Gan systems Gs-evb-hb-0650603b-hd User manual

GS-EVB-HB-0650603B-HD

Half Bridge Bipolar Drive Switch Board

Technical Manual

_____________________________________________________________________________________________________________________

Please refer to the Evaluation Board/Kit Important Notice on page # 16

GS-EVB-HB-0650603B-HD

Half Bridge Bipolar Drive Switch Board

Technical Manual

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GS-EVB-HB-0650603B-HD

Half Bridge Bipolar Drive Switch Board

Technical Manual

_____________________________________________________________________________________________________________________

Please refer to the Evaluation Board/Kit Important Notice on page # 16

DANGER

DO NOT TOUCH THE BOARD WHEN IT IS ENERGIZED AND ALLOW ALL

COMPONENTS TO DISCHARGE COMPLETELY PRIOR HANDLING THE BOARD.

HIGH VOLTAGE CAN BE EXPOSED ON THE BOARD WHEN IT IS CONNECTED

TO POWER SOURCE. EVEN BRIEF CONTACT DURING OPERATION MAY

RESULT IN SEVERE INJURY OR DEATH.

Please sure that appropriate safety procedures are followed. This evaluation kit

is designed for engineering evaluation in a controlled lab environment and

should be handled by qualified personnel ONLY. Never leave the board

operating unattended.

WARNING

Some components can be hot during and after operation. There is NO built-in

electrical or thermal protection on this evaluation kit. The operating voltage,

current, and component temperature should be monitored closely during

operation to prevent device damage.

CAUTION

This product contains parts that are susceptible to damage by electrostatic

discharge (ESD). Always follow ESD prevention procedures when handling the

product.

 GS-EVB-HB-0650603B-HD 
Half Bridge Bipolar Drive Switch Board 
Technical Manual 
 _____________________________________________________________________________________________________________________ 
GS-EVB-HB-0650603B-HD TM Rev. 210712 © 2021 GaN Systems Inc www.gansystems.com 3 
 Please refer to the Evaluation Board/Kit Important Notice on page # 16 
Contents 
1Overview..............................................................................................................................................................5 
1.1 Introduction ...............................................................................................................................................5 
1.2 Quick Start Guide......................................................................................................................................5 
2Technical Description.........................................................................................................................................6 
2.1 Gate Pull Up and Pull Down Resistors ..................................................................................................6 
2.2 Enable and Start Sequence .......................................................................................................................6 
2.3 Measurement Points .................................................................................................................................7 
2.4 Bipolar Gate Drive.....................................................................................................................................7 
2.5 Propagation Delay.....................................................................................................................................8 
3Test results ...........................................................................................................................................................9 
3.1 Double pulse test.......................................................................................................................................9 
3.2 Components Specification......................................................................................................................10 
3.3 DPT Result 100V –15A...........................................................................................................................11 
3.4 DPT Result 400V –62A...........................................................................................................................11 
4Schematic ...........................................................................................................................................................12 
5Layout.................................................................................................................................................................13 
6Bill of Materials .................................................................................................................................................14 
7Disclaimer ..........................................................................................................................................................15 
 
 

 GS-EVB-HB-0650603B-HD 
Half Bridge Bipolar Drive Switch Board 
Technical Manual 
 _____________________________________________________________________________________________________________________ 
GS-EVB-HB-0650603B-HD TM Rev. 210712 © 2021 GaN Systems Inc www.gansystems.com 4 
 Please refer to the Evaluation Board/Kit Important Notice on page # 16 
List of Figures 
Figure 1: GS-EVB-HB-0650603B-HD Quick Start ...................................................................................................5 
Figure 2: HEY1011-L12C Wired-AND enable ........................................................................................................6 
Figure 3: HEY1011-L12C Start up sequence............................................................................................................7 
Figure 4: Measurements points.................................................................................................................................7 
Figure 5: Bi-polar gate drive schematic ...................................................................................................................8 
Figure 6: Typical Driver output at 100kHz .............................................................................................................9 
Figure 7: Double Pulse Test.......................................................................................................................................9 
Figure 8: Double Pulse Test Waveforms................................................................................................................10 
Figure 9: DPT 100V –15A........................................................................................................................................11 
Figure 10: DPT 400V –62A......................................................................................................................................11 
Figure 11: GS-EVB-HB-0650603B-HD Schematic .................................................................................................12 
Figure 12: GS-EVB-HB-0650603B-HD Silkscreen and component placement..................................................13 
Figure 13: GS-EVB-HB-0650603B-HD Top Side Copper (L) and Layer 2 Copper (R) .....................................13 
Figure 14: GS-EVB-HB-0650603B-HD Layer 3 Copper(L) and Bottom Side Copper (R) ................................13 
 
List of Tables 
Table 1: Bill of materials..........................................................................................................................................14 
 

GS-EVB-HB-0650603B-HD

Half Bridge Bipolar Drive Switch Board

Technical Manual

_____________________________________________________________________________________________________________________

Please refer to the Evaluation Board/Kit Important Notice on page # 16

1Overview

1.1 Introduction

The Integrated Circuits Half Bridge Driver-Switch GS-EVB-HB-0650603B-HD is a demonstration board

containing two HEY1011-L12C GaN FET drivers and two 650V, 60A GaN FETs configured in a half bridge

configuration.

The datasheet for the HEY1011-L12C in this board can be found here.

The GS-EVB-HB-0650603B-HD can be used to perform double pulse tests, or to interface the half bridge to

an existing LC power section, both as shown below.

The isolated HEY1011-L12C driver does not require secondary side power or bootstrap components. Gate

drive power is supplied to secondary side from the primary side supply voltage VDRV. The amplitude of

the gate drive can be varied by varying VDRV between 7 V and 15 V.

1.2 Quick Start Guide

Figure 1: GS-EVB-HB-0650603B-HD Quick Start

1. Apply VDRV = 12V

2. Link pins EN_PU and EN (if not using external Enable control)

3. Apply input gate signals, with adequate dead time, to the IN_L and IN_H inputs.

4. Convenient test points a located on the test board as shown above. A suitable differential

oscilloscope should be used to monitor the high side gate signal from VGH to VSW.

VDRV

IN_H

IN_L

LINK

VBUS

LOUT

COUT

Optional external

decoupling

GS-EVB-HB-0650603B-HD

Half Bridge Bipolar Drive Switch Board

Technical Manual

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Please refer to the Evaluation Board/Kit Important Notice on page # 16

2Technical Description

2.1 Gate Pull Up and Pull Down Resistors

The HEY1011-L12C gate driver has independent output pins for the gate pull up and gate pull down

allowing control of the turn-on and turn-off rise and fall times.

The default values for these resistors are:

•OUTPU: R1 and R5 = 10 Ohms

•OUTPD: R3 and R7 = 1 Ohm

These values can be modified to suit your own application.

2.2 Enable and Start Sequence

The HEY1011-L12C has an open drain enable pin (EN) to facilitate a system level wired-AND start up.

When the enable pin is externally pulled low this forces the driver into a low power mode. The driver

output is pulled low in this mode. In the event of an internal fault condition, such as UVLO, this pin is

actively pulled low internally by the driver. During normal operation, the pin is released by the driver, and

must be pulled high with an external pull-high resistor. This functionality can be used by the PWM

controller as an indication that it can start sending IN pulses to the driver. It is typically wired AND with

the controller enable pin as shown in Figure 2 below.

The GS-EVB-HB-0650603B-HD evaluation board provides direct access to the EN pin on connector

CONN1. Internally the board contains a 100k pull up resistor connected from VDRV to the EN_PU pin on

connector CONN1 –see schematic in Figure 11. If external control of the enable function is not required,

pins EN and EN_PU must be linked together on CONN1 to make use of the internal 100k pull up resistor

to enable the driver. If the EN pin is left floating, the drivers will not respond to INL or INH input signals.

Figure 2: HEY1011-L12C Wired-AND enable

The start up sequence of the HEY1011-L12C is shown in Figure 3 below. Time TSTART is defined as the time

after which VDRV reaches the UVLO rising level to the HEY1011-L12C releasing the EN internal pull down.

IMPORTANT the IN signal must not be applied before the EN pin has been released.

GS-EVB-HB-0650603B-HD

Half Bridge Bipolar Drive Switch Board

Technical Manual

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Please refer to the Evaluation Board/Kit Important Notice on page # 16

Figure 3: HEY1011-L12C Start up sequence.

2.3 Measurement Points

The GS-EVB-HB-0650603B-HD EVB contains convenient test points for monitoring the high and low side

gate drives as well as the switch node as shown in Figure 4 below.

When measuring VGS_H use a differential probe with suitable ratings for the applied bus voltage. The GS-

EVB-HB-0650603B-HD EVB uses a bipolar gate drive arrangement as shown in Figure 5 below. When

measuring VGS, both gate drives are measured relative to the source of their associated GaN FET. Therefore,

the off-state voltage will be negative.

It is important to use a low inductance scope probe ground lead as shown to avoid pickup of spurious

switching noise.

2.4 Bipolar Gate Drive

Due to the high rate of change of voltages and currents in power switching circuits, unwanted inductor

currents and capacitor voltage drops can be created.

One such example is the false turn on of a FET due to a dv/dt event. In a half bridge circuit, after the low

side FET has been turned off and a suitable dead-time elapsed, the high side FET is turned on. This

produces a rapidly changing switch node voltage at the drain of the low side FET. This voltage will

produce a capacitor current:

VGS_H

VGS_L

SWN

Low inductance

scope measurement

Figure 4: Measurements points

GS-EVB-HB-0650603B-HD

Half Bridge Bipolar Drive Switch Board

Technical Manual

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Please refer to the Evaluation Board/Kit Important Notice on page # 16

  







flowing in the gate-drain capacitance, CGD, and driver output. It will cause the voltage on the gate of the

low side FET to rise. If this voltage spike peaks beyond the threshold voltage VTH, the FET will conduct.

Considering that the high side FET is also conducting, this can result in a potentially destructive shoot-

through event.

The GS-EVB-HB-0650603B-HD EVB uses a bipolar gate drive arrangement which is useful to mitigate

against the effects of gate-drain capacitor currents. The secondary supply voltage VSEC is a function of the

primary supply voltage VDRV. The zener diode, CR1, will regulate the positive turn on voltage of the GaN

FET. During the turn-off of period, the gate voltage will be negative with a value of:

VGS_OFF = VSEC –VZENER. VSEC is typically 9 V.

This negative VGS_OFF voltage allows more margin before the threshold voltage can be reached.

Figure 5: Bi-polar gate drive schematic

2.5 Propagation Delay

•VDRV = 12V

•Input = 100kHz

•RPU = 10R, RPD = 1R

•Power train un-loaded. That is, VHV+ = 0V.

GS-EVB-HB-0650603B-HD

Half Bridge Bipolar Drive Switch Board

Technical Manual

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CH2: Low side driver input

CH1: Low side driver (IC2) output wrt VHV-

CH2: Low side driver input

CH1: Low side driver (IC2) output wrt VHV-

CH2: Low side driver input

CH1: Low side driver (IC2) output wrt VHV-

Low side driver output

Typical Turn-on Propagation Delay

Typical Turn-off Propagation Delay

Figure 6: Typical Driver output at 100kHz

3Test results

3.1 Double pulse test

The double pulse test is used to evaluate the switching characteristics of a power switch under hard

switching but in a safe manner.

For a low side switch the setup is as shown below:

Figure 7: Double Pulse Test

The low side switch is driven with two pulses as shown below. The high side switch can be held off or

driven with the inverse of the low side gate switch (with adequate dead time).

GS-EVB-HB-0650603B-HD

Half Bridge Bipolar Drive Switch Board

Technical Manual

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Please refer to the Evaluation Board/Kit Important Notice on page # 16

Figure 8: Double Pulse Test Waveforms

An inductor is placed in parallel with the high side switch. The goal of this inductor is to establish the test

level current in the low side switch at the end of the first on pulse (1). The magnitude of the test level

current at the end of period 1 is given by:







During period 2, the inductor current will naturally decay. The duration of period 2 should not be too long

that inductor current deviates significantly from the desired test level.

During period 3, the inductor current will again rise. Period 3 should not be so long that the inductor

current rises to an excessive level.

The falling edge of pulse 1 is used to examine the hard turn off characteristics of the switch. The rising

edge of pulse 3 is used to examine the hard turn on characteristics of the switch. By only applying these

two pulses, the switches are only on for a very short time and should not overheat.

3.2 Components Specification

COMPONENTS

Drivers:

Heyday HEY1011-L12C

Inductor:

49uH 360mΩAir Core

RPU:

10

RPD:

1

VDS

VGS_L

123

Test level

current

Hard switching edges

IDS

GS-EVB-HB-0650603B-HD

Half Bridge Bipolar Drive Switch Board

Technical Manual

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Please refer to the Evaluation Board/Kit Important Notice on page # 16

3.3 DPT Result 100V –15A

CH1 (Red): Low side output wrt VHV-

CH2 (Grn): Switch Node (500MHz Probe)

CH4 (Blu): Inductor Current (1A/V)

CH1 (Red): Low side output wrt VHV-

CH2 (Grn): Switch Node (500MHz Probe)

CH4 (Blu): Inductor Current (1A/V)

CH1 (Red): Low side output wrt VHV-

CH2 (Grn): Switch Node (500MHz Probe)

CH4 (Blu): Inductor Current (1A/V)

DPT Overview

DPT Hard switching turn off

DPT Hard switching turn on

Time base (12.5ns/div)

Figure 9: DPT 100V –15A

3.4 DPT Result 400V –62A

CH1 (Red): Low side output wrt VHV-

CH2 (Grn): Switch Node (500MHz Probe)

CH4 (Blu): Inductor Current (1A/V)

CH1 (Red): Low side output wrt VHV-

CH2 (Grn): Switch Node (500MHz Probe)

CH4 (Blu): Inductor Current (1A/V)

CH1 (Red): Low side output wrt VHV-

CH2 (Grn): Switch Node (500MHz Probe)

CH4 (Blu): Inductor Current (1A/V)

DPT Overview

DPT Hard switching turn off

DPT Hard switching turn on

Time base (12.5ns/div)

Figure 10: DPT 400V –62A

GS-EVB-HB-0650603B-HD

Half Bridge Bipolar Drive Switch Board

Technical Manual

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Please refer to the Evaluation Board/Kit Important Notice on page # 16

4Schematic

Figure 11: GS-EVB-HB-0650603B-HD Schematic

GS-EVB-HB-0650603B-HD

Half Bridge Bipolar Drive Switch Board

Technical Manual

_____________________________________________________________________________________________________________________

Please refer to the Evaluation Board/Kit Important Notice on page # 16

5Layout

Figure 12: GS-EVB-HB-0650603B-HD Silkscreen and component placement

Figure 13: GS-EVB-HB-0650603B-HD Top Side Copper (L) and Layer 2 Copper (R)

Figure 14: GS-EVB-HB-0650603B-HD Layer 3 Copper(L) and Bottom Side Copper (R)

GS-EVB-HB-0650603B-HD

Half Bridge Bipolar Drive Switch Board

Technical Manual

_____________________________________________________________________________________________________________________

Please refer to the Evaluation Board/Kit Important Notice on page # 16

6Bill of Materials

Table 1: Bill of materials

Item

Ref Name

Description

Value

Qty

Manufacturer

Manufacturer PN

C1, C2

CAP CERALINK, 1uF,500V

PLZT

1uF

TDK

B58031U5105M062

C14,C15,C16,C17

CAP, CER,100nF,16V,X7R, S0402

100nF

KEMET

C0402C104K4RALTU

C3,C4

CAP, CER, 75pF,50V,NP0, S0402

75pF

KEMET

C0402C750J5GACTU

C6,C13

CAP, CER,1uF,25V,X5R, S0402

1uF

MURATA

GRM155R61E105KA12

CONN1

HEADER, 6 WAY, 2.54mm

6WAY, 2P54

WURTH

61300611121

CR1,CR2

DIO ZEN, 6V2, 250mW, 2%,

SOD882

BZX884-C6V2

NEXPERIA

BZX884-B6V2,315

IC1,IC2

GaN FET Driver

HEY1011-L12C

HEYDAY IC

HEY1011-L12C

Q1,Q2

NGAN 650V 60A

GAN SYSTEMS

NGAN 650V 60A

R1,R5

RES, SMD, 10R, 0.063W, 1%,

S0402

10R

VISHAY

CRCW040210R0FKED

R11,R13

RES, SMD, 3K6, 0.063W, 1%,

S0402

3.6K

PANASONIC

ERJ2RKF3601X

RES, SMD, 100K, 0.063W, 1%,

S0402

100K

PANASONIC

ERJ2GEJ104X

R3,R7

RES, SMD, 1R0, 0.063W, 1%,

S0402

VISHAY

CRCW04021R00FKED

R4,R8

RES, SMD, 0R0, 0.063W, 1%,

S0402

VISHAY

RCG04020000Z0ED

R6,R9

RES, SMD, 49R9, 0.063W, 1%,

S0402

49R9

VISHAY

CRCW040249R9FKED

GS-EVB-HB-0650603B-HD

Half Bridge Bipolar Drive Switch Board

Technical Manual

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Please refer to the Evaluation Board/Kit Important Notice on page # 16

7Disclaimer

Heyday Integrated Circuits (“Heyday”) provides all data in any resource and in any format such as, but

not limited to datasheets, reference designs, application notes, web tools and safety information “as is” and

with all faults, and disclaims any type of warranties, fitness for a particular purpose or non-infringement

of 3rd party intellectual property rights. Any examples described herein are for illustrative purposes only

and are intended to provide customers with the latest, accurate, and in-depth documentation regarding

Heyday products and their potential applications. These resources are subject to change without notice.

Heyday allows you to use these resources only for development of an application that uses the Heyday

product(s) described in the resource. Other reproduction and display of these resources are prohibited.

Heyday shall have no liability for the consequences of use of the information supplied herein.

GS-EVB-HB-0650603B-HD

Half Bridge Bipolar Drive Switch Board

Technical Manual

_____________________________________________________________________________________________________________________

Please refer to the Evaluation Board/Kit Important Notice on page # 16

Evaluation Board/kit Important Notice

GaN Systems Inc. (GaN Systems) provides the enclosed product(s) under the following AS IS conditions:

This evaluation board/kit being sold or provided by GaN Systems is intended for use for ENGINEERING

DEVELOPMENT, DEMONSTRATION, and OR EVALUATION PURPOSES ONLY and is not considered by GaN

Systems to be a finished end-product fit for general consumer use. As such, the goods being sold or provided are

not intended to be complete in terms of required design-, marketing-, and/or manufacturing-related protective

considerations, including but not limited to product safety and environmental measures typically found in end

products that incorporate such semiconductor components or circuit boards. This evaluation board/kit does not fall

within the scope of the European Union directives regarding electromagnetic compatibility, restricted substances

(RoHS), recycling (WEEE), FCC, CE or UL, and therefore may not meet the technical requirements of these directives,

or other related regulations.

If this evaluation board/kit does not meet the specifications indicated in the Technical Manual, the board/kit may be

returned within 30 days from the date of delivery for a full refund. THE FOREGOING WARRANTY IS THE

EXCLUSIVE WARRANTY MADE BY THE SELLER TO BUYER AND IS IN LIEU OF ALL OTHER WARRANTIES,

EXPRESSED, IMPLIED, OR STATUTORY, INCLUDING ANY WARRANTY OF MERCHANTABILITY OR FITNESS

FOR ANY PARTICULAR PURPOSE. EXCEPT TO THE EXTENT OF THIS INDEMNITY, NEITHER PARTY SHALL

BE LIABLE TO THE OTHER FOR ANY INDIRECT, SPECIAL, INCIDENTAL, OR CONSEQUENTIAL DAMAGES.

The user assumes all responsibility and liability for proper and safe handling of the goods. Further, the user

indemnifies GaN Systems from all claims arising from the handling or use of the goods. Due to the open construction

of the product, it is the user’s responsibility to take any and all appropriate precautions with regard to electrostatic

discharge.

No License is granted under any patent right or other intellectual property right of GaN Systems whatsoever. GaN

Systems assumes no liability for applications assistance, customer product design, software performance, or

infringement of patents or any other intellectual property rights of any kind.

GaN Systems currently services a variety of customers for products around the world, and therefore this transaction

is not exclusive.

Please read the Technical Manual and, specifically, the Warnings and Restrictions notice in the Technical Manual

prior to handling the product. Persons handling the product(s) must have electronics training and observe good

engineering practice standards.

This notice contains important safety information about temperatures and voltages. For further safety concerns,

please contact a GaN Systems’ application engineer.

GS-EVB-HB-0650603B-HD

Half Bridge Bipolar Drive Switch Board

Technical Manual

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Please refer to the Evaluation Board/Kit Important Notice on page # 16

In Canada:

GaN Systems Inc.

1145 Innovation Drive Suite 101

Ottawa, Ontario, Canada K2K 3G8

T +1 613-686-1996

In Europe:

GaN Systems Ltd., German Branch

Terminalstrasse Mitte 18,

85356 München, Germany

T +49 (0) 8165 9822 7260

In the United States:

GaN Systems Corp. 2723 South State Street,

Suite 150, Ann Arbor, MI. USA 48104 T +1

248-609-7643

www.gansystems.com

Important Notice –Unless expressly approved in writing by an authorized representative of GaN Systems, GaN Systems components are not designed, authorized

or warranted for use in lifesaving, life sustaining, military, aircraft, or space applications, nor in products or systems where failure or malfunction may result in

personal injury, death, or property or environmental damage. The information given in this document shall not in any event be regarded as a guarantee of

performance. GaN Systems hereby disclaims any or all warranties and liabilities of any kind, including but not limited to warranties of non-infringement of

intellectual property rights. All other brand and product names are trademarks or registered trademarks of their respective owners. Information provided herein

is intended as a guide only and is subject to change without notice. The information contained herein or any use of such information does not grant, explicitly, or