NXP Semiconductors SiGeC BFU725F User manual

SiGeC microwave NPN
transistor BFU725F
Key features
Ñ Very low noise (0.4 dB at 1.8 GHz / 0.67 dB at 5.8 GHz)
Ñ High maximum stable gain (27.8 dB at 1.8 GHz / 10 dB
at 18 GHz)
Ñ High switching frequency (fT>100 GHz / fMAX >150 GHz)
Ñ Plastic surface-mount SOT343F package
Key benefits
Ñ SiGeC process delivers high switching frequency from
a silicon-based device
Ñ Cost-effective alternative to GaAs devices
Ñ RoHS compliant
Key applications
Ñ GPS systems
Ñ DECT phones
Ñ Low noise amplifier (LNA) for microwave
communications systems
Ñ 2nd stage LNA and mixer in direct broadcast satellite (DBS)
low-noise blocks (LNBs)
Ñ Satellite radio
Ñ WLAN and CDMA applications
Ñ Low-noise microwave applications
Meet the trend towards higher frequencies. With NXP Semiconductors’ latest SiGeC microwave
NPN transistor BFU725F, you get high switching frequencies plus extremely high gain and low noise.
All this in an easy-to-use SOT343F package. It’s the ideal solution for applications up to 20 GHz.
A perfect match up to 20 GHz
The NPN microwave transistor BFU725F delivers an unbeatable
blend of high switching frequency, high gain and very low
noise. Thanks to its ultra-low noise figure, it’s perfect for your
sensitive RF receivers particularly those for high-performance
cell phones. Alternatively, with its high cut-off frequency,
it’s your ideal solution for microwave applications in the 10 GHz
to 30 GHz range, such as satellite TV receivers and automotive
collision avoidance radar.
The BFU725F get its outstanding performance from our
innovative silicon-germanium-carbon (SiGeC) BiCMOS
process. QUBiC4X was designed specifically to meet the
needs of real-life, high-frequency applications and delivers
an unrivalled fusion of high power gain and excellent dynamic
range. It combines the performance of gallium-arsenide (GaAs)
technologies with the reliability of a silicon-based process.
In addition, with the BFU725F, you don’t need a biasing IC or
negative biasing voltage. So it’s a much more cost-effective
solution than GaAs pHEMT devices.

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Date of release: October 2006
Document order number: 9397 750 15784
Printed in the Netherlands
Parameter Symbol Conditions Value
Collector-emitter breakdown
voltage
BVCEO IC= 1 mA; IB= 0 3.2 V
Maximum collector current IC(max) 40 mA
Transition frequency fTVCE = 2 V; IC= 25 mA; f = 2 GHz 68 GHz
Noise figure NF
VCE = 2 V; IC= 5 mA; f = 1.8 GHz; Γ
s= Γ opt 0.4 dB
VCE = 2 V; IC= 5 mA; f = 2.4 GHz; Γ
s= Γ opt 0.45 dB
VCE = 2 V; IC= 5 mA; f = 5.8 GHz; Γ
s= Γ opt 0.7 dB
VCE = 2 V; IC= 5 mA; f = 12 GHz; Γ
s= Γ opt 1.0 dB
Maximum stable power gain MSG / GP(max)
VCE = 2 V; IC= 25 mA; f = 1.8 GHz 26.6 dB
VCE = 2 V; IC= 25 mA; f = 2.4 GHz 25.5 dB
VCE = 2 V; IC= 25 mA; f = 12 GHz 13 dB
VCE = 2 V; IC= 25 mA; f = 5.8 GHz 17 dB
Quick reference data
Transition frequency as a function of collector current (typical values) Gain as a function of frequency (typical values)