Silicon Laboratories BGM220S Series User manual

BGM220S Wireless Gecko Bluetooth ®モジ
ュール・データシート
BGM220S は Bluetooth ネットワーク上でバッテリで駆動する
IoT 製品の性能、セキュリティ、
および信頼性の要件を満たすため
に設計・構築されたモジュールです。
EFR32BG22 SoC に基づいた BGM220S は、Bluetooth® Low Energy 接続を可能にする
と同時に、業界最高の RF 範囲と性能、機能と OTA ファームウェアのアップデート向け
に将来に対応した設計、セキュリティの強化、低消費電力を実現します。
BGM220S モジュールは、完全にアップグレード可能で堅牢なソフトウェア・スタック、
世界各国の規制認証、高度な開発およびデバッグ・ツール、および最終製品のエンジニ
アリングと開発を最小化および簡素化し、製品化までの時間を短縮するのに役立つサポ
ートを備えた、完全なソリューションです。
BGM220S は、
• アセットタグやビーコン
• ポータブル医療
• スポーツ、フィットネス、ウェルネス機器ポータブル医療
• コネクテッド ホーム
• 産業およびビルディングオートメーション
•Bluetooth メッシュ低電力ノードなど、幅広いアプリケーションを対象としています。
主な機能
•Bluetooth 5.2
• 内蔵アンテナおよび RF ピン
• 最大 6 dBm の TX 電力
•-98.6 dBm BLE RX 感度 (1 Mbps)
•32 ビット ARM Cortex-M33 コア（最高
76.8 MHz)
•512/32 kB のフラッシュ/RAM メモリ
•MCU 周辺装置の最適な選択肢
•25 本の GPIO ピン
•6 mm × 6 mm × 1.1 mm
Lowest power mode with peripheral operational:
EM4—Shutoff
EM3—StopEM2—Deep SleepEM1—SleepEM0—Active
Timers and Triggers
32-bit bus
Peripheral Reflex System
Serial
Interfaces
I/O Ports Analog I/F
USART
EUART
External
Interrupts
General
Purpose I/O
Pin Reset
Pin Wakeup
ADC
Energy
Management
Brown-Out
Detector
Voltage
Regulator
Power-On
Reset
SecurityClock Management
HF Crystal
Oscillator
LF Crystal
Oscillator
Precision LF
RC Oscillator
HF
RC Oscillator
Crypto Acceleration
Ultra LF RC
Oscillator
Core / Memory
ARM CortexTM M33 processor
with DSP extensions,
FPU and TrustZone
ETM Debug Interface RAM Memory LDMA
Controller
Flash Program
Memory
Real Time
Capture
Counter
Timer/
Counter
Low Energy
Timer
Watchdog
Timer
Protocol
Timer
True Random
Number Generator
Fast Startup
RC Oscillator
Back-Up Real
Time Counter
I2C
PDM
DC-DC
Converter
Temperature
Sensor
Radio Subsystem
RFSENSE
w/ OOK Detect
RX/TX Frontend
with Integrated PA
Frequency
Synthesizer
ARM CortexTM
M0+ Radio
Controller
CRC
BUFC RAM
FRC
DEMOD
AGC
IFADC
MOD
Crystals
Antenna
Discrete
Antenna
Matching
38.4 MHz
silabs.com | Building a more connected world. Rev. 1.1.

第1章 機能リスト
•サポートされているプロトコル
•Bluetooth Low Energy (Bluetooth 5.2)
• 方向検出
•1M、2M、LE コード化 PHY
•Bluetooth メッシュ低電力ノード
•ワイヤレス・システム・オンチップ。
•2.4 GHz 無線
• 最大 6 dBm の TX 電力
•DSP 命令と浮動小数点演算ユニットを備えた高性能 32 ビ
ット ARM Cortex-M33® による効率的な信号処理
•最大 512 kB のフラッシュ・プログラム・メモリ
•32 kB RAM のデータ・メモリ
•高度なデバッグ用エンベデッド・トレース・マクロセル
（ETM）
•高性能レシーバ
•-106.4 dBm 感度（0.1% BER、125 kbps GFSK）
•-102.3 dBm 感度（0.1% BER、500 kbps GFSK）
•-98.6 dBm 感度（0.1% BER、1 Mbps GFSK）
•-95.9 dBm 感度（0.1% BER、2 Mbps GFSK）
•低エネルギー消費
•4.2 mA の RX 電流 (1 Mbps GFSK)
•4.6 mA の TX 電流（0 dBm 出力電力）
• アクティブ・モード で 26 µA/MHz (EM0)
•1.40 μA EM2 ディープ・スリープ電流（LFXO から RTCC
を実行、フル RAM 保持）
•規制認証 1
•CE and UKCA - EU and UK
•FCC - USA
•ISED - Canada
•MIC - Japan
•KC - South Korea
•広範な動作範囲
•1.8 ～ 3.8 V
•-40～+105 °°C および-40～+85 °°C のバージョンあり
•寸法
•6 mm × 6 mm × 1.1 mm
•セキュリティ機能
•Root of Trust（信頼の基点）と安全なローダー（RTSL）を
備えたセキュア・ブート
• ハードウェア暗号化アクセラレーション（AES128/256、
SHA-1、SHA-2（最大 256 ビット）、ECC（最大 256 ビッ
ト）、ECDSA、および ECDH 対応
•NIST SP800-90 および AIS-31 に準拠する真性乱数生成器
(TRNG)
•ARM® TrustZone®
• ロック/ロック解除機能付きセキュア・デバッグ
•MCU ペリフェラルの幅広い選択肢
•AD コンバータ（ADC）
•12 ビット @ 1 Msps
•16 ビット @ 76.9 ksps
•25 本の汎用 I/O ピン（出力状態を保持して非同期割り込み
あり）
•8 チャンネル DMA コントローラ
•12 チャンネル・ペリフェラル・リフレックス・システム
（PRS）
•4 × 16 ビットのタイマ/カウンタ（3 コンペア/キャプチ
ャ/PWM チャネル）
•1 × 32 ビットのタイマ/カウンタ（3 コンペア/キャプチ
ャ/PWM チャネル）
•32 ビット・リアルタイム・カウンタ
• 波形生成用 24 ビット低エネルギー・タイマ
•1 × ウオッチドッグ・タイマ
•2×汎用同期/非同期レシーバ/トランスミッタ (UART/SPI/
SmartCard (ISO 7816)/IrDA/I2S)
•1 × 強化型汎用非同期レシーバ/トランスミッタ（EUART）
•2 × I2C インターフェイス（SMBus をサポート）
• デジタル・マイクロフォン・インターフェイス（PDM）
• 選択的 OOK モードを備えた RFSENSE
BGM220S Wireless Gecko Bluetooth ®モジュール・データシート
機能リスト
silabs.com | Building a more connected world. Rev. 1.1 | 2

2. Ordering Information
Table 2.1. Ordering Information
Ordering Code Protocol Stack
TX Power
Rating
Max CPU
Speed
Anten-
na
RF
Shield
Flash
(kB)
RAM
(kB) GPIO Temp Range
BGM220SC12WGA2 Bluetooth 5.2 0 dBm 38.4 MHz Built-in No 352 32 25 -40 to 85 °C
BGM220SC22HNA2 Bluetooth 5.2
•Direction Find-
ing Rx
6 dBm 76.8 MHz Built-in Yes 512 32 25 -40 to 105 °C
BGM220SC22WGA2 Bluetooth 5.2 6 dBm 76.8 MHz Built-in Yes 352 32 25 -40 to 85 °C
Note:
1. End-product manufacturers must verify that the module is configured to meet regulatory limits for each region in accordance with
the formal certification test reports.
2. Devices are pre-programmed with BGAPI UART DFU bootloader v1.10.2.
3. Throughout this document, the devices in the table above may be referred to by their product family name (e.g. BGM220S), by
model name (BGM220S12A for 0 dBm TX power, BGM220S22A for 6 dBm TX power), or by full ordering code.
4. LE Long Range (125 kbps and 500 kbps) PHYs are only supported on part numbers which include direction-finding capability.
5. In accordance with the Bluetooth specification, the module operates over the following frequency range: 2402 - 2480 MHz. The
module is also capable of operating in a separate custom transmit-only mode where proprietary packets are sent over the channels
2401 MHz and 2481 MHz using the same 1 Mbps GFSK modulation.
6. All devices in the table above support transmitting CTE (Constant Tone Extension) which is required in Direction Finding, but only
specific devices support CTE receive. These devices are marked with "Direction Finding Rx" in the Protocol Stack Column.
7. The SLWSTK6103A Wireless Starter Kit is available for BGM220S evaluation and development, as well as the SLWRB4312A
radio board.
BGM220S Wireless Gecko Bluetooth® Module Data Sheet
Ordering Information
silabs.com | Building a more connected world. Rev. 1.1 | 3

Table of Contents
1. Feature List ................................2
2. Ordering Information ............................3
3. System Overview ..............................6
3.1 Introduction ...............................6
3.2 EFR32BG22 SoC .............................7
3.3 Antenna ................................7
3.4 Power Supply ..............................7
4. Electrical Characteristics ...........................8
4.1 Absolute Maximum Ratings..........................8
4.2 General Operating Conditions .........................9
4.2.1 DC-DC Operating Limits .........................10
4.3 MCU Current Consumption with 3 V Supply ....................11
4.4 Radio Current Consumption with 3 V Supply ....................12
4.5 RF Transmitter General Characteristics for the 2.4 GHz Band ..............13
4.6 RF Receiver General Characteristics for the 2.4 GHz Band ...............13
4.7 RF Receiver Characteristics for Bluetooth Low Energy in the 2.4 GHz Band 1 Mbps Data Rate ...14
4.8 RF Receiver Characteristics for Bluetooth Low Energy in the 2.4 GHz Band 2 Mbps Data Rate ...15
4.9 RF Receiver Characteristics for Bluetooth Low Energy in the 2.4 GHz Band 500 kbps Data Rate ..16
4.10 RF Receiver Characteristics for Bluetooth Low Energy in the 2.4 GHz Band 125 kbps Data Rate ..17
4.11 High-Frequency Crystal ..........................18
4.12 Low Frequency Crystal Oscillator .......................18
4.13 Precision Low Frequency RC Oscillator (LFRCO) ..................19
4.14 GPIO Pins ...............................20
4.15 Microcontroller Peripherals .........................21
4.16 Typical Performance Curves .........................21
4.16.1 Antenna Typical Characteristics ......................22
5. Reference Diagrams............................ 24
5.1 Network Co-Processor (NCP) Application with UART Host ...............24
5.2 SoC Application .............................25
6. Pin Definitions ..............................26
6.1 44-Pin SiP Module Device Pinout........................26
6.2 Alternate Function Table...........................28
6.3 Analog Peripheral Connectivity ........................28
6.4 Digital Peripheral Connectivity .........................29
7. Design Guidelines ............................32
silabs.com | Building a more connected world. Rev. 1.1 | 4

7.1 Layout and Placement ...........................32
7.2 Best Design Practices ...........................35
7.3 Radio Performance vs. Carrier Board Size ....................37
7.4 Proximity to Other Materials .........................38
7.5 Proximity to Human Body ..........................38
8. Package Specifications ..........................39
8.1 Package Dimensions ............................39
8.2 Recommended PCB Land Pattern .......................41
8.3 Top Marking ...............................42
9. Soldering Recommendations ........................43
10. Tape and Reel .............................44
11. Certifications ..............................46
11.1 Regulatory Certifications ..........................46
11.1.1 Qualified Antennas...........................46
11.1.2 EU and UK - CE and UKCA........................46
11.1.3 USA - FCC .............................47
11.1.4 ISED Canada ............................49
11.1.5 Proximity to Human Body ........................52
11.1.6 Japan - MIC .............................53
11.1.7 South Korea - KC ...........................54
11.2 Standards-Based Certifications ........................54
11.2.1 Bluetooth Qualification .........................54
12. Revision History............................. 55
silabs.com | Building a more connected world. Rev. 1.1 | 5

3. System Overview
3.1 Introduction
The BGM220S module combines an energy-friendly MCU with a highly integrated radio transceiver in a SiP module with a robust, inte-
grated antenna. This section gives a short introduction to the features of the module.
The block diagram for the BGM220S module is shown in the figure below. The wireless module includes the EFR32BG22 wireless Sys-
tem on a Chip (SoC), required decoupling capacitors and inductors, 38.4 MHz crystal, RF matching circuit, and integrated antenna.
Silicon Labs
EFR32BG22
HF XTAL
38.4 MHz
Supply Decoupling
and DC-DC Support
VREGVDD
GPIO
GND
(up to 25)
RF Match
Integral
Antenna
RF_2G4
ANT_IN
ANT_OUT
IOVDD
VREG
DECOUPLE
1.8 - 3.8 V
2400 – 2483.5 MHz
or
2400 – 2483.5 MHz
External
Antenna
0 Ohm
Figure 3.1. BGM220S Block Diagram
A simplified internal schematic for the BGM220S module is shown in the figure below.
4.7µF
2.2µF
4.7µF
DVDD
RFVDD
PAVDD
VREGVDD
DECOUPLE
VREGVDD
RF2G4_IO Matching
Network
EFR32BG22
38.4 MHz
HFXTAL_I
HFXTAL_O
PAx (0-8)
PBx (0-4)
PCx (0-6)
PDx (0-3)
PA0x
PB0x
PC0x
PD0x
VREGSW
2.2µH
AVDD
IOVDDIOVDD
VREG
DECOUPLE
RF_2G4
Integral
Antenna
ANT_OUT
ANT_IN
Figure 3.2. BGM220S Module Schematic
BGM220S Wireless Gecko Bluetooth® Module Data Sheet
System Overview
silabs.com | Building a more connected world. Rev. 1.1 | 6

3.2 EFR32BG22 SoC
The EFR32BG22 SoC features a 32-bit ARM Cortex M33 core, a 2.4 GHz high-performance radio, 512 kB of flash memory, a rich set
of MCU peripherals, and various clock management and serial interfacing options. Consult the EFR32xG22 Wireless Gecko Reference
Manual and the EFR32BG22 Data Sheet for details.
3.3 Antenna
BGM220S modules include an integral antenna on board with the characteristics detailed in the tables below.
Table 3.1. Antenna Efficiency and Peak Gain (BGM220S12A)
Parameter With optimal layout Note
Efficiency -1.4 to -2.6 dB Antenna efficiency, gain and radiation pattern are highly depend-
ent on the application PCB layout and mechanical design. Refer
to 7. Design Guidelines for recommendations to achieve optimal
antenna performance.
Peak gain 1.5 dBi
Table 3.2. Antenna Efficiency and Peak Gain (BGM220S22A)
Parameter With optimal layout Note
Efficiency -1 to -2 dB Antenna efficiency, gain and radiation pattern are highly depend-
ent on the application PCB layout and mechanical design. Refer
to 7. Design Guidelines for recommendations to achieve optimal
antenna performance.
Peak gain 2.3 dBi
3.4 Power Supply
The BGM220S requires a single nominal supply level of 3.0 V to operate. All necessary decoupling and filtering components are inclu-
ded in the module, and the supply is fully regulated internally.
BGM220S Wireless Gecko Bluetooth® Module Data Sheet
System Overview
silabs.com | Building a more connected world. Rev. 1.1 | 7

4. Electrical Characteristics
All electrical parameters in all tables are specified under the following conditions, unless stated otherwise:
•Typical values are based on TA=25 °C and VREGVDD supply at 3.0 V, by production test and/or technology characterization.
• Minimum and maximum values represent the worst conditions across supply voltage, process variation, and operating temperature,
unless stated otherwise.
4.1 Absolute Maximum Ratings
Stresses beyond those listed below may cause permanent damage to the device. This is a stress rating only and functional operation of
the devices at those or any other conditions beyond those indicated in the operation listings of this specification is not implied. Exposure
to maximum rating conditions for extended periods may affect device reliability. For more information on the available quality and relia-
bility data, see the Quality and Reliability Monitor Report at http://www.silabs.com/support/quality/pages/default.aspx.
Table 4.1. Absolute Maximum Ratings
Parameter Symbol Test Condition Min Typ Max Unit
Storage temperature range TSTG -40 — +125 °C
Voltage on any supply pin VDDMAX -0.3 — 3.8 V
Junction temperature TJMAX -G grade — — +105 °C
-N grade — — +105 °C
Voltage ramp rate on any
supply pin
VDDRAMPMAX — — 1.0 V / µs
DC voltage on any GPIO pin VDIGPIN -0.3 — VIOVDD +
0.3
V
Input RF level on RF pin
RF_2G4
PRFMAX2G4 — — +10 dBm
Absolute voltage on RF pin
RF_2G4
VMAX2G4 -0.3 — VVREG +
0.3
V
Total current into VDD power
lines
IVDDMAX Source — — 200 mA
Total current into VSS
ground lines
IVSSMAX Sink — — 200 mA
Current per I/O pin IIOMAX Sink — — 50 mA
Source — — 50 mA
Current for all I/O pins IIOALLMAX Sink — — 200 mA
Source — — 200 mA
BGM220S Wireless Gecko Bluetooth® Module Data Sheet
Electrical Characteristics
silabs.com | Building a more connected world. Rev. 1.1 | 8

4.2 General Operating Conditions
This table specifies the general operating temperature range and supply voltage range for all supplies. The minimum and maximum
values of all other tables are specifed over this operating range, unless otherwise noted.
Table 4.2. General Operating Conditions
Parameter Symbol Test Condition Min Typ Max Unit
Operating ambient tempera-
ture range
TA-G temperature grade -40 — +85 °C
-N temperature grade -40 — +105 °C
IOVDDx operating supply
voltage (All IOVDD pins)
VIOVDDx 1.71 3.0 3.8 V
VREGVDD operating supply
voltage
VVREGVDD DCDC in regulation12.2 3.0 3.8 V
DCDC in bypass 1.8 3.0 3.8 V
HCLK and SYSCLK frequen-
cy
fHCLK VSCALE2, MODE = WS1 — — 76.8 MHz
VSCALE2, MODE = WS0 — — 40 MHz
PCLK frequency fPCLK VSCALE2 — — 50 MHz
VSCALE1 — — 40 MHz
EM01 Group A clock fre-
quency
fEM01GRPACLK VSCALE2 — — 76.8 MHz
VSCALE1 — — 40 MHz
EM01 Group B clock fre-
quency
fEM01GRPBCLK VSCALE2 — — 76.8 MHz
VSCALE1 — — 40 MHz
Radio HCLK frequency2fRHCLK VSCALE2 or VSCALE1 — 38.4 — MHz
Note:
1. The supported maximum VVREGVDD in regulation mode is a function of temperature and 10-year lifetime average load current.
See more details in 4.2.1 DC-DC Operating Limits.
2. The recommended radio crystal frequency is 38.4 MHz. Any crystal frequency other than 38.4 is expressly not supported.
BGM220S Wireless Gecko Bluetooth® Module Data Sheet
Electrical Characteristics
silabs.com | Building a more connected world. Rev. 1.1 | 9

4.2.1 DC-DC Operating Limits
The maximum supported voltage on the VREGVDD supply pin is limited under certain conditions. Maximum input voltage is a function
of temperature and the average load current over a 10-year lifetime. Figure 4.1 Lifetime average load current limit vs. Maximum input
voltage on page 10 shows the safe operating region under specific conditions. Exceeding this safe operating range may impact the
reliability and performance of the DC-DC converter.
The average load current for an application can typically be determined by examining the current profile during the time the device is
powered. For example, an application that is continuously powered which spends 99% of the time asleep consuming 2 µA and 1% of
the time active and consuming 10 mA has an average lifetime load current of about 102 µA.
Average Lifetime ILOAD (mA)
Maximum VVREGVDD (V)
60
5
3.3 3.8
Tj ≤ 105 °C
Figure 4.1. Lifetime average load current limit vs. Maximum input voltage
The minimum input voltage for the DC-DC in EM0/EM1 mode is a function of the maximum load current, and the peak current setting.
Figure 4.2 Transient maximum load current vs. Minimum input voltage on page 10 shows the max load current vs. input voltage for
different DC-DC peak inductor current settings.
Maximum ILOAD (mA)
Minimum VVREGVDD (V)
60
5
2.2
1.8
36
IPEAK = 150 mA
IPEAK = 90 mA
Figure 4.2. Transient maximum load current vs. Minimum input voltage
BGM220S Wireless Gecko Bluetooth® Module Data Sheet
Electrical Characteristics
silabs.com | Building a more connected world. Rev. 1.1 | 10

4.3 MCU Current Consumption with 3 V Supply
Unless otherwise indicated, typical conditions are: Module supply voltage = 3.0 V. Voltage scaling level = VSCALE1. TA = 25 °C. Mini-
mum and maximum values in this table represent the worst conditions across process variation at TA = 25 °C.
Table 4.3. MCU Current Consumption with 3 V Supply
Parameter Symbol Test Condition Min Typ Max Unit
Current consumption in EM0
mode with all peripherals dis-
abled
IACTIVE 76.8 MHz HFRCO w/ DPLL refer-
enced to 38.4 MHz crystal, CPU
running while loop from flash,
VSCALE2
— 27 — µA/MHz
76.8 MHz HFRCO w/ DPLL refer-
enced to 38.4 MHz crystal, CPU
running CoreMark loop from flash,
VSCALE2
— 37 — µA/MHz
38.4 MHz crystal, CPU running
Prime from flash
— 28 — µA/MHz
38.4 MHz crystal, CPU running
while loop from flash
— 26 — µA/MHz
38.4 MHz crystal, CPU running
CoreMark loop from flash
— 38 — µA/MHz
38 MHz HFRCO, CPU running
while loop from flash
— 22 — µA/MHz
76.8 MHz HFRCO w/ DPLL refer-
enced to 38.4 MHz crystal, CPU
running Prime from flash,
VSCALE2
— 28 — µA/MHz
Current consumption in EM1
mode with all peripherals dis-
abled
IEM1 76.8 MHz HFRCO w/ DPLL refer-
enced to 38.4 MHz crystal,
VSCALE2
— 17 — µA/MHz
38.4 MHz crystal — 17 — µA/MHz
38 MHz HFRCO — 13 — µA/MHz
Current consumption in EM2
mode, VSCALE0
IEM2_VS Full RAM retention and RTC run-
ning from LFXO
— 1.40 — µA
Full RAM retention and RTC run-
ning from LFRCO
— 1.40 — µA
Full RAM retention and RTC run-
ning from LFRCO in precision
mode
— 1.75 — µA
24 kB RAM retention and RTC
running from LFXO
— 1.32 — µA
24 kB RAM retention and RTC
running from LFRCO in precision
mode
— 1.66 — µA
8 kB RAM retention and RTC run-
ning from LFXO
— 1.21 — µA
8 kB RAM retention and RTC run-
ning from LFRCO
— 1.20 — µA
Current consumption in EM3
mode, VSCALE0
IEM3_VS 8 kB RAM retention and RTC run-
ning from ULFRCO
— 1.05 — µA
BGM220S Wireless Gecko Bluetooth® Module Data Sheet
Electrical Characteristics
silabs.com | Building a more connected world. Rev. 1.1 | 11

Parameter Symbol Test Condition Min Typ Max Unit
Current consumption in EM4
mode
IEM4 No BURTC, No LF Oscillator,
DCDC bypassed
— 0.17 — µA
Additional current in EM2 or
EM3 when any peripheral in
PD0B is enabled1
IPD0B_VS — 0.37 — µA
Note:
1. Extra current consumed by power domain. Does not include current associated with the enabled peripherals. See for a list of the
peripherals in each power domain.
4.4 Radio Current Consumption with 3 V Supply
RF current consumption measured with MCU in EM1, HCLK = 38.4 MHz, and all MCU peripherals disabled. Unless otherwise indica-
ted, typical conditions are: VREGVDD = 3.0 V. TA = 25 °C. Minimum and maximum values in this table represent the worst conditions
across process variation at TA = 25 °C.
Table 4.4. Radio Current Consumption with 3 V Supply
Parameter Symbol Test Condition Min Typ Max Unit
System current consumption
in receive mode, active pack-
et reception
IRX_ACTIVE 125 kbit/s, 2GFSK, f = 2.4 GHz,
Bluetooth stack running
— 4.2 — mA
500 kbit/s, 2GFSK, f = 2.4 GHz,
Bluetooth stack running
— 4.3 — mA
1 Mbit/s, 2GFSK, f = 2.4 GHz,
Bluetooth stack running
— 4.2 — mA
2 Mbit/s, 2GFSK, f = 2.4 GHz,
Bluetooth stack running
— 4.8 — mA
System current consumption
in receive mode, listening for
packet
IRX_LISTEN 125 kbit/s, 2GFSK, f = 2.4 GHz,
Bluetooth stack running
— 4.3 — mA
500 kbit/s, 2GFSK, f = 2.4 GHz,
Bluetooth stack running
— 4.3 — mA
1 Mbit/s, 2GFSK, f = 2.4 GHz,
Bluetooth stack running
— 4.2 — mA
2 Mbit/s, 2GFSK, f = 2.4 GHz,
Bluetooth stack running
— 4.7 — mA
System current consumption
in transmit mode
ITX f = 2.4 GHz, CW, 0 dBm output
power
— 4.6 — mA
f = 2.4 GHz, CW, 6 dBm output
power
— 8.8 — mA
BGM220S Wireless Gecko Bluetooth® Module Data Sheet
Electrical Characteristics
silabs.com | Building a more connected world. Rev. 1.1 | 12

4.5 RF Transmitter General Characteristics for the 2.4 GHz Band
Unless otherwise indicated, typical conditions are: TA = 25 °C, VREGVDD = 3.0V. RF center frequency 2.45 GHz.
Table 4.5. RF Transmitter General Characteristics for the 2.4 GHz Band
Parameter Symbol Test Condition Min Typ Max Unit
RF tuning frequency range FRANGE 2400 — 2483.5 MHz
Maximum TX power1POUTMAX 6 dBm output power — 6.0 — dBm
0 dBm output power — -0.5 — dBm
Minimum active TX Power POUTMIN — -27 — dBm
Output power variation vs
VREGVDD supply voltage
variation, frequency = 2450
MHz
POUTVAR_V 6 dBm output power with
VREGVDD voltage swept from
1.8 V to 3.0 V
— 0.04 — dB
0 dBm output power, with
VREGVDD voltage swept from
1.8 to 3.0 V
— 0.04 — dB
Output power variation vs
temperature, Frequency =
2450 MHz
POUTVAR_T 6 dBm output power, (-40 to +105
°C)
— 0.2 — dB
0 dBm output power, (-40 to +105
°C)
— 1.3 — dB
6 dBm output power, (-40 to +85
°C)
— 0.1 — dB
0 dBm output power, (-40 to +85
°C)
— 1.0 — dB
Output power variation vs RF
frequency
POUTVAR_F 6 dBm output power — 0.09 — dB
0 dBm output power — 0.15 — dB
Note:
1. Supported transmit power levels are determined by the ordering part number (OPN). Transmit power ratings for all devices cov-
ered in this data sheet can be found in the Max TX Power column of the Ordering Information Table.
4.6 RF Receiver General Characteristics for the 2.4 GHz Band
Unless otherwise indicated, typical conditions are: TA = 25 °C, VREGVDD = 3.0V. RF center frequency 2.45 GHz.
Table 4.6. RF Receiver General Characteristics for the 2.4 GHz Band
Parameter Symbol Test Condition Min Typ Max Unit
RF tuning frequency range FRANGE 2400 — 2483.5 MHz
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Electrical Characteristics
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4.7 RF Receiver Characteristics for Bluetooth Low Energy in the 2.4 GHz Band 1 Mbps Data Rate
Unless otherwise indicated, typical conditions are: TA = 25 °C, VREGVDD = 3.0V. RF center frequency 2.45 GHz.
Table 4.7. RF Receiver Characteristics for Bluetooth Low Energy in the 2.4 GHz Band 1 Mbps Data Rate
Parameter Symbol Test Condition Min Typ Max Unit
Max usable receiver input
level
SAT Signal is reference signal1— 10 — dBm
Sensitivity SENS Signal is reference signal, 37 byte
payload2
— -98.6 — dBm
Signal is reference signal, 255
byte payload1
— -97.2 — dBm
With non-ideal signals3 1— -96.6 — dBm
Signal to co-channel interfer-
er
C/ICC (see notes)1 4— 8.7 — dB
N ± 1 Adjacent channel se-
lectivity
C/I1Interferer is reference signal at +1
MHz offset1 5 4 6
— -6.6 — dB
Interferer is reference signal at -1
MHz offset1 5 4 6
— -6.5 — dB
N ± 2 Alternate channel se-
lectivity
C/I2Interferer is reference signal at +2
MHz offset1 5 4 6
— -40.9 — dB
Interferer is reference signal at -2
MHz offset1 5 4 6
— -39.9 — dB
N ± 3 Alternate channel se-
lectivity
C/I3Interferer is reference signal at +3
MHz offset1 5 4 6
— -45.9 — dB
Interferer is reference signal at -3
MHz offset1 5 4 6
— -46.2 — dB
Selectivity to image frequen-
cy
C/IIM Interferer is reference signal at im-
age frequency with 1 MHz preci-
sion1 6
— -23.5 — dB
Selectivity to image frequen-
cy ± 1 MHz
C/IIM_1 Interferer is reference signal at im-
age frequency +1 MHz with 1
MHz precision1 6
— -40.9 — dB
Interferer is reference signal at im-
age frequency -1 MHz with 1 MHz
precision1 6
— -6.6 — dB
Intermodulation performance IM n = 3 (see note7)— -17.1 — dBm
Note:
1. 0.017% Bit Error Rate.
2. 0.1% Bit Error Rate.
3. With non-ideal signals as specified in Bluetooth Test Specification RF-PHY.TS.5.0.1 section 4.7.1
4. Desired signal -67 dBm.
5. Measured frequency is 2401 MHz ≤ Fc ≤ 2481 MHz.
6. With allowed exceptions.
7. As specified in Bluetooth Core specification version 5.1, Vol 6, Part A, Section 4.4
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4.8 RF Receiver Characteristics for Bluetooth Low Energy in the 2.4 GHz Band 2 Mbps Data Rate
Unless otherwise indicated, typical conditions are: TA = 25 °C, VREGVDD = 3.0V. RF center frequency 2.45 GHz.
Table 4.8. RF Receiver Characteristics for Bluetooth Low Energy in the 2.4 GHz Band 2 Mbps Data Rate
Parameter Symbol Test Condition Min Typ Max Unit
Max usable receiver input
level
SAT Signal is reference signal1— 10 — dBm
Sensitivity SENS Signal is reference signal, 37 byte
payload2
— -95.9 — dBm
Signal is reference signal, 255
byte payload1
— -94.3 — dBm
With non-ideal signals3 1— -94.0 — dBm
Signal to co-channel interfer-
er
C/ICC (see notes)1 4— 8.8 — dB
N ± 1 Adjacent channel se-
lectivity
C/I1Interferer is reference signal at +2
MHz offset1 5 4 6
— -9.2 — dB
Interferer is reference signal at -2
MHz offset1 5 4 6
— -6.6 — dB
N ± 2 Alternate channel se-
lectivity
C/I2Interferer is reference signal at +4
MHz offset1 5 4 6
— -43.3 — dB
Interferer is reference signal at -4
MHz offset1 5 4 6
— -44.0 — dB
N ± 3 Alternate channel se-
lectivity
C/I3Interferer is reference signal at +6
MHz offset1 5 4 6
— -48.6 — dB
Interferer is reference signal at -6
MHz offset1 5 4 6
— -50.7 — dB
Selectivity to image frequen-
cy
C/IIM Interferer is reference signal at im-
age frequency with 1 MHz preci-
sion1 6
— -23.8 — dB
Selectivity to image frequen-
cy ± 2 MHz
C/IIM_1 Interferer is reference signal at im-
age frequency +2 MHz with 1
MHz precision1 6
— -43.3 — dB
Interferer is reference signal at im-
age frequency -2 MHz with 1 MHz
precision1 6
— -9.2 — dB
Intermodulation performance IM n = 3 (see note7)— -18.8 — dBm
Note:
1. 0.017% Bit Error Rate.
2. 0.1% Bit Error Rate.
3. With non-ideal signals as specified in Bluetooth Test Specification RF-PHY.TS.5.0.1 section 4.7.1
4. Desired signal -64 dBm.
5. Measured frequency is 2401 MHz ≤ Fc ≤ 2481 MHz.
6. With allowed exceptions.
7. As specified in Bluetooth Core specification version 5.1, Vol 6, Part A, Section 4.4
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4.9 RF Receiver Characteristics for Bluetooth Low Energy in the 2.4 GHz Band 500 kbps Data Rate
Unless otherwise indicated, typical conditions are: TA = 25 °C, VREGVDD = 3.0V. RF center frequency 2.45 GHz.
Table 4.9. RF Receiver Characteristics for Bluetooth Low Energy in the 2.4 GHz Band 500 kbps Data Rate
Parameter Symbol Test Condition Min Typ Max Unit
Max usable receiver input
level
SAT Signal is reference signal1— 10 — dBm
Sensitivity SENS Signal is reference signal, 37 byte
payload2
— -102.3 — dBm
Signal is reference signal, 255
byte payload1
— -100.9 — dBm
With non-ideal signals3 1— -99.8 — dBm
Signal to co-channel interfer-
er
C/ICC (see notes)1 4— 2.7 — dB
N ± 1 Adjacent channel se-
lectivity
C/I1Interferer is reference signal at +1
MHz offset1 5 4 6
— -8.0 — dB
Interferer is reference signal at -1
MHz offset1 5 4 6
— -7.9 — dB
N ± 2 Alternate channel se-
lectivity
C/I2Interferer is reference signal at +2
MHz offset1 5 4 6
— -46.5 — dB
Interferer is reference signal at -2
MHz offset1 5 4 6
— -49.9 — dB
N ± 3 Alternate channel se-
lectivity
C/I3Interferer is reference signal at +3
MHz offset1 5 4 6
— -48.9 — dB
Interferer is reference signal at -3
MHz offset1 5 4 6
— -53.8 — dB
Selectivity to image frequen-
cy
C/IIM Interferer is reference signal at im-
age frequency with 1 MHz preci-
sion1 6
— -48.3 — dB
Selectivity to image frequen-
cy ± 1 MHz
C/IIM_1 Interferer is reference signal at im-
age frequency +1 MHz with 1
MHz precision1 6
— -49.9 — dB
Interferer is reference signal at im-
age frequency -1 MHz with 1 MHz
precision1 6
— -46.5 — dB
Note:
1. 0.017% Bit Error Rate.
2. 0.1% Bit Error Rate.
3. With non-ideal signals as specified in Bluetooth Test Specification RF-PHY.TS.5.0.1 section 4.7.1
4. Desired signal -72 dBm.
5. Measured frequency is 2401 MHz ≤ Fc ≤ 2481 MHz.
6. With allowed exceptions.
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4.10 RF Receiver Characteristics for Bluetooth Low Energy in the 2.4 GHz Band 125 kbps Data Rate
Unless otherwise indicated, typical conditions are: TA = 25 °C, VREGVDD = 3.0V. RF center frequency 2.45 GHz.
Table 4.10. RF Receiver Characteristics for Bluetooth Low Energy in the 2.4 GHz Band 125 kbps Data Rate
Parameter Symbol Test Condition Min Typ Max Unit
Max usable receiver input
level
SAT Signal is reference signal1— 10 — dBm
Sensitivity SENS Signal is reference signal, 37 byte
payload2
— -106.4 — dBm
Signal is reference signal, 255
byte payload1
— -106.0 — dBm
With non-ideal signals3 1— -105.6 — dBm
Signal to co-channel interfer-
er
C/ICC (see notes)1 4— 0.9 — dB
N ± 1 Adjacent channel se-
lectivity
C/I1Interferer is reference signal at +1
MHz offset1 5 4 6
— -13.6 — dB
Interferer is reference signal at -1
MHz offset1 5 4 6
— -13.4 — dB
N ± 2 Alternate channel se-
lectivity
C/I2Interferer is reference signal at +2
MHz offset1 5 4 6
— -52.6 — dB
Interferer is reference signal at -2
MHz offset1 5 4 6
— -55.8 — dB
N ± 3 Alternate channel se-
lectivity
C/I3Interferer is reference signal at +3
MHz offset1 5 4 6
— -53.7 — dB
Interferer is reference signal at -3
MHz offset1 5 4 6
— -59.0 — dB
Selectivity to image frequen-
cy
C/IIM Interferer is reference signal at im-
age frequency with 1 MHz preci-
sion1 6
— -52.7 — dB
Selectivity to image frequen-
cy ± 1 MHz
C/IIM_1 Interferer is reference signal at im-
age frequency +1 MHz with 1
MHz precision1 6
— -53.7 — dB
Interferer is reference signal at im-
age frequency -1 MHz with 1 MHz
precision1 6
— -52.6 — dB
Note:
1. 0.017% Bit Error Rate.
2. 0.1% Bit Error Rate.
3. With non-ideal signals as specified in Bluetooth Test Specification RF-PHY.TS.5.0.1 section 4.7.1
4. Desired signal -79 dBm.
5. Measured frequency is 2401 MHz ≤ Fc ≤ 2481 MHz.
6. With allowed exceptions.
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4.11 High-Frequency Crystal
Table 4.11. High-Frequency Crystal
Parameter Symbol Test Condition Min Typ Max Unit
Crystal frequency fHFXTAL — 38.4 — MHz
Initial calibrated accuracy ACCHFXTAL -10 — 10 ppm
Temperature drift DRIFTHFXTAL Across specified temperature
range
-20 — 20 ppm
4.12 Low Frequency Crystal Oscillator
Table 4.12. Low Frequency Crystal Oscillator
Parameter Symbol Test Condition Min Typ Max Unit
Crystal Frequency FLFXO — 32.768 — kHz
Supported Crystal equivalent
series resistance (ESR)
ESRLFXO GAIN = 0 — — 80 kΩ
GAIN = 1 to 3 — — 100 kΩ
Supported range of crystal
load capacitance 1
CLFXO_CL GAIN = 0 4 — 6 pF
GAIN = 1 6 — 10 pF
GAIN = 2 (see note2)10 — 12.5 pF
GAIN = 3 (see note2)12.5 — 18 pF
Current consumption ICL12p5 ESR = 70 kOhm, CL = 12.5 pF,
GAIN3 = 2, AGC4 = 1
— 357 — nA
Startup Time TSTARTUP ESR = 70 kOhm, CL = 7 pF,
GAIN3 = 1, AGC4 = 1
— 63 — ms
On-chip tuning cap step size SSLFXO — 0.26 — pF
On-chip tuning capacitor val-
ue at minimum setting5
CLFXO_MIN CAPTUNE = 0 — 4 — pF
On-chip tuning capacitor val-
ue at maximum setting5
CLFXO_MAX CAPTUNE = 0x4F — 24.5 — pF
Note:
1. Total load capacitance seen by the crystal
2. Crystals with a load capacitance of greater than 12 pF require external load capacitors.
3. In LFXO_CAL Register
4. In LFXO_CFG Register
5. The effective load capacitance seen by the crystal will be CLFXO/2. This is because each XTAL pin has a tuning cap and the two
caps will be seen in series by the crystal
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4.13 Precision Low Frequency RC Oscillator (LFRCO)
Table 4.13. Precision Low Frequency RC Oscillator (LFRCO)
Parameter Symbol Test Condition Min Typ Max Unit
Nominal oscillation frequen-
cy
FLFRCO — 32.768 — kHz
Frequency accuracy FLFRCO_ACC Normal mode -3 — 3 %
Precision mode1, across operat-
ing temperature range2
-500 — 500 ppm
Startup time tSTARTUP Normal mode — 204 — µs
Precision mode1— 11.7 — ms
Current consumption ILFRCO Normal mode — 175 — nA
Precision mode1, T = stable at 25
°C 3
— 655 — nA
Note:
1. The LFRCO operates in high-precision mode when CFG_HIGHPRECEN is set to 1. High-precision mode is not available in EM4.
2. Includes ± 40 ppm frequency tolerance of the HFXO crystal.
3. Includes periodic re-calibration against HFXO crystal oscillator.
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4.14 GPIO Pins
Unless otherwise indicated, typical conditions are: IOVDD = 3.0 V.
Table 4.14. GPIO Pins
Parameter Symbol Test Condition Min Typ Max Unit
Leakage current ILEAK_IO MODEx = DISABLED, IOVDD =
1.71 V
— 1.9 — nA
MODEx = DISABLED, IOVDD =
3.0 V
— 2.5 — nA
Input low voltage1VIL Any GPIO pin — — 0.3*IOVDD V
RESETn — — 0.3*DVDD V
Input high voltage1VIH Any GPIO pin 0.7*IOVDD — — V
RESETn 0.7*DVDD — — V
Hysteresis of input voltage VHYS Any GPIO pin 0.05*IOVD
D
— — V
RESETn 0.05*DVDD — — V
Output high voltage VOH Sourcing 20mA, IOVDD = 3.0 V 0.8 *
IOVDD
— — V
Sourcing 8mA, IOVDD = 1.71 V 0.6 *
IOVDD
— — V
Output low voltage VOL Sinking 20mA, IOVDD = 3.0 V — — 0.2 *
IOVDD
V
Sinking 8mA, IOVDD = 1.71 V — — 0.4 *
IOVDD
V
GPIO rise time TGPIO_RISE IOVDD = 3.0 V, Cload = 50pF,
SLEWRATE = 4, 10% to 90%
— 8.4 — ns
IOVDD = 1.71 V, Cload = 50pF,
SLEWRATE = 4, 10% to 90%
— 13 — ns
GPIO fall time TGPIO_FALL IOVDD = 3.0 V, Cload = 50pF,
SLEWRATE = 4, 90% to 10%
— 7.1 — ns
IOVDD = 1.71 V, Cload = 50pF,
SLEWRATE = 4, 90% to 10%
— 11.9 — ns
Pull up/down resistance2RPULL Any GPIO pin. Pull-up to IOVDD:
MODEn = DISABLE DOUT=1.
Pull-down to VSS: MODEn =
WIREDORPULLDOWN DOUT =
0.
35 44 55 kΩ
RESETn pin. Pull-up to DVDD 35 44 55 kΩ
Maximum filtered glitch width TGF MODE = INPUT, DOUT = 1 — 27 — ns
RESETn low time to ensure
pin reset
TRESET 100 — — ns
Note:
1. GPIO input thresholds are proportional to the IOVDD pin. RESETn input thresholds are proportional to DVDD.
2. GPIO pull-ups connect to IOVDD supply, pull-downs connect to VSS. RESETn pull-up connects to DVDD.
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Electrical Characteristics
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