Texas Instruments LMG1205HBEVM User manual

Using the LMG1205HBEVM
User's Guide
Literature Number: SNVU552
March 2017

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Table of Contents
Contents
Preface ........................................................................................................................................ 4
1 Description.......................................................................................................................... 6
1.1 EVM Features ............................................................................................................ 6
1.2 Typical Applications...................................................................................................... 7
2 EVM Kit Contents................................................................................................................. 7
3 Electrical Performance Specifications .................................................................................... 7
4 EVM Schematic.................................................................................................................... 8
5 Test Setup........................................................................................................................... 9
5.1 Test Equipment........................................................................................................... 9
5.2 List of Test Points....................................................................................................... 10
5.3 List of Terminals ........................................................................................................ 11
5.4 EVM Connections ...................................................................................................... 11
6 Test Procedure................................................................................................................... 12
6.1 Power-Up Procedure................................................................................................... 12
6.2 Shutdown Procedure................................................................................................... 13
7 Switching Waveforms ......................................................................................................... 13
8 EVM Assembly Drawing and PCB Layout.............................................................................. 15
9 List of Materials ................................................................................................................. 16

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List of Figures
List of Figures
1 LMG1205HBEVM Schematic .............................................................................................. 8
2 LMG1205HBEVM Board Top View ....................................................................................... 9
3 LMG1205HBEVM Board Bottom View ................................................................................... 9
4 HI Test Point (TP8) ........................................................................................................ 10
5 LI Test Point (TP9)......................................................................................................... 10
6 HS Test Point (TP12)...................................................................................................... 10
7 HB Test Point (TP4) ....................................................................................................... 10
8 HO Test Point (TP3) ....................................................................................................... 10
9 LO Test Point (TP11)...................................................................................................... 10
10 LMG1205HBEVM Test Setup Connections ............................................................................ 11
11 Input and Output Waveforms Showing the Dead Time ............................................................... 13
12 Zoom in of the SW Node Running at 50% Duty Cycle................................................................ 14
13 48-V to 5-V Synchronous Buck Converter Operation Showing Inputs, SW Node, and VOUT ..................... 14
14 LMG1205HBEVM-10 Top Layer and Components.................................................................... 15
15 LMG1205HBEVM-10 Bottom Layer and Components ................................................................ 15
List of Tables
1 LMG1205HBEVM Electrical Performance Specifications .............................................................. 7
2 Test Point Functional Descriptions....................................................................................... 10
3 List of Terminals............................................................................................................ 11
4 LMG1205HBEVM List of Materials ...................................................................................... 16

WARNING
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Preface
Preface
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General TI High Voltage Evaluation User Safety Guidelines
Always follow TI’s setup and application instructions, including use of all interface components within their
recommended electrical rated voltage and power limits. Always use electrical safety precautions to help
ensure your personal safety and the safety of those working around you. Contact TI’s Product Information
Center http://support/ti./com for further information.
Save all warnings and instructions for future reference.
Failure to follow warnings and instructions may result in personal injury, property damage, or
death due to electrical shock and/or burn hazards.
The term TI HV EVM refers to an electronic device typically provided as an open-framed, unenclosed
printed-circuit board assembly. It is intended strictly for use in development laboratory environments,
solely for qualified professional users having training, expertise, and knowledge of electrical safety risks in
development and application of high-voltage electrical circuits. Any other use and/or application are strictly
prohibited by Texas Instruments. If you are not suitably qualified, you should immediately stop from further
use of the HV EVM.
•Work Area Safety:
– Maintain a clean and orderly work area.
– Qualified observer(s) must be present anytime circuits are energized.
– Effective barriers and signage must be present in the area where the TI HV EVM and its interface
electronics are energized, indicating operation of accessible high voltages may be present, for the
purpose of protecting inadvertent access.
– All interface circuits, power supplies, evaluation modules, instruments, meters, scopes and other
related apparatus used in a development environment exceeding 50 VRMS/75 VDC must be
electrically located within a protected Emergency Power Off (EPO) protected power strip.
– Use a stable and non-conductive work surface.
– Use adequately insulated clamps and wires to attach measurement probes and instruments. No
freehand testing whenever possible.
•Electrical Safety:
As a precautionary measure, it is always a good engineering practice to assume that the entire
EVM may have fully accessible and active high voltages.
– De-energize the TI HV EVM and all its inputs, outputs, and electrical loads before performing any
electrical or other diagnostic measurements. Confirm that TI HV EVM power has been safely de-
energized.
– With the EVM confirmed de-energized, proceed with required electrical circuit configurations, wiring,
measurement equipment hook-ups and other application needs, while still assuming the EVM circuit
and measuring instruments are electrically live.
– When EVM readiness is complete, energize the EVM as intended.
WARNING: While the EVM is energized, never touch the EVM or its electrical circuits as they
could be at high voltages capable of causing electrical shock hazard.

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General TI High Voltage Evaluation User Safety Guidelines
•Personal Safety:
– Wear personal protective equipment, for example, latex gloves and/or safety glasses with side
shields or protect EVM in an adequate lucent plastic box with interlocks from accidental touch.
•Limitation for Safe Use:
– EVMs are not to be used as all or part of a production unit.
Safety and Precautions
The EVM is designed for professionals who have received the appropriate technical training, and is
designed to operate from an AC power supply or a high-voltage DC supply. Please read this user guide
and the safety-related documents that come with the EVM package before operating this EVM.
CAUTION
Do not leave the EVM powered when unattended.
WARNING
Hot surface! Contact may cause burns. Do not touch!
WARNING
Hot surface! Contact may cause burns. Do not touch!
WARNING
High Voltage! Electric shock is possible when connecting board to
live wire. Board should be handled with care by a professional.
For safety, use of isolated test equipment with overvoltage and
overcurrent protection is highly recommended.

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Using the LMG1205HBEVM GaN Half-Bridge Power Stage EVM
User's Guide
SNVU552–March 2017
Using the LMG1205HBEVM
GaN Half-Bridge Power Stage EVM
The LMG1205HBEVM is designed to evaluate the LMG1205 100-V half-bridge driver for enhancement-
mode GaN FETs. The main circuit in this EVM consists of two Gallium Nitride (GaN) FETs connected in a
half-bridge configuration, driven by an LMG1205.
This EVM guide describes correct operation and measurement of the EVM, as well as the EVM
construction and typical performance. Additionally, setup instructions, including power up, are described to
achieve DC-DC conversion at a certain regulation voltage. The EVM board is designed to accelerate the
evaluation of the LMG1205.
This board is not intended to be used as a standalone product, but rather is intended for use to evaluate
the switching performance of the LMG1205.
1 Description
The LMG1205HBEVM evaluation module is a small, easy-to-use power stage with an external PWM
signal. The board can be configured as a buck converter, boost converter, or other converter topology
using a half bridge.
Because this is an open-loop board with an external PWM signal, it is not intended for evaluation of
transient response. This EVM can be used to evaluate the performance of the LMG1205 in a hard-
switched converter to sample measurements such as efficiency, switching speed, and slew rate.
The EVM features an LMG1205 half-bridge driver coupled with two 100-V, 7-mΩGaN FETs in a half-
bridge configuration. The module can deliver up to 10 A of current if the application includes adequate
thermal management (monitor case temperature and ensure adequate airflow is present, if required). The
thermal management considerations include forced air, heat sink, and lower operating frequency to
minimize the power dissipation in the module.
1.1 EVM Features
LMG1205HBEVM features include:
• Input voltage operates up to 80 VDC
• Optimized PCB layout minimizes gate and power loop inductances to mitigate ringing effects
• Single-input, onboard for PWM signal with 8-ns dead time
• Configurable onboard dead-time adjustment by simple resistance change
• Onboard LDO for generating 5-V VCC supply from a poorly regulated supply between 5.5 V and 10 V
• Convenient test points for DC and switching signal evaluation
• Kelvin sense capability for efficiency measurements for input and output voltage
CAUTION
High-voltage levels may be present on the evaluation module whenever it is
energized. Proper precautions must be taken when working with the EVM.

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1.2 Typical Applications
The LMG1205 is suited for use in high frequency DC-DC converters. It is simple to use and requires few
external components. Typical applications include:
• High-speed, synchronous buck converters
• Class D amplifiers for audio
• 48-V point-of-load converters for industrial, computing, and telecom
2 EVM Kit Contents
The kit contains the following:
• Safety instructions
• LMG1205HBEVM PCB assembly
3 Electrical Performance Specifications
Table 1. LMG1205HBEVM Electrical Performance Specifications
PARAMETER TEST CONDITIONS MIN TYP MAX UNITS
VBUS Half-bridge input voltage Connected to drain of high-side FET 80 V
VOUT Half-bridge output voltage Connected through inductor L1 to SW 80 V
VIN Input voltage for 5-V VDD LDO 5.5 10 V
VPWM PWM input voltage 0 5 V
IOUT Half-bridge output current 10 A
POUT Half-bridge output power LMG1205 and GaN FETs TJ≤125ºC 160 W
fSW Switching frequency 0.1 1 5 MHz

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4 EVM Schematic
Figure 1 shows the schematic of the evaluation module.
Figure 1. LMG1205HBEVM Schematic

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5 Test Setup
This section describes the EVM hardware and outlines the procedure to set it up for evaluation. Figure 2
and Figure 3 show the top and bottom views of the LMG1205HBEVM, respectively.
Figure 2. LMG1205HBEVM Board Top View Figure 3. LMG1205HBEVM Board Bottom View
WARNING
High voltages that may cause injury exist on this evaluation
module (EVM). Please ensure all safety procedures are followed
when working on this EVM. Never leave a powered EVM
unattended.
5.1 Test Equipment
•DC Voltage Source: capable of supplying the input of the EVM up to 80 V as desired. Capable of
supplying 10 A and supports current limiting
•DC Bias Source: capable of 5.5-V to 10-V output at up to 500 mA
•Oscilloscope: capable of at least 200-MHz operation ( ≥500 MHz preferred), using oscilloscope
probes with a spring-type ground connection
•DC Multimeter(s): Capable of 80-V measurement, suitable for determining operation and efficiency (if
desired)
•DC Load: Capable of 100-V operation at up to 10 A in constant current-mode operation
•Function Generator: single output for PWM operation, dual synchronous output for Independent mode
(requires EVM modification), capable of at least 0-V to 3-V signal (operating maximum digital input is 5
V)

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5.2 List of Test Points
The test points for switching voltage signals on this EVM have been designed for use with oscilloscope
probes with the included spring-type ground connections (often called pigtails). Using the small pigtails
instead of the ground clips will minimize measurement error and produce a cleaner signal with the fast
switching GaN devices used on this EVM. Refer to Figure 4 through Figure 9 to see the intended probe
usage for each of the switching signals. The switching voltage data shown in this user guide has been
obtained using such a measurement method.
Table 2. Test Point Functional Descriptions
TEST POINT NAME DESCRIPTION
TP1 5V_VDD 5-V VDD onboard generated supply
TP2 GND GND
TP3 HO High-side GaN FET gate signal
TP4 HB High-side Floating Bias Supply
TP5 Vbus sense + High-sense connection for Vbus input voltage
TP6 Vbus sense – Low-sense connection for Vbus input voltage (PGND)
TP7 Vout sense + High-sense connection for Vout output voltage
TP8 HI High-side GaN FET control input signal
TP9 LI Low-side GaN FET control input signal
TP10 Vout sense – Low-sense connection for Vbus output voltage (PGND)
TP11 LO Low-side GaN FET gate signal
TP12 HS High-side GaN FET source signal (that is, SW node)
J5 Iout sense Output current sense through 5-mΩshunt resistor (1V:20A)
Figure 4. HI Test Point (TP8) Figure 5. LI Test Point (TP9) Figure 6. HS Test Point (TP12)
Figure 7. HB Test Point (TP4) Figure 8. HO Test Point (TP3) Figure 9. LO Test Point (TP11)

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5.3 List of Terminals
Table 3. List of Terminals
TERMINAL NAME DESCRIPTION
J1 VIN LDO bias input for 5-V VDD onboard generated supply
J2 PWM_IN Function generator input. See Section 5.4.1.
J3 VBUS GaN half-bridge input bus voltage
J4 VOUT GaN half-bridge output voltage
5.4 EVM Connections
Figure 10 shows the required connections for basic operation of the EVM.
Figure 10. LMG1205HBEVM Test Setup Connections
5.4.1 PWM Input
Provide the PWM input using a function generator that is capable of providing the desired switching
frequency and duty cycle. This function generator output should be connected to the J2 connector as
shown in Figure 10. The top-most pin (J2-pin1) in this view is the positive input of the PWM supply and
the remaining three pins are connected to GND in the default assembly for the board.

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Alternatively, two separate PWM inputs may be applied to control HI and LI independently. To apply this
type of control, R3 must be removed and R5 must be populated with a 0-Ωresistor. Once these
modifications have been done, the HI signal should be applied at pin 1 of J2, and the LI signal at pin 4 of
J2. Note that with this control scheme, the EVM will no longer generate a dead time separating HI and LI
transitions. Careful consideration must be applied to the control signals in this mode of operation to
prevent a shoot-through condition.
5.4.2 Setting Dead Time
Dead times are set by the RC delays between the inverted and noninverted PWM inputs to the LMG1205
driver. The dead time typically does not require to be changed, however to evaluate impact of dead time
on efficiency, you can vary the RC delay, its easy to change resistors R1 and R4 to get the appropriate
dead time. Ensure that the dead time is not reduced so much that it causes a shoot-through condition.
Setting the dead time correctly will improve efficiency and prevent damage to the GaN FETs. The duration
of the dead time needed depends on operating conditions: monitor this parameter over the operating
range and adjust accordingly.
5.4.3 Test Point Connections
Ensure that any test point connections — both DC and high-speed probe connections — are made prior to
powering up the EVM.
6 Test Procedure
This section describes different tests that can be performed using the LMG1205HBEVM in its default
buck-converter configuration. Never leave a powered EVM unattended for any length of time. Also, the
unit should never be handled while power is applied to it. A high-voltage power supply with overcurrent
protection enabled and/or connected in series with a properly-rated use is recommended for safe
operation. Ensure that the electrical characteristic table conditions are met to prevent damage to any
components on this EVM.
WARNING
There are very high voltages present on the EVM. Some
components reach temperatures above 50°C. Precautions must be
taken when handling the board.
6.1 Power-Up Procedure
1. Connect the VIN bias supply to J1, the VBUS supply to J3, and output load to J4 as shown in Figure 10,
but do not power them on yet. J4 can be left open if unloaded operation is desired.
2. If you will be performing efficiency measurements, connect multimeters or power meter across kelvin
voltage sense points TP5 and TP6 for the input voltage, and across TP7 and TP10 for the output
voltage.
3. Connect the function generator per Section 5.4.1. Do not enable the output(s) yet.
4. Power up the VIN bias supply to J1 to between 5.5 and 10 V. The onboard LDO will provide 5 V to
power internal circuitry and the gate driver. LED D3 should illuminate and you should be able to
measure 5 V from TP1 to TP2.
5. Enable the output(s) of the function generator and verify that the gate signals are not overlapping. If
you notice overlap, power down the board and ensure board is populated as described in
Section 5.4.2.
6. Set the current limit for the VBUS supply to 10 A or less, and the voltage to the desired level (80
maximum). LED D4 should illuminate.
7. If using an electronic load, enable it now and set it to the desired load current (10 A or less).
8. Perform the desired measurements.

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6.2 Shutdown Procedure
Once the desired measurements have been completed, shut down the EVM by following these steps:
1. Turn off the VBUS supply on J3.
2. Disable the function generator.
3. Disable the electronic load.
4. Disable the VIN bias supply on J1.
7 Switching Waveforms
VDD = 5 V, VHS = VSS = 0 V, fSW = 5 MHz
Figure 11. Input and Output Waveforms Showing the Dead Time

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VIN = 12 V, fSW = 5 MHz, No Load
Figure 12. Zoom in of the SW Node Running at 50% Duty Cycle
VIN = 48 V, fSW = 1 MHz, VOUT = 5 V, No Load
Figure 13. 48-V to 5-V Synchronous Buck Converter Operation Showing Inputs, SW Node, and VOUT

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8 EVM Assembly Drawing and PCB Layout
Figure 14. LMG1205HBEVM-10 Top Layer and Components
Figure 15. LMG1205HBEVM-10 Bottom Layer and Components

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9 List of Materials
NOTE: Moisture and other contaminants in the air may provide an environment which allows
dendrite growth under the LMG1205 driver or the GaN MOSFETs on this EVM and lead to
leakage or shorting across high-voltage terminals. The standard assembly of this EVM does
not have underfill material and should be used in low-contaminant conditions. An underfill
material such as Loctite Hysol FP4549Si or Shin-Etsu SMC375X7 should be used in
applications where the board is exposed to moisture.
(1) Unless otherwise noted, all parts may be substituted with equivalents
(2) EPC2001 is an acceptable substitute and some EVMs may be assembled using this part number
Table 4. LMG1205HBEVM List of Materials(1)
DESIGNATOR QTY VALUE DESCRIPTION PART NUMBER MANUFACTURER
PCB1 1 Printed-Circuit Board SV601338 Any
C1 1 10 µF CAP, CERM, 10 µF, 25 V, ±10%, X5R, 0805 C2012X5R1E106K125AB TDK
C2, C20 2 2.2 µF CAP, CERM, 2.2 µF, 16 V, ±10%, X7R, 0805 C0805C225K4RACTU Kemet
C3, C4 2 0.1 µF CAP, CERM, 0.1 µF, 16 V, ±5%, X7R, 0603 0603YC104JAT2A AVX
C5, C7 2 2.2 µF CAP, CERM, 2.2 µF, 10 V, ±10%, X7R, 0603 GRM188R71A225KE15D MuRata
C6 1 100 pF CAP, CERM, 100 pF, 25 V, ±10%, X7R, 0603 06033C101KAT2A AVX
C8, C9 2 100 pF CAP, CERM, 100 pF, 50 V, ±5%, C0G/NP0,
0402 CC0402JRNPO9BN101 Yageo America
C11, C26 2 10 µF CAP, CERM, 10 µF, 100 V, ±20%, X7R, 2220 22201C106MAT2A AVX
C12, C13, C24, C25 4 2.2 µF CAP, CERM, 2.2 µF, 100 V, ±10%, X7R, 1210 C1210C225K1RACTU Kemet
C14, C15, C16 3 0.1 µF CAP, CERM, 0.1 µF, 100 V, ±10%, X7R, 0805 C0805C104K1RACTU Kemet
C17, C27 2 0.1 µF CAP, CERM, 0.1uF, 25 V, ±10%, X7R, 0603 GRM188R71E104KA01D MuRata
C18 1 0.1 µF CAP, CERM, 0.1 µF, 10 V, ±10%, X5R, 0402 C1005X5R1A104K050BA TDK
C19, C28 2 10 pF CAP, CERM, 10 pF, 50 V, ±5%, C0G/NP0, 0402 500R07S100JV4T Johanson Technology
C21 1 1 µF CAP, CERM, 1 µF, 25 V, ±10%, X5R, 0402 C1005X5R1E105K050BC TDK
D1, D2 2 40 V Diode, Schottky, 40 V, 0.03 A, SOD-523 SDM03U40-7 Diodes Inc.
D3, D4 2 Green LED, Green, SMD LTST-C170KGKT Lite-On
H1, H2, H3, H4 4 Machine Screw, Round, #4-40 x 1/4, Nylon,
Philips panhead NY PMS 440 0025 PH B&F Fastener Supply
H5, H6, H7, H8 4 Standoff, Hex, 0.5"L #4-40 Nylon 1902C Keystone
J1 1 Terminal Block, 2.54 mm, 2x1, Brass, TH OSTVN02A150 On-Shore Technology
J2 1 Header, 100 mil, 4x1, Tin, TH 5-146278-4 TE Connectivity
J3, J4 2 Terminal Block, 2x1, 5.08 mm, TH 282841-2 TE Connectivity
J5 1 Header, 100 mil, 2x1, Gold, TH TSW-102-07-G-S Samtec
L1 1 4.7 µH Inductor, Shielded, Composite, 4.7 µH, 10.5 A,
0.00889 Ω, SMD XAL8080-472ME Coilcraft
Q1, Q2 2 100 V MOSFET, N-CH, 100 V, 36 A, 4.105x1.632mm EPC2001C(2) EPC
R1, R4 2 47 RES, 47 Ω, 5%, 0.063 W, 0402 CRCW040247R0JNED Vishay-Dale
R2, R6 2 10.0 k RES, 10.0 kΩ, 1%, 0.063 W, 0402 CRCW040210K0FKED Vishay-Dale
R3 1 0 RES, 0 Ω, 5%, 0.063 W, 0402 CRCW04020000Z0ED Vishay-Dale
R7 1 0.05 RES, 0.05 Ω, 1%, 0.1 W, 0603 ERJ-L03KF50MV Panasonic
R8, R10, R12, R13 4 0 RES, 0, 5%, 0.063 W, 0402 ERJ-2GE0R00X Panasonic
R11 1 0.005 RES, 0.005, 1%, 2 W, 2512 WIDE FCSL64R005FER Ohmite
R15 1 1.0 k RES, 1.0 kΩ, 5%, 0.1 W, 0603 CRCW06031K00JNEA Vishay-Dale
R16 1 100 k RES, 100 k, 5%, 0.25 W, 1206 CRCW1206100KJNEA Vishay-Dale
TP1 1 Test Point, Miniature, Yellow, TH 5004 Keystone
TP2, TP10 2 Black Test Point, Miniature, Black, TH 5001 Keystone
TP5, TP7 2 Red Test Point, Miniature, Red, TH 5000 Keystone

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Table 4. LMG1205HBEVM List of Materials(1) (continued)
DESIGNATOR QTY VALUE DESCRIPTION PART NUMBER MANUFACTURER
(3) No alternate component manufacturer
TP6 1 Test Point, Miniature, Black, TH 5001 Keystone
U1 1 80-V, 1.2-A / 5-A, Half-Bridge Gate Driver for
Enhancement Mode GaN FETs, YFX0012AHAP
(DSBGA-12)
LMG1205YFXR Texas Instruments(3)
U2 1 Triple Schmitt-Trigger Inverter, DCU0008A
(VSSOP-8) SN74LVC3G14DCUR Texas Instruments(3)
U3 1 1-A Low Dropout CMOS Linear Regulators
Stable with Ceramic Output Capacitors, 6-pin
LLP, Pb-Free
LP38690SD-5.0/NOPB Texas Instruments(3)
U4 1 Dual Schmitt-Trigger Inverter, DBV0006A (SOT-
6) SN74LVC2G14DBVR Texas Instruments(3)
C10 0 22 µF CAP, AL, 22 µF, 20 V, ±20%, 0.06 Ω, SMD APXH200ARA220MF60G Chemi-Con
C22 0 47 µF CAP, AL, 47 µF, 20 V, ±20%, 0.045 Ω, SMD APXH200ARA470MH70G Chemi-Con
C23 0 2.2 µF CAP, CERM, 2.2 µF, 100 V, ±10%, X7R, 1210 C1210C225K1RACTU Kemet
R5 0 0 RES, 0 Ω, 5%, 0.063 W, 0402 CRCW04020000Z0ED Vishay-Dale

STANDARD TERMS FOR EVALUATION MODULES
1. Delivery: TI delivers TI evaluation boards, kits, or modules, including any accompanying demonstration software, components, and/or
documentation which may be provided together or separately (collectively, an “EVM” or “EVMs”) to the User (“User”) in accordance
with the terms set forth herein. User's acceptance of the EVM is expressly subject to the following terms.
1.1 EVMs are intended solely for product or software developers for use in a research and development setting to facilitate feasibility
evaluation, experimentation, or scientific analysis of TI semiconductors products. EVMs have no direct function and are not
finished products. EVMs shall not be directly or indirectly assembled as a part or subassembly in any finished product. For
clarification, any software or software tools provided with the EVM (“Software”) shall not be subject to the terms and conditions
set forth herein but rather shall be subject to the applicable terms that accompany such Software
1.2 EVMs are not intended for consumer or household use. EVMs may not be sold, sublicensed, leased, rented, loaned, assigned,
or otherwise distributed for commercial purposes by Users, in whole or in part, or used in any finished product or production
system.
2Limited Warranty and Related Remedies/Disclaimers:
2.1 These terms do not apply to Software. The warranty, if any, for Software is covered in the applicable Software License
Agreement.
2.2 TI warrants that the TI EVM will conform to TI's published specifications for ninety (90) days after the date TI delivers such EVM
to User. Notwithstanding the foregoing, TI shall not be liable for a nonconforming EVM if (a) the nonconformity was caused by
neglect, misuse or mistreatment by an entity other than TI, including improper installation or testing, or for any EVMs that have
been altered or modified in any way by an entity other than TI, (b) the nonconformity resulted from User's design, specifications
or instructions for such EVMs or improper system design, or (c) User has not paid on time. Testing and other quality control
techniques are used to the extent TI deems necessary. TI does not test all parameters of each EVM.
User's claims against TI under this Section 2 are void if User fails to notify TI of any apparent defects in the EVMs within ten (10)
business days after delivery, or of any hidden defects with ten (10) business days after the defect has been detected.
2.3 TI's sole liability shall be at its option to repair or replace EVMs that fail to conform to the warranty set forth above, or credit
User's account for such EVM. TI's liability under this warranty shall be limited to EVMs that are returned during the warranty
period to the address designated by TI and that are determined by TI not to conform to such warranty. If TI elects to repair or
replace such EVM, TI shall have a reasonable time to repair such EVM or provide replacements. Repaired EVMs shall be
warranted for the remainder of the original warranty period. Replaced EVMs shall be warranted for a new full ninety (90) day
warranty period.
3Regulatory Notices:
3.1 United States
3.1.1 Notice applicable to EVMs not FCC-Approved:
FCC NOTICE: This kit is designed to allow product developers to evaluate electronic components, circuitry, or software
associated with the kit to determine whether to incorporate such items in a finished product and software developers to write
software applications for use with the end product. This kit is not a finished product and when assembled may not be resold or
otherwise marketed unless all required FCC equipment authorizations are first obtained. Operation is subject to the condition
that this product not cause harmful interference to licensed radio stations and that this product accept harmful interference.
Unless the assembled kit is designed to operate under part 15, part 18 or part 95 of this chapter, the operator of the kit must
operate under the authority of an FCC license holder or must secure an experimental authorization under part 5 of this chapter.
3.1.2 For EVMs annotated as FCC – FEDERAL COMMUNICATIONS COMMISSION Part 15 Compliant:
CAUTION
This device complies with part 15 of the FCC Rules. Operation is subject to the following two conditions: (1) This device may not
cause harmful interference, and (2) this device must accept any interference received, including interference that may cause
undesired operation.
Changes or modifications not expressly approved by the party responsible for compliance could void the user's authority to
operate the equipment.
FCC Interference Statement for Class A EVM devices
NOTE: This equipment has been tested and found to comply with the limits for a Class A digital device, pursuant to part 15 of
the FCC Rules. These limits are designed to provide reasonable protection against harmful interference when the equipment is
operated in a commercial environment. This equipment generates, uses, and can radiate radio frequency energy and, if not
installed and used in accordance with the instruction manual, may cause harmful interference to radio communications.
Operation of this equipment in a residential area is likely to cause harmful interference in which case the user will be required to
correct the interference at his own expense.

FCC Interference Statement for Class B EVM devices
NOTE: This equipment has been tested and found to comply with the limits for a Class B digital device, pursuant to part 15 of
the FCC Rules. These limits are designed to provide reasonable protection against harmful interference in a residential
installation. This equipment generates, uses and can radiate radio frequency energy and, if not installed and used in accordance
with the instructions, may cause harmful interference to radio communications. However, there is no guarantee that interference
will not occur in a particular installation. If this equipment does cause harmful interference to radio or television reception, which
can be determined by turning the equipment off and on, the user is encouraged to try to correct the interference by one or more
of the following measures:
•Reorient or relocate the receiving antenna.
•Increase the separation between the equipment and receiver.
•Connect the equipment into an outlet on a circuit different from that to which the receiver is connected.
•Consult the dealer or an experienced radio/TV technician for help.
3.2 Canada
3.2.1 For EVMs issued with an Industry Canada Certificate of Conformance to RSS-210 or RSS-247
Concerning EVMs Including Radio Transmitters:
This device complies with Industry Canada license-exempt RSSs. Operation is subject to the following two conditions:
(1) this device may not cause interference, and (2) this device must accept any interference, including interference that may
cause undesired operation of the device.
Concernant les EVMs avec appareils radio:
Le présent appareil est conforme aux CNR d'Industrie Canada applicables aux appareils radio exempts de licence. L'exploitation
est autorisée aux deux conditions suivantes: (1) l'appareil ne doit pas produire de brouillage, et (2) l'utilisateur de l'appareil doit
accepter tout brouillage radioélectrique subi, même si le brouillage est susceptible d'en compromettre le fonctionnement.
Concerning EVMs Including Detachable Antennas:
Under Industry Canada regulations, this radio transmitter may only operate using an antenna of a type and maximum (or lesser)
gain approved for the transmitter by Industry Canada. To reduce potential radio interference to other users, the antenna type
and its gain should be so chosen that the equivalent isotropically radiated power (e.i.r.p.) is not more than that necessary for
successful communication. This radio transmitter has been approved by Industry Canada to operate with the antenna types
listed in the user guide with the maximum permissible gain and required antenna impedance for each antenna type indicated.
Antenna types not included in this list, having a gain greater than the maximum gain indicated for that type, are strictly prohibited
for use with this device.
Concernant les EVMs avec antennes détachables
Conformément à la réglementation d'Industrie Canada, le présent émetteur radio peut fonctionner avec une antenne d'un type et
d'un gain maximal (ou inférieur) approuvé pour l'émetteur par Industrie Canada. Dans le but de réduire les risques de brouillage
radioélectrique à l'intention des autres utilisateurs, il faut choisir le type d'antenne et son gain de sorte que la puissance isotrope
rayonnée équivalente (p.i.r.e.) ne dépasse pas l'intensité nécessaire à l'établissement d'une communication satisfaisante. Le
présent émetteur radio a été approuvé par Industrie Canada pour fonctionner avec les types d'antenne énumérés dans le
manuel d’usage et ayant un gain admissible maximal et l'impédance requise pour chaque type d'antenne. Les types d'antenne
non inclus dans cette liste, ou dont le gain est supérieur au gain maximal indiqué, sont strictement interdits pour l'exploitation de
l'émetteur
3.3 Japan
3.3.1 Notice for EVMs delivered in Japan: Please see http://www.tij.co.jp/lsds/ti_ja/general/eStore/notice_01.page 日本国内に
輸入される評価用キット、ボードについては、次のところをご覧ください。
http://www.tij.co.jp/lsds/ti_ja/general/eStore/notice_01.page
3.3.2 Notice for Users of EVMs Considered “Radio Frequency Products” in Japan: EVMs entering Japan may not be certified
by TI as conforming to Technical Regulations of Radio Law of Japan.
If User uses EVMs in Japan, not certified to Technical Regulations of Radio Law of Japan, User is required to follow the
instructions set forth by Radio Law of Japan, which includes, but is not limited to, the instructions below with respect to EVMs
(which for the avoidance of doubt are stated strictly for convenience and should be verified by User):
1. Use EVMs in a shielded room or any other test facility as defined in the notification #173 issued by Ministry of Internal
Affairs and Communications on March 28, 2006, based on Sub-section 1.1 of Article 6 of the Ministry’s Rule for
Enforcement of Radio Law of Japan,
2. Use EVMs only after User obtains the license of Test Radio Station as provided in Radio Law of Japan with respect to
EVMs, or
3. Use of EVMs only after User obtains the Technical Regulations Conformity Certification as provided in Radio Law of Japan
with respect to EVMs. Also, do not transfer EVMs, unless User gives the same notice above to the transferee. Please note
that if User does not follow the instructions above, User will be subject to penalties of Radio Law of Japan.

【無線電波を送信する製品の開発キットをお使いになる際の注意事項】 開発キットの中には技術基準適合証明を受けて
いないものがあります。 技術適合証明を受けていないもののご使用に際しては、電波法遵守のため、以下のいずれかの
措置を取っていただく必要がありますのでご注意ください。
1. 電波法施行規則第6条第1項第1号に基づく平成18年3月28日総務省告示第173号で定められた電波暗室等の試験設備でご使用
いただく。
2. 実験局の免許を取得後ご使用いただく。
3. 技術基準適合証明を取得後ご使用いただく。
なお、本製品は、上記の「ご使用にあたっての注意」を譲渡先、移転先に通知しない限り、譲渡、移転できないものとします。
上記を遵守頂けない場合は、電波法の罰則が適用される可能性があることをご留意ください。 日本テキサス・イ
ンスツルメンツ株式会社
東京都新宿区西新宿６丁目２４番１号
西新宿三井ビル
3.3.3 Notice for EVMs for Power Line Communication: Please see http://www.tij.co.jp/lsds/ti_ja/general/eStore/notice_02.page
電力線搬送波通信についての開発キットをお使いになる際の注意事項については、次のところをご覧ください。http:/
/www.tij.co.jp/lsds/ti_ja/general/eStore/notice_02.page
3.4 European Union
3.4.1 For EVMs subject to EU Directive 2014/30/EU (Electromagnetic Compatibility Directive):
This is a class A product intended for use in environments other than domestic environments that are connected to a
low-voltage power-supply network that supplies buildings used for domestic purposes. In a domestic environment this
product may cause radio interference in which case the user may be required to take adequate measures.
4EVM Use Restrictions and Warnings:
4.1 EVMS ARE NOT FOR USE IN FUNCTIONAL SAFETY AND/OR SAFETY CRITICAL EVALUATIONS, INCLUDING BUT NOT
LIMITED TO EVALUATIONS OF LIFE SUPPORT APPLICATIONS.
4.2 User must read and apply the user guide and other available documentation provided by TI regarding the EVM prior to handling
or using the EVM, including without limitation any warning or restriction notices. The notices contain important safety information
related to, for example, temperatures and voltages.
4.3 Safety-Related Warnings and Restrictions:
4.3.1 User shall operate the EVM within TI’s recommended specifications and environmental considerations stated in the user
guide, other available documentation provided by TI, and any other applicable requirements and employ reasonable and
customary safeguards. Exceeding the specified performance ratings and specifications (including but not limited to input
and output voltage, current, power, and environmental ranges) for the EVM may cause personal injury or death, or
property damage. If there are questions concerning performance ratings and specifications, User should contact a TI
field representative prior to connecting interface electronics including input power and intended loads. Any loads applied
outside of the specified output range may also result in unintended and/or inaccurate operation and/or possible
permanent damage to the EVM and/or interface electronics. Please consult the EVM user guide prior to connecting any
load to the EVM output. If there is uncertainty as to the load specification, please contact a TI field representative.
During normal operation, even with the inputs and outputs kept within the specified allowable ranges, some circuit
components may have elevated case temperatures. These components include but are not limited to linear regulators,
switching transistors, pass transistors, current sense resistors, and heat sinks, which can be identified using the
information in the associated documentation. When working with the EVM, please be aware that the EVM may become
very warm.
4.3.2 EVMs are intended solely for use by technically qualified, professional electronics experts who are familiar with the
dangers and application risks associated with handling electrical mechanical components, systems, and subsystems.
User assumes all responsibility and liability for proper and safe handling and use of the EVM by User or its employees,
affiliates, contractors or designees. User assumes all responsibility and liability to ensure that any interfaces (electronic
and/or mechanical) between the EVM and any human body are designed with suitable isolation and means to safely
limit accessible leakage currents to minimize the risk of electrical shock hazard. User assumes all responsibility and
liability for any improper or unsafe handling or use of the EVM by User or its employees, affiliates, contractors or
designees.
4.4 User assumes all responsibility and liability to determine whether the EVM is subject to any applicable international, federal,
state, or local laws and regulations related to User’s handling and use of the EVM and, if applicable, User assumes all
responsibility and liability for compliance in all respects with such laws and regulations. User assumes all responsibility and
liability for proper disposal and recycling of the EVM consistent with all applicable international, federal, state, and local
requirements.
5. Accuracy of Information: To the extent TI provides information on the availability and function of EVMs, TI attempts to be as accurate
as possible. However, TI does not warrant the accuracy of EVM descriptions, EVM availability or other information on its websites as
accurate, complete, reliable, current, or error-free.