ON Semiconductor NCP5106BA36WGEVB User manual

©Semiconductor Components Industries, LLC, 2012
November, 2012 −Rev. 1
1Publication Order Number:
EVBUM2154/D
NCP5106BA36WGEVB
NCP5106B 36W Ballast
Evaluation Board User's
Manual
Introduction
This document describes how the NCP5106B driver can
be implemented in a ballast application. The scope of this
application note is to highlight the NCP5106B driver and not
to explain or detailed how to build electronic ballast.
The NCP5106B is a high voltage power MOSFET driver
providing two outputs for direct drive of 2 N−channel power
MOSFETs arranged in a half−bridge configuration with a
cross conduction protection between the 2 channels.
It uses the bootstrap technique to insure a proper drive of
the High−side power switch. The driver works with 2
independent inputs to accommodate any topology
(including half−bridge, asymmetrical half−bridge, active
clamp and full−bridge).
Evaluation Board Specification
•Input range : 85 −145 Vac or 184 −265 Vac
•Ballast Output power : 36 W (type PL−L 36W)
♦Pre−Heating current : 295 mA
♦Pre−heating time : 1 second
♦Nominal current : 414 mA
BEFORE PLUGGING IN THE DEMO BOARD, MAKE
SURE THE JUMPER IS ON THE CORRECT POSITION:
IF J2 IS USED, THEN Vin MUST BE LOWER THAN
145 Vac.
Detailed Operation
The lamp ballast is powered via a half bridge
configuration. The 2 power MOSFETs are driven with the
NCP5106B driver. The driver is supplied by the VCC rail,
and the high side driver is supplied by the bootstrap diode:
when the low side power MOSFET (Q2) is switched ON, the
BRIDGE pin is pulled down to the ground, thus the capacitor
connected between BRIDGE pin and VBOOT pin is
refuelled via the diode D3 and the resistor R5 connected to
VCC. When Q2 is switched OFF the bootstrap capacitor C6
supplies the high side driver with a voltage equal to VCC
level minus the D3 forward voltage diode. Given the
NCP5106B architecture, it is up to the designer to generate
the right input signal polarity with the desired dead time.
Nevertheless the NCP5106B provides a cross conduction
protection with an internal fixed dead time. Thus in case of
overlap on the inputs signal, the both outputs driver will be
kept in low state, or a minimum of 100 ns dead time will be
applied between the both drivers.
The 555 timer generates only one signal for the driver, the
second one, in opposite phase is built by inserting a NPN
transistor (Q4) for inverting the signal. Afterwards the dead
time is built with R2, D2 and C13 (typically 400 ns, see
Figure 2).
Figure 1. Evaluation Board Photo
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EVAL BOARD USER’S MANUAL

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DRV_HI
(5 V/div)
DRV_LO
(5 V/div)
Time
(400 ns/div)
Dead time 40 0 ns
Figure 2. Dead Time Between the High and Low Side Driver
IN_HI
(10 V/div)
DRV_HI
(10 V/div)
IN_LO
(10 V/div)
DRV_LO
(10 V/div)
Time
(4 ms/div)
Figure 3. Input Output Timing Diagram
Tube
Voltage
(100 V /div)
Tube
current
(0.5 V/div)
Tube
Power
(50 W/div)
Figure 4. Tube Signals
Tube average
power = 32 W

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Figure 5. Evaluation Board Schematic
R3 82k 2W
R12
27k
R11 47k
R10 33k
R15
22k R16
68k
R13 15k
R2 110k R6
10R
R7 10R
F1
T500 mA
VCC
1
IN_HI
2
IN_LO
3
GND
4DRV_LO 5
BRIDGE 6
DRV_HI 7
VBOOT 8
U2
NCP5106B
TRIG
2
Q3
R
4
CVolt
5THR 6
DIS 7
VCC 8 GND
1
U1
TLC555C
GND
Q4
BC547B
Q3 BC547B
GND
VCC GND
VCC
VCC
GND
R1 22k
D2
1N4148
GND GND
GND GND
D3
1N4936 R5
10R
L1
1.4mH
B1 BALLAST
GND
GND GND
GND
VCC
GND
GND
Q1 IRF840LC
Q2 IRF840LC
C3 220uF
C5 100nF
C6 100nF
C12 18pF C13
18pF
C11 10nF
C9 220pF
C10 220pF
C15 6.8nF 1kV
C7 220nF 400V C8 220nF 400V
C1 47 uF 400 V SerieM Panasonic
C17
100 uF
C4
4.7uF
1 2
J1
CON2
3
1
4
2
PT1
DF06
D4
5V1
D1 15V 1.3W
R14 390k
GND
C16 NC
C14
220pF/400V
D6
1N4936
D5
1N4936
GND
R8 10k
R9 10k
GND
1
2
J2
US−jumper
C1 47 uF 400 V SerieM Panasonic
R4 82k 2W

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Figure 6. PCB Printout: Top and Bottom View

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BILL OF MATERIALS
Designator Qty Description Value
Toler-
ance Footprint Manufacturer
Manufacturer Part
Number
Substi-
tution
Allowed
Lead
Free
B1 2 Connector 2/” - rad5.08mm Weidmuller PM5.08/2/90 Yes Yes
C1, C2 2 Electrolytic
Capacitor
47 uF, 400 V 20% radial Panasonic ECA2GM470 Yes Yes
C11 1 Capacitor 10 nF, 100 V 10% radial Murata RPER72A103K2M1B05A Yes Yes
C12, C13 2 Capacitor 18 pF, 100 V 2% radial BC Comp. 2222-682-10189 Yes Yes
C14 1 Capacitor 220 pF, 1000 V 10% radial Panasonic PICECKA3A221KBP Yes Yes
C15 1 Capacitor 6.8 nF, 1600 V 5% radial BC Comp. 2222 375 30682 Yes Yes
C16 1 Capacitor - - radial - - Yes Yes
C17 1 Electrolytic
Capacitor
100 uF, 16 V 20% radial Panasonic ECA1CM101 Yes Ye s
C3 1 Electrolytic
Capacitor
220 uF, 16 V 20% radial BC Comp. 2222-13555221 Yes Yes
C4 1 Electrolytic
Capacitor
4.7 uF, 63 V 20% radial Nippon
Chemi-Con
SMEVB4.7UF63V Yes Yes
C5, C6 2 Capacitor 100 nF, 50 V 10% radial Murata RPER71H104K2M1A05U Yes Yes
C7, C8 2 Capacitor 220 nF, 400 V 10% radial Vishay MKT1822422405 Yes Yes
C9, C10 2 Capacitor 220 pF, 100 V 5% radial Murata RPE5C2A221J2M1Z05A Yes Ye s
D1 1 Zener Diode 15 V, 1.3 W 5% axial Vishay BZX85C15 Yes Yes
D2 1 High-Speed
Diode
0.2 A, 75 V 0% axial Philips
Semiconductor
1N4148 Yes Yes
D3, D5, D6 3Rectifier Diode 1 A, 400 V 0% axial ON
Semiconductor
1N4936G Yes Yes
D4 1 Zener Diode 5.1 V, 1.3 W 5% axial Vishay BZX85C5V1 Yes Yes
F1 1 Fuse 500 mA, 250 V 0% radial Schurter 0034-6612 Yes Yes
J1 1 Connector 2/” - rad5.08mm Weidmuller PM5.08/2/90 Yes Yes
J2 1 Resistor 0 W, 0.25 W 0% axial Multicomp MCF0.25W0R Yes Yes
L1 1 Inductor 1.4 mH - - Vogt 53-044 No Yes
PT1 1 Diode Bridge 600 V, 1 A 0% dil General
Semiconductor
DF06M Yes Yes
Q1, Q2 2Power MOSFET
N-Channel
8 A, 500 V - to220 International
Rectifier
INF840LC Yes Yes
Q3, Q4 2NPN Transistor 100 mA, 45 V - to92 ON
Semiconductor
BC547B Yes Yes
R1, R15 1 Resistor 22 kW, 0.33 W 5% axial Neohm CFR25J22K Yes Ye s
R10 1 Resistor 33 kW, 0.33 W 5% axial Neohm CFR25J33K Yes Yes
R11 1 Resistor 47 kW, 0.33 W 5% axial Neohm CFR25J45K Yes Yes
R12 1 Resistor 27 kW, 0.33 W 5% axial Neohm CFR25J27K Yes Yes
R13 1 Resistor 15 kW, 0.33 W 5% axial Neohm CFR25J15K Yes Yes
R14 1 Resistor 390 kW, 0.33 W 5% axial Neohm CFR25J390K Yes Yes
R16 1 Resistor 68 kW, 0.33 W 5% axial Neohm CFR25J68K Yes Yes
R2 1 Resistor 120 kW, 0.33 W 5% axial Neohm CFR25J120K Ye s Ye s
R3, R4 2 Resistor 82 kW, 3 W 5% axial BC Comp. 232219514823 Yes Yes
R5, R6, R7 3 Resistor 10 W, 0.33 W 5% axial Neohm CFR25J10R Yes Yes
R8, R9 2 Resistor 10 kW, 0.33 W 5% axial Neohm CFR25J10K Yes Yes
U1 1 CMOS IC analog/timer - dip8 Texas
Instruments
TLC555CP No Ye s
U2 1 NCP5106B NCP5106B - dip8 ON
Semiconductor
NCP5106B No Yes

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TEST PROCEDURE FOR THE NCP5106B EVALUATION BOARD
Figure 7. Test Setup
V
A
Vac
J2 jumper
V
A
Rload 200 W
Required Equipment
•AC power source can be able to deliver 230 Vrms or
110 Vrms
•Two volt−meters
•Two ampere−meters
•1 resistive load: 200 W/ 50 W
•One NCP5106B Evaluation Board
Test Procedure
1. First of all check if you need or not the jumper #2
(J2 on the board close the diode bridge). This
jumper must be removed in case of European
mains (230 Vac input voltage) and have to placed
in case of US mains (110 Vac). This jumper is used
to build a voltage doublers just after the bridge
diode in case of US mains input voltage range.
2. Connect the test setup as shown above:
•AC source
•Voltmeter and Ampere meter on the load
•Load on the output
3. Apply 230 Vac if European mains or 110 Vac for
the US mains on the input connector.
4. Compare Iload and Vload with the following table
according your input mains voltage.
5. If you get the correct output and input voltage, you
can now connect a 36 W fluorescent tube on the
output (see the ballast connection figure).
TEST RESULTS:
Input Mains J2 Vin (Vrms) Iin (Arms) Vload (Vrms) Iload (Arms)
European Removed 230 V 278 mA 303 V 370 mA
US Yes →max input
voltage: 132 Vrms
100 V 514 mA 263 V 340 mA
Figure 8. Ballast Connection
V
A
Vac
Input connection
36 W
Tube
Output Connection

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