Fairchild 2N4123 User manual

2N4123
NPN General Purpose Amplifier
2N4123
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 100 mA.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 30 V
VCBO Collector-Base Voltage 40 V
VEBO Emitter-Base Voltage 5.0 V
ICCollector Current - Continuous 200 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Characteristic Max Units
2N4123
PDTotal Device Dissipation
Derate above 25°C625
5.0 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 °C/W
CBETO-92
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2001 Fairchild Semiconductor Corporation 2N4123, Rev A

2N4123
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
V(BR)CEO Collector-Emitter Breakdown Voltage* IC= 1.0 mA, IB= 0 30 V
V(BR)CBO Collector-Base Breakdown Voltage IC= 10 µA,IE= 0 40 V
V(BR)EBO Emitter-Base Breakdown Voltage IE= 10 µA,IC= 0 5.0 V
ICBO Collector Cutoff Current VCB = 20 V, IE= 0 50 nA
IEBO EmitterCutoff Current VEB = 3.0 V, IC= 0 50 nA
ON CHARACTERISTICS*
hFE DCCurrent Gain VCE = 1.0 V, IC= 2.0 mA
VCE = 1.0 V, IC= 50 mA 50
25 150
VCE(sat) Collector-Emitter Saturation Voltage IC= 50 mA, IB= 5.0 mA 0.3 V
VBE(sat) Base-Emitter Saturation Voltage IC= 50 mA, IB= 5.0 mA 0.95 V
SMALL SIGNAL CHARACTERISTICS
Cob Output Capacitance VCB = 5.0 V, f = 100 kHz 4.0 pF
Cib Input Capacitance VEB = 0.5 V, f = 0.1 MHz 8.0 pF
hfe Small-Signal Current Gain IC= 2.0 mA, VCE = 10 V,
f = 1.0 kHz
IC= 10 mA, VCE = 20 V,
f = 100 MHz
50
2.5
200
fTCurrent Gain - Bandwidth Product IC= 10 mA, VCE = 20 V
f = 100 MHz 250 MHz
NF Noise Figure VCE = 5.0 V, IC= 100 µA,
RS= 1.0 kΩ,
BW= 10 Hz to 15.7 kHz
6.0 dB
*Pulse Test: Pulse Width ≤300 µs, Duty Cycle≤ 2.0%

2N4123
Typical Characteristics
Base-Emitter ON Voltage vs
Collector Current
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER ON VOLTAGE (V)
BE(ON)
C
V = 5V
CE
25 °C
125 °C
- 40 °C
NPN General Purpose Amplifier
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
0.1 1 10 100
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER VOLTAGE (V)
BESAT
C
β= 10
25 °C
125 °C
- 40 °C
Collector-Emitter Saturation
Voltage vs Collector Current
0.1 1 10 100
0.05
0.1
0.15
I - COLLECTOR CURRENT (mA)
V - COLLECTOR-EMITTER VOLTAGE (V)
CESAT
25 °C
C
β= 10
125 °C
- 40 °C
Collector-Cutoff Current
vs Ambient Temperature
25 50 75 100 125 150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I - COLLECTOR CURRENT (nA)
A
V = 30V
CB
CBO
°
Capacitance vs
Reverse Bias Voltage
0.1 1 10 100
1
2
3
4
5
10
REVERSE BIAS VOLTAGE (V)
CAPACITANCE (pF)
Cobo
C
ibo
f = 1.0 MHz
Typical Pulsed Current Gain
vs Collector Current
0.1 1 10 100
0
100
200
300
400
500
I - COLLECTORCURRENT (mA)
h - TYPICAL PULSED CURRENT GAIN
FE
- 40 °C
25 °C
C
V = 5V
CE
125 °C

Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P - POWER DISSIPATION (W)
D
o
SOT-223
SOT-23
TO-92
Typical Characteristics (continued)
Noise Figure vs Frequency
0.1 1 10 100
0
2
4
6
8
10
12
f - FREQUENCY (kHz)
NF - NOISE FIGURE (dB)
V = 5.0V
CE
I = 100 µA, R = 500 Ω
CS
I = 1.0 mA
R = 200Ω
C
S
I = 50 µA
R = 1.0 kΩ
C
S
I = 0.5 mA
R = 200Ω
C
S
kΩ
Noise Figure vs Source Resistance
0.1 1 10 100
0
2
4
6
8
10
12
R - SOURCE RESISTANCE ( )
NF - NOISE FIGURE (dB)
I = 100 µA
C
I = 1.0 mA
C
S
I = 50 µA
C
I = 5.0 mA
C
θ- DEGREES
0
40
60
80
100
120
140
160
20
180
Current Gain and Phase Angle
vs Frequency
1 10 100 1000
0
5
10
15
20
25
30
35
40
45
50
f - FREQUENCY (MHz)
h - CURRENT GAIN (dB)
θ
V = 40V
CE
I = 10 mA
C
hfe
fe
Turn-On Time vs Collector Current
110100
5
10
100
500
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I =
B1
C
B2 Ic
10
40V
15V
2.0V
t @V = 0V
CB
d
t @V = 3.0V
CC
r
Rise Time vs Collector Current
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t - RISE TIME (ns)
I = I =
B1
C
B2 Ic
10
T = 125°C
T = 25°C
J
V = 40V
CC
r
J
2N4123
NPN General Purpose Amplifier
(continued)

2N4123
NPN General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Storage Time vs Collector Current
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t - STORAGE TIME (ns)
I = I =
B1
C
B2 Ic
10
S
T = 125°C
T = 25°C
J
J
Fall Time vs Collector Current
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t - FALL TIME (ns)
I = I =
B1
C
B2 Ic
10
V = 40V
CC
f
T = 125°C
T = 25°C
J
J
Current Gain
0.1 1 10
10
100
500
I - COLLECTOR CURRENT (mA)
h - CURRENT GAIN
V =10 V
CE
C
fe
f = 1.0 kHz
T = 25 C
A o
Output Admittance
0.1 1 10
1
10
100
I - COLLECTOR CURRENT (mA)
h - OUTPUT ADMITTANCE ( mhos)
V = 10 V
CE
C
oe
f = 1.0 kHz
T = 25 C
A o
µ
Input Impedance
0.1 1 10
0.1
1
10
100
I - COLLECTOR CURRENT (mA)
h - INPUT IMPEDANCE (k )
V = 10 V
CE
C
ie
f = 1.0 kHz
T = 25 C
A o
Ω
Voltage Feedback Ratio
0.1 1 10
1
2
3
4
5
7
10
I - COLLECTOR CURRENT (mA)
h - VOLTAGE FEEDBACK RATIO (x10 )
V = 10 V
CE
C
re
f = 1.0 kHz
T = 25 C
A o
_4

Test Circuits
10 KΩΩ
ΩΩ
Ω
3.0V
275 ΩΩ
ΩΩ
Ω
t1
C1<<
<<
< 4.0 pF
Duty Cycle ==
==
=2%
Duty Cycle ==
==
=2%
<<
<<
< 1.0 ns
- 0.5 V
300 ns 10.6V
10 < <
< <
< t1 <<
<<
< 500 µµ
µµ
µs10.9V
- 9.1 V
<<
<<
< 1.0 ns
0
0
10 KΩΩ
ΩΩ
Ω
3.0V
275 ΩΩ
ΩΩ
Ω
C1<<
<<
< 4.0 pF
1N916
FIGURE 2: Storage and Fall Time Equivalent Test Circuit
FIGURE 1: Delay and Rise Time Equivalent Test Circuit
2N4123
NPN General Purpose Amplifier
(continued)

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not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCTSTATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILDSEMICONDUCTORRESERVES THERIGHTTO MAKE CHANGESWITHOUT FURTHER
NOTICETOANY PRODUCTSHEREIN TOIMPROVERELIABILITY,FUNCTION ORDESIGN.FAIRCHILD
DOESNOTASSUMEANY LIABILITYARISING OUTOFTHEAPPLICATIONORUSE OFANYPRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES ITCONVEYANY LICENSE UNDER ITS PATENT
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