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Special Design
Features
Rugged Build
Qualit
Mechanical stren th has been a hallmark of Perreaux products since the
company first started producti
on back in 1974. The concept behind the physical
desi n and construction is that each structural member should contribute to both
ri idity and performance.
Ultra Stiff
Power Suppl
The 750 incorporates a massive custom desi ned, toroidal power transforme
employin unusually heavy au e wire that reduces copper losses to a
minimum. An electrostatic shield prevents AC line borne interference from
enterin the si nal path. The power supply filter capacitors, totalin 60,00
have exceptionally low inductance and internal resistance. They char e and
dischar e in response to load demand far more rapidly than conventional stora e
capacitors and are capable of deliverin the instantaneous current required by the
s, providin optimum dynamic ran e and transient response. The
wirin from the power supplies to the output boards is desi ned for unimpeded
transmission of the required current and volta e and utilizes heavy au e, tinned
copper wire cables. Since power
supply leads radiate at si nal frequencies, all
wirin is carefully loomed to minimise this effect.
H brid Class
A/AB
polar transistors used in the 750 are run in Class A mode. This avoids the
crossover notch distortion and the resultin odd-orde
some de ree, in all other classes of operation. The devices used in the 750
output sta e are M OSFETs, which with hi h quiescent current circuitry, are run
in the equivalent of Class A to 10 watts. Beyond this point the output clas
technically Class AB (hence the hybrid nomenclature), but with a major
difference. The combination of MOSFET characteristics and their application in
this circuitry, result in crossover distortion so minimal that it is virtually non-
existent.
MOSFET
Output Stage
The 750 output sta e takes full advanta e of the unique qualities of M OSFET
devices and in many ways they are superior to bi-
polar transistors. A major
advanta e is their tendency to draw less current over a lar e section of the power
dth as their temperature rises (Ne ative Temperature Coefficient), hence
self stabilisin thermally, whereas bi-
polar transistors draw more current as their
temperature rises (Positive Temperature Coefficient) and protection circuits
event thermal runaway and eventual self destruction.
MOSFETs have the ability to swin fully across the amplifier’s internal DC
volta e and are therefore true "rail-to-
rail" devices. Usin MOSFETs
encoura es the hi hest performance from the balance of th
circuitry.
Multiple
Protection
S stems
The 750 is equipped with a number of protection systems, isolated from all
si nal carryin circuits via opto-couplers, to protect both itself and ancillary
equipment.