e2v CCD42-90 User manual

FEATURES
*2048 by 4608 Pixel Format
*13.5 mm Square Pixels
*Image Area 27.6 x 62.2 mm
*Back Illuminated Format for High Quantum Efficiency
*Low Noise Output Amplifiers
*Wide Dynamic Range
*Symmetrical Anti-static Gate Protection
*3-side Buttable Package
*Gated Dump Drain on Readout Register
*Flatness better than 15 mm peak to valley
APPLICATIONS
*Astronomy
*Scientific Imaging
INTRODUCTION
This version of the CCD42 family of CCD sensors has full-frame
architecture. Back illumination technology, in combination with
an extremely low noise amplifier, makes the device well suited
to the most demanding applications, such as astronomy.
The output amplifier is designed to give excellent noise levels at
low pixel rates and can match the noise performance of most
conventional scientific CCDs at pixel rates as high as 1 MHz.
The low output impedance and optional FET buffer simplify the
interface with external electronics.
The readout register has a gate controlled dump-drain to allow
fast dumping of unwanted data. The register is designed to
accommodate four image pixels of charge and a summing well
is provided capable of holding six image pixels. The output
amplifier has a feature to enable the responsivity to be reduced,
allowing the reading of such large charge packets.
The device is supplied in a package designed to facilitate the
construction of large close-butted mosaics and is designed to
be used cryogenically. The design of the package will ensure
that the device flatness is maintained at the working
temperature.
The sensor is shipped in a protective container, but no
permanent window is fitted.
TYPICAL PERFORMANCE (at 173 K)
Pixel readout frequency .....20–3000 kHz
Output amplifier sensitivity .......4.5 mV/e
7
Peak signal ........... 150 ke
7
/pixel
Spectral range ....... 200–1060 nm
Readout noise (at 20 kHz) .......3 e
7
rms
QEat500nm .......... 90 %
Charge transfer efficiency ...... 99.9995 %
GENERAL DATA
Format
Image area ......... 27.6 x 62.2 mm
Active pixels (H) ........ 2048
(V) .......4608 + 4
Pixel size .......... 13.5 x 13.5 mm
Number of output amplifiers ......2
Number of underscan (serial) pixels . . . 50
The device has a 100% fill factor.
Package
Format .... invar metal package with PGA connector
Focal plane height above base ..... 14.0 mm
Package size ......... 28.2 x 67.3 mm
Package weight .......... 150 gapprox
Number of pins .......... 40
Inactive edge spacing:
sides ...........260+50 mm
top ...........120+50 mm
bottom (edge connections) ......5.0 mm
CCD42-90 Back Illuminated
High Performance CCD Sensor
#e2v technologies (uk) limited 2006 A1A-100026 Issue 8, March 2006
411/9572
e2v technologies (uk) limited, Waterhouse Lane, Chelmsford, Essex CM1 2QU, UK Telephone: [phone] Facsimile: [phone]
e-mail: [e-mail] Internet: www.e2v.com Holding Company: e2v technologies plc
e2v technologies inc. 4 Westchester Plaza, PO Box 1482, Elmsford, NY10523-1482 USA Telephone: [phone] Facsimile: [phone]
e-mail: [email protected]

NOTES
1. Signal level at which resolution begins to degrade.
2. Dark signal is typically measured at 188 K and V
ss
=+9V.
The dark signal at other temperatures may be estimated
from:
Q
d
/Q
d0
= 122T
3
e
76400/T
where Q
d0
is the dark current at 293 K.
3. Measurements made using charge generated by X-ray
photons of known energy. Charge transfer efficiency is
measured for a complete three-phase triplet.
4. Operation of the OG2 gate modifies the output node. OG2
= LO (mode 1) is normally used for low noise, high
responsivity. See also note 9.
5. Measured using a dual-slope integrator technique (i.e.
correlated double sampling) with a 10 ms integration period
with OG2 = OG1 + 1 V.
6. Readout above 3000 kHz can be achieved but performance
to the parameters given cannot be guaranteed.
PERFORMANCE (at 173 K unless stated)
Min Typical Max
Peak charge storage (see note 1) 100k 150k - e
7
/pixel
Peak output voltage (unbinned) 675 mV
Dark signal at 153 K (see note 2) 50.1 1 e
7
/pixel/hour
Charge transfer efficiency (see note 3):
parallel
serial
99.999
99.999
99.9995
99.9995
%
%
Output amplifier sensitivity (see note 4) 3.0 4.5 6.0 mV/e
7
Readout noise (see note 5) – 3 4 rms e
7
/pixel
Readout frequency (see note 6) – 20 3000 kHz
Output node capacity (see note 4):
OG2 low (mode 1)
OG2 high (mode 2)
–
–
200k
1000k
–
–
electrons
electrons
Serial register capacity – 600k – e
7
/pixel
Spectral Response at 173 K (Astronomy broadband devices)
Spectral Response (QE) Response
Wavelength (nm) Typical Min Non-uniformity, max (1s)
350 50 40 – %
400 80 70 3 %
500 90 80 – %
650 80 75 3 %
900 30 25 5 %
Note Devices with alternate spectral response are also available.
ELECTRICAL INTERFACE CHARACTERISTICS
Electrode capacitances (measured at mid-clock level)
Min Typical Max
I1/I1interphase – 35 – nF
R1/R1interphase – 80 – pF
I1/SS – 70 – nF
R1/SS – 150 – pF
Output impedance – 350 – O
100026, page 2 #e2v technologies

80
90
100
70
60
50
40
30
20
10
0
300 400 500 600 700 800 900 1000 1100
QUANTUM EFFICIENCY (%)
WAVELENGTH (nm)
7640A
TYPICAL SPECTRAL RESPONSE
(At 790 8C, measured with astronomy broadband AR coating)
TYPICAL OUTPUT CIRCUIT NOISE
(Measured using clamp and sample, temperature range 140 - 230 K)
7639
15
10
5
0
NOISE EQUIVALENT SIGNAL (e
—
rms)
10k 50k 100k 500k 1M 5M
FREQUENCY (Hz)
#e2v technologies 100026, page 3

BLEMISH SPECIFICATION
Traps Pixels where charge is temporarily held.
Traps are counted if they have a capacity
greater than 200 e
7
at 173 K.
Slipped columns Are counted if they have an amplitude
greater than 200 e
7
.
Black spots Are counted when they have a responsivity
of less than 80% of the local mean signal.
White spots Are counted when they have a generation
rate equivalent to 100 electrons per pixel
per hour at 153 K (typically measured at
188 K). The typical temperature depen-
dence of white spot blemishes is the same
as that of the average dark signal, i.e.:
Q
d
/Q
d0
= 122T
3
e
76400/T
Column defects A column which contains at least 100 white
or black defects.
CLOCK ARCHITECTURE
GRADE 0123
Column defects
(black or white) 2 6 12 24
White spots 300 450 800 1200
Traps 15 30 50 75
Total spots
(black and white)
900 1350 2000 3000
GRADE 5 Devices which are fully functional, with
image quality below that of grade 3, and
which may not meet all other performance
parameters; not all parameters may be
tested.
100026, page 4 #e2v technologies
123
nth line
Fourth line
Third line
Second line
First line
321321321
1024th column – right section 1st column – right section
123 123123123
Parallel transfer phases
50 elements
213
13213213213213
Serial transfer phases
12312312
312
50 elements
1SWL OG1L OG2L OSL
R12L
R11L
R13
R11R
R12R
OSR OG2R OG1R 1SWR
7896

CONNECTIONS, TYPICAL VOLTAGES AND ABSOLUTE MAXIMUM RATINGS
40-pin PGA connector
CLOCK CLOCK HIGH OR
PGA LOW DC LEVEL (V) MAXIMUM RATINGS
PIN REF DESCRIPTION Typical Min Typical Max with respect to V
SS
A1, A8,
C1, C8,
F2, F7
V
SS
Substrate n/a 0 9 10 –
D8 I11 Image area clock, phase 1 0 8 10 15 +20 V
E8 I12 Image area clock, phase 2 0 8 10 15 +20 V
F8 I13 Image area clock, phase 3 0 8 10 15 +20 V
D4 R11(L) Register clock phase 1 (left) 1 9 11 15 +20 V
E4 R12(L) Register clock phase 2 (left) 1 9 11 15 +20 V
D5 R11(R) Register clock phase 1 (right) (see note 7) 1 9 11 15 +20 V
E5 R12(R) Register clock phase 2 (right) (see note 7) 1 9 11 15 +20 V
F6 R13 Register clock phase 3 1 9 11 15 +20 V
E3 1R(L) Reset gate (left) 0 9 12 15 +20 V
E6 1R(R) Reset gate (right) 0 9 12 15 +20 V
E2 1SW(L) Summing well gate (left) 0 9 11 15 +20 V
E7 1SW(R) Summing well gate (right) 0 9 11 15 +20 V
F3 DG Dump gate (see note 8) 0 – 12 15 +20 V
D3 OG1(L) Output gate 1 (left) n/a 2 3 4 +20 V
D6 OG1(R) Output gate 1 (right) n/a 2 3 4 +20 V
B2 DD(L) Dump drain (left) n/a 20 24 26 70.3 to +30 V
B7 DD(R) Dump drain (right) n/a 20 24 26 70.3 to +30 V
D2 OG2(L) Output gate 2 (left) (see note 9) 4 16 20 24 +20 V
D7 OG2(R) Output gate 2 (right) (see note 9) 4 16 20 24 +20 V
B1 OD(L) Output drain (left) n/a 27 29 – 70.3 to +35 V
B8 OD(R) Output drain (right) n/a 27 29 – 70.3 to +35 V
A2 OS(L) Output source (left) n/a see note 10 70.3 to +25 V
A7 OS(R) Output source (right) n/a see note 10 70.3 to +25 V
C2 RD(L) Reset drain (left) n/a 15 17 – 70.3 to +25 V
C7 RD(R) Reset drain (right) n/a 15 17 – 70.3 to +25 V
Optional connections for 309 JFET
A3 RL(L) Load resistor (left) A
GND
(0 V)
A6 RL(R) Load resistor (right) A
GND
(0 V)
B3 OP(L) JFET source (left) see note 11
B6 OP(R) JFET source (right) see note 11
C3 JD(L) JFET drain (left) OD(L) +2 V
C6 JD(R) JFET drain (right) OD(L) +2 V
Other connections (options)
D1, F1 Temp Temperature sensor Thermistor
E1 – No connection –
If all voltages are set to the typical values operation at, or close to, specification should be obtained. Some adjustment within the
minimum - maximum range specified may be required to optimise performance. Refer to the specific device test data if possible.
Maximum voltage between pairs of pins: OS to OD +15 V.
Maximum current through any source or drain pin: 10 mA.
The CCD is not electrically connected to the metal package.
#e2v technologies 100026, page 5

7907
2048 (H) x 4612 (V) PIXELS
13.5 mm SQUARE
50 BLANK
ELEMENTS
50 BLANK
ELEMENTS
"
"
NOTES
7. With the R1connections shown, this device will operate through both outputs simultaneously (split serial mode). To operate
from the left-hand output only, R11(R) and R12(R) should be reversed, i.e. pin D5 = R12(R) and E5 = R11(R).
8. This gate is normally low. It should be pulsed high for charge dump.
9. OG2=OG1 + 1 V; for operation in high responsivity, low noise mode. For operation in low responsivity, increased charge
handling mode, OG2 should be set high.
10. OS = 3 to 5 V below OD typically. Use a3–5mAcurrent source or a 5 – 10 kOload.
11. The JFET is floating, with its gate connected to OS. A floating 10 kOload resistor is also connected to OS. The FET may be used
to buffer the chip output (OS) if desired; in this case, connect the FET output to A
GND
via a 5 mA load and RL directly to A
GND
.
(U309 data: V
GD
and V
GS
absolute maximum = 725 V). See detail below.
DEVICE SCHEMATIC Detail of FET Buffer
OUTPUT CIRCUIT
100026, page 6 #e2v technologies
1SW OG2OG1121RRD I13OD
OS
LS(SS) 0 V
OUTPUT
EXTERNAL
LOAD
7641
OS
10 kO
RL
OP
JD
GND
EXTERNAL
LOAD
7885B

FRAME READOUT TIMING DIAGRAM
DETAIL OF LINE TRANSFER (Not to scale)
NOTES
12. Clock edges are defined at mid-amplitude points.
13. Rise and fall times should be 4overlap times.
14. Alternate patterns may be used provided sequence and minimum overlaps are maintained.
#e2v technologies 100026, page 7
CHARGE COLLECTION PERIOD
READOUT PERIOD 54612 CYCLES 7908A
I11
I12
I13
R11
R12
R13
1R
OUTPUT
SWEEPOUT
FIRST VALID DATA
SEE DETAIL OF
LINE TRANSFER
SEE DETAIL OF
OUTPUT CLOCKING
I11
I12
I13
R11
R12
R13, SW1
1R
3
3
3 3
3
3
3"
"
"
"
"
"
"
t
oi
t
oi
t
oi
t
oi
t
oi
t
dri
t
wi
t
dir
7644A
3
"

DETAIL OF VERTICAL LINE TRANSFER (Single line dump)
DETAIL OF VERTICAL LINE TRANSFER (Multiple line dump)
100026, page 8 #e2v technologies
I11
I12
I13
R11
R12
R13, SW1
1R
DG
7990
END OF
PREVIOUS LINE
READOUT
LINE
TRANSFER
INTO
REGISTER
DUMP SINGLE LINE
FROM REGISTER TO
DUMP DRAIN
LINE
TRANSFER
INTO
REGISTER
START OF
LINE
READOUT
I11
I12
I13
R11
R12
R13, SW1
1R
DG
7991
END OF
PREVIOUS LINE
READOUT
1ST LINE 2ND LINE 3RD LINE CLEAR
READOUT
REGISTER
DUMP MULTIPLE LINE FROM REGISTER
TO DUMP DRAIN
LINE
TRANSFER
INTO
REGISTER
START OF
LINE
READOUT
T
i

DETAIL OF OUTPUT CLOCKING (Operation through both outputs)
LINE OUTPUT FORMAT (Split read-out operation)
CLOCK TIMING REQUIREMENTS
Symbol Description Min Typical Max
T
i
Image clock period 6t
oi
100 see note 15 ms
t
wi
Image clock pulse width 3t
oi
50 see note 15 ms
t
ri
Image clock pulse rise time (10 to 90%) 1 10 0.5t
oi
ms
t
fi
Image clock pulse fall time (10 to 90%) t
ri
10 0.5t
oi
ms
t
oi
Image clock pulse overlap 5 10 0.2T
i
ms
t
dir
Delay time, I1stop to R1start 10 20 see note 15 ms
t
dri
Delay time, R1stop to I1start 1 2 see note 15 ms
T
r
Output register clock cycle period 300 see note 16 see note 15 ns
t
rr
Clock pulse rise time (10 to 90%) 50 0.1T
r
0.3T
r
ns
t
fr
Clock pulse fall time (10 to 90%) t
rr
0.1T
r
0.3T
r
ns
t
or
Clock pulse overlap 50 0.5t
rr
0.1T
r
ns
t
wx
Reset pulse width 50 0.1T
r
0.2T
r
ns
t
rx
,t
fx
Reset pulse rise and fall times 20 0.5t
rr
0.2T
r
ns
t
dx
Delay time, 1R low to R13 low 50 0.5T
r
0.8T
r
ns
NOTES
15. No maximum other than that necessary to achieve an acceptable readout time.
16. As set by the readout period (1 ms to 100 ms is typical).
#e2v technologies 100026, page 9
R11
R12
R13, SW1
1R
OS
7989
t
or
T
r
t
wx
t
dx
OUTPUT
VALID
SIGNAL
OUTPUT
RESET FEEDTHROUGH
50 BLANK
1024 ACTIVE OUTPUTS
7645

C
B
A
D
AC AD
SEE NOTE
E
F
G
1H
J
K
L
2 HOLES
M4 x M DEEP
FULL THREAD
P (4 PLACES)
Q
4 HOLES TO TAKE
M3 SHIM STUDS
SEE NOTE
HOLE 1R x S DEEP
AB
Z PITCH
Z PITCH
AA
Y
X
W
6 HOLES
M2.5 x V DEEP
FULL THREAD
U
U
T
ABCDEF
1
2
3
4
5
6
7
8
7906B
OUTLINE
(All dimensions without limits are nominal)
Ref Millimetres
A 67.32 max
B 28.168 +0.010
C 64.96 +0.01
D 11.65
E 6.00
F 1.00
G 5.00
H 4.800 +0.005
J 14.35
K 12.60
L 4.60
M 6.00 min
P 8.00
Q 2.50
R 2.50
S 6.50
T 27.00
U 9.50
V 5.50 min
W 20.60
X 31.60
Y 44.60
Z 2.54
AA 2.70
AB 24.50
AC 14.00 +0.01
AD 15.00 +0.01
8.50 +0.01
PIN CONNECTION DETAILS
(See page 5)
Outline Note
The device is supplied with shim studs to hold it onto the
customer’s mounting plate, fitted to three of the four holes as
required. The studs are available in two lengths (see dimension
AD). The default unless specified is the 15.00 mm stud in the
offset position.
100026, page 10 #e2v technologies

HANDLING CCD SENSORS
CCD sensors, in common with most high performance MOS IC
devices, are static sensitive. In certain cases a discharge of
static electricity may destroy or irreversibly degrade the device.
The sensor is shipped with a shorting pad on the PGA for
electrostatic protection. This must be removed before use.
Accordingly, full antistatic handling precautions should be
taken whenever using a CCD sensor or module. These include:
*Working at a fully grounded workbench
*Operator wearing a grounded wrist strap
*All receiving socket pins to be positively grounded
*Unattended CCDs should not be left out of their conducting
foam or socket.
Evidence of incorrect handling will invalidate the warranty. All
devices are provided with internal protection circuits to the gate
electrodes (all CCD pins except V
SS
, DD, RD, OD and OS) but
not to the other pins. See also e2v technologies technical note
TN906/419 for information about mosaic assembly.
HIGH ENERGY RADIATION
Device characteristics will change when subject to ionising
radiation.
Users planning to operate CCDs in high radiation environments
are advised to contact e2v technologies.
TEMPERATURE LIMITS
Min Typical Max
Storage .......73 – 373 K
Operating ...... 153 173 323 K
Operation or storage in humid conditions may give rise to ice on
the sensor surface on cooling, causing irreversible damage.
Maximum device heating/cooling . . . 5 K/min
MATING CONNECTOR
A custom ZIF connector is available for use with this sensor.
The ZIF socket fits within the footprint of the package to
optimise close-packing of mosaic assemblies. Contact e2v
technologies for details.
Printed in England#e2v technologies 100026, page 11
Whilst e2v technologies has taken care to ensure the accuracy of the information contained herein it accepts no responsibility for the consequences of any use
thereof and also reserves the right to change the specification of goods without notice. e2v technologies accepts no liability beyond that set out in its standard
conditions of sale in respect of infringement of third party patents arising from the use of tubes or other devices in accordance with information contained herein.