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Special Design
Features
Rugged Build
Quality
Mechanical stren th has been a hallmark of Perreaux products since the
company first started production back in 1974. The concept behind the physical
desi n and construction is that each struc
tural member should contribute to both
ri idity and performance.
Ultra Stiff
Power Supply
The 350 incorporates a massive custom desi ned, toroidal power transformer,
employin unusually heavy au e wire that reduces copper losses to a
static shield prevents AC line borne interference from
enterin the si nal path. The power supply filter capacitors, totalin 60,000µF
(30,000µF per channel), have exceptionally low inductance and internal
resistance. They char e and dischar e in respons
e to load demand far more
rapidly than conventional stora e capacitors and are capable of deliverin the
instantaneous current required by the output sta es, providin optimum dynamic
ran e and transient response. The wirin from the power supplies to the
boards is desi ned for unimpeded transmission of the required current and
volta e and utilizes heavy au e, tinned copper wire cables. Since power supply
leads radiate at si nal frequencies, all wirin is carefully loomed to minimise
this effect.
Hybrid Class
A/AB
polar transistors used in the 350 are run in Class A mode. This avoids the
crossover notch distortion and the resultin odd-
order harmonics present, to
some de ree, in all other classes of operation. The devices used in the 350
output sta e are M OSFETs, which with hi h quiescent current circuitry, are run
in the equivalent of Class A to 10 watts. Beyond this point the output class is
technically Class AB (hence the hybrid nomenclature), but with a major
ion of M OSFET characteristics and their application in
this circuitry, result in crossover distortion so minimal that it is virtually non-
existent.
MOSFET
Output Stage
The 350 output sta e takes full advanta e of the unique qualities of M OSFET
devices and in many ways they are superior to bi-
polar transistors. A major
advanta e is their tendency to draw less current over a lar e section of the power
bandwidth as their temperature rises (Ne ative Temperature Coefficient), hence
self stabilisin thermally, whereas bi-
polar transistors draw more current as their
temperature rises (Positive Temperature Coefficient) and protection circuits
become mandatory to prevent thermal runaway and eventual self destruction.
MOSFETs have the ability to swin fully across
the amplifier’s internal DC
volta e and are therefore true "rail-to-
rail" devices. Usin MOSFETs
encoura es the hi hest performance from the balance of the internal amplifier