Innodisk nanoSSD PCIe 3TE7 Series User manual

PCIe 3TE7 Series
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nanoSSD PCIe 3TE7
2Rev 1.7 TPS, Apr., 2022
Table fo contents
LIST OF FIGURES ........................................................................................................ 7
1. PRODUCT OVERVIEW .............................................................................................. 8
1.1 INTRODUCTION OF INNODISK NANOSSD PCIE 3TE7 ..................................................... 8
1.2 PRODUCT VIEW AND MODELS .................................................................................... 8
2. PRODUCT SPECIFICATIONS..................................................................................... 9
2.1 Capacity and Device Parameters ........................................................................ 9
2.2 PERFORMANCE ........................................................................................................ 9
2.3 Electrical Specifications .................................................................................... 10
2.3.1 Power Requirement .................................................................................... 10
2.3.2 Power Consumption.................................................................................... 10
2.4 ENVIRONMENTAL SPECIFICATIONS ........................................................................... 10
2.4.1 Temperature Ranges................................................................................... 10
2.4.2 Humidity ..................................................................................................... 11
2.4.3 Shock and Vibration.................................................................................... 11
2.4.4 Mean Time between Failures (MTBF) .......................................................... 11
2.5 ROHS COMPLIANCE ............................................................................................... 11
2.6 Reliability ......................................................................................................... 12
2.7 TRANSFER MODE ................................................................................................... 12
2.8 Ball and Signal Description ............................................................................... 13
2.9 Power Supply & Sequence ................................................................................ 17
2.10 Mechanical Dimensions .................................................................................. 18
2.11 Seek Time....................................................................................................... 18
2.12 NAND FLASH MEMORY ........................................................................................ 18
3. THEORY OF OPERATION ........................................................................................ 19
3.1 OVERVIEW .......................................................................................................... 19
3.2 ERROR DETECTION AND CORRECTION ........................................................................ 19
3.3 WEAR-LEVELING .................................................................................................. 19
3.4 BAD BLOCKS MANAGEMENT..................................................................................... 20
3.5 POWER CYCLING .................................................................................................. 20
3.6 GARBAGE COLLECTION ........................................................................................... 20
3.7 TRIM ................................................................................................................ 20
3.8 POWER MANAGEMENT............................................................................................ 20
4. INSTALLATION REQUIREMENTS ............................................................................ 21
4.1 REFERENCE DESIGN .............................................................................................. 21
4.2 PRODUCTION GUIDE.............................................................................................. 21
4.2.1 Preheat ....................................................................................................... 21

nanoSSD PCIe 3TE7
3Rev 1.7 TPS, Apr., 2022
4.2.2 Reflow Profile ............................................................................................. 21
5. PART NUMBER RULE .............................................................................................. 23

nanoSSD PCIe 3TE7
4Rev 1.7 TPS, Apr., 2022
REVISION HISTORY
Revision
Description
Date
Rev. 1.0
First Released
Sep., 2020
Rev. 1.1
Update MSL Declaration
Oct., 2020
Rev. 1.2
Update 512GB
Nov., 2020
Rev. 1.3
Remove AES and TCG Opal support
Jun., 2021
Rev. 1.4
Updates:
- pin layout drawing
- pin assignment for Y19
- device parameters (user capacity)
- mechanical dimensions 32GB-256GB, 512GB and
bottom view
- RoHS and REACH declaration
Jul., 2021
Rev. 1.5
Updates:
-performance
-feature list
-storage temperature
-power consumption
Remove:
RoHS, REACH and MSL
Jul., 2021
Rev 1.6
Update nanoSSD PCIe 3TE7 pin assignment for C10,
D10, and C6
Update block diagram
Mar., 2022
Rev 1.7
Update mechanical drawing and PN rule table
Apr., 2022

nanoSSD PCIe 3TE7
5Rev 1.7 TPS, Apr., 2022
Features: Power Requirements:
PCIe Gen.3 x 2
Industrial 3D TLC 64-layer NAND
Standard & Wide-temperature
Dynamic Thermal Management
Hybrid Write
Performance: Reliability:
Sequential Read up to 1,650 MB/s
Sequential Write up to 1,350 MB/s
*2years duration after 100% (3000) P/E cycles at 55℃
For warranty details, please refer to:
https://www.innodisk.com/en/support_and_service/warranty
Input Voltage
3.3V± 5%
Max Operating
Wattage
1.6W
Idle Wattage
0.4W
Capacity
[Client]
TBW
[Client]
DWPD
32GB
64GB
128GB
256GB
512GB
19
38
76
152
304
0.81
0.81
0.81
0.81
0.81
Data Retention
Years
Warranty
2 Years*

nanoSSD PCIe 3TE7
6Rev 1.7 TPS, Apr., 2022
List of Tables
TABLE 1: DEVICE PARAMETERS.....................................................................................................................................9
TABLE 2: PERFORMANCE ................................................................................................................................................9
TABLE 3: INNODISK NANOSSD PCIE 3TE7 POWER REQUIREMENT................................................................10
TABLE 4: POWER CONSUMPTION ...............................................................................................................................10
TABLE 5: TEMPERATURE RANGE FOR NANOSSD PCIE 3TE7.............................................................................10
TABLE 6: SHOCK/VIBRATION TESTING FOR NANOSSD PCIE 3TE7 ...............................................................11
TABLE 7: NANOSSD PCIE 3TE7 MTBF..................................................................................................................11
TABLE 8: INNODISK NANOSSD PCIE 3TE7 PIN ASSIGNMENT ........................................................................13

nanoSSD PCIe 3TE7
7Rev 1.7 TPS, Apr., 2022
List of Figures
FIGURE 1: INNODISK NANOSSD PCIE 3TE7 ..........................................................................................................8
FIGURE 2: INNODISK NANOSSD PCIE 3TE7 PIN LAYOUT ................................................................................16
FIGURE 3: INNODISK NANOSSD PCIE 3TE7 BLOCK DIAGRAM........................................................................19

nanoSSD PCIe 3TE7
8Rev 1.7 TPS, Apr., 2022
1. Product Overview
1.1 Introduction of Innodisk nanoSSD PCIe 3TE7
InnoDisk nanoSSD PCIe 3TE7 is an NVM Express storage device designed as the standard
11.5*13.0 mm2 ball grid array (BGA) package form factor with PCIe interface. The nanoSSD
supports PCIe Gen III x2 within a tiny dimension, and it is compliant with NVM 1.3 providing
excellent performance. Moreover, it adopts industrial 3D TLC NAND Flash providing high
endurance and reliability, as well as low power consumption and high reliability. It offers an ideal
solution for embedded, automotive, medical, gaming and most industrial applications.
CAUTION TRIM must be enabled.
TRIM enables SSD’s controller to skip invalid data instead of moving. It can free up significant amount of
resources, extends the lifespan of SSD by reducing erase, and write cycles on the SSD. Innodisk’s handling of
garbage collection along with TRIM command improves write performance on SSDs.
1.2 Product View and Models
Innodisk nanoSSD PCIe 3TE7 is available in follow capacities:
nanoSSD PCIe 3TE7 32GB nanoSSD PCIe 3TE7 64GB
nanoSSD PCIe 3TE7 128GB nanoSSD PCIe 3TE7 256GB
nanoSSD PCIe 3TE7 512GB
Figure 1: Innodisk nanoSSD PCIe 3TE7

nanoSSD PCIe 3TE7
9Rev 1.7 TPS, Apr., 2022
2. Product Specifications
2.1 Capacity and Device Parameters
nanoSSD PCIe 3TE7 device parameters are shown in Table 1.
Table 1: Device parameters
Capacity
LBA
User Capacity
(MB)
32GB
62533296
30533
64GB
125045424
61057
128GB
250069680
122104
256GB
500118192
244198
512GB
1000215216
488386
2.2 Performance
Burst Transfer Rate: 6.0Gbps
Table 2: Performance
Capacity
32GB
64GB
128GB
256GB
512GB
Sequential
Read (Max)
300 MB/s
600 MB/s
1,150 MB/s
1,600 MB/s
1,650 MB/s
Sequential
Write (Max)
130 MB/s
280 MB/s
550 MB/s
1,100 MB/s
1,350 MB/s
4KB Random
Read (QD32)
26,000
52,000
101,700
155,000
157,000
4KB Random
Write (QD32)
30,000
64,000
126,000
132,000
136,000
Note: * Performance is based on CrystalDiskMark 6.0.2 with file size 1000MB of Queue Depth 32

nanoSSD PCIe 3TE7
10 Rev 1.7 TPS, Apr., 2022
2.3 Electrical Specifications
2.3.1 Power Requirement
Table 3: Innodisk nanoSSD PCIe 3TE7 Power Requirement
Item
Symbol
Rating
Unit
Input voltage
VIN
+3.3 DC +- 5%
V
2.3.2 Power Consumption
Table 4: Power Consumption
Voltage Rail
Rating
Power Consumption (W)
Main power supply
3.3 V ± 5%
1.6
Flash IO supply
1.8 V ± 5%
0.3
Controller core supply
1.2 V ± 5%
0.6
* Target: nanoSSD PCIe 3TE7 512GB
2.4 Environmental Specifications
2.4.1 Temperature Ranges
Table 5: Temperature Range for nanoSSD PCIe 3TE7
Temperature
Range
Operating
Standard Grade: 0°C to +70°C
Industrial Grade: -40°C to +85°C
Storage
-40°C to +85°C
Below are some recommendations for PCB design to lowest effect of thermal.
Maximize copper thickness and trace width for all pins to thermal features such as thermal vias,
thermal side rails, and thermal conduction screw holes.
Copper ground/supply planes in the PCB can provide very effective heat dissipation for the IC
package. To maximize effectiveness, thermal vias should be added to connect the package’s
mechanical ground balls to the ground plane. There should be at least one thermal via
allocated for each MGB of the package. The plating thickness of vias should be maximized to
optimize thermal conduction.