NXP Semiconductors PMST6428 User manual

DATA SHEET
Product data sheet
Supersedes data of 1997 Jun 12
1999 Apr 22
DISCRETE SEMICONDUCTORS
PMST6428; PMST6429
NPN general purpose transistors
db
ook, halfpage
M3D187

1999 Apr 22 2
NXP Semiconductors Product data sheet
NPN general purpose transistors PMST6428; PMST6429
FEATURES
•Low current (max. 100 mA)
•Low voltage (max. 50 V).
APPLICATIONS
•General purpose switching and amplification in e.g.
telephony and professional communication equipment.
DESCRIPTION
NPN transistor in an SC-70; SOT323 plastic package.
MARKING
Note
1. ∗= - : Made in Hong Kong.
∗= t : Made in Malaysia.
PINNING
TYPE NUMBER MARKING CODE(1)
PMST6428 ∗1K
PMST6429 ∗1L
PIN DESCRIPTION
1base
2emitter
3collector
Fig.1 Simplified outline (SC-70; SOT323) and
symbol.
handbook, halfpage
2
3
1
MAM062
3
2
1
Top view
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
PMST6428 −60 V
PMST6429 −55 V
VCEO collector-emitter voltage open base
PMST6428 −50 V
PMST6429 −45 V
VEBO emitter-base voltage open collector −6 V
ICcollector current (DC) −100 mA
ICM peak collector current −200 mA
IBM peak base current −100 mA
Ptot total power dissipation Tamb ≤25 °C; note 1 −200 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C

1999 Apr 22 3
NXP Semiconductors Product data sheet
NPN general purpose transistors PMST6428; PMST6429
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb ≤25 °C unless otherwise specified.
Note
1. Pulse test: tp≤300 μs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 625 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current IE= 0; VCB = 30 V −10 nA
IE= 0; VCB = 30 V; Tj= 150 °C−10 μA
IEBO emitter cut-off current IC= 0; VEB = 5 V −10 nA
hFE DC current gain VCE = 5 V
PMST6428 IC= 0.01 mA 250 −
IC= 0.1 mA 250 650
IC= 1 mA 250 −
IC= 10 mA 250 −
DC current gain VCE = 5 V
PMST6429 IC= 0.01 mA 500 −
IC= 0.1 mA 500 1250
IC= 1 mA 500 −
IC= 10 mA 500 −
VCEsat collector-emitter saturation
voltage IC= 10 mA; IB= 0.5 mA; note 1 −200 mV
IC= 100 mA; IB= 5 mA; note 1 −600 mV
VBE base-emitter voltage IC= 1 mA; VCE = 5 V 560 660 mV
Cccollector capacitance IE= ie= 0; VCB = 10 V; f = 1 MHz −3pF
Ceemitter capacitance IC= ic= 0; VEB = 0.5 V; f = 1 MHz −12 pF
fTtransition frequency IC= 1 mA; VCE = 5 V; f = 100 MHz 100 700 MHz

1999 Apr 22 4
NXP Semiconductors Product data sheet
NPN general purpose transistors PMST6428; PMST6429
PACKAGE OUTLINE
UNIT A1
max bpcD Ee1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.1
1.1
0.8 0.4
0.3 0.25
0.10 2.2
1.8 1.35
1.15 0.65
e
1.3 2.2
2.0 0.23
0.13 0.20.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323 SC-70
w
M
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
v
M
A
AB
y
0 1 2 mm
scale
A
X
12
3
Plastic surface mounted package; 3 leads SOT32
3
97-02-28

1999 Apr 22 5
NXP Semiconductors Product data sheet
NPN general purpose transistors PMST6428; PMST6429
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
DISCLAIMERS
General ⎯Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Right to make changes ⎯NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
withoutnotice.Thisdocumentsupersedes andreplacesall
information supplied prior to the publication hereof.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications wherefailureormalfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications ⎯Applicationsthat aredescribedhereinfor
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
Terms and conditions of sale ⎯NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
No offer to sell or license ⎯Nothing in this document
maybe interpretedor construed asanoffer tosellproducts
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control ⎯This document as well as the item(s)
described herein may be subject to export control
regulations.Exportmightrequireapriorauthorizationfrom
national authorities.
Quick reference data ⎯The Quick reference data is an
extract of the product data given in the Limiting valuesand
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

NXP Semiconductors
Contact information
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Printed in The Netherlands 115002/00/03/pp6 Date of release: 1999 Apr 22 Document order number: 9397 750 05712
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