.com

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