NXP Semiconductors BZA800AL Series User manual

DATA SHEET
Product data sheet 2002 Jan 11
DISCRETE SEMICONDUCTORS
BZA800AL series
Quadruple ESD transient voltage
suppressor
db
ook, halfpage
MBD127

2002 Jan 11 2
NXP Semiconductors Product data sheet
Quadruple ESD transient voltage
suppressor BZA800AL series
FEATURES
•ESD rating >8 kV contact discharge, according to
IEC1000-4-2
•SOT353 (SC-88A) surface mount package
•Common anode configuration.
APPLICATIONS
•Computers and peripherals
•Audio and video equipment
•Communication systems.
DESCRIPTION
Monolithictransientvoltagesuppressordiodeinafivelead
SOT353 (SC-88A) package for 4-bit wide ESD transient
suppression.
MARKING
PINNING
TYPE NUMBER MARKING CODE
BZA856AL M1
BZA862AL M2
BZA868AL M3
PIN DESCRIPTION
1cathode 1
2common anode
3cathode 2
4cathode 3
5cathode 4
handbook, halfpage
MGT580
1
5
4
32
31
4
5
2
Fig.1 Simplified outline (SOT353) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. DC working current limited by Ptot(max).
2. Device mounted on standard printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
IZworking current Tamb = 25 °C−note 1 mA
IFcontinuous forward current Tamb = 25 °C−200 mA
IFSM non-repetitive peak forward current tp= 1 ms; square pulse −4 A
Ptot total power dissipation Tamb = 25 °C; note 2; see Fig.5 −300 mW
PZSM non repetitive peak reverse power
dissipation: square pulse; tp= 1 ms; see Fig.3
BZA856AL −16 W
BZA862AL −15 W
BZA868AL −14 W
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C

2002 Jan 11 3
NXP Semiconductors Product data sheet
Quadruple ESD transient voltage
suppressor BZA800AL series
THERMAL CHARACTERISTICS
Note
1. Solder point of common anode (pin 2).
ELECTRICAL CHARACTERISTICS
Tj= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient all diodes loaded 410 K/W
Rth j-s thermal resistance from junction to solder point;
note 1 one diode loaded 200 K/W
all diodes loaded 185 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VFforward voltage IF= 200 mA − − 1.3 V
IRreverse current
BZA856AL VR= 3 V − − 1000 nA
BZA862AL VR= 4 V − − 500 nA
BZA868AL VR= 4.3 V − − 100 nA
VZworking voltage IZ= 1 mA
BZA856AL 5.32 5.6 5.88 V
BZA862AL 5.89 6.2 6.51 V
BZA868AL 6.46 6.8 7.14 V
rdif differential resistance IZ= 1 mA
BZA856AL − − 400 Ω
BZA862AL − − 300 Ω
BZA868AL − − 200 Ω
SZtemperature coefficient IZ= 1 mA
BZA856AL −0.3 −mV/K
BZA862AL −1.6 −mV/K
BZA868AL −2.2 −mV/K
Cddiode capacitance f = 1 MHz; VR= 0
BZA856AL − − 125 pF
BZA862AL − − 105 pF
BZA868AL − − 90 pF
IZSM non-repetitive peak reverse current tp= 1 ms; Tamb = 25 °C
BZA856AL − − 2.2 A
BZA862AL − − 2.1 A
BZA868AL − − 2 A

2002 Jan 11 4
NXP Semiconductors Product data sheet
Quadruple ESD transient voltage
suppressor BZA800AL series
handbook, halfpage
10
1
10−1
MLD790
10−210−11tp(ms)
IZSM
(A)
10
BZA856AL
BZA862AL
BZA868AL
Fig.2 Maximum non-repetitive peak reverse
current as a function of pulse time.
handbook, halfpage
1
10
102MLD791
10−210−11tp(ms)
PZSM
(W)
10
BZA856AL
BZA862ALBZA868AL
Fig.3 Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
PZSM = VZSM ×IZSM.
VZSM is the non-repetitive peak reverse voltage at IZSM.
handbook, halfpage
02 VR(V)
Cd
(pF)
48
120
0
40
80
6
MLD792
BZA856AL
BZA862AL
BZA868AL
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
Tj= 25 °C; f = 1 MHz.
handbook, halfpage
050 Tamb (°C)
Ptot
(mW)
100 150
400
300
100
0
200
MLD793
Fig.5 Power derating curve.

2002 Jan 11 5
NXP Semiconductors Product data sheet
Quadruple ESD transient voltage
suppressor BZA800AL series
handbook, full pagewidth
MLD794
450 Ω
50 Ω
Note 1: attenuator is only used for open
socket high voltage measurements
IEC 61000-4-2 network
CZ= 150 pF; RZ= 330 Ω
1/4 BZA800AL
RG 223/U
50 Ωcoax
RZ
CZ
ESD TESTER DIGITIZING
OSCILLOSCOPE
10×
ATTENUATOR
note 1
GND
GND
GND
unclamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
vertical scale = 100 V/div
horizontal scale = 50 ns/div
unclamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network) clamped −1 kV ESD voltage waveform (IEC 61000-4-2 network)
vertical scale = 100 V/div
horizontal scale = 50 ns/div vertical scale = 5 V/div
horizontal scale = 50 ns/div
vertical scale = 5 V/div
horizontal scale = 50 ns/div
BZA868AL
BZA862AL
BZA856AL
Fig.6 ESD clamping test set-up and waveforms.

2002 Jan 11 6
NXP Semiconductors Product data sheet
Quadruple ESD transient voltage
suppressor BZA800AL series
APPLICATION INFORMATION
Typical common anode application
A quadruple transient suppressor in a SOT353 (SC88A) package makes it possible to protect four separate lines using
only one package. A simplified example is shown in Fig 7.
handbook, full pagewidth
GND
keyboard,
terminal,
printer,
etc. I/O
BZA800AL
A
B
C
D
FUNCTIONAL
DECODER
MLD795
Fig.7 Computer interface protection.
Device placement and printed-circuit board layout
Circuit board layout is of extreme importance in the suppression of transients. The clamping voltage of the BZA800AL is
determined by the peak transient current and the rate of rise of that current(di/dt).Since parasiticinductancescan further
add to the clamping voltage (V = L di/dt) the series conductor lengths on the printed-circuit board should be kept to a
minimum. This includes the lead length of the suppression element.
In addition to minimizing conductor length the following printed-circuit board layout guidelines are recommended:
1. Place the suppression element close to the input terminals or connectors
2. Keep parallel signal paths to a minimum
3. Avoid running protection conductors in parallel with unprotected conductors
4. Minimize all printed-circuit board loop areas including power and ground loops
5. Minimize the length of the transient return path to ground
6. Avoid using shared transient return paths to a common ground point.

2002 Jan 11 7
NXP Semiconductors Product data sheet
Quadruple ESD transient voltage
suppressor BZA800AL series
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT353
wB M
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
v M
A
AB
y
0 1 2 mm
scale
c
X
132
45
Plastic surface mounted package; 5 leads SOT353
UNIT A1
max bpcD
E
(2)
e
1
HELpQywv
mm 0.1 0.30
0.20 2.2
1.8
0.25
0.10 1.35 1.15 0.65
e
1.3 2.2
2.0 0.2 0.10.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.25 0.15
A
1.1
0.8
97-02-28SC-88A

2002 Jan 11 8
NXP Semiconductors Product data sheet
Quadruple ESD transient voltage
suppressor BZA800AL series
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
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does not give any representations or warranties,
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
withoutnotice.Thisdocumentsupersedesand replacesall
information supplied prior to the publication hereof.
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use in medical, military, aircraft, space or life support
equipment, nor inapplications where failureor malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
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Applications ⎯Applicationsthat aredescribedherein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick reference data ⎯The Quick reference data is an
extract of the product data givenin the Limiting valuesand
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

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This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
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Printed in The Netherlands 613514/01/pp9 Date of release: 2002 Jan 11 Document order number: 9397 750 09173