NXP Semiconductors AN10907 Installation and operating instructions

AN10907
TEA1613T resonant power supply control IC
Rev. 1 — 28 December 2010 Application note
Document information
Info Content
Keywords TEA1613T, burst mode, adapter, LCD TV, plasma TV, resonant, converter.
Abstract This application note discusses the TEA1613T application functions.
The TEA1613T provides the drive function for the two discrete power
MOSFETs in a resonant half-bridge configuration.
The TEA1613T integrates a controller for a half-bridge resonant converter
(HBC).
The controller for a zero-voltage switching LLC resonant converter
includes a high-voltage level-shift circuit and several protection features
like over-current protection, open-loop protection, capacitive mode
protection and a general purpose latched protection input.
In addition to the normal frequency controlled operation mode, it also
supports burst mode operation.
The proprietary high voltage BCD Powerlogic process makes an efficient,
direct start-up possible from the rectified universal mains voltage. A
second low voltage SOI IC is used for accurate, high speed protection
functions and control.
The integrated functionality makes the TEA1613T very suitable for power
supplies in LCD-TV, plasma televisions, PC power supplies, high-power
office equipment and adapters.
A similar product is the TEA1713, which also contains an integrated PFC
controller.

AN10907 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Application note Rev. 1 — 28 December 2010 2 of 82
NXP Semiconductors AN10907
TEA1613T resonant power supply control IC
Revision history
Rev Date Description
v.1 20101228 first issue

AN10907 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Application note Rev. 1 — 28 December 2010 3 of 82
NXP Semiconductors AN10907
TEA1613T resonant power supply control IC
1. Introduction
1.1 Scope and setup of this document
This application note discusses the TEA1613T functions for applications in general. The
extensive functionality of the TEA1613T leads to a high number of subjects to discuss.
To facilitate the reading of this application note, the setup of this document is made in
such a way, that a chapter or paragraph on a selected subject can be read as a
stand-alone explanation with a minimum number of cross-references to other document
parts or the data sheet. This leads to some repetition of information within the application
note and to descriptions or figures that are similar to the ones published in the TEA1613T
data sheet. In most cases typical values are given to enhance the readability.
Section 1 “Introduction”
Section 2 “TEA1613T highlights and features”
Section 3 “Pin overview with functional description”
Section 4 “Application diagram”
Section 5 “Block diagram”
Section 6 “Supply functions”
Section 7 “MOSFET drivers GATELS and GATEHS”
Section 8 “HBC functions”
Section 9 “Burst mode operation”
Section 10 “Protection functions”
Section 11 “Miscellaneous advice and tips”
Section 12 “Application examples and topologies”
Section 13 “Abbreviations”
Section 14 “Legal information”
Section 15 “Tables”
Section 16 “Figures”
Section 17 “Contents”
Please note that all values provided throughout this document are typical values
unless otherwise stated.
1.2 Related documents
Additional information and tools can be found in other TEA1613T documents such as:
•Data sheet
•Calculation sheet
•User manual of demo board

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Application note Rev. 1 — 28 December 2010 4 of 82
NXP Semiconductors AN10907
TEA1613T resonant power supply control IC
2. TEA1613T highlights and features
2.1 Resonant conversion
Today’s market demands high quality, reliable, small, lightweight and efficient power
supplies.
In principle, the higher the operating frequency, the smaller and lighter the transformers,
filter inductors and capacitors can be. On the other hand, the core, switching and winding
losses of the transformer increases at higher frequencies and become dominant. This
effect reduces efficiency at high frequencies, which limits the minimum size of the
transformer.
The corner frequency of the output filter usually determines the bandwidth of the control
loop. A well-chosen corner frequency allows high operating frequencies for achieving a
fast dynamic response.
Pulse-Width Modulated (PWM) power converters, such as flyback, up- and down
converters, are widely used in low and medium power applications. A disadvantage of
these converters is that the PWM rectangular voltage and current waveforms cause
turn-on and turn-off losses that limit the operating frequency. The rectangular waveforms
also generate broadband electromagnetic energy that can produce ElectroMagnetic
Interference (EMI).
A resonant DC-DC converter produces sinusoidal waveforms and reduces the switching
losses, which allows it to operate at higher frequencies.
Recent environmental considerations have resulted in a need for high efficiency
performance at low loads. Burst-mode operation of the resonant converter can provide
this if the converter is to remain active as for adapter applications.
Resonant conversion provides the following benefits:
•High power
•High efficiency
•EMI friendly
•Compact
2.2 General features
•Universal mains supply operation
•High level of integration, resulting in a low external component count and a cost
effective design
•Enable input
•On-chip high-voltage start-up source
•Stand-alone operation or IC supply from external DC supply

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Application note Rev. 1 — 28 December 2010 5 of 82
NXP Semiconductors AN10907
TEA1613T resonant power supply control IC
2.3 Resonant half-bridge controller features
•Integrated high-voltage level shifter
•Adjustable minimum and maximum frequency
•Maximum 500 kHz half-bridge switching frequency
•Adaptive non-overlap timing
•Burst mode switching
2.4 Protection features
•Safe restart mode for system fault conditions
•General latched protection input for output over-voltage protection or external
temperature protection
•Protection timer for time-out and restart
•Overtemperature protection
•Soft (re)start
•Under-voltage protection for boost (brownout), IC supply and output voltage
•Over-current regulation and protection
•Input voltage brownout
•Capacitive mode protection for resonant converter
2.5 Protection
The TEA1613T provides several protection functions that combine detection with a
response to solve the problem. By regulating the frequency as a reaction to, for example,
over-power or bad half-bridge switching, the problem can be solved or operation kept safe
until it is decided to stop and restart (timer-function).
2.6 Typical areas of application
•LCD television
•Plasma television
•High-power adapters
•Slim notebook adapters
•PC power supplies
•Office equipment

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Application note Rev. 1 — 28 December 2010 6 of 82
NXP Semiconductors AN10907
TEA1613T resonant power supply control IC
3. Pin overview with functional description
Table 1. Pinning overview
Pin Name Functional description
1 SNSOUT/PFCON Input for sensing (indirectly) the output voltage of resonant converter. Normally connected to an
auxiliary winding of HBC.
Also output signal for PFC to hold switching in order to provide synchronous burst mode
operation.
This pin has 2 functions related to internal comparators:
•Overvoltage protection: SNSOUT >3.5 V, latched
•Undervoltage protection: SNSOUT <2.3 V, protection timer
The pin also contains an internal current source of 100 mA that, initially, generates a voltage up
to 1.5 V across an external impedance (>20 krecommended). This voltage level should
enable PFC operation (PFCON). After start-up this level is higher, representing the state of the
output voltage.
During burst mode, an internal switch makes this voltage level low during the time that the HBC
is not switching.
2 SNSFB Sense input for HBC output regulation feedback by voltage.
Sinking a current from SNSFB provides the feedback-voltage on SNSFB. This current through
an internal resistor (1.5 k), internally connected to 8.4 V results in the regulation voltage.
The regulation voltage range is from 4.1 V to 6.4 V, and corresponds with the maximum and
minimum frequency that can be controlled by SNSFB. The SNSFB range is limited to 65 % of
the maximum frequency preset by RFMAX.
Open loopdetection is provided, activating the protection timer when SNSFB is (remains) above
7.7 V.
3 SNSBURST Sense input for regulation voltage to enter burst mode.
Externally connected to SNSFB by using a resistive divider.
When the voltage on SNSBURST drops below Vburst(SNSBURST) = 3.5 V, the HBC pauses its
operation. When the voltage on SNSBURST increases to above Vburst(SNSBURST) + internal
hysteresis = 3.6 V it resumes operation without a soft-start sequence. The transition level can
be chosen by the values of the resistors used.
An internal current source compensates the transition level for variations on boost voltage
(supply voltage of the converter) by using the SNSBOOST information. The total impedance of
the resistive divider determines the amount of compensation.
4 SNSBOOST Sense input for boost voltage.
Externally connected to resistor divided boost voltage.
As soon as the voltage on this pin drops below VUVP(SNSBOOST) = 1.6 V, switching of the HBC is
stopped at the moment the low-side MOSFET is on.
An internal hysteresis current source of 3 mA in combination with the resistance of the external
divider determines the start level. The boost voltage for starting is higher than the boost voltage
for stopping.

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Application note Rev. 1 — 28 December 2010 7 of 82
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TEA1613T resonant power supply control IC
5 SUPIC IC voltage supply input and output of the internal HV start-up source.
All internal circuits are directly or indirectly (via SUPREG) supplied from this pin, with the
exception of the high-voltage circuit.
The buffer capacitor on SUPIC can be charged in several ways:
•Internal high-voltage (HV) start-up source
•Auxiliary winding from HBC transformer or capacitive supply from switching half-bridge
node
•External DC supply, for example a standby supply
The IC enables operation when the SUPIC voltage has reached the start level of 22 V (for
HV start) or 17 V (for external supply). It stops operation below 15 V and a shutdown reset is
activated at 7 V.
6 PGND Power ground. Reference (ground) for HBC low-side driver.
7 SUPREG Output of the internal regulator: 10.9 V.
The supply made by this function is used by internal IC functions such as the MOSFET drivers.
It can also be used to supply an external circuit. SUPREG can provide a minimum output
current of 40 mA.
SUPREG becomes operational after SUPIC has reached its start level.
The IC starts full operation when SUPREG has reached 10.7 V.
UVP: If SUPREG drops below 10.3 V after start, the IC stops operating and the current from
SUPIC is limited to 5.4 mA, to allow recovery.
8 GATELS Gate driver output for low-side MOSFET of HBC.
9 n.c. Not connected, high-voltage spacer.
10 SUPHV High-voltage supply input for internal HV start-up source.
In a stand-alone power supply application, this pin is connected to the boost voltage. SUPIC and
SUPREG are charged with a constant current by the internal start-up source. SUPHV operates
at a voltage above 25 V.
Initially the charging current is low (1.1 mA). When the SUPIC exceeds the short-circuit
protection level of 0.65 V, the generated current increases to 5.1 mA. The source is switched off
when SUPIC reaches 22 V which initiates a start operation. During start operation the voltage
drops until an auxiliary supply takes over the supply of SUPIC. If the takeover does not take
place before SUPIC drops below 15 V, the SUPHV source is reactivated and a restart is made.
11 GATEHS Gate driver output for high-side MOSFET of HBC.
12 SUPHS High-side driver supply connected to an external bootstrap capacitor between HB and SUPHS.
The supply is obtained using an external diode between SUPREG and SUPHS.
13 HB Reference for the high-side driver GATEHS.
Input for the internal half-bridge slope detection circuit for adaptive non-overlap regulation and
capacitive mode protection, externally connected to a half-bridge node between the MOSFETs
of HBC.
14 n.c. Not connected, high-voltage spacer.
15 SNSCURHBC Sense input for the momentary current of the HBC. In case of too high voltage level (that
represents the primary current), internal comparators determine to regulate to a higher
frequency (SNSCURHBC = 0.5 V) or protect (SNSCURHBC = 1 V) by switching immediately
to maximum frequency.
Variations on protection level, caused by HBC input voltage variations, can be compensated by
additional current from SNSCURHBC. This current leads to a voltage offset across the external
series resistance which adapts the protection levels. This series resistance is normally provided
by the current measurement resistor and an extra series resistance which has a typical value of
1 k.
Table 1. Pinning overview …continued
Pin Name Functional description

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Application note Rev. 1 — 28 December 2010 8 of 82
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TEA1613T resonant power supply control IC
16 SGND Signal ground, reference for IC.
17 CFMIN Oscillator pin.
The value of the external capacitor determines the minimum switching frequency of the HBC. In
combination with the resistor value on RFMAX, it sets the operating frequency range.
To facilitate switching timing, a triangular waveform is generated on the CFMIN capacitor
Vlow(CFMIN) = 1 V and Vhigh(CFMIN) = 3 V). The minimum frequency is determined by a fixed
minimum (dis)charging current of 150 A. During special conditions, the (dis)charging current is
reduced to 30 A to temporarily slow down the charging.
An internal function limits the operating frequency to 670 kHz.
18 RFMAX Oscillator frequency pin.
The value of the resistor connected between this pin and ground, determines the frequency
range. Both the minimum and maximum frequencies of the HBC are preset. The minimum
frequency is set by CFMIN and the absolute maximum frequency is internally limited to 670 kHz.
The voltage on RFMAX and the value of the resistor connected to it, determine the variable part
(in addition to the fixed 150 A) of the (dis)charging current of the CFMIN-capacitor. The voltage
on RFMAX can vary between 0 V (minimum frequency) and 2.5 V (maximum frequency).
The RFMAX voltage (running frequency) is driven by SNSFB- and SSHBC/EN- function.
The protection timer is started when the voltage level is above 1.83 V. An error is assumed
when the HBC is operating at high frequency for a longer time.
19 SSHBC/EN Combined soft-start/protection frequency control of HBC and IC enable input (PFC or
PFC + HBC). Externally connected to a soft-start capacitor and an enable pull-down function.
This pin has 3 functions:
•Enable IC (>2.2 V)
•Frequency sweep during soft-start from 3.2 V to 8 V
•Frequency control during protections between 8 V to 3.2 V
Seven internal current sources operate the frequency control, depending on which of the
following actions is required:
•Soft-start + overcurrent protection: high/low charge (160 A/40 A) + high/low discharge
(160 A/40 A)
•Capacitive mode regulation: high/low discharge (1800 A/440 A)
•General: bias discharge (5 A)
20 RCPROT Timer presetting for time-out and restart.The timing is determined by the values of an externally
connected resistor and capacitor.
Protection timer.
During the protections listed below, the timer is activated by a 100 A charge current:
•OverCurrent Regulation OCR (SNSCURHBC)
•High Frequency Protection HFP (RFMAX)
•Open Loop Protection OLP (SNSFB)
•Undervoltage Protection UVP (SNSOUT)
When the level of 4 V is reached the protection is activated. The resistor discharges the
capacitor and at a level of 0.5 V, a restart is made.
Restart timer.
Table 1. Pinning overview …continued
Pin Name Functional description

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TEA1613T resonant power supply control IC
4. Application diagram
Fig 1. Basic application diagram TEA1613T
001aal427
TEA1613
mains
rect Boost
SupHs
TrHbc
RCurcmp
RCurHbc
CRes
CHB
CSupHs
CSupReg
CSupIc
Output
DSupHs
RProt
Rfmax
CProt
Cfmin
CSoStHbc
SNSBOOST GATEHS
HB
Hb
GATELS
SNSCURHBC
SNSOUT/
PFC ON
SNSFB
SNSBURST
CFMIN
RFMAX
RCPROT
SSHBC/EN
SUPHV SUPIC SUPREG
SupReg
PfcOnNot
CurHbc
SUPHS
SGNDPGND
Disable
RESONANT HALF-BRIDGE
CONTROLLER
POWER
FACTOR
CONTROLLER

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Application note Rev. 1 — 28 December 2010 10 of 82
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TEA1613T resonant power supply control IC
5. Block diagram
Fig 2. TEA1613T with application block diagram (part 1)
coa074
120 μA
5.6 V
2.2 V Enableplc
3.2 V
3.2 V 8.0 V
ClampEndSoftStart
SenseFbSS
40 μA
120 μA
40 μA
1360 μA
440 μA
5 μA
42 μA
FREQUENCY
CONTROL
HBC
3 A
5.8 V
SUPHV
SNSBOOST BoostUv
SPIKE FILTER
SSHBC/EN
Disable supply
Enable supply
0 V to >2 V
Boost
SUPREG
3.0 V
8.4 V
SuplcChargeLow = 1.1 mA
SuplcCharge = 5.1 mA
HV START-UP SOURCE
CONTROL
10.9 V 5.5 mA
SUPIC
SuplcShort
LatchReset
0.65 V
7 V
1.6 V 50 mV
SupReg
EnableSupReg
reduced
current
startlevel Hv = 22 V
startlevel Lv = 17 V
stoplevel = 15 V
SupRegUvStart
startlevel = 10.7 V
SupRegUvStop
stoplevel = 10.3 V
SupHvPresent CSUPREG
Protection
HBC softstart reset
0
Vfmax(SSHBC)
VSSHBC/EN
Vfmin(SSHBC)
0
fmin
fHB
fmax
t
off
on
fmax
forced fast
sweep slow sweep regulationregulation
Vss(hf-lf)(SSHBC)
014aaa864
0ISNSFB
Vopen = 8.4 V
0.66 mA
Ifmin
VRFMAX
2.2 mA
Ifmax
00
VSSHBC = 8 V
260 μA
IOLP
VOLP = 7.7 V
Vfmin = 6.4 V
Vfmax = 4.1 V
Vclamp,fmax = 3.2 V
VSNSFB
8 mA
Iclamp,max
2.5 Vtyp = Vfmax
1.5 Vtyp = 0.6 ×Vfmax
001aal040
passed
0
0
none
present
short
error long
error
PROTECTION TIMER repetative
error
Vhigh(RCPROT)
Islow(RCPROT)
IRCPROT
Error
VRCPROT
t
Protection time
001aal063
62 kΩ1 nF
9.8 MΩC
D
B
A

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Application note Rev. 1 — 28 December 2010 11 of 82
NXP Semiconductors AN10907
TEA1613T resonant power supply control IC
Fig 3. TEA1613T with application block diagram (part 2)
coa075
1.5 kΩ
RProt
340 kΩ
CProt
640 nF
TEA1613 N1A pin list:
1. SNSOUT/PFCON
2. SNSFB
3. SNSBURST
4. SNSBOOST
5. SUPIC
6. PGND
7. SUPREG
8. GATELS
9. n.c.
10. SUPHV
20. RCPROT
19. SSHBC/EN
18. RFMAX
17. CFMIN
16. SGND
15. SNSCURHBC
14. n.c.
13. HB
12. SUPHS
11. GATEHS
Output
High
Voltage
Output
Low
Voltage
Output
Vout
CCO
RFMAX
FreqHigh ProtTimer
30 μA
Fmax,limit
Rfmax Cfmin
FreqHbc
(75 % of max)
1.83 V
Slowed
down
current
CFMIN
Vhigh = 3.0 V
Vlow = 1.0 V
HBC DRIVE CONTROL Drive GateHS
Drive GateLS
Enable
Logic
SUPHS
GATEHS
Hb
HB
7.3 mA
3.2 V
6.4 V 100 mV
2.2 mA 100 μA100 μA
VOLTAGE PIN SSHBC
POLARITY INVERSION
(max 2.5 V)
VOLTAGE PIN RFMAX
HBC OSCILLATOR
CONVERSION TO CURRENT
via R
fmax
FEEDBACK CURRENT
PIN SNSFB
FIXED f
min
CURRENT
CONVERSION TO
VOLTAGE (max 1.5V)
(DIS-)CHARGE CURRENT
PIN CFMIN
CONVERSION TO
FRQUENCY via C
fmin
V
Cur(HBC)
= R
cur(HBC)
× I
Cur(HBC)
I
ocr(high)
I
ocp(high)
I
ocp(nom)
I
ocr(nom)
−I
ocr(nom)
−I
ocp(nom)
−I
ocr(high)
−I
ocp(high)
I
Cur(HBC)
I
SNSCURHBC
HBC BOOST COMPENSATION
V
reg
V
uvp
V
Boost
GATELS
GATEHS
sink current only with positive V
SNSCURHBC
sink
source
0
0
0
t
t
t
t
low V
Boost
strong compensation
high OCP
low V
Boost
strong compensation
high OCR
nominal V
Boost
no compensation
nominal OCP
nominal V
Boost
no compensation
nominal OCR
V
SNSCURHBC
t
t
V
SNSCURHBC
V
ocr(HBC)
−V
ocr(HBC)
V
ocp(HBC)
−V
ocp(HBC)
0 μA0 V 1.8 V V
SNSBOOST
I
compensation on SNSCURHBC
2.5 V =
V
regulation
170 μA
−170 μA
ADAPTIVE NON OVERLAP
LEVEL
SHIFTER
Hb
SupHs
Drive GateHS
Drive GateLS
CAPACITIVE MODE REGULATION
SLOPE
DETECTION
SlopeNeg
SlopeNegStart
SlopePos
SlopePosStart
SupHs
SupHs
Hb
GATELS
SNSOUT/PFCON PFC off
SNSFB
SupReg
1.5 V
3.5 V
hold hbc
3.5 V
2.35 V
ProtTimer
(latched) ProtSd
OutputUv
OutputOv
SNSBURST
compensation of burst
voltage level by boost voltage
HoldHbc
SnsBoost
RCPROT
Restart
Over Current Regulation HBC
High Frequency Protection HBC
Open Loop Protection SNSFB
Under Voltage Protection SNSOUT
4.0 V
0.5 V
SNSCURHBC
OperatingHbc
CurHbc
SPIKE
FILTER
SUPIC
SupReg
PGND
HB 4.5 V HB
SupReg
CSupReg
CRes2
CCurHbc
CSuplc
RCurHbc
0.23 Ω
RCurcmp
1 kΩ
CHb
CRes1
SPIKE
FILTER
SPIKE
FILTER
BOOST VOLTAGE
COMPENSATION
SnsBoost 2.5 V => 0 μA
1.7 V => 100 μA
1 V
1 V
0.5 V
0.5 V
0.4 V
8.1 V
8.4 V ProtTimer
open loop level = 7.7 V
Freq.
Control
ProtTimer
Standby
(external) supply
Θ
RESTART/
PROTECTION TIMER CONTROL
014aaa865
014aaa860
fast HB slope
V
Boost
Hb
GateLs
GateHs
0slow HB slope incomplete HB slope t
001aal033
f
HB,limit
f
max,B
V
fmax
V
RFMAX
A
curve C
fmin
R
fmax
A high high
B low low
C low too low
B
C
f
max,A
f
min,
B and C
f
min,A
0
f
HB
001aal037
500 mV
−500 mV
V
SNSCURHBC
160 μA
40 μA
−40 μA
−160 μA
I
SSHBC/EN
V
SSHBC/EN
8 V
5.6 V
3.2 V
V
Output
V
regulate
0
0
0
HBC 0CR
t
t
t
t
Fast soft-start sweep (charge and discharge) Slow soft-start sweep (charge and discharge)
001aal044
2.5
1
4
1.7
Icmp
(μA)
SnsBoost
(V)
C
D
B
A

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Application note Rev. 1 — 28 December 2010 12 of 82
NXP Semiconductors AN10907
TEA1613T resonant power supply control IC
6. Supply functions
6.1 Basic supply system overview
6.1.1 TEA1613T supplies
The main supply for the TEA1613T is SUPIC.
SUPHV can be used to charge SUPIC for starting the supply. During operation a supply
voltage is applied to SUPIC and the SUPHV source is switched off. The SUPHV source is
only switched on again at a new start-up.
The internal regulator SUPREG generates a fixed voltage of 10.9 V to supply the internal
MOSFET drivers GATELS and GATEHS. To supply GATEHS a bootstrap function with an
external diode is used to make supply SUPHS.
SUPIC and SUPREG also supply other internal TEA1613T circuits.
6.1.2 Supply monitoring and protection
The supply voltages are internally monitored for deciding when to initiate certain actions
i.e. starting, stopping or protection.
In several applications the SUPIC voltage can also be used to monitor the HBC output
voltage by protection input SNSOUT/PFCON.
Fig 4. Basic overview internal IC supplies
001aal429
TEA1613
SUPHV
22 V
start when HVsupply
enable HVsource
start when LVsupply
stop, UVP
shutdown reset
COMP
0.65 V
COMP
17 V
COMP
7 V
COMP
15 V
COMP
start
EXTERNAL
stop
10.7 V
10.9 V
COMP
GATEHS SUPHS
HB
SUPREG
SUPIC
HBC
VAUXILIARY
SNSOUT/PFCON
GATELS
10.3 V
COMP
OVP
latched
shutdown
UVP
protection
timer
3.5 V
COMP
2.35 V
COMP
1.1 mA5.1 mA
HV
STARTUP
CONTROL
VBOOST

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Application note Rev. 1 — 28 December 2010 13 of 82
NXP Semiconductors AN10907
TEA1613T resonant power supply control IC
6.2 SUPIC - the low voltage IC supply
SUPIC is the main IC supply. With the exception of the SUPHV circuit, all internal circuits
are either directly or indirectly supplied from this pin.
6.2.1 SUPIC start-up
SUPIC needs to be connected to an external buffer capacitor. This buffer capacitor can be
charged in several ways:
•Internal high-voltage (HV) start-up source
•Auxiliary supply (e.g. from a winding on the HBC transformer)
•External DC supply (e.g. from a standby supply)
The IC starts operating when the SUPIC and SUPREG voltages have reached the start
level. The start level value of SUPIC depends on the condition of the SUPHV pin.
SUPHV 25 Vmax
This is the case in a stand-alone application where SUPIC is initially charged by the HV
start-up source. The SUPIC start level is 22 V. The large difference between start level
and stop level (15 V) is used to allow discharge of the SUPIC capacitor until the auxiliary
supply can take over the IC supply.
SUPHV not connected/used
This is the case when the TEA1613T is supplied from an external DC supply. The SUPIC
start level is now 17 V. During start-up and operation the IC is continuously supplied by
the external DC supply. For this kind of application the SUPHV pin should be left open.
6.2.2 SUPIC stop, UVP and short-circuit protection
The IC stops operating when the SUPIC voltage drops below 15 V which is the
Under-Voltage Protection (UVP) of SUPIC. While in the process of stopping, the HBC
continues until the low-side MOSFET is active before stopping the HBC operation. SUPIC
has a low level detection at 0.65 V to detect a short circuit to ground. This level also
controls the current source from the SUPHV pin.
6.2.3 SUPIC current consumption
The SUPIC current consumption depends on the state of the TEA1613T.
•Disabled IC state: when the IC is disabled via the SSHBC/EN pin, the current
consumption is low at 250 A.
•SUPIC charge, SUPREG charge, thermal hold, restart and shutdown state:
During the charging of SUPIC and SUPREG before start-up, during a restart
sequence or during shutdown after activation of protection, only a small part of the IC
is active. The HBC operation is disabled. The current consumption from SUPIC in
these states is small: 400 A.
•Operating supply state: When the HBC is operational and switching, the current
consumption is larger. The MOSFET drivers are dominant in the current consumption,
especially during a soft-start of the HBC, when the switching frequency is high, but
also during normal operation (see Section 6.5.5). Initially the SUPIC current is
delivered by the stored energy in the SUPIC capacitor. During normal operation, this
is eventually taken over by the supply source on SUPIC.

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Application note Rev. 1 — 28 December 2010 14 of 82
NXP Semiconductors AN10907
TEA1613T resonant power supply control IC
6.3 SUPIC supply using HBC transformer auxiliary winding
6.3.1 Start-up by SUPHV
In a stand-alone power supply application, the IC can be started by a high voltage source
such as the rectified mains voltage. For this purpose the high voltage input SUPHV can be
connected to the boost voltage (for example a PFC output voltage).
The SUPIC and SUPREG are charged by the internal HV start-up source which delivers a
constant current from SUPHV to SUPIC. SUPHV is operational at a voltage > 25 V.
As long as the voltage at SUPIC is below the short circuit protection level (0.65 V), the
current from SUPHV is low (1.1 mA). This is to limit the dissipation in the HV start-up
source when SUPIC is shorted to ground.
During normal conditions, SUPIC quickly exceeds the protection level and the HV start-up
source switches to normal current (5.1 mA). The HV start-up source switches off when
SUPIC has reached the start level (22 V). The current consumption from SUPHV is low
(7 A) when switched off.
When SUPIC has reached the start level (22 V), SUPREG is charged. When SUPREG
reaches the level of 10.7 V, it enables operation of HBC.
The auxiliary winding supply of the HBC transformer must take over the supply of SUPIC
before it is discharged to the SUPIC undervoltage stop level (15 V).
6.3.2 Block diagram for SUPIC start-up
Fig 5. Block diagram: SUPIC and SUPREG start-up with SUPHV and auxiliary supply
001aal018
SuplcChargeLow = 1.1 mA
SuplcCharge = 5.1 mA
SuplcCharge = off
HV START-UP SOURCE
CONTROL
0.65 V
10.9 V 5.5 mA
SUPIC
SUPHV
SUPREGSupReg
EnableSupReg
VAUXILIARY
reduced
current
SuplcShort
startlevel Hv = 22 V
startlevel Lv = 17 V
stoplevel = 15 V
SupRegUvStart
startlevel = 10.7 V
SupRegUvStop
stoplevel = 10.3 V
SupHvPresent CSUPREG

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Application note Rev. 1 — 28 December 2010 15 of 82
NXP Semiconductors AN10907
TEA1613T resonant power supply control IC
6.3.3 Auxiliary winding on the HBC transformer
To obtain a supply voltage for SUPIC during operation, an auxiliary winding on the HBC
transformer can be used. As SUPIC has a wide operational voltage range (15 V to 38 V),
this is not a critical parameter.
Also note:
•For low power consumption, the voltage on SUPIC should be low.
•To use the voltage from the auxiliary winding for both the IC supply and the HBC
output voltage measurement (by SNSOUT/PFCON). The auxiliary supply must be
made accurately to represent the output voltage. To ensure good coupling, this
winding needs to be placed on the secondary (output) side.
•When mains insulation is included in the HBC transformer, it can impact the
construction of the auxiliary winding. Triple insulated wire is needed when the
auxiliary winding is placed on the mains-insulated area of the transformer
construction.
6.3.3.1 SUPIC and SNSOUT/PFCON by auxiliary winding
The SNSOUT/PFCON input provides a combination of 3 functions:
•Overvoltage protection: SNSOUT/PFCON > 3.5 V, latched
•Undervoltage protection: SNSOUT/PFCON < 2.35 V, protection timer
•During burst mode an internal switch makes this voltage level low during the time that
the HBC is not switching. This signal can be used to make a PFC burst
synchronously.
Remark: A more detailed discussion of the SNSOUT/PFCON functions can be found in
Section 9.1 “Burst mode implementation”, Section 10.3.1 “OverVoltage Protection (OVP)
output”and Section 10.3.2 “UnderVoltage Protection (UVP) output”.
Often, a circuit is used which combines SUPIC and the output voltage monitoring by
SNSOUT/PFCON, with one auxiliary winding on the HBC transformer. But an
independent construction for SUPIC and SNSOUT is also possible; for example when
SUPIC is supplied by a separate standby supply and an auxiliary winding is only used for
output voltage sensing. It is also possible not to use SNSOUT for output sensing.
SNSOUT can be used as a general purpose protection input. For more details on the
possibilities, refer to Section 10.3.3 “OVP and UVP combinations”.
Fig 6. Auxiliary winding on primary side (left) and secondary side (right)
001aal019

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Application note Rev. 1 — 28 December 2010 16 of 82
NXP Semiconductors AN10907
TEA1613T resonant power supply control IC
In case of a combined function of SUPIC and SNSOUT/PFCON by an auxiliary winding on
the HBC transformer, some issues need to be addressed to obtain a good representation
of the output voltage for SNSOUT/PFCON measurement.
The advantage of a good coupling/representation of the auxiliary winding with the output
windings is that a stable auxiliary voltage is also obtained for SUPIC. A low SUPIC voltage
value can be designed more easily for lowest power consumption.
6.3.3.2 Auxiliary supply voltage variations by output current
At high (peak) current loads, the voltage drop across the series components of the HBC
output stage (resistance and diodes) is compensated by regulation. This results in a
higher voltage on the windings at higher output currents due to the higher currents
causing a larger voltage drop across the series components. An auxiliary winding supply
shows this variation caused by the HBC output.
6.3.3.3 Voltage variations by auxiliary winding position: primary side component
Due to a less optimal position of the auxiliary winding, the voltage for SNSOUT/PFCON
and/or SUPIC can contain a certain amount of undesired primary voltage component. This
can seriously endanger the feasibility of the SNSOUT/PFCON sensing function.
To avoid a primary voltage component on the auxiliary voltage, the coupling of the
auxiliary winding with the primary winding should be as small as possible. To obtain this,
the auxiliary winding should be placed on the secondary winding(s) and as physically
remote as possible from the primary winding. See the differences in the results provided
by the comparison on a secondary side position in Figure 7.
Fig 7. Position the auxiliary winding for good output coupling
001aal020
secondary side
primary side Vaux
Vaux
Vaux.new Vaux.new
VO
VO
VO
Bad coupling Vaux
to VOat high
output current
Good coupling
Vaux.new to VOat
high output current

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Application note Rev. 1 — 28 December 2010 17 of 82
NXP Semiconductors AN10907
TEA1613T resonant power supply control IC
6.3.4 Difference between UVP on SNSOUT/PFCON and SNSCURHBC OCP/OCR
In a system that uses output voltage sensing by means of the SNSOUT/PFCON function,
there can be an overlap in functionality in an over-power or short circuit situation. In such
a situation, often both the SNSOUT/PFCON UnderVoltage Protection (UVP) and the
OverCurrent Protection/Regulation on SNSCURHBC, activates the protection timer.
There are basic differences between both functions:
•OCP/OCR monitors the power in the system by sensing the primary current in detail
•SNSOUT/PFCON monitors (indirectly) the HBC output voltage or another external
protection circuit (e.g. NTC temperature measurement)
SNSOUT/PFCON is a more general protection input while SNSCURHBC is specifically
designed for HBC operation.
In addition, SNSOUT/PFCON also offers two other functions: OVP (latched) and an
output signal for PFC bursting.
6.4 SUPIC supply by external voltage
6.4.1 Start-up
When the TEA1613T is supplied by an external DC supply, the SUPHV pin can be left
unconnected. The SUPIC start level is now 17 V.
When the SUPIC exceeds 17 V, the internal regulator is activated and charges SUPREG.
At SUPREG ³ 10.7 V, GATELS is switched on for the bootstrap function to charge SUPHS.
The TEA1613T starts the converter as soon as VBOOST reaches a preset level
(SNSBOOST ³ 1.6 V).
6.4.2 Stop
Operation of the TEA1613T can be stopped by switching off the external source for
SUPIC. As soon as the voltage level on SUPIC drops below 15 V, operation is stopped.
In case of shutdown (because of protection), this state is reset by internal logic as soon as
the SUPIC voltage drops below 7 V.
6.5 SUPREG
SUPIC has a large voltage range for easy application. But because of this, SUPIC can not
directly be used to supply the internal MOSFET drivers as they would exceed the allowed
gate voltage of many external MOSFETs.
To avoid this issue (and create a few other benefits), the TEA1613T contains an
integrated series stabilizer. The series stabilizer generates an accurate regulated voltage
on SUPREG on the external buffer capacitor.
This stabilized SUPREG voltage is used for:
•Supply of internal low-side HBC driver
•Supply of internal high-side driver via external components
•Reference voltage or supply of external circuits

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Application note Rev. 1 — 28 December 2010 18 of 82
NXP Semiconductors AN10907
TEA1613T resonant power supply control IC
The series stabilizer for SUPREG is enabled after SUPIC has been charged. In this way
optional external circuitry at SUPREG does not draw from the start-up current during the
charging of SUPIC. The capacitor on SUPIC acts as a buffer at charge of SUPREG and
start-up of the IC.
To ensure that the external MOSFETs receive sufficient gate drive, the SUPREG voltage
must first reach the Vstart(SUPREG) level before the IC starts operating, provided that the
SUPIC voltage has also reached the start level.
The SUPREG has an Under-Voltage Protection. When the SUPREG voltage drops below
the 10.3 V two actions occur:
•The IC stops operating to prevent unreliable switching due to a too low gate driver
voltage. The HBC continues until the low-side stroke is active.
•The maximum current from the internal SUPREG series stabilizer is reduced to
5.4 mA. In case of an overload at SUPREG in combination with an external DC supply
for SUPIC, this action reduces the dissipation in the series stabilizer.
It is important to realize that in principle, SUPREG can only source current.
The GATELS driver (and indirectly the GATEHS driver) is supplied by this voltage and
takes current from it during operation depending on the operating conditions. Some
change in value can be expected due to current load and temperature.
Voltage characteristics for load Voltage characteristics for temperature
Fig 8. Typical SUPREG voltage characteristics for load and temperature
SUPREG load current (mA)
0504010 20 30
001aal433
10.89
10.90
10.91
10.92
SUPREG
voltage
(V)
10.88
SUPIC = 17 V
SUPIC = 20 V
Temperature (°C)
−50 150100050
001aal021
10.85
10.90
10.80
10.95
11.00
SUPREG
voltage
(V)
10.75

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Application note Rev. 1 — 28 December 2010 19 of 82
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TEA1613T resonant power supply control IC
6.5.1 Block diagram of SUPREG regulator
6.5.2 SUPREG during start-up
SUPREG is supplied by SUPIC. SUPIC is the unregulated external power source that is
the input voltage for the internal voltage regulator that provides SUPREG.
At start-up SUPIC needs to reach a specific voltage level before SUPREG is activated:
•When start-up is by the internal HV supply, SUPREG is activated when SUPIC 22 V.
•When start-up is by an external (low voltage) supply, SUPREG is activated when
SUPIC 17 V.
6.5.3 Supply voltage for the output drivers: SUPREG
The TEA1613T has a powerful output stage for GATELS and GATEHS to drive large
MOSFETs. These internal drivers are supplied by SUPREG which provides a fixed
voltage.
It can be seen from the simplified model that current is taken from SUPREG when the
external MOSFET is switched on by charging the gate to a high voltage.
Fig 9. Block diagram of internal SUPREG regulator
001aal434
10.9 V 5.5 mA
CSUPIC
CSUPREG
SUPIC
SUPREG
EnableSupReg
SUPHV SOURCE Vaux
reduced
current
SupRegUvStart
startlevel = 10.7 V
SupRegUvStop
stoplevel = 10.3 V
Fig 10. Simplified model of MOSFET drive
001aal435
EXTERNAL
GATE CIRCUIT
SUPREG
RDS-ON
Cgs Vgs Idischarge
Icharge
RDS-ON
TEA1613

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Application note Rev. 1 — 28 December 2010 20 of 82
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TEA1613T resonant power supply control IC
The shape of the current from SUPREG at switch on is related to:
•the supply voltage for the internal driver (10.9 V)
•the characteristic of the internal driver
•the gate capacitance to be charged
•the gate threshold voltage for the MOSFET to switch on
•the external circuit to the gate
The charging of SUPHS for GATEHS is synchronized in time with GATELS but has a
different shape because of the bootstrap function.
6.5.4 Supply voltage for the output drivers: SUPHS
The high-side driver is supplied by an external bootstrap buffer capacitor. The bootstrap
capacitor is connected between the high-side reference pin HB and the high-side driver
supply input pin SUPHS. This capacitor is charged by an external diode from SUPREG
during the time that HB is low. With the use of a suitable external diode, the voltage drop
between SUPREG and SUPHS can be minimized. This is especially important when
using a MOSFET that needs a large amount of gate charge and/or when switching at high
frequencies.
Instead of using SUPREG as the power source for charging SUPHS, another supply
source can be used. In such a construction it is important to check for correct start/stop
sequences and to prevent the voltage exceeding the maximum value of HB +14 V.
Note that for each cycle, the current taken from SUPREG to charge SUPHS differs (in
time and shape) from the current taken by GATELS.
6.5.4.1 Initial charging of SUPHS
At start-up, SUPHS is charged by the bootstrap function by setting GATELS HIGH to
switch on the low-side MOSFET, keeping the HB node at low voltage. The PFC operation
is started while SUPHS is being charged. The time between start charging and start HBC
operation is normally sufficient to charge SUPHS completely.
6.5.4.2 Current load on SUPHS
The current taken from SUPHS consists of two parts:
•Internal MOSFET driver GATEHS
•Internal circuit to control GATEHS (37 A)
It can be seen from Figure 11 that the current taken by the driver GATEHS occurs at
switch on. The shape of the current from SUPHS at switch on is related to:
•the value of the supply voltage for the internal driver
•the characteristic of the internal driver
•the gate capacitance to be charged
•the gate threshold voltage for the MOSFET to switch on
•the external circuit to the gate
The voltage value of SUPHS can vary.