Dallas DS80C390 User manual

1 of 54 REV: 022305
Note: Some revisions of this device may incorporate deviations from published specifications known as errata. Multiple revisions of any device
may be simultaneously available through various sales channels. For information about device errata, click here: www.maxim-ic.com/errata.
GENERAL DESCRIPTION
The DS80C390 is a fast 8051-compatible
microprocessor with dual CAN 2.0B controllers. The
redesigned processor core executes 8051
instructions up to 3X faster than the original for the
same crystal speed. The DS80C390 supports a
maximum crystal speed of 40MHz, resulting in
apparent execution speeds of 100MHz
(approximately 2.5X). An optional internal frequency
multiplier allows the microprocessor to operate at full
speed with a reduced crystal frequency, reducing
EMI. A hardware math accelerator further increases
the speed of 32-bit and 16-bit multiply and divide
operations as well as high-speed shift, normalization,
and accumulate functions.
The High-Speed Microcontroller User’s Guide and High-Speed
Microcontroller User’s Guide: DS80C390 Supplement must be
used in conjunction with this data sheet. Download both at:
www.maxim-ic.com/microcontrollers.
APPLICATIONS
Industrial Controls Agricultural Equipment
Factory Automation Gaming Equipment
Medical Equipment
Automotive
Heating, Ventilation, and
Air Conditioning
FEATURES
§ 80C52 Compatible
§ High-Speed Architecture
§ 4kB Internal SRAM Usable as Program/
Data/Stack Memory
§ Enhanced Memory Architecture
§ Two Full-Function CAN 2.0B Controllers
§ Two Full-Duplex Hardware Serial Ports
§ Programmable IrDA Clock
§ High Integration Controller
§ 16 Interrupt Sources with Six External
§ Available in 64-Pin LQFP, 68-Pin PLCC
See page 29 for a complete list of features.
ORDERING INFORMATION
PART TEMP RANGE
MAX
CLOCK
SPEED
(MHz)
PIN-
PACKAGE
DS80C390-QCR 0°C to +70°C 40 68 PLCC
DS80C390-QNR -40°C to +85°C 40 68 PLCC
DS80C390-FCR 0°C to +70°C 40 64 LQFP
DS80C390-FNR -40°C to +85°C 40 64 LQFP
PIN CONFIGURATIONS
DS80C390
Dual CAN High-Speed Microprocesso
r
www.maxim-ic.com
1
61
9
10
26
27
43
60
44
Dallas Semiconductor
DS80C390
PLCC
49
Dallas Semiconductor
DS80C390
48 33
32
17
161
64
LQFP
TOP VIEW

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ABSOLUTE MAXIMUM RATINGS
Voltage Range on Any Pin Relative to Ground……………………………………………………….-0.3V to (VCC + 0.5V)
Voltage Range on VCC Relative to Ground……………………………………………………………………-0.3V to +6.0V
Operating Temperature Range………………………………………………………………………………..-40°C to +85°C
Storage Temperature Range………………………………………………………………………………...-55°C to +125°C
Soldering Temperature…..……………………………………………………………………..See IPC/JEDEC J-STD-020
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only,
and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is
not implied. Exposure to the absolute maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS (Note 10)
PARAMETER SYMBOL MIN TYP MAX UNITS
Supply Voltage VCC V
RST 5.0 5.5 V
Power-Fail Warning VPFW 4.10 4.38 4.60 V
Minimum Operating Voltage VRST 3.85 4.13 4.35 V
Supply Current, Active Mode (Note 1) ICC 80 150 mA
Supply Current, Idle Mode (Note 2) IIDLE 40 75 mA
Supply Current, Stop Mode (Note 3) ISTOP 1 120
mA
Supply Current, Stop Mode, Bandgap Enabled (Note 3) ISPBG 150 350
mA
Input Low Level VIL -0.5 +0.8 V
Input High Level VIH 2.0 VCC +0.5 V
Input High Level for XTAL1, RST VIH2 0.7 x VCC V
CC +0.5 V
Output Low Voltage for Port 1, 3, 4, 5 at IOL = 1.6mA VOL1 0.45 V
Output Low Voltage for Port 0, 1, 2, 4, 5, RD, WR, RSTOL, PSEN,
and ALE at IOL = 3.2mA (Note 5) VOL2 0.45 V
Output High Voltage for Port 1, 3, 4, 5 at IOH = -50mA (Note 4) VOH1 2.4 V
Output High Voltage for Port 1, 3, 4, 5 at IOH = -1.5mA (Note 6) VOH2 2.4 V
Output High Voltage for Port 0, 1, 2, 4, 5, RD, WR, RSTOL, PSEN,
and ALE at IOH = -8mA (Note 5, 7) VOH3 2.4 V
Input Low Current for Port 1, 3, 4, 5 at 0.45V (Note 8) IIL -55
mA
Logic 1 to 0 Transition Current for Port 1, 3, 4, 5 (Note 9) IT1 -650
mA
Input Leakage Current for Port 0 (Input Mode Only) IL-300 +300
mA
RST Pulldown Resistance RRST 50 170
kW
Note 1: Active current measured with 40MHz clock source on XTAL1, VCC = RST = 5.5V, all other pins disconnected.
Note 2: Idle mode current measured with 40MHz clock source on XTAL1, VCC= 5.5V, RST = EA = VSS, all other pins disconnected.
Note 3: Stop mode current measured with XTAL1 = RST = EA = VSS, VCC = 5.5V, all other pins disconnected.
Note 4: RST = VCC. This condition mimics operation of pins in I/O mode.
Note 5: Applies to port pins when they are used to address external memory or as CAN interface signals.
Note 6: This measurement reflects the port during a 0-to-1 transition in I/O mode. During this period a one-shot circuit drives the ports hard
for two clock cycles. If a port 4 or 5 pin is functioning in memory mode with pin state of 0 and the SFR bit contains a 1, changing
the pin to an I/O mode (by writing to P4CNT) will not enable the 2-cycle strong pullup. During Stop or Idle mode the pins switch to
I/O mode, and so port 2 and port 1 (in nonmultiplexed mode) will not exhibit the 2-cycle strong pullup when entering Stop or Idle
mode.
Note 7: Port 3 pins 3.6 and 3.7 have a stronger than normal pullup drive for one oscillator period following the transition of either the RD or
WR from a 0-to-1 transition.
Note 8: This is the current required from an external circuit to hold a logic low level on an I/O pin while the corresponding port latch bit is
set to 1. This is only the current required to hold the low level; transitions from 1 to 0 on an I/O pin also have to overcome the
transition current.
Note 9: Ports 1(in I/O mode), 3, 4, and 5 source transition current when being pulled down externally. It reaches its maximum at
approximately 2V.
Note 10: Specifications to -40°C are guaranteed by design and not production tested.

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AC ELECTRICAL CHARACTERISTICS—(MULTIPLEXED ADDRESS/DATA BUS)
(Note 10, Note 11)
40MHz VARIABLE CLOCK
PARAMETER SYMBOL CONDITIONS
MIN MAX MIN MAX UNITS
External oscillator 0 40 0 40
Oscillator Frequency 1 / tCLCL External crystal 1 40 1 40 MHz
ALE Pulse Width tLHLL 0.375 tMCS
- 5 ns
Port 0 Instruction Address or CE0–4
Valid to ALE Low tAVLL 0.125 tMCS - 5 ns
Address Hold After ALE Low tLLAX1 0.125 tMCS - 5 ns
ALE Low to Valid Instruction In tLLIV 0.625 tMCS - 20 ns
ALE Low to PSEN Low tLLPL 0.125 tMCS - 5 ns
PSEN Pulse Width tPLPH 0.5 tMCS - 8 ns
PSEN Low to Valid Instruction In tPLIV 0.5 tMCS - 20 ns
Input Instruction Hold After PSEN tPXIX 0 0 ns
Input Instruction Float After PSEN tPXIZ 0.25 tMCS - 5 ns
Port 0 Address to Valid Instruction In tAVIV1 0.75 tMCS - 22 ns
Port 2, 4 Address to Valid Instruction
In tAVIV2 0.875 tMCS - 30 ns
PSEN Low to Address Float tPLAZ 0 0 ns
Note 11:
All parameters apply to both commercial and industrial temperature operation unless otherwise noted. The value tMCS is a function
of the machine cycle clock in terms of the processor’s input clock frequency. These relationships are described in the Stretch Value
Timing table. All signals characterized with load capacitance of 80pF except Port 0, ALE, PSEN, RD, and WR with 100pF.
Interfacing to memory devices with float times (turn off times) over 25ns can cause bus contention. This does not damage the
parts, but causes an increase in operating current. Specifications assume a 50% duty cycle for the oscillator. Port 2 and ALE timing
changes in relation to duty cycle variation. Some AC timing characteristic drawings contain references to the CLK signal. This
waveform is provided to assist in determining the relative occurrence of events and cannot be used to determine the timing of
signals relative to the external clock. AC timing is characterized and guaranteed by design but is not production tested.

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AC SYMBOLS
The DS80C390 uses timing parameters and symbols similar to the original 8051 family. The following list of timing
symbols is provided as an aid to understanding the timing diagrams.
SYMBOL FUNCTION
t Time
A Address
C Clock
CE Chip Enable
D Input Data
H Logic Level High
L Logic Level Low
I Instruction
P PSEN
Q Output Data
R RD Signal
V Valid
W WR Signal
X No longer a valid logic level.
Z Tri-State
Figure 1. Multiplexed External Program Memory Read Cycle

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MOVX CHARACTERISTICS (MULTIPLEXED ADDRESS/DATA BUS) (Note 12)
PARAMETER SYMBOL MIN MAX UNITS
STRETCH
VALUES
CST (MD2:0)
0.375 tMCS - 5 ns CST = 0
0.5 tMCS - 5 ns 1 £CST £3
MOVX ALE Pulse Width tLHLL2
1.5 tMCS - 10 ns 4 £CST £7
0.125 tMCS - 5 ns CST = 0
0.25tMCS - 5 ns 1£CST £3
Port 0 MOVX Address, CE0–4,
PCE0–4 Valid to ALE Low tAVLL2
1.25 tMCS - 10 ns 4 £CST £7
0.25tMCS-5 ns CST = 0
0.125 tMCS - 5 ns 1£CST £3
Address Hold After MOVX
Read/Write
tLLAX2
tLLAX3 1.25 tMCS - 5 ns 4 £CST £7
0.5 tMCS - 6 ns CST = 0
RD Pulse Width tRLRH CST x tMCS - 10 ns 1 £CST £7
0.5 tMCS - 6 ns CST = 0
WR Pulse Width tWLWH CST x tMCS - 10 ns 1 £CST £7
0.5 tMCS - 20 ns CST = 0
RD Low to Valid Data In tRLDV C
ST x tMCS - 25 ns 1 £CST £7
Data Hold After Read tRHDX 0 ns
0.25 tMCS - 5 ns CST = 0
0.5tMCS - 5 ns 1 £CST £3
Data Float After Read tRHDZ
1.5 tMCS - 5 ns 4 £CST £7
0.625 tMCS - 20 ns CST = 0
(CST + 0.25) x tMCS - 20 ns 1 £CST £3
ALE Low to Valid Data In tLLDV
(CST + 1.25) x tMCS - 20 ns 4 £CST £7
0.75 tMCS - 26 ns CST = 0
(4CST + 0.5) x tMCS - 30 ns 1£CST £3
Port 0 Address, Port 4 CE, Port 5
PCE to Valid Data In tAVDV1
(4CST + 2.5) x tMCS - 30 ns 4 £CST £7
0.75 tMCS - 30 ns CST = 0
(4CST + 0.5) x tMCS - 30 ns 1 £CST £3
Port 2, 4 Address to Valid Data In tAVDV2
(4CST + 2.5) x tMCS - 30 ns 4 £CST £7
0.125 tMCS - 5 0.125 tMCS + 10 ns CST =0
0.25tMCS - 5 0.25tMCS + 10 ns 1 £CST £3
ALE Low to RD or WR Low tLLWL
1.25 tMCS - 5 1.25 tMCS + 10 ns 4 £CST £7
0.25 tMCS - 11 ns CST = 0
0.5tMCS - 11 ns 1 £CST £3
Port 0 Address, Port 4 CE, Port 5
PCE to RD or WR Low tAVWL1
2.5 tMCS - 11 ns 4 £CST £7
0.375 tMCS - 11 ns CST = 0
0.625tMCS - 11 ns 1 £CST £3
Port 2, 4 Address to or WR Low tAVWL2
2.625 tMCS - 11 ns 4 £CST £7
Data Valid to WR Transition tQVWX -8 ns
0.25 tMCS - 8 ns CST = 0
0.5tMCS - 10 ns 1 £CST £3
Data Hold After WR High tWHQX
1.5 tMCS - 10 ns 4 £CST £7
RD Low to Address Float tRLAZ See Note 12
-5 +10 ns CST = 0
0.25 tMCS - 7 0.25 tMCS + 5 ns 1 £CST £3
RD or WR High to ALE, Port 4 CE
or Port 5 PCE High tWHLH
1.25 tMCS - 7 1.25 tMCS +10 ns
4 £CST £7
Note 12:
All parameters apply to both commercial and industrial temperature operation. CST is the stretch cycle value determined by the
MD2:0 bits. tMCS is a time period shown in the tMCS Time Periods table. All signals characterized with load capacitance of 80pF
except Port 0, ALE, PSEN, RD, and WR with 100pF. Interfacing to memory devices with float times over 25ns can cause bus
contention and an increase in operating current. Specifications assume a 50% duty cycle for the oscillator; port 2 and ALE timing
changes in relation to duty cycle variation. Some AC timing characteristic drawings show the CLK signal, provided to determine the
relative occurrence of events and not the timing of signals relative to the external clock. During the external addressing mode, weak
latches maintain the previously driven value from the processor on Port 0 until Port 0 is overdriven by external memory; and on Port
1, 2 and 4 for one XTAL1 cycle prior to change in output address from Port 1, 2, and 4.

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Figure 2. Multiplexed 9-Cycle Address/Data CE0-3 MOVX Read/Write Operation

DS80C390 Dual CAN High-Speed Microprocessor
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Figure 3. Multiplexed 9-Cycle Address/Data PCE0-3 MOVX Read/Write Operation

DS80C390 Dual CAN High-Speed Microprocessor
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Figure 4. Multiplexed 2-Cycle Data Memory PCE0-3 Read or Write
Figure 5. Multiplexed 2-Cycle Data Memory CE0-3 Read

DS80C390 Dual CAN High-Speed Microprocessor
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Figure 6. Multiplexed 2-Cycle Data Memory CE0-3 Write
Figure 7. Multiplexed 3-Cycle Data Memory PCE0-3 Read or Write

DS80C390 Dual CAN High-Speed Microprocessor
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Figure 8. Multiplexed 3-Cycle Data Memory CE0-3 Read
Figure 9. Multiplexed 3-Cycle Data Memory CE0-3 Write

DS80C390 Dual CAN High-Speed Microprocessor
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Figure 10. Multiplexed 9-Cycle Data Memory PEC0-3 Read or Write
Figure 11. Multiplexed 9-Cycle Data Memory CE0-3 Read

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Figure 12. Multiplexed 9-Cycle Data Memory CE0-3 Write

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ELECTRICAL CHARACTERISTICS—(NONMULTIPLEXED ADDRESS/DATA BUS)
(Note 13)
40MHz VARIABLE CLOCK
PARAMETER SYMBOL CONDITIONS
MIN MAX MIN MAX UNITS
External oscillator 0 40 0 40
Oscillator Frequency 1 / tCLCL External crystal 1 40 1 40 MHz
PSEN Pulse Width tPLPH 0.5 tMCS - 8 ns
PSEN Low to Valid Instruction In tPLIV 0.5 tMCS - 20 ns
Input Instruction Hold After PSEN tPXIX 0 0 ns
Input Instruction Float After PSEN tPXIZ See MOVX
Characteristics ns
Port 1 Address, Port 4 CE to Valid
Instruction In tAVIV1 0.75 tMCS - 22 ns
Port 2, 4 Address to Valid Instruction
In tAVIV2 0.875 tMCS - 30 ns
Note 13:
All parameters apply to both commercial and industrial temperature operation unless otherwise noted. The value tMCS is a function of
the machine cycle clock in terms of the processor’s input clock frequency. These relationships are described in the Stretch Value
Timing table. All signals characterized with load capacitance of 80pF except Port 0, ALE, PSEN, RD, and WR with 100pF. Interfacing
to memory devices with float times (turn off times) over 25ns can cause bus contention. This does not damage the parts, but causes
an increase in operating current. Specifications assume a 50% duty cycle for the oscillator. Port 2 and ALE timing changes in relation
to duty cycle variation. Some AC timing characteristic drawings contain references to the CLK signal. This waveform is provided to
assist in determining the relative occurrence of events and cannot be used to determine the timing of signals relative to the external
clock.
Figure 13. Nonmultiplexed External Program Memory Read Cycle

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MOVX CHARACTERISTICS (NONMULTIPLEXED ADDRESS/DATA BUS)
PARAMETER SYMBOL MIN MAX UNITS
STRETCH
VALUES
CST (MD2:0)
0.5 tMCS - 6 CST = 0
RD Pulse Width tRLRH CST x tMCS - 6 ns 1 £CST £7
0.5 tMCS - 6 CST = 0
WR Pulse Width tWLWH CST x tMCS - 6 ns 1 £CST £7
0.5 tMCS - 20 CST = 0
RD Low to Valid Data In tRLDV C
ST x tMCS - 25 ns 1 £CST £7
Data Hold After Read tRHDX 0 ns
0.125 tMCS - 5 CST = 0
0.375tMCS - 5 1 £CST £3
Data Float After Read tRHDZ
1.375 tMCS - 5
ns
4 £CST £7
0.75 tMCS - 26 CST = 0
(4CST + 0.5) x tMCS - 30 1 £CST £3
Port 1 Address, Port 4 CE, Port 5
PCE to Valid Data In tAVDV1
(4CST + 2.5) x tMCS - 30
ns
4 £CST £7
0.75 tMCS - 30 CST = 0
(4CST + 0.625) x tMCS - 30 1 £CST £3
Port 2, 4 Address to Valid Data In tAVDV2
(4CST + 2.625) x tMCS - 30
ns
4 £CST £7
0.25 tMCS - 11 CST = 0
0.5 tMCS - 11 1 £CST £3
Port 0 Address, Port 4 CE, Port 5
PCE to RD or WR Low tAVWL1
2.5 tMCS - 11
ns
4 £CST £7
0.375 tMCS - 11 CST = 0
0.625tMCS - 11 1 £CST £3
Port 2, 4 Address to RD or WR Low tAVWL2
2.625 tMCS - 11
ns
4 £CST £7
Data Valid to WR Transition tQVWX -8 ns
0.25 tMCS - 8 CST = 0
0.5tMCS - 10 1 £CST £3
Data Hold After WR High tWHQX
1.5 tMCS - 10
ns
4 £CST £7
-5 10 CST = 0
0.25 tMCS - 7 0.25 tMCS + 10 1 £CST £3
RD or WR High to ALE, Port 4 CE or
Port 5 PCE High tWHLH
1.25 tMCS - 7 1.25 tMCS + 10
ns
4 £CST £7

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Figure 14. Nonmultiplexed 9-Cycle Address/Data CE0-3 MOVX Read/Write Operation

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Figure 15. Nonmultiplexed 9-Cycle Address/Data PCE0-3 MOVX Read/Write Operation

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Figure 16. Nonmultiplexed 2-Cycle Data Memory 3-PCE0 Read or Write
Figure 17. Nonmultiplexed 2-Cycle Data Memory CE0-3 Read

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Figure 18. Nonmultiplexed 2-Cycle Data Memory CE0-3 Write
Figure 19. Nonmultiplexed 3-Cycle Data Memory PEC0-3 Read or Write

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Figure 20. Nonmultiplexed 3-Cycle Data Memory CE0-3 Read
Figure 21. Nonmultiplexed 3-Cycle Data Memory CE0-3 Write

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Figure 22. Nonmultiplexed 9-Cycle Data Memory PCE0-3 Read or Write
Figure 23. Nonmultiplexed 9-Cycle Data Memory CE0-3 Read
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