Texas Instruments TLC5916 User manual

. . .
VLED
GND
SDO
R-EXT
VDD
LE
CLK
SDI
LE
CLK
OE OE
SDI
Controller
OUT0
. . .
3.0V to 5.5V
OUT1
OUT6
OUT7
TLC5917
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Detection Used
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TLC5916 , TLC5917
SLVS695D –JUNE 2007–REVISED JANUARY 2015
TLC591x 8-Channel Constant-Current LED Sink Drivers
1 Features 3 Description
The TLC591x Constant-Current LED Sink Drivers are
1• Eight Constant-Current Output Channels designed to work alone or cascaded. Since each
• Output Current Adjusted Through Single External output is independently controlled, they can be
Resistor programmed to be on or off by the user. The high
• Constant Output Current Range: 3-mA to 120-mA LED voltage (VLED) allows for the use of a single
LED per output or multiple LEDs on a single string.
per Channel With independently controlled outputs supplied with
• Constant Output Current Invariant to Load Voltage constant current, the LEDs can be combined in
Change parallel to create higher currents on a single string.
• Open Load, Short Load and Overtemperature The constant sink current for all channels is set
Detection through a single external resistor. This allows
different LED drivers in the same application to sink
• 256-Step Programmable Global Current Gain various currents which provides optional
• Excellent Output Current Accuracy: implementation of multi-color LEDs. An additional
– Between Channels: < ±3% (Maximum) advantage of the independent outputs is the ability to
– Between ICs: < ±6% (Maximum) leave unused channels floating. The flexibility of the
TLC591x LED drivers is ideal for applications such as
• Fast Response of Output Current (but not limited to): 7-segment displays, scrolling
• 30-MHz Clock Frequency single color displays, gaming machines, white goods,
• Schmitt-Trigger Input video billboards and video panels.
• 3.3-V or 5-V Supply Voltage Device Information(1)
• Maximum LED Voltage 20-V PART NUMBER PACKAGE BODY SIZE (NOM)
• Thermal Shutdown for Overtemperature SOIC (16) 9.90 mm × 3.91 mm
Protection TLC5916 PDIP (16) 19.30 mm × 6.35 mm
TSSOP (16) 5.00 mm × 4.40 mm
2 Applications SOIC (16) 9.90 mm × 3.91 mm
• General LED Lighting Applications TLC5917 PDIP (16) 19.30 mm × 6.35 mm
• LED Display Systems TSSOP (16) 5.00 mm × 4.40 mm
• LED Signage (1) For all available packages, see the orderable addendum at
• Automotive LED Lighting the end of the datasheet.
• White Goods
• Gaming Machines/Entertainment
Single Implementation of TLC5916 / TLC5917 Device
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.

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Table of Contents
1 Features.................................................................. 19 Detailed Description............................................ 13
9.1 Overview................................................................. 13
2 Applications ........................................................... 19.2 Functional Block Diagram....................................... 14
3 Description............................................................. 19.3 Feature Description................................................. 14
4 Revision History..................................................... 29.4 Device Functional Modes........................................ 16
5 Device Comparison Table..................................... 310 Application and Implementation........................ 21
6 Pin Configuration and Functions......................... 310.1 Application Information.......................................... 21
7 Specifications......................................................... 410.2 Typical Application................................................ 24
7.1 Absolute Maximum Ratings ...................................... 411 Power Supply Recommendations ..................... 27
7.2 ESD Ratings.............................................................. 412 Layout................................................................... 27
7.3 Recommended Operating Conditions....................... 412.1 Layout Guidelines ................................................. 27
7.4 Thermal Information.................................................. 412.2 Layout Example .................................................... 27
7.5 Electrical Characteristics: VDD = 3 V......................... 513 Device and Documentation Support ................. 29
7.6 Electrical Characteristics: VDD = 5.5 V...................... 613.1 Related Links ........................................................ 29
7.7 Switching Characteristics: VDD = 3 V........................ 713.2 Trademarks........................................................... 29
7.8 Switching Characteristics: VDD = 5.5 V..................... 813.3 Electrostatic Discharge Caution............................ 29
7.9 Timing Requirements................................................ 913.4 Glossary................................................................ 29
7.10 Typical Characteristics............................................ 914 Mechanical, Packaging, and Orderable
8 Parameter Measurement Information ................ 10 Information ........................................................... 29
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision C (February 2011) to Revision D Page
• Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional
Modes,Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1
Changes from Revision B (February 2011) to Revision C Page
• Replaced the Power Dissipation and Thermal Impedance table with the Thermal Information tables.................................. 4
Changes from Revision A (November 2010) to Revision B Page
• Added Maximum LED Voltage 20-V to Features. .................................................................................................................. 1
• Added Abstract section........................................................................................................................................................... 1
• Changed resistor value in Single Implementation diagram from 840Ωto 720Ω.................................................................. 13
• Changed Default Relationship Curve to reflect correct data. .............................................................................................. 21
• Changed resistor value in Cascading Implementation diagram from 840Ωto 720Ω........................................................... 22
• Changed resistor value in Single Implementation diagram from 840Ωto 720Ω.................................................................. 24
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1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
GND
SDI
CLK
LE(ED1)
OUT0
OUT1
OUT2
OUT3
VDD
R-EXT
SDO
OE(ED2)
OUT7
OUT6
OUT5
OUT4
D, N, OR PW PACKAGE
(TOP VIEW)
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5 Device Comparison Table
OVERTEMPERATURE OPEN-LOAD SHORT TO GND SHORT TO VLED
DEVICE(1) DETECTION DETECTION DETECTION DETECTION
TLC5916 X X X —
TLC5917 X X X X
(1) The device has one single error register for all these conditions (one error bit per channel).
6 Pin Configuration and Functions
16-PIN
Pin Functions
PIN I/O DESCRIPTION
NAME NO.
CLK 3 I Clock input for data shift on rising edge
GND 1 – Ground for control logic and current sink
Data strobe input
Serial data is transferred to the respective latch when LE(ED1) is high. The data is latched
LE(ED1) 4 I when LE(ED1) goes low. Also, a control signal input for an Error Detection Mode and Current
Adjust Mode (see Timing Diagram). LE(ED1) has an internal pulldown.
Output enable. When OE(ED2) is active (low), the output drivers are enabled; when
OE(ED2) is high, all output drivers are turned OFF (blanked). Also, a control signal input for
OE(ED2) 13 I an Error Detection Mode and Current Adjust Mode (see Figure 11). OE(ED2) has an internal
pullup.
OUT0 to OUT7 5 to 12 O Constant-current outputs
R-EXT 15 I External Resistor - Connect an external resistor to ground to set the current for all outputs
SDI 2 I Serial-data input to the Shift register
SDO 14 O Serial-data output to the following SDI of next driver IC or to the microcontroller
VDD 16 I Supply voltage
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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VDD Supply voltage 0 7 V
VIInput voltage –0.4 VDD + 0.4 V
VOOutput voltage –0.5 20 V
fclk Clock frequency 25 MHz
IOUT Output current 120 mA
IGND GND terminal current 960 mA
TAOperating free-air temperature –40 125 °C
TJOperating junction temperature –40 150 °C
Tstg Storage temperature –55 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7.2 ESD Ratings VALUE UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±1500
V(ESD) Electrostatic discharge V
Charged-device model (CDM), per JEDEC specification JESD22- ±500
C101(2)
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
MIN MAX UNIT
VDD Supply voltage 3 5.5 V
VOSupply voltage to output pins OUT0–OUT7 20 V
VO≥0.6 V 3
IOOutput current DC test circuit mA
VO≥1 V 120
IOH High-level output current source SDO shorted to GND –1 mA
IOL Low-level output current sink SDO shorted to VCC 1 mA
VIH High-level input voltage CLK, OE(ED2), LE(ED1), and SDI 0.7 × VDD VDD V
VIL Low-level input voltage CLK, OE(ED2), LE(ED1), and SDI 0 0.3 × VDD V
7.4 Thermal Information TLC5916 TLC5917
THERMAL METRIC(1) 16 PINS 16 PINS UNIT
D N PW D N PW
RθJA Junction-to-ambient thermal resistance 87.4 51.8 113.9 87.4 51.8 114.8
RθJC(top) Junction-to-case (top) thermal resistance 48.1 39.1 35.2 48.1 39.1 35.9
RθJB Junction-to-board thermal resistance 44.4 31.8 59.2 44.4 31.8 59.8 °C/W
ψJT Junction-to-top characterization parameter 12.5 23.9 1.3 12.5 23.9 1.3
ψJB Junction-to-board characterization parameter 44.2 31.7 58.5 44.2 31.7 59.2
RθJC(bot) Junction-to-case (bottom) thermal resistance — — — — — —
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
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7.5 Electrical Characteristics: VDD = 3 V
VDD = 3 V, TJ= –40°C to 125°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
VDD Input voltage 3 5.5 V
VOSupply voltage to the output pins 20 V
VO≥0.6 V 3
IOOutput current mA
VO≥1 V 120
IOH High-level output current, source –1 mA
IOL Low-level output current, sink 1 mA
VIH High-level input voltage 0.7 × VDD VDD V
VIL Low-level input voltage GND 0.3 × VDD V
TJ= 25°C 0.5
Ileak Output leakage current VOH = 17 V μA
TJ= 125°C 2
VOH High-level output voltage SDO, IOL = –1 mA VDD – 0.4 V
VOL Low-level output voltage SDO, IOH = 1 mA 0.4 V
VOUT = 0.6 V, Rext = 720 Ω,
Output current 1 26 mA
CG = 0.992
IOL = 26 mA, VO= 0.6 V, Rext = 720 Ω,
IO(1) Output current error, die-die ±3% ±6%
TJ= 25°C
Output current skew, channel-to- IOL = 26 mA, VO= 0.6 V, Rext = 720 Ω,±1.5% ±3%
channel TJ= 25°C
Output current 2 VO= 0.8 V, Rext = 360 Ω, CG = 0.992 52 mA
IOL = 52 mA, VO= 0.8 V, Rext = 360 Ω,
Output current error, die-die ±2% ±6%
IO(2) TJ= 25°C
Output current skew, channel-to- IOL = 52 mA, VO= 0.8 V, Rext = 360 Ω,±1.5% ±3%
channel TJ= 25°C
VO= 1 V to 3 V, IO= 26 mA ±0.1
IOUT vs Output current vs %/V
VDD = 3.0 V to 5.5 V,
VOUT output voltage regulation ±1
IO= 26 mA/120 mA
Pullup resistance OE(ED2) 500 kΩ
Pulldown resistance LE(ED1) 500 kΩ
Tsd Overtemperature shutdown(2) 150 175 200 °C
Thys Restart temperature hysteresis(2) 15 °C
Threshold current for open error 0.5 ×
IOUT,Th IOUT,target = 3 mA to 120 mA
detection Itarget %
Trigger threshold voltage for
VOUT,TTh short-error detection IOUT,target = 3 mA to 120 mA 2.5 2.7 3.1 V
(TLC5917 only)
Return threshold voltage for
VOUT, RTh short-error detection IOUT,target = 3 mA to 120 mA 2.2 V
(TLC5917 only) Rext = Open 5 10
Rext = 720 Ω8 14
IDD Supply current mA
Rext = 360 Ω11 18
Rext = 180 Ω16 22
(1) Typical values represent the likely parametric nominal values determined at the time of characterization. Typical values depend on the
application and configuration and may vary over time. Typical values are not ensured on production material.
(2) Specified by design.
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7.6 Electrical Characteristics: VDD = 5.5 V
VDD = 5.5 V, TJ= –40°C to 125°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
VDD Input voltage 3 5.5 V
VOSupply voltage to the output pins 20 V
VO≥0.6 V 3
IOOutput current mA
VO≥1 V 120
IOH High-level output current, source –1 mA
IOL Low-level output current, sink 1 mA
VIH High-level input voltage 0.7 × VDD VDD V
VIL Low-level input voltage GND 0.3 × VDD V
TJ= 25°C 0.5
Ileak Output leakage current VOH = 17 V μA
TJ= 125°C 2
VOH High-level output voltage SDO, IOL = –1 mA VDD – 0.4 V
VOL Low-level output voltage SDO, IOH = 1 mA 0.4 V
VOUT = 0.6 V, Rext = 720 Ω,
Output current 1 26 mA
CG = 0.992
IOL = 26 mA, VO= 0.6 V, Rext = 720 Ω,
IO(1) Output current error, die-die ±3% ±6%
TJ= 25°C
Output current skew, channel-to- IOL = 26 mA, VO= 0.6 V, Rext = 720 Ω,±1.5% ±3%
channel TJ= 25°C
Output current 2 VO= 0.8 V, Rext = 360 Ω, CG = 0.992 52 mA
IOL = 52 mA, VO= 0.8 V, Rext = 360 Ω,
Output current error, die-die ±2% ±6%
IO(2) TJ= 25°C
Output current skew, channel-to- IOL = 52 mA, VO= 0.8 V, Rext = 360 Ω,±1.5% ±3%
channel TJ= 25°C
VO= 1 V to 3 V , IO= 26 mA ±0.1
IOUT vs Output current vs %/V
VDD = 3.0 V to 5.5 V,
VOUT output voltage regulation ±1
IO= 26 mA/120 mA
Pullup resistance OE(ED2), 500 kΩ
Pulldown resistance LE(ED1), 500 kΩ
Tsd Overtemperature shutdown(2) 150 175 200 °C
Thys Restart temperature hysteresis(2) 15 °C
Threshold current for open error 0.5 ×
IOUT,Th IOUT,target = 3 mA to 120 mA
detection Itarget%
Trigger threshold voltage for
VOUT,TTh short-error detection IOUT,target = 3 mA to 120 mA 2.5 2.7 3.1 V
(TLC5917 only)
Return threshold voltage for
VOUT, RTh short-error detection IOUT,target = 3 mA to 120 mA 2.2 V
(TLC5917 only) Rext = Open 6 10
Rext = 720 Ω11 14
IDD Supply current mA
Rext = 360 Ω13 18
Rext = 180 Ω19 24
(1) Typical values represent the likely parametric nominal values determined at the time of characterization. Typical values depend on the
application and configuration and may vary over time. Typical values are not ensured on production material.
(2) Specified by design.
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7.7 Switching Characteristics: VDD = 3 V
VDD = 3 V, TJ= –40°C to 125°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
tPLH1 Low-to-high propagation delay time, CLK to OUTn 40 65 95 ns
tPLH2 Low-to-high propagation delay time, LE(ED1) to OUTn 40 65 95 ns
tPLH3 Low-to-high propagation delay time, OE(ED2) to OUTn 40 65 95 ns
tPLH4 Low-to-high propagation delay time, CLK to SDO 12 20 30 ns
tPHL1 High-to-low propagation delay time, CLK to OUTn 300 365 ns
tPHL2 High-to-low propagation delay time, LE(ED1) to OUTn 300 365 ns
tPHL3 High-to-low propagation delay time, OE(ED2) to OUTn 300 365 ns
tPHL4 High-to-low propagation delay time, CLK to SDO 12 20 30 ns
tw(CLK) Pulse duration, CLK 20 ns
tw(L) Pulse duration, LE(ED1) 20 ns
tw(OE) Pulse duration, OE(ED2) 500 ns
VIH = VDD, VIL = GND,
tw(ED2) Pulse duration, OE(ED2) in Error Detection Mode 2 μs
Rext = 360 Ω, VL= 4 V,
RL= 44 Ω, CL= 10 pF,
th(ED1,ED2) Hold time, LE(ED1) and OE(ED2) 10 ns
CG = 0.992
th(D) Hold time, SDI 2 ns
tsu(D,ED1) Setup time, SDI, LE(ED1) 3 ns
tsu(ED2) Setup time, OE(ED2) 8.5 ns
th(L) Hold time, LE(ED1), Normal Mode 15 ns
tsu(L) Setup time, LE(ED1), Normal Mode 15 ns
trRise time, CLK(2) 500 ns
tfFall time, CLK(2) 500 ns
tor Rise time, outputs (off) 40 85 105 ns
tor Rise time, outputs (off), TJ= 25°C 83 100 ns
tof Rise time, outputs (on) 100 280 370 ns
tof Rise time, outputs (on), TJ= 25°C 170 225 ns
fCLK Clock frequency Cascade operation 30 MHz
(1) Typical values represent the likely parametric nominal values determined at the time of characterization. Typical values depend on the
application and configuration and may vary over time. Typical values are not ensured on production material.
(2) If the devices are connected in cascade and tror tfis large, it may be critical to achieve the timing required for data transfer between two
cascaded devices.
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7.8 Switching Characteristics: VDD = 5.5 V
VDD = 5.5 V, TJ= –40°C to 125°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
tPLH1 Low-to-high propagation delay time, CLK to OUTn 40 65 95 ns
tPLH2 Low-to-high propagation delay time, LE(ED1) to OUTn 40 65 95 ns
tPLH3 Low-to-high propagation delay time, OE(ED2) to OUTn 40 65 95 ns
tPLH4 Low-to-high propagation delay time, CLK to SDO 8 20 30 ns
tPHL1 High-to-low propagation delay time, CLK to OUTn 300 365 ns
tPHL2 High-to-low propagation delay time, LE(ED1) to OUTn 300 365 ns
tPHL3 High-to-low propagation delay time, OE(ED2) to OUTn 300 365 ns
tPHL4 High-to-low propagation delay time, CLK to SDO 8 20 30 ns
tw(CLK) Pulse duration, CLK 20 ns
tw(L) Pulse duration, LE(ED1) 20 ns
tw(OE) Pulse duration, OE(ED2) 500 ns
VIH = VDD, VIL = GND,
tw(ED2) Pulse duration, OE(ED2) in Error Detection Mode 2 μs
Rext = 360 Ω, VL= 4 V,
RL= 44 Ω, CL= 10 pF,
th(D,ED1,ED2) Hold time, SDI, LE(ED1), and OE(ED2) 10 ns
CG = 0.992
th(D) Hold time, SDI 2 ns
tsu(D,ED1) Setup time, SDI, LE(ED1) 3 ns
tsu(ED2) Setup time, OE(ED2) 8.5 ns
th(L) Hold time, LE(ED1), Normal Mode 15 ns
tsu(L) Setup time, LE(ED1), Normal Mode 15 ns
trRise time, CLK(2) 500 ns
tfFall time, CLK(2) 500 ns
tor Rise time, outputs (off) 40 85 105 ns
tor Rise time, outputs (off), TJ= 25°C 83 100 ns
tof Rise time, outputs (on) 100 280 370 ns
tof Rise time, outputs (on), TJ= 25°C 170 225 ns
fCLK Clock frequency Cascade operation 30 MHz
(1) Typical values represent the likely parametric nominal values determined at the time of characterization. Typical values depend on the
application and configuration and may vary over time. Typical values are not ensured on production material.
(2) If the devices are connected in cascade and tror tfis large, it may be critical to achieve the timing required for data transfer between two
cascaded devices.
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OE
OUT7
Turn on only one channel
Channel 8
0
25
50
75
100
125
150
0 0.5 1 1.5 2 2.5 3
Output Voltage (V)
Output Current (mA)
Temperature = 25°C
IO= 80 mA
IO= 40 mA
IO= 20 mA
IO= 60 mA
IO= 5 mA
IO= 100 mA
IO= 120 mA
OE
OUT1
Turn on only one channel
Channel 1
LE = 5 V (active)
= GND (active)OE
CLK
OUTn
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7.9 Timing Requirements
VDD = 3 V to 5.5 V (unless otherwise noted) MIN MAX UNIT
tw(L) LE(ED1) pulse duration Normal Mode 20 ns
tw(CLK) CLK pulse duration Normal Mode 20 ns
Normal Mode, IOUT < 60 mA 500
tw(OE) OE(ED2) pulse duration ns
Normal Mode, IOUT > 60 mA 700
tsu(D) Setup time for SDI Normal Mode 3 ns
th(D) Hold time for SDI Normal Mode 2 ns
tsu(L) Setup time for LE(ED1) Normal Mode 15 ns
th(L) Hold time for LE(ED1) Normal Mode 15 ns
tw(CLK) CLK pulse duration Error Detection Mode 20 ns
tw(ED2) OE(ED2) pulse duration Error Detection Mode 2000 ns
tsu(ED1) Setup time for LE(ED1) Error Detection Mode 4 ns
th(ED1) Hold time for LE(ED1) Error Detection Mode 10 ns
tsu(ED2) Setup time for OE(ED2) Error Detection Mode 6 ns
th(ED2) Hold time for OE(ED2) Error Detection Mode 10 ns
fCLK Clock frequency Cascade operation 30 MHz
7.10 Typical Characteristics
Figure 1. Response Time, CLK to OUTn Figure 2. Response Time, OE to OUT1
Figure 4. Output Current vs Output Voltage
Figure 3. Response Time, OE to OUT7
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V , V
IH IL
Logic Input
Waveform
V = 5 V
IH
V = 0V
IL
IOUT
RL
CL
Iref
VDD
OE(ED2)
CLK
LE(ED1)
SDI
R-EXT GND SDO
OUT7
OUT0
IDD
Function
Generator
VL
CL
IDD
I , I
IH IL
V ,V
IH IL
Iref
IOUT
VDD
OE(ED2)
CLK
LE(ED1)
SDI
R-EXT GND SDO
OUT7
OUT0
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8 Parameter Measurement Information
Figure 5. Test Circuit for Electrical Characteristics
Figure 6. Test Circuit for Switching Characteristics
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