ON Semiconductor Fairchild FEBFDD850N10LD_CS001 User manual

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© 2013 Fairchild Semiconductor Corporation FEBFDD850N10LD_CS001 •Rev. 1.0.0
User Guide for
FEBFDD850N10LD_CS001
35 W Boost Converter for
LED Drive using BoostPak
Featured Fairchild Product:
FDD850N10LD
Direct questions or comments
about this evaluation board to:
“Worldwide Direct Support”
Fairchild Semiconductor.com

© 2013 Fairchild Semiconductor Corporation 2 FEBFDD850N10LD_CS001 •Rev. 1.0.0
Table of Contents
1. Introduction............................................................................................................................... 3
1.1. Description ....................................................................................................................... 3
1.2. Features ............................................................................................................................ 3
1.3. FDD850N10LD Diagrams ............................................................................................... 3
2. Evaluation Board Specifications............................................................................................... 4
3. Photographs............................................................................................................................... 5
4. Printed Circuit Board ................................................................................................................ 6
5. Schematic.................................................................................................................................. 7
6. Bill of Materials ........................................................................................................................ 8
7. Inductor Specifications ........................................................................................................... 10
8. Test Conditions & Test Equipment......................................................................................... 11
9. Performance of Evaluation Board........................................................................................... 12
9.1. Switching Waveforms .................................................................................................... 12
9.2. Output Regulation Characteristics ................................................................................. 16
9.3. Loss Analysis ................................................................................................................. 17
9.4. Efficiency ....................................................................................................................... 20
9.5. Temperature ................................................................................................................... 21
9.6. EMI................................................................................................................................. 22
10. Revision History ..................................................................................................................... 23

© 2013 Fairchild Semiconductor Corporation 3 FEBFDD850N10LD_CS001 •Rev. 1.0.0
This user guide supports the evaluation kit for the FDD850N10LD. It should be used in
conjunction with the FDD850N10LD datasheets as well as Fairchild’s application notes
and technical support team. Please visit Fairchild’s website at www.fairchildsemi.com.
1. Introduction
This document describes the proposed solution for a driving of LED application using the
BoostPak (FDD850N10LD) for boost topology. The input voltage range is 20.4 V –
27.6 V and there is a single-channel DC output with a constant current of 640 mA at
55 V. This document contains a general description of FDD850N10LD, the converter
specification, a schematic, the bill of materials, and the typical operating characteristics.
1.1. Description
The N-channel MOSFET and NP diode are combined in one 5-lead D-Pak package
produced using Fairchild Semiconductor’s PowerTrench®process tailored to minimize on-
state resistance while maintaining superior switching performance. The diode is a hyper-
fast rectifier with low forward-voltage drop and excellent switching performance. Using the
BoostPak FDD850N10LD in low-power LED backlight driving applications results in
lower profile and cost savings by reducing part count, weight, and PCB size as well as
improving reliability due to lower leakage current than Schottky Barrier Diode (SBD).
1.2. Features
Lower Conduction Resistance :
-RDS(on) = 61 mΩ (Typ.) at VGS = 10 V, ID= 12 A
-RDS(on) = 64 mΩ (Typ.) at VGS = 5.0 V, ID= 12 A
Low Gate Charge (Typ. 22.2 nC)
Low Crss (Typ. 42 pF)
Fast Reverse Recovery Time: trr (Typ.) = 11 ns at IF = 5 A, di/dt = 200 A/µs
Fast Switching
100% Avalanche Tested
Improved dv/dt Capability
RoHS Compliant
1.3. FDD850N10LD Diagrams
Figure 1. Pin Descriptions
Figure 2. Block Diagram

© 2013 Fairchild Semiconductor Corporation 4 FEBFDD850N10LD_CS001 •Rev. 1.0.0
2. Evaluation Board Specifications
All data was measured under the condition, TA=25°C.
Table 1. Summary of Features and Performance
Description
Symbol
Value
Comments
Input Voltage
VIN, MIN.
20.4 V
VIN, TYP.
24.0 V
VIN, MAX.
27.6 V
Switching Frequency
fsw
200 kHz
R35 (kΩ)=15000/fsw (kHz)
Output Voltage / Current
VOUT
55 V
IOUT
0.64 A
Output Power
POUT
35 W
Efficiency
> 92%
Temperature
TBoostPak
TInductor
TMOSFET
< 65°C
Initial Application
LED Backlight

© 2013 Fairchild Semiconductor Corporation 5 FEBFDD850N10LD_CS001 •Rev. 1.0.0
3. Photographs
Figure 3. Top View (114 x 76 mm2)
Figure 4. Bottom View (114 x 76 mm2)

© 2013 Fairchild Semiconductor Corporation 6 FEBFDD850N10LD_CS001 •Rev. 1.0.0
4. Printed Circuit Board
Figure 5. Top Side
Figure 6. Bottom Side
114.3mm
76.2mm
114.3mm
63.5mm
114.3mm

© 2013 Fairchild Semiconductor Corporation 7 FEBFDD850N10LD_CS001 •Rev. 1.0.0
5. Schematic
Figure 7. Evaluation Board Schematic

© 2013 Fairchild Semiconductor Corporation 8 FEBFDD850N10LD_CS001 •Rev. 1.0.0
6. Bill of Materials
Item
No.
Reference
Part No.
Qty.
Description
Manufacturer
1
Q11
FDD850N10LD
1
BoostPak, D-Pak 5L
Fairchild
Semiconductor
2
Q12
FDD120AN15A0
1
150 V / 14 A / 120 Ω, D-Pak
Fairchild
Semiconductor
3
Q13
KTD1624
1
3 A / 60 V / NPN BJT, SOT-89
KEC
4
L1
DYCP1580-470
1
47µH / 0.073 Ω/ 5 A, SMD Inductor
DONGYANG
TELECOM
5
U1
1
Main Controller
6
D1,D2
BAT54HT1G
2
0.2 A / 30 V Small Signal Diode,
SOD-323
Fairchild
Semiconductor
7
ZD1
MM3Z12VC
1
12 V / 200 mW Zener Diode, SOD-
323F
Fairchild
Semiconductor
8
C1
NXH35VB330MTPRB
1
330 µF / 35 V Electrolytic Capacitor
Samyoung
9
C2, C4, C5, C12,
C13, C15, C16,
C27
GRM21BR71H105KA12
8
1 µF / 50 V SMD Capacitor 2012
Murata
10
C3
GRM31CR71H475KA12
1
4.7 µF / 50 V SMD Capacitor 3216
Murata
11
C6, C10, C11,
C17, C18, C19
GRM188R71H102KA01
6
1 nF / 50 V SMD Capacitor 1608
Murata
12
C7
GRM188R71E221KA01
1
220 pF / 25 V SMD Capacitor 1608
Murata
13
C14
NXQ100VB100MTPRB
1
100 µF / 100 V Electrolytic Capacitor
Samyoung
14
C20, C21, C23,
C26, C28, C29,
C30, C31
GRM188R71E105KA12
8
1 µF / 25 V SMD Capacitor 1608
Murata
15
C24, C25
GRM188R71E154KA01
2
150 nF / 25 V SMD Capacitor 1608
Murata
16
R1, R25, R26,
R27, R28
MCR10ERTJ104
5
100 kΩSMD Resistor 2012
Rhom
17
R2
MCR10ERTJ683
1
68 kΩSMD Resistor 2012
Rhom
18
R3, R4
MCR10ERTJ623
2
62 kΩSMD Resistor 2012
Rhom
19
R5, R44
MCR03ERTF30R0
2
30 ΩSMD Resistor 1608
Rhom
20
R6
MCR03ERTJ5R6
1
5.6 ΩSMD Resistor 1608
Rhom
21
R7
MCR03ERTF1002
1
10 kΩSMD Resistor 1608
Rhom
22
R8, R9, R10, R11,
R12, R13, R14
MCR10ERTJ1R0
7
1 ΩSMD Resistor 2012
Rhom
23
R22, R23, R24
MCR10ERTJ100
3
10 ΩSMD Resistor 2012
Rhom
24
R29
MCR03ERTF1103
1
110 kΩSMD Resistor 1608
Rhom
25
R30, R54, R55
MCR03ERTF1003
3
100 kΩSMD Resistor 1608
Rhom
26
R31, R32, R36,
R37, R38, R53,
R58
MCR03ERTF2002
7
20 kΩSMD Resistor 1608
Rhom
27
R33
MCR03ERTF6201
1
6.2 kΩSMD Resistor 1608
Rhom
28
R34, R56
MCR03ERTF1000
2
100 ΩSMD Resistor 1608
Rhom
29
R35
MCR03ERTF7502
1
75 kΩSMD Resistor 1608
Rhom

© 2013 Fairchild Semiconductor Corporation 9 FEBFDD850N10LD_CS001 •Rev. 1.0.0
Item
No.
Reference
Part No.
Qty.
Description
Manufacturer
30
R40, R43
MCR03ERTF3002
2
30 kΩSMD Resistor 1608
Rhom
31
R41, R42
MCR03ERTF0000
2
0 ΩSMD Resistor 1608
Rhom
32
R45, R46, R47,
R48, R49
MCR10ERTJ7R5
5
7.5 ΩSMD Resistor 2012
Rhom
33
R57
MCR03ERTF5102
1
51 kΩSMD Resistor 1608
Rhom
34
R59, R60
MCR03ERTF5101
2
5.1 kΩSMD Resistor 1608
Rhom
35
R61, R62, R63,
R64, R65, R66
MCR10ERTJ911
6
910 ΩSMD Resistor 2012
Rhom
36
CON1
DG301_5.0_2P
1
2-Pin Terminal Block for Vin
DEGSON
ELECTRONICS
37
CON2
DG301_5.0_3P
1
3-Pin Terminal Block for LED
DEGSON
ELECTRONICS
38
SW1
SS12E17
1
1P2T Switch
VIMEX
39
F1
1
IF=4 A

© 2013 Fairchild Semiconductor Corporation 10 FEBFDD850N10LD_CS001 •Rev. 1.0.0
7. Inductor Specifications
Manufacturer: DONGYANG TELECOM CO., LTD.
HEAD OFFICE & FACTORY
942-5, Dohwa-Dong, Nam-gu,
Incheon, Korea
TEL : [phone]
FAX : [phone]
China Factory
No.28 Feng Huang Street,
Weifang Shandong, CHINA
TEL : [phone]
FAX : [phone]
Thailand Factory
3/3 Moo. 1 T. Napradoo
A.Phantong Chonburi
TEL : [phone]
FAX : [phone]
Part No : DYCP1580-470
Figure 8. Inductor Specification & Construction
(unit : mm)
Top view
Front view
Bottom view
Figure 9. Dimension Specification
Table 2. Winding Specifications
No.
Winding
Pin (S F)
Wire
Turns
Winding Method
P1
1 3
0.35 Φ * 2
21.5 ± 2.0
Solenoid Winding
2 4
Table 3. Electrical Characteristics
Pin
Specification
Inductance
1, 2 –3, 4
47.0 µH
Resistance
0.073 Ω
Maximum Current
5.0 A
S : 1, 2
F : 3, 4
: WINDING START POINT

© 2013 Fairchild Semiconductor Corporation 11 FEBFDD850N10LD_CS001 •Rev. 1.0.0
8. Test Conditions & Test Equipment
Table 4. Test Conditions & Test Equipment
Evaluation Board #
FEBFDD850N10LD_CS001
Test Date
Test Temperature
TA=25°C
Test Equipments
DC Power Supply: H-3005D by FinePower
Power Analyzer: PM3000A by Voltech
Load: 100 W 100 ΩJ Adjustable Resistor
Oscilloscope: DPO7104 by Tectronix
Passive voltage probe - P6139
Differential high voltage probe - P5205
Current probe : TCP0030
Thermometer: Therma CAM SC640 by FLIR SYSTEMS
Figure 10. Test Block Diagram
Oscilloscope
(DPO7104)
Power Analyzer
(PM3000A)
DC Power Supply
(H-3005D)
V
A
V
A
Power Resistor
(100W 85Ω, 100Ω)

© 2013 Fairchild Semiconductor Corporation 12 FEBFDD850N10LD_CS001 •Rev. 1.0.0
9. Performance of Evaluation Board
9.1. Switching Waveforms
Test Conditions
Connect the power resistor (85 Ω) to CON2 and measure the voltage and current stress
on the BoostPak (FDD850N10LD) under the specified conditions below.
Table 5. Test Result
Input Voltage (V)
Remarks
20.4
24
27.6
Power On
MOSFET
Vds (V)
62.4
62.4
63.2
Diode
Vca (V)
69.6
69.6
68.8
Inductor
IL_max (A)
2.56
2.36
2.20
IL_min (A)
0.00
0.08
0.04
Normal
MOSFET
Vds (V)
64.0
64.0
64.0
Diode
Vca (V)
76.8
74.4
72.0
Inductor
IL_max (A)
2.60
2.36
2.20
IL_min (A)
0.96
0.68
0.48
Power Off
MOSFET
Vds (V)
64.8
63.2
63.2
Diode
Vca (V)
75.2
73.6
72.0
Inductor
IL_max (A)
2.68
2.48
2.24
IL_min (A)
-0.20
-0.20
-0.24

© 2013 Fairchild Semiconductor Corporation 13 FEBFDD850N10LD_CS001 •Rev. 1.0.0
9.1.1. Power On
Waveforms: C1 (Vgs: 5 V/div), C2 (Vds: 20 V/div), C3 (IL: 1 A/div),
C4 (Vka: 20 V/div), Time (20 ms/div)
Figure 11. VIN=20.4 V
Figure 12. VIN=24 V
Figure 13. VIN=24 V

© 2013 Fairchild Semiconductor Corporation 14 FEBFDD850N10LD_CS001 •Rev. 1.0.0
9.1.2. Normal
Waveforms: C1 (Vgs: 5 V/div), C2 (Vds: 20 V/div), C3 (IL: 1 A/div), C4 (Vka: 20 V/div),
Time (10 µs/div)
Figure 14. VIN=20.4 V
Figure 15. VIN=24 V
Figure 16. VIN=24 V

© 2013 Fairchild Semiconductor Corporation 15 FEBFDD850N10LD_CS001 •Rev. 1.0.0
9.1.3. Power Off
Waveforms: C1 (Vgs: 5 V/div), C2 (Vds: 20 V/div), C3 (IL: 1 A/div), C4 (Vka: 20 V/div),
Time (50 ms/div)
Figure 17. VIN=20.4 V
Figure 18. VIN=24 V
Figure 19. VIN=24 V

© 2013 Fairchild Semiconductor Corporation 16 FEBFDD850N10LD_CS001 •Rev. 1.0.0
9.2. Output Regulation Characteristics
Test Conditions
Connect the power resistor (85 Ω, 100 Ω) to the CON2 and measure the output voltage
and current on the BoostPak (FDD850N10LD) after 30 minutes aging.
Table 6. Test Results
Input
Voltage (V)
Pout=35 W
Pout=45 W
Remarks
VOUT (V)
IOUT (A)
VOUT (V)
IOUT (A)
20.4
55.39
0.639
64.83
0.640
24.0
55.42
0.639
64.97
0.639
27.6
55.43
0.639
65.04
0.642
Figure 20. Output Regulation Characteristics
50.00
52.00
54.00
56.00
58.00
60.00
62.00
64.00
66.00
68.00
70.00
20.4
24
27.6
Output voltage [V]
Input Voltage, Vin [V]
Vout=55V(35W)
Vout=65V(45W)

© 2013 Fairchild Semiconductor Corporation 17 FEBFDD850N10LD_CS001 •Rev. 1.0.0
9.3. Loss Analysis
Test Conditions
Connect the power resistor (85 Ω) to the CON2 and measure the output voltage and
current on the BoostPak (FDD850N10LD) after 30 minutes aging.
Table 7. Test Results
Input
Voltage
(V)
MOSFET
Diode
Total
PD
(W)
PON
(W)
POFF
(W)
PCOND
(W)
PTOT
(W)
PON
(W)
POFF
(W)
PCOND
(W)
PTOT
(W)
20.4
0.17
0.11
0.14
0.42
0.02
0.38
0.53
0.93
1.34
24
0.15
0.09
0.09
0.34
0.02
0.37
0.52
0.91
1.24
27.6
0.13
0.09
0.07
0.28
0.02
0.36
0.52
0.90
1.18
Figure 21. Loss Analysis for VIN=24 V
Figure 22. Loss Distribution for VIN=24 V
Eon_M
45%
Eoff_M
28%
Econd_M
27%
Power Loss of MOSFET
Eon_D
2%
Eoff_D
41%
Econd_D
57%
Power Loss of Diode
Eon_M
12%
Eoff_M
8%
Econd_M
7%
Eon_D
2%
Eoff_D
30%
Econd_D
41%
Total Power Loss
0.00
0.20
0.40
0.60
0.80
1.00
MOSFET
Diode
Conduction loss
0.09
0.52
Turn off loss
0.09
0.37
Turn on loss
0.15
0.02
Power Loss [W]
Power distribution

© 2013 Fairchild Semiconductor Corporation 18 FEBFDD850N10LD_CS001 •Rev. 1.0.0
Figure 23. Loss Comparison for Input Voltage, VIN
Waveforms: C1 (Vgs: 5 V/div), C2 (Vds: 20 V/div), C3 (Id: 1 A/div)
4-Period Waveforms, Time (2 µs/div)
Conduction Waveforms, Time (500 ns/div)
Turn-On Waveforms, Time (50 ns/div)
Turn-Off Waveforms, Time (50 ns/div)
Figure 24. MOSFET Waveforms for VIN=24 V
0.00
0.20
0.40
0.60
0.80
1.00
1.20
1.40
1.60
1.80
20.4
24
27.6
Power Loss [W]
Input Voltage, Vin [V]
MOSFET
Diode
Total loss

© 2013 Fairchild Semiconductor Corporation 19 FEBFDD850N10LD_CS001 •Rev. 1.0.0
Waveforms : C1(Vgs:5V/div), C4(Vak:20V/div), M2(Ia:1A/div)
4-Period Waveforms, Time (2 µs/div)
Conduction Waveforms, Time (500 ns/div)
Turn-On Waveforms, Time (50 ns/div)
Turn-Off Waveforms, Time (50 ns/div)
Figure 25. Diode Waveforms for VIN=24 V