On semiconductor Mmt05b350t3 User manual

©Semiconductor Components Industries, LLC, 2006

May, 2006 − Rev. 2 1Publication Order Number:

MMT05B350T3/D

MMT05B350T3

Preferred Devices

Product Preview

Thyristor Surge Protectors

High Voltage Bidirectional TSPD

These Thyristor Surge Protective devices (TSPD) prevent

overvoltage damage to sensitive circuits by lightning, induction and

power line crossings. They are breakover−triggered crowbar

protectors. Turn−off occurs when the surge current falls below the

holding current value.

Secondary protection applications for electronic telecom equipment

at customer premises.

Features

•High Surge Current Capability: 50 A 10 x 1000 msec, for Controlled

Temperature Environments

•The MMT05B350T3 is used to help equipment meet various

regulatory requirements including: Bellcore 1089, ITU K.20 and

K.21, IEC 950, UL 1459 and 1950 and FCC Part 68

•Bidirectional Protection in a Single Device

•Little Change of Voltage Limit with Transient Amplitude or Rate

•Freedom from Wearout Mechanisms Present in Non−Semiconductor

Devices

•Fail−Safe, Shorts When Overstressed, Preventing Continued

Unprotected Operation

•Surface Mount Technology (SMT)

•Indicates UL Recognized − File #E210057

•Pb−Free Package is Available

MAXIMUM RATINGS (TJ= 25°C unless otherwise noted)

Rating Symbol Value Unit

Off−State Voltage − Maximum VDM 300 V

Maximum Pulse Surge Short Circuit Current

Non−Repetitive Double Exponential Decay

Waveform (−25°C Initial Temperature)

(Notes 1 and 2) 2 x 10 msec

8 x 20 msec

10 x 160 msec

10 x 360 msec

10 x 560 msec

10 x 700 msec

10 x 1000 msec

IPPS1

IPPS2

IPPS3

IPPS4

IPPS5

IPPS6

IPPS7

±150

±100

±70

±50

A(pk)

Non−Repetitive Peak On−State Current

60 Hz Full Sign Wave ITSM 32 A(pk)

Maximum Non−Repetitive Rate of Change of

On−State Current Exponential Waveform, < 100 A di/dt "300 A/ms

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Allow cooling before testing second polarity.

2. Measured under pulse conditions to reduce heating.

This document contains information on a product under development. ON Semiconductor

reserves the right to change or discontinue this product without notice.

BIDIRECTIONAL TSPD

50 AMP SURGE, 350 VOLTS

Device Package Shipping†

ORDERING INFORMATION

MMT05B350T3 SMB 12 mm Tape & Ree

(2.5 K/Reel)

MT1 MT2

SMB

(No Polarity)

(Essentially JEDEC DO−214AA)

CASE 403C

(

)

MARKING DIAGRAMS

http://onsemi.com

Preferred devices are recommended choices for future use

and best overall value.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

MMT05B350T3G SMB

(Pb−Free) 12 mm Tape & Ree

(2.5 K/Reel)

A = Assembly Location

Y = Year

WW = Work Week

RPBM = Specific Device Code

G= Pb−Free Package

(Note: Microdot may be in either location)

AYWW

RPBM G

MMT05B350T3

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THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Operating Temperature Range Blocking or Conducting State TJ1 −40 to +125 °C

Overload Junction Temperature − Maximum Conducting State Only TJ2 +175 °C

Maximum Lead Temperature for Soldering Purposes 1/8″from Case for 10 Seconds TL260 °C

ELECTRICAL CHARACTERISTICS (TJ= 25°C unless otherwise noted)

Devices are bidirectional. All electrical parameters apply to forward and reverse polarities.

Characteristics Symbol Min Typ Max Unit

Breakover Voltage (Both polarities)

(dv/dt = 100 V/ms, ISC = 1.0 A, Vdc = 1000 V)

(+65°C)

V(BO) −

−−

−400

412

Breakover Voltage (Both polarities)

(f = 60 Hz, ISC = 1.0 A(rms), VOC = 1000 V(rms),

RI= 1.0 kW, t = 0.5 cycle) (Note 3)

(+65°C)

V(BO) −

−

400

412

Breakover Voltage Temperature Coefficient dV(BO)/dTJ− 0.12 − V/°C

Breakdown Voltage (I(BR) = 1.0 mA) Both polarities V(BR) − 350 − V

Off State Current (VD1 = 50 V) Both polarities

Off State Current (VD2 = VDM) Both polarities ID1

ID2 −

−−

−2.0

5.0 mA

On−State Voltage (IT= 1.0 A)

(PW ≤300 ms, Duty Cycle ≤2%) (Note 3) VT− 1.6 3.0 V

Breakover Current (f = 60 Hz, VDM = 1000 V(rms), RS= 1.0 kW)

Both polarities IBO − 475 − mA

Holding Current (Both polarities) (Note 3)

VS= 500 V; IT(Initiating Current) = "1.0 A (+65°C) IH150

130 270

−−

−mA

Critical Rate of Rise of Off−State Voltage

(Linear waveform, VD= Rated VBR, TJ= 25°C) dv/dt 2000 − − V/ms

Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)

Capacitance (f = 1.0 MHz, 2.0 Vdc, 1.0 V rms Signal) CO−

−14

27 18

30 pF

3. Measured under pulse conditions to reduce heating.

+ Current

+ Voltage

VTM V(BO)

I(BO)

ID2

ID1

VD1 VD2 V(BR)

Symbol Parameter

ID1, ID2 Off State Leakage Current

VD1, VD2 Off State Blocking Voltage

VBR Breakdown Voltage

VBO Breakover Voltage

IBO Breakover Current

IHHolding Current

VTM On State Voltage

Voltage Current Characteristic of TSPD

(Bidirectional Device)

MMT05B350T3

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VBR, BREAKDOWN VOLTAGE (VOLTS)

ID1, OFF−STATE CURRENT (mA)

Figure 1. Typical Off−State Current versus

Temperature

TEMPERATURE (°C) 14012010080600−40−60

100

1.0

0.1

0.01

Figure 2. Typical Breakdown Voltage versus

Temperature

TEMPERATURE (°C)

VD1 = 50V

0−60 140

390

380

370

360

350

340

320

400

−40 20

−20 20 40 −20 40 12010060 80

0.001

330

440

430

420

410

400

380

390

CURRENT (A)

IPP − PEAK PULSE CURRENT − %IPP

IH, Holding Current (mA)

VBO, BREAKOVER VOLTAGE (VOLTS)

Figure 3. Maximum Breakover Voltage versus

Temperature Figure 4. Typical Holding Current versus

Temperature

TEMPERATURE (°C)

−40

100

TEMPERATURE (°C)

400−60 140

TIME (sec) 10000

100010010

420

320

220

Figure 5. Exponential Decay Pulse Waveform Figure 6. Peak Surge On−State Current versus

Surge Current Duration, Sinusoidal Waveform

−40 20

−20 60 12010080

550

500

400

300

200

−20 0 20 40 60 80 100 120

TIME (ms)

100

tr= rise time to peak value

tf= decay time to half value

trtf

Peak

Value

Half Value

240

260

280

300

380

400

340

360

450

350

250

150

600

MMT05B350T3

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TELECOM

EQUIPMENT

OUTSIDE

PLANT

TIP

RING

GND

TELECOM

EQUIPMENT

OUTSIDE

PLANT

TIP

RING

GND

TELECOM

EQUIPMENT

OUTSIDE

PLANT

TIP

RING

GND

PPTC*

HEAT COIL

*Polymeric PTC (positive temperature coefficient) overcurrent protection device

MMT05B350T3

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PACKAGE DIMENSIONS

SMB

CASE 403C−01

ISSUE A

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

ǒmm

inchesǓ

SCALE 8:1

2.743

0.108

2.159

0.085

2.261

0.089

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. D DIMENSION SHALL BE MEASURED WITHIN

DIMENSION P.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.160 0.180 4.06 4.57

B0.130 0.150 3.30 3.81

C0.075 0.095 1.90 2.41

D0.077 0.083 1.96 2.11

H0.0020 0.0060 0.051 0.152

J0.006 0.012 0.15 0.30

K0.030 0.050 0.76 1.27

P0.020 REF 0.51 REF

S0.205 0.220 5.21 5.59

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal