
THEORY
OF
OPERATION
1. Outline. Please refer to the block diagram
of
Fig. 1 (P. 15).
The sine
wave
signal produced in the RF oscillator circuit
is
directly amplified by
the modulated amplifier when the MODULATION switch
is
at
CW,
then passes the
output
attenuator, and appears at the
output
terminal. When the MODULATION
switch
is
set to INT, the
output
can be internally modulated to approximately 40%
at
400 Hz by sine
wave
signal from the AF oscillator circuit, or externally
modulated when the switch
is
shifted to EXT. Required level
of
the modulating
signal
is
more than 1.5V rms for 40% modulation at frequencies between 50
Hz
and
10 kHz.
2.
RF
Oscillator Circuit. The RF oscillator circuit employs a Hartley circuit, the
oscillating elements consisting
of
coils (FREQ. RANGE), which are switched in six
ranges, and a variable capacitor (FREQUENCY dial), covering 2.5 times the lower
edge
of
each range or a total range
of
100 kHz to 30
MHz.
The amplifier circuit for the oscillator
is
a high input impedance circuit employ-
ing an FET and includes a feedback resistor for each range
so
that
output
may be
equal in all ranges.
3. Modulated Amplifier. The signal from the RF oscillator circuit
is
amplified
by
Q2, passes the modulated amplifier (a gate-modulated type built around Q3), and
then an
RLC
type low-pass filter before being taken
out
through an emitter
follower, Q4.
4. AF Oscillator Circuit. Transistor
Q5
forms an
LC
oscillator circuit, and its
output
is
couple.d to the modulated amplifier through
VRl
(INT.
MOD.
ADJ.).
5.
Power
Supply. Input
AC
voltage (100V, 117V or 230V
AC)
is
stepped down
to
a required voltage by the power transformer, rectified (full-wave) by rectifier D1,
and passed through a smoothing circuit to obtain the
DC
voltage. This power supply
section feeds 15V
DC
to
all
signal generator circuits
as
"B"
voltage.
4