National Semiconductor LMH6624 User manual

LMH6624
Ultra Low Noise Wideband Operational Amplifier
General Description
The LMH6624 combines wide bandwidth (1.5 GBW) with
very low input noise (0.92nV/ , 2.3pA/ ) and ultra
low dc errors (100µV V
OS
,±0.1µV/˚C drift) providing a very
precise operational amplifier with wide dynamic range. This
enables the user to achieve closed-loop gains of greater
than 10.
The LMH6624’s traditional voltage feedback topology pro-
vides the following benefits: balanced inputs, low offset volt-
age and offset current, very low offset drift, 81dB open loop
gain, 95dB common mode rejection ratio, and 88dB power
supply rejection ratio.
The LMH6624 operates from ±2.5V to ±6V in dual supply
mode and from +5V to +12V in single supply configuration.
The LMH6624 is stable for closed-loop gain of A
V
≤−10 or
+10 ≤A
V
.
LMH6624 is offered in SOT23-5 and SOIC-8 packages.
Features
V
S
=±6V, T
A
= 25˚C, A
V
= 20, (Typical values unless
specified)
nGain bandwidth 1.5GHz
nInput voltage noise 0.92nV/
nInput offset voltage (limit over temp) 700uV
nSlew rate 350V/µs
nSlew rate (A
V
= 10) 400V/µs
nHD2 @f = 10MHz, R
L
= 100Ω−65dBc
nHD3 @f = 10MHz, R
L
= 100Ω−80dBc
nSupply voltage range (dual supply) ±2.5V to ±6V
nSupply voltage range (single supply) +5V to +12V
nImproved replacement for the CLC425
Applications
nInstrumentation sense amplifiers
nUltrasound pre-amps
nMagnetic tape & disk pre-amps
nWide band active filters
nProfessional Audio Systems
nOpto-electronics
nMedical diagnostic systems
Connection Diagrams
5-Pin SOT23 8−Pin SOIC
20058951
Top View
20058952
Top View
February 2003
LMH6624 Ultra Low Noise Wideband Operational Amplifier
© 2003 National Semiconductor Corporation DS200589 www.national.com

Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
ESD Tolerance
Human Body Model 2000V(Note 2)
Machine Model 200V (Note 9)
V
IN
Differential ±1.2V
Supply Voltage (V
+
-V
−
) 13.2V
Voltage at Input pins V
+
+0.5V, V
−
−0.5V
Soldering Information
Infrared or Convection (20 sec.) 235˚C
Wave Soldering (10 sec.) 260˚C
Storage Temperature Range −65˚C to +150˚C
Junction Temperature (Note 4) +150˚C
Operating Ratings (Note 1)
Operating Temperature Range
(Note 4) −40˚C to +125˚C
Package Thermal Resistance (θ
JA
)(Note 4)
SOIC-8 166˚C/W
SOT23–5 265˚C/W
±2.5V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for at T
A
= 25˚C, V
+
= 2.5V, V
−
= −2.5V, V
CM
= 0V, A
V
= +20, R
F
= 500Ω,R
L
= 100Ω.Boldface limits apply at the temperature extremes. See (Note 12).
Symbol Parameter Conditions Min
(Note 6)
Typ
(Note 5)
Max
(Note 6)
Units
Dynamic Performance
f
CL
−3dB BW V
O
= 400mV
PP
90 MHz
SR Slew Rate(Note 8) V
O
=2V
PP
,A
V
= +20 300 V/µs
V
O
=2V
PP
,A
V
= +10 360
t
r
Rise Time V
O
= 400mV Step, 10% to 90% 4.1 ns
t
f
Fall Time V
O
= 400mV Step, 10% to 90% 4.1 ns
t
s
Settling Time 0.1% V
O
=2V
PP
(Step) 15 ns
Distortion and Noise Response
e
n
Input Referred Voltage Noise f = 1MHz 0.95 nV/
i
n
Input Referred Current Noise f = 1MHz 2.3 pA/
HD2 2
nd
Harmonic Distortion f
C
= 10MHz, V
O
=1V
PP
,R
L
100Ω−60 dBc
HD3 3
rd
Harmonic Distortion f
C
= 10MHz, V
O
=1V
PP
,R
L
100Ω−78 dBc
Input Characteristics
V
OS
Input Offset Voltage V
CM
= 0V −0.75
−0.95
+0.25 +0.75
+0.95
mV
Average Drift (Note 7) V
CM
=0V ±0.2 µV/˚C
I
OS
Input Offset Current V
CM
= 0V −1.5
−2.0
−0.05 +1.5
+2.0
µA
Average Drift (Note 7) V
CM
= 0V 0.6 nA/˚C
I
B
Input Bias Current V
CM
= 0V 13 +20
+25
µA
Average Drift (Note 7) V
CM
= 0V 12 nA/˚C
R
IN
Input Resistance (Note 10) Common Mode 6.6 MΩ
Differential Mode 4.6 kΩ
C
IN
Input Capacitance (Note 10) Common Mode 0.9 pF
Differential Mode 2.0
CMRR Common Mode Rejection
Ratio
Input Referred,
V
CM
= −0.5 to +1.9V
V
CM
= −0.5 to +1.75V
87
85
90 dB
Transfer Characteristics
A
VOL
Large Signal Voltage Gain R
L
= 100Ω,V
O
= −1V to +1V 75
70
79 dB
LMH6624
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±2.5V Electrical Characteristics (Continued)
Unless otherwise specified, all limits guaranteed for at T
A
= 25˚C, V
+
= 2.5V, V
−
= −2.5V, V
CM
= 0V, A
V
= +20, R
F
= 500Ω,R
L
= 100Ω.Boldface limits apply at the temperature extremes. See (Note 12).
Symbol Parameter Conditions Min
(Note 6)
Typ
(Note 5)
Max
(Note 6)
Units
Output Characteristics
V
O
Output Swing R
L
= 100Ω±1.1
±1.0
±1.5
V
No Load ±1.4
±1.25
±1.7
RO Output Impedance f ≤100KHz 10 mΩ
I
SC
Output Short Circuit Current Sourcing to Ground
∆V
IN
= 200mV (Note 3), (Note 11)
90
75
145
mA
Sinking to Ground
∆V
IN
= −200mV (Note 3), (Note 11)
90
75
145
I
OUT
Output Current Sourcing, V
O
= +0.8V
Sinking, V
O
= −0.8V
100 mA
Power Supply
PSRR Power Supply Rejection Ratio V
S
=±2.0V to ±3.0V 82
80
90 dB
I
S
Supply Current No Load 11.4 16
18
mA
±6V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for at T
A
= 25˚C, V
+
= 6V, V
−
= −6V, V
CM
= 0V, A
V
= +20, R
F
= 500Ω,R
L
=
100Ω.Boldface limits apply at the temperature extremes. See (Note 12).
Symbol Parameter Conditions Min
(Note 6)
Typ
(Note 5)
Max
(Note 6)
Units
Dynamic Performance
f
CL
−3dB BW V
O
= 400mV
PP
95 MHz
SR Slew Rate (Note 8) V
O
=2V
PP
,A
V
= +20 350 V/µs
V
O
=2V
PP
,A
V
= +10 400
t
r
Rise Time V
O
= 400mV Step, 10% to 90% 3.7 ns
t
f
Fall Time V
O
= 400mV Step, 10% to 90% 3.7 ns
t
s
Settling Time 0.1% V
O
=2V
PP
(Step) 14 ns
Distortion and Noise Response
e
n
Input Referred Voltage Noise f = 1MHz 0.92 nV/
i
n
Input Referred Current Noise f = 1MHz 2.3 pA/
HD2 2
nd
Harmonic Distortion f
C
= 10MHz, V
O
=1V
PP
,R
L
100Ω−65 dBc
HD3 3
rd
Harmonic Distortion f
C
= 10MHz, V
O
=1V
PP
,R
L
100Ω−80 dBc
Input Characteristics
V
OS
Input Offset Voltage V
CM
= 0V −0.5
−0.7
+0.10 +0.5
+0.7
mV
Average Drift (Note 7) V
CM
=0V ±0.1 µV/˚C
I
OS
Input Offset Current V
CM
= 0V −1.1
−2.5
0.05 1.1
2.5
µA
Average Drift (Note 7) V
CM
= 0V 0.7 nA/˚C
I
B
Input Bias Current V
CM
= 0V 13 +20
+25
µA
Average Drift (Note 7) V
CM
= 0V 12 nA/˚C
R
IN
Input Resistance (Note 10) Common Mode 6.6 MΩ
Differential Mode 4.6 kΩ
LMH6624
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±6V Electrical Characteristics (Continued)
Unless otherwise specified, all limits guaranteed for at T
A
= 25˚C, V
+
= 6V, V
−
= −6V, V
CM
= 0V, A
V
= +20, R
F
= 500Ω,R
L
=
100Ω.Boldface limits apply at the temperature extremes. See (Note 12).
Symbol Parameter Conditions Min
(Note 6)
Typ
(Note 5)
Max
(Note 6)
Units
C
IN
Input Capacitance (Note 10) Common Mode 0.9 pF
Differential Mode 2.0
CMRR Common Mode Rejection
Ratio
Input Referred,
V
CM
= −4.5 to +5.25V
V
CM
= −4.5 to +5.0V
90
87
95 dB
Transfer Characteristics
A
VOL
Large Signal Voltage Gain R
L
= 100Ω,V
O
= −3V to +3V 77
72
81 dB
Output Characteristics
V
O
Output Swing R
L
= 100Ω±4.4
±4.3
±4.9
V
No Load ±4.8
±4.65
±5.2
R
O
Output Impedance f ≤100KHz 10 mΩ
I
SC
Output Short Circuit Current Sourcing to Ground
∆V
IN
= 200mV (Note 3), (Note 11)
100
85
156
mA
Sinking to Ground
∆V
IN
= −200mV (Note 3), (Note 11)
100
85
156
I
OUT
Output Current Sourcing, V
O
= +4.3V
Sinking, V
O
= −4.3V
100 mA
Power Supply
PSRR Power Supply Rejection Ratio V
S
=±5.4V to ±6.6V 82
80
88 dB
I
S
Supply Current No Load 12 16
18
mA
LMH6624
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Note 1: Absolute maximum ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics.
Note 2: Human body model, 1.5Ωin series with 100pF.
Note 3: Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the
maximum allowed junction temperature of 150˚C.
Note 4: The maximum power dissipation is a function of TJ(MAX),θJA, and TA. The maximum allowable power dissipation at any ambient temperature is
PD=(T
J(MAX) -T A)/ θJA . All numbers apply for packages soldered directly onto a PC board.
Note 5: Typical Values represent the most likely parametric norm.
Note 6: All limits are guaranteed by testing or statistical analysis.
Note 7: Average drift is determined by dividing the change in parameter at temperature extremes into the total temperature change.
Note 8: Slew rate is the slowest of the rising and falling slew rates.
Note 9: Machine Model, 0Ωin series with 200pF.
Note 10: Simulation results.
Note 11: Short circuit test is a momentary test. Output short circuit duration is 1.5ms.
Note 12: Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of
the device such that TJ=T
A. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ>TA.
See applications section for information on temperature derating of this device. Absolute maximum ratings indicate junction temperature limits beyond which the
device may be permanently degraded, either mechanically or electrically.
Ordering Information
Package Part Number Package Marking Transport Media NSC Drawing
SOT23-5 LMH6624MF A94A 1k Units Tape and Reel MF05A
LMH6624MFX 3k Units Tape and Reel
SOIC-8 LMH6624MA LMH6624MA 95 Units/Rail M08A
LMH6624MAX 2.5k Units Tape and Reel
LMH6624
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Typical Performance Characteristics
Noise vs. Frequency Amplifier Peaking with Varying R
F
20058950 20058917
Open Loop Frequency Response Over Temperature Open Loop Frequency Response Over Temperature
20058959 20058960
Frequency Response with Varying V
S
Frequency Response with Varying V
S
20058913 20058914
LMH6624
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Typical Performance Characteristics (Continued)
Inverting Frequency Response Inverting Frequency Response
20058916 20058915
Non-Inverting Frequency Response Non-Inverting Frequency Response
20058904 20058903
Non-Inverting Frequency Response Varying V
IN
Non-Inverting Frequency Response Varying V
IN
20058906 20058905
LMH6624
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Typical Performance Characteristics (Continued)
Non-Inverting Frequency Response Varying V
IN
Non-Inverting Frequency Response Varying V
IN
20058908 20058907
Frequency Response with Cap. Loading Frequency Response with Cap. Loading
20058940 20058941
Frequency Response with Cap. Loading Frequency Response with Cap. Loading
20058939 20058938
LMH6624
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Typical Performance Characteristics (Continued)
Sourcing Current vs. V
OUT
Sourcing Current vs. V
OUT
20058957 20058954
Sinking Current vs. V
OUT
Sinking Current vs. V
OUT
20058958 20058956
V
OS
vs. V
SUPPLY
I
OS
vs. V
SUPPLY
20058955 20058953
LMH6624
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Typical Performance Characteristics (Continued)
Distortion vs. Frequency Distortion vs. Frequency
20058944 20058946
Distortion vs. Frequency Distortion vs. Gain
20058945 20058942
Distortion vs. V
OUT
Peak to Peak Distortion vs. V
OUT
Peak to Peak
20058943 20058947
LMH6624
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