Toshiba TCK401G User manual

RD002-RGUIDE-01
2018-03-07
Rev. 1
1/ 15
© 2018
Toshiba Electronic Devices & Storage Corporation
MOSFET Driver IC
Application and Circuit of the TCK401G
Reference Guide
RD002-RGUIDE-01

RD002-RGUIDE-01
2018-03-07
Rev. 1
2/ 15
© 2018
Toshiba Electronic Devices & Storage Corporation
Table of Contents
1. OVERVIEW ................................................................................................ 3
1.1. Target applications ................................................................................. 3
2. APPLICATION CIRCUIT EXAMPLE AND BILL OF MATERIALS ...................... 4
2.1. Application circuit example .................................................................... 4
2.2. Bill of materials ...................................................................................... 4
3. MAJOR FEATURES ..................................................................................... 5
3.1. SLEW RATE CONTROL ............................................................................. 5
3.2. AUTO OUTPUT DISCHARGE FUNCTION ................................................... 8
4. DESIGN CONSIDERATIONS ..................................................................... 10
5. PRODUCT OVERVIEW .............................................................................. 12
5.1. TCK401G .............................................................................................. 12
5.1.1 Overview ............................................................................................... 12
5.1.2. External view and pin assignment ........................................................ 13
5.1.3 Internal block diagram .......................................................................... 13
5.1.4 Pin description....................................................................................... 14
5.2. SSM6K513NU ....................................................................................... 14
5.2.1 Overview ............................................................................................... 14
5.2.2. External view and pin assignment ........................................................ 14
5.2.3 Internal block diagram .......................................................................... 14

RD002-RGUIDE-01
2018-03-07
Rev. 1
3/ 15
© 2018
Toshiba Electronic Devices & Storage Corporation
1. Overview
The TCK401G driver IC can drive two N-channel MOSFETs which has back-to-back connection
and contribution high-current bidirectional switch designed to enable rapid charging of host and
client devices specified by the USB Power Delivery (USB PD) Specification.
Using low-on-resistance N-channel MOSFETs, the TCK401G allows a bidirectional switch to be
configured minimum power dissipation and heat generation. The USB PD Specification requires not
only high charging voltage but also high charging current to reduce the charging time. The
TCK401G operates wide input voltage range from 2.7V to 28V so the maximum 20V input can be
applied specified by USB PD. Also the slew rate control driver contributes avoiding unexpected
inrush current during switching transitions in order to protect next stage electronic circuits. In
addition the auto output discharge function at switch-off feature can be used for applications
requiring stringent power management without any concern about time lag between a switch-off
signal and the output voltage reaching to zero. This reference guide focuses on the slew rate
control and the auto output discharge function of the TCK401G.
For details of other features and functions of the TCK401G, see the datasheet.
To download the datasheet for the TCK401G →
1.1. Target applications
Power management for mobile devices
Charging circuits for devices with a USB connector
Circuit example
* Toshiba offers a portfolio of MOSFETs which suit these applications.
For details of MOSFETs →
* Toshiba offers TVS diodes which suit charger and other high-current applications.
For details of TVS diodes →
Click Here
Click Here
Click Here

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2. Application circuit example and bill of materials
2.1. Application circuit example
Figure 2.1.1 shows an example of an application circuit using the TCK401G MOSFET driver IC.
Figure 2.1.1 Application circuit example for the TCK401G MOSFET driver IC
2.2. Bill of materials
Table 2.2.1 Bill of materials
No. Ref. Qty Value Part Number Manufacturer Description Packaging
Typical
Dimensions
mm (inches)
1 C1, C2 2 1μF - - Ceramic, 50 V, ±10% 1005 1.0 x 0.5
(0402)
2 Q1, Q2 2 - SSM6K513NU TOSHIBA N-channel MOSFET UDFN6B 2.0 x 2.0
３ U1 1 - TCK401G TOSHIBA MOSFET driver IC WCSP6E 1.2 x 0.8
V
CT
HIGH → ON
LOW → OFF

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Toshiba Electronic Devices & Storage Corporation
3. Major features
3.1. Slew rate control
Figure 3.1.1 shows the switch-on waveforms of a load switch with discrete solution having only
back-to-back MOSFETs. For this evaluation, a 4.7μF output capacitor was used. The peak output
current reached 7 to 8A when the load current was set to 5A. The load might be broken or damaged
by the peak current, depending on a type of load. In addition, the ringing caused by the peak current
might generate electromagnetic interference (EMI) that affects bad impact to electronic circuits. So
it is necessary to suppress inrush current during switch-on transitions. Figure 3.1.2 shows an
enlarged view of the ringing waveforms.
Figure 3.1.1 Example of waveforms of a load switch with discrete solution
Figure 3.1.2 Example of waveforms of a load switch with discrete solution
(enlarged view)
Test conditions:
Input voltage = 5V
Gate voltage = 0 ⇔ 5V
Output current= 5A
COUT＝ 4.7μF
Gate voltage
(5V/div)
Output current
(5A/div)
Output voltage
(5V/div)
Test conditions:
Input voltage = 5V
Gate voltage = 0 ⇔ 5V
Output current: 5A
COUT＝ 4.7μF
Gate voltage
(5V/div)
Output current
(5A/div)
Output voltage
(5V/div)
100μs/div
100μs/div

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The TCK401G has slew rate control circuit which limits inrush current during switch-on transitions.
Figure 3.1.3 shows an example of switching waveforms of back-to-back MOSFETs using TCK401G.
Figure 3.1.3 Example of switching waveforms of back-to-back MOSFETs with TCK401G
As shown in Figure 3.1.3, reducing the rising slew rate helps suppress inrush current and reduce
ringing and EMI.
Note that delay time may happens from VCT signal applied to the TCK401G to activate the driver
stage of the TCK401G. This delay is caused by the time required for signal processing in the TCK401G.
The V
GATE
output of the TCK401G drives the MOSFET gate inputs and the V
GATE
ON time (tON) is
specified in the datasheet. Note that in actual circuit, ON time (tON) is not a specification that defines
the switching time of external MOSFETs. In actual circuit, the turn-on time of the MOSFETs depends
on their gate capacitance and threshold voltage (Vth). The TCK401G specifies V
GATE
ON time (tON) at
a gate capacitance of 2000pF. The assumption comes from the TCK401G being used to drive two
back-to-back MOSFETs and each gate capacitance has roughly 1000pF. When the TCK401G drives
MOSFETs with lower gate capacitance, V
GATE
ON time is less than the number in the datasheet. This
means the switching time of external MOSFETs becomes faster. On the other hand, when the
TCK401G drives MOSFETs with higher gate capacitance, the MOSFET switching time becomes slower
because of a longer V
GATE
ON time. When MOSFETs with a high threshold voltage (Vth) are used, it
is recommended to use the TCK401G at an input voltage (V
IN
) with high as possible in order to raise
the VGATE voltage. For a details of the specification on the VGATE ON time, see Section 4, “Design
considerations.”
Figure 3.1.4 and Figure 3.1.5 show examples of switching waveforms of back-to-back MOSFETs
driven by the TCK401G at -40°C and 85°C.
Test conditions:
VIN = 5V
VCT = 0 ⇔ 5V
Output current= 5 A
COUT＝ 4.7μF
Ta = 25°C
V
CT
(5V/div)
Output current
(5A/div)
Output voltage
(5V/div)
200μs/div

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Toshiba Electronic Devices & Storage Corporation
Figure 3.1.4 Example of switching waveforms of back-to-back MOSFETs driven by the
TCK401G (-40°C)
Figure 3.1.5 Example of switching waveforms of back-to-back MOSFETs driven by the
TCK401G (85℃)
Test conditions:
VIN = 5V
VCT = 0 ⇔ 5V
Output current= 5A
COUT＝ 4.7μF
Ta = -40°C
Test conditions:
VIN = 5V
VCT = 0 ⇔ 5V
Output current: 5A
COUT＝ 4.7μF
Ta = 85°C
V
CT
(5V/div)
Output current
(5A/div)
Output voltage
(5V/div)
V
CT
(5V/div)
Output current
(5A/div)
Output voltage
(5V/div)
200μs/div
200μs/div

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3.2. Auto output discharge function
For the purpose of requiring low power consumption application, it is general that average power
consumption goes down balancing total system utilization and supplying power. Especially
smartphone and tablet, there is a trade-off between the size and weight of the device and their
battery capacity while a high level of power management is necessary, but in the application there
are various electronic circuits including wireless communication, camera, display, audio, and storage
circuits, so it is necessary to control their power supplies surely. Due to the decreasing voltage and
increasing clock rate of system-on-chips (SoCs) at the same time, their power consumption has
been increasing today and the future so the trend of the output capacitors which for power
management circuit used to stabilize the power supplies to the SoCs becomes increasing. When a
system needs to shut down a power supply for a SoC, the amount of charge remaining in a large-
value capacitor could be uncontrollable and cause system malfunction.
To avoid this problem, the TCK401G has the auto output discharge function, which is designed to
discharge the remaining amount of charge from the output capacitors for external MOSFETs at
switch-off in order to pull down quickly the output voltage to zero. If the DIS pin of the TCK401G is
connected to the outputs of external N-channel MOSFETs, the TCK401G automatically discharges
the remaining amount of charge from the output capacitors through the DIS pin when the VCT pin is
set Low to switch off the MOSFETs. The auto output discharge function requires no further
adjustment or setting. Figure 3.2.1 shows an example of MOSFET switching waveforms obtained
without using the TCK401G whereas Figure 3.2.2 shows waveforms obtained with the auto output
discharge function of the TCK401G.
Figure 3.2.1 Output waveforms without the auto output discharge function
Test conditions:
VIN = 5V
VGATE = 0 ⇔ 10V
IOUT = 5A
COUT＝ 4.7μF
Ta = 25°C
V
GATE
(10V/div)
Output current
(5 A/div)
Output voltage
(5 V/div)
5ms/div

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Toshiba Electronic Devices & Storage Corporation
Figure 3.2.2 Output waveforms with the auto output discharge function
The auto output discharge function of the TCK401G is designed to work properly regardless of the
ambient temperature. Figure 3.2.3 and Figure 3.2.4 show examples of MOSFET switching waveforms
at -40°C and 85°C.
Figure 3.2.3 Output waveforms with the auto output discharge function (-40°C)
The output drops to zero
quickly.
Test conditions:
VIN = 5V
VCT = 0 ⇔ 5V
IOUT = 5A
COUT＝ 4.7μF
Ta = 25°C
V
CT
(5V/div)
Output current
(5A/div)
Output voltage
(5V/div)
V
CT
(5 V/div)
Output current
(5 A/div)
Output voltage
(5 V/div)
Test conditions:
VIN = 5V
VCT = 0 ⇔ 5V
Output current: 5A
COUT＝ 4.7μF
Ta = -40°C
200μs/div
200μs/div

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Figure 3.2.4 Output waveforms with the auto output discharge function (85℃)
4. Design considerations
Input and output capacitors
It is recommended to add input capacitor CIN (C1) and output capacitor COUT (C2) to ensure
stable operation of the TCK401G. Place capacitors of at least 1.0μF closer to the input and output
pins. The tolerant voltage of these capacitors should be sufficiently higher than their operating
voltage.
VCT pin
The VCT pin of the TCK401G is a Schmitt-trigger input. The VCT pin is tolerant of a voltage
higher than the specified control voltage.
VGATE pin
The VGATE output drives the gate inputs of external MOSFETs. When the VCT input goes High,
VGATE output goes High with the TCK401G boosting up the voltage from VIN input. The following
shows the slew rate control function specification in the TCK401G datasheet.
Figure 4.1 Timing charts of the VCT and VGATE (from TCK401G datasheet)
V
CT
(5V/div)
Output current
(5A/div)
Output voltage
(5V/div)
Test conditions:
VIN = 5V
VCT = 0 ⇔ 5V
Output current: 5A
COUT＝ 4.7μF
Ta = 85°C
200μs/div

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Figure 4.1 shows the timing chart of the VCT and VGATE pins. The VGATE ON time (tON) shown in
the AC Characteristics table in the datasheet is the time required from the 50% point of VCT rise
edge when the VGATE voltage reaches VIN+1V. The slew rate control circuit maintains the slope
of the VGATE output. Therefore, the higher the VIN voltage, the longer the VGATE ON time (tON).
The VGATE OFF time (tOFF) shown in the AC Characteristics table in the datasheet is the time
required from the 50% point of VCT fall edge when the VGATE voltage reaches 0.5V.
VSRC pin
In the circuit which the TCK401G drives two MOSFETs, the VSRC pin has internal MOSFET and
make short-circuits to the VGATE output through the source of the MOSFETs when the TCK401G
turns off. The VSRC pin may be left open if the MOSFET gate-source voltage (VGS) has enough
margin. In cases of the TCK401G driving only one MOSFET, the VSRC pin may also be left open if
the MOSFET gate-source voltage (VGS) has enough margin. It is recommended to connect VSRC
to VOUT if VGS does not have an enough margin.
DIS pin
Connect the DIS pin to VOUT if automatic output discharge is necessary when the TCK401G
turns off. Otherwise, the DIS pin may be left open.
Overvoltage protection “off” time (tOVP)
Overvoltage lockout (OVLO) trips to turn off VGATE when VIN exceeds the maximum value of
Vin_opr. The OVLO “off” time (tOVP) is equal to the VGATE OFF time (tOFF).
Figure 4.2 TOVP timing chart

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Undervoltage lockout (UVLO) circuit
Undervoltage lockout (UVLO) trips to turn off VGATE when VIN drops below the minimum value
of Vin_opr.
Figure 4.3 UVLO timing chart
5. Product overview
5.1. TCK401G
5.1.1 Overview
The TCK401G MOSFET driver IC operates over a wide input voltage range of up to 28V.
MOSFET driver IC in a small package
High maximum input voltage: VIN (max) = 40V
Wide input voltage range: VIN = 2.7 to 28V
Auto output discharge function
Charge pump for VGATE
Inrush current suppression circuit
Overvoltage lockout (≥28V)
Undervoltage lockout (≤2.7V)
Protection against reverse current from external back-to-back MOSFETs
Package: WCSP6E (0.8 mm x 1.2 mm x 0.55 mm)

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5.1.2. External view and pin assignment
Figure 5.1.1 External view, marking, and pin assignment of the TCK401G
5.1.3 Internal block diagram
Figure 5.1.2 Internal block diagram of the TCK401G
Bottom view
Marking (top view)
External view and marking
Pin assignment (Top view)

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5.1.4 Pin description
Table 5.1.1 Pins of the TCK401G
5.2. SSM6K513NU
5.2.1 Overview
The SSM6K513NU is a silicon N-channel MOSFET for power management switch applications.
● High drain-source breakdown voltage: V(BR)DSS = 30V (min)
● Low on-resistance: RDS(ON) = 8.0mΩ (typical) (@VGS = 4.5V)
RDS(ON) = 6.5mΩ (typical) (@VGS = 10V)
5.2.2. External view and pin assignment
Figure 5.2.1 External view, marking, and pin assignment of the SSM6K513NU
5.2.3 Internal block diagram
Figure 5.2.2 Internal block diagram of the SSM6K513NU
End of Document
Pin Name Description
A1 VGATE Gate driver output
A2 VIN Supply voltage
B1 VSRC It is recommended to connect the VSRC output to the common source of
external MOSFETs.
B2 GND Ground
C1 DIS Output discharge pin
C2 VCT Mode Control pin
External MOSFETs turn on when VCT = High and turn off when VCT = Low.
SNA
1, 2, 5, 6: Drain
3: Gate
4: Source
Source Drain
Polarity Mark (on the top)
*Electrodes: on the bottom
Bottom view
Marking (Top view)
1, 2, 5, 6: Drain
3: Gate
4: Source

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