AMS AS5170 Series User manual

ams Datasheet Page 1
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AS5170
High-Resolution On-Axis Magnetic
Angular Position Sensor
The AS5170 is a high-resolution angular position sensor for
precise absolute angle measurement. The AS5170 is available
with an analog output interface (AS5170A and AS5170C) or a
digital output interface (AS5170B and AS5170D). The latter can
be programmed as a PWM or a SENT-compliant output
interface.
Based on a Hall sensor technology, this device measures the
orthogonal component of the flux density (Bz) over a full-turn
rotation and compensates for external stray magnetic fields
with a robust architecture based on a 14-bit sensor array and
analog front-end (AFE). A sub-range can be programmed to
achieve the best resolution for the application. To measure the
angle, only a simple two-pole magnet rotating over the center
of the package is required. The magnet may be placed above
or below the device. The absolute angle measurement provides
an instant indication of the magnet’s angular position. The
AS5170 operates at a supply voltage of 5V, and the supply and
output pins are protected against overvoltage up to +20V. In
addition the supply pins are protected against reverse polarity
up to –20V.
Figure 1:
Typical Arrangement of AS5170A/B/C/D and a Magnet
Ordering Information and Content Guide appear at end of
datasheet.
General Description

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AS5170 − GeneralDescription
Key Benefits and Features
The benefits and features of this device are listed below:
Figure 2:
Added Value of Using AS5170
Applications
The AS5170 is ideal for applications like:
•Rotary button angle sensors
•Liquid-level measurement systems
•Contactless potentiometers
Benefits Features
•Resolve small angular excursion with high
accuracy •12-bit resolution @90° minimum arc
•Accurate angle measurement •Low output noise, low inherent INL
•Higher durability and lower system costs (no
shield needed) •Magnetic stray field immunity
•Enabler for safety critical applications •Functional safety, diagnostics, dual redundant chip
version

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AS5170 − General Description
Block Diagram
The functional blocks of the AS5170A, AS5170B, AS5170C and
AS5170D are shown below:
Figure 3:
Functional Blocks of the AS5170A and AS5170C
Figure 4:
Functional Blocks of the AS5170B and AS5170D
Analog
Front-End 14-bit A/D
Register Setting
OTP
UART
LDO
Reverse Polarity Protection
AS5170A
AS5170C
OUT
VDD
VDD3V3
GND
ATAN
(CORDIC) Digital Filter 12-bit D/A
AGC
Linearizator Driver
Hall Sensors
Analog
Front-end
AGC
14-bit A/D Driver
Register Setting
OTP
UART
LDO
Reverse Polarity Protection
OUT
VDD
VDD3V3
GND
PWM
Digital Filter
ATAN
(CORDIC)
SENT
Linearizator
Hall Sensors
AS5170B
AS5170D

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AS5170 − PinAssignments
Figure 5:
AS5170A/B/C/D Pin Assignment (Top View, SOIC8)
Figure 6:
AS5170A/B/C/D Pin Description
Pin Number Pin
Name Pin Type Description Comments
SOIC-8
1 VDD Supply Positive supply
2 TP1 n.a. Test pin Connected to ground
3 TP2 n.a. Test pin Leave open
4 TP3 n.a. Test pin Connected to ground
5OUT
Analog output (AS5170A
and AS5170C)
Digital output (AS5170B
and AS5170D)
Output
interface
AS5170A/C: analog output
AS5170B/D: PWM or SENT output
6 TP4 n.a. Test pin To be connected to OUT
7VDD
3V3 Supply
3.3V on-chip low-dropout (LDO)
output. Requires an external
decoupling capacitor (100nF).
8 GND Supply Ground
Pin Assignments
2
3
45
6
7
81
TP1
TP2
TP3
TP4
VDD
VDD3V3
GND
OUT
AS5170x

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AS5170 − Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. These are stress
ratings only. Functional operation of the device at these or any
other conditions beyond those indicated under Electrical
Characteristics is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device
reliability.
Figure 7:
Absolute Maximum Ratings
Symbol Parameter Min Max Units Comments
Electrical Parameters
VDD DC Supply Voltage at
VDD pin -20 20 V Not operational
VOUT External DC voltage at
OUT pin -0.3 20 V Permanent
VDIFF DC voltage difference
between VDD and OUT -20 20
VREGOUT DC voltage at the
VDD3V3 pin -0.3 5.0 V
ISCR Input Current (latch-up
immunity) -100 100 mA Tests done according AEC Q100 004
Continuous Power Dissipation (TAMB = 70°C)
PTContinuous Power
Dissipation 300 mW
Electrostatic Discharge
ESDHBM Electrostatic Discharge
HBM ±2 kV Tests done according AEC Q100 002
Absolute Maximum Ratings

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AS5170 − AbsoluteMaximumRatings
Temperature Ranges and Storage Conditions
TAMB Operating Temperature
Range -40 150 °C Ambient temperature
TSTRG Storage Temperature
Range -55 125 °C 150°C for 1000h
TBODY Package Body
Temperature 260 °C
The reflow peak soldering temperature
(body temperature) is specified
according to IPC/JEDEC J-STD-020
“Moisture/Reflow Sensitivity
Classification for Non-hermetic Solid
State Surface Mount Devices.” The lead
finish for Pb-free leaded packages is
“Matte Tin” (100% Sn)
RHNC Relative Humidity
(non-condensing) 585 %
MSL Moisture Sensitivity
Level 3 Represents a maximum floor life time of 168 hours
Symbol Parameter Min Max Units Comments

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AS5170 − Electrical Characteristics
All tolerances that are defined for external components in this
datasheet, are needed to be assured over the whole operation
conditions range and also over lifetime.
Overall condition: TAMB = -40°C to 150°C, VDD=4.5V to 5.5V;
Components spec; unless otherwise noted.
Figure 8:
Operating Conditions
Figure 9:
Electrical System Characteristics
Note(s):
1. Reference magnet: NdFeB, 8 mm diameter, 2.5 mm thickness
Symbol Parameter Conditions Min Typ Max Unit
VDD Positive supply voltage 4.5 5.0 5.5 V
VREG Regulated Voltage VDD3V3 should not be loaded by
any external DC current 3.3 3.45 3.6 V
IDD_A Supply current AS5170A/C AGC=255 (no magnet placed) 4 12 mA
lDD_B Supply current AS517B/D AGC=255 (no magnet placed) 4 10 mA
ISTART Supply current at start-up VREG = 2.25V 2.5 5 10 mA
TSUP Start-up time Functional mode 10 ms
Symbol Parameter Conditions Min Typ Max Unit
CRES Core resolution 14 bit
ARES Analog resolution
(AS5170A/C) Range > 90° 12 bit
DRES Digital resolution
(AS5170B/D) 12 bit
INLopt Integral non-linearity
(optimum)
Best aligned reference magnet
(1)
at 25°C over full turn 360° -0.5 0.5 deg
INLtemp Integral non-linearity
(optimum)
Best aligned reference magnet
(1)
over temperature -40ºC to 150°C
over full turn 360°
-0.9 0.9 deg
INL Integral non-linearity
Best aligned reference magnet
(1)
over temperature -40Cº to150ºC
over full turn 360º and
displacement
-1.4 1.4 deg
ON Output noise peak to peak Static conditions - filter on 1 LSB
ST Sampling time 125 μs
Electrical Characteristics

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AS5170 − ElectricalCharacteristics
Figure 10:
Power Management - Supply Monitor - Timing
Symbol Parameter Conditions Min Typ Max Unit
VDDUVTH VDD undervoltage upper
threshold 3.5 4.0 4.5 V
VDDUVTL VDD undervoltage lower
threshold 3.0 3.5 4.0 V
VDDUH VDD undervoltage
hysteresis 300 500 900 mV
UVDT VDD undervoltage
detection time
Time devices detects
undervoltage
VDD< VDDUVTH
10 50 250 μs
UVRT Undervoltage recovery time
Time device return into
normal mode from failure
band VDD > VDDUVTH
10 50 250 μs
VDDOVTH VDD overvoltage upper
threshold 6.0 6.5 7.0 V
VDDOVTL VDD overvoltage lower
threshold 5.5 6.0 6.5 V
VDDOH VDD overvoltage hysteresis 300 500 900 V
OVDT VDD overvoltage detection
time
Time devices detects
overvoltage
VDD> VDDOVTL
500 1000 2000 μs
OVRT VDD overvoltage recovery
time
Time device return into
normal mode from failure
band VDD < VDDOVTL
500 1000 2000 μs
TDETWD WatchDog error detection
time
Time device detects
oscillator failure till output
is in failure band
12 ms

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AS5170 − Electrical Characteristics
TAMB = -40°C to 150°C, VDD = 4.5V to 5.5V, unless otherwise
noted.
Two-pole cylindrical diametrically magnetized source:
Figure 11:
Magnetic Characteristics
Note(s):
1. Reference magnet: NdFeB, 6 mm diameter, 2.5 mm thickness
Figure 12:
Electrical and Timing Characteristics Analog Output (AS5170A/C)
Symbol Parameter Conditions Min Typ Max Unit
Bz Orthogonal magnetic
field strength
Required orthogonal component of
the magnetic field strength
measured at the package surface
along a circle of 1.25 mm
MFER = 0
30 70 mT
BzE
Orthogonal magnetic
field strength
–Extended mode
Required orthogonal component of
the magnetic field strength
measured at the package surface
along a circle of 1.25mm
MFER = 1
10 90 mT
Disp(1) Displacement radius
Offset between defined device
center and magnet axis. Dependent
on the selected magnet.
0.5 mm
Symbol Parameter Conditions Min Typ Max Unit
INLOS INL output stage -6 +6 LSB
DNLOS DNL output stage -5 +5 LSB
RERR Ratiometricity error -0.5% 0.5% VDD
BVPU
Output voltage
broken VDD with
pull-up resistor
Pull-up resistor must be in the
specified range (see Figure 31)96 100 %VDD
BGPD
Output voltage
broken ground with
pull-down resistor
Pull-down resistor must be in the
specified range (see Figure 31)04%VDD
OSSCG Output short-circuit
current GND OUT = GND 5 10 20 mA
OSSCV Output short-circuit
current VDD OUT = VDD -20 -10 -5 mA
OSSDT Output short-circuit
detection time OUT = GND or OUT = VDD 20 200 600 μs

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AS5170 − ElectricalCharacteristics
Note(s):
1. For each code the ratiometricity error is defined as follows:
VOUTRATE=((VOUTact – (VOUTtyp*(VDDact/ VDDtyp)))/VDDtyp)*100
Where
- VOUTact is the actual output voltage
- VOUTtyp is the typical output voltage
- VDDact is the actual supply voltage
- VDDtyp is the typical supply voltage
Figure 13:
Electrical and Timing Characteristics PWM Output (AS5170B/D)
OSSRT Output short-circuit
recovery time 2520ms
OLCH Output level
clamping high Output current at OUT pin -3 mA 96 %VDD
OLCL Output level
clamping low Output current at OUT pin 3 mA 4 %VDD
OSPSR
Output stage positive
step response (driver
only)
From 0 to 90%VDD, measured at
OUT pin, with RPUOUT = 4.7kΩ,
CLOAD = 1nF, VDD = 5V
250 μs
OSNSR
Output stage
negative step
response (driver only)
From VDD to 10%VDD, measured at
OUT pin, with RPUOUT = 4.7kΩ,
CLOAD = 1nF, VDD = 5V
250 μs
OSTD Output stage
temperature drift
Of value at mid code, info parameter
not tested in production -0.2 0.2 %
Symbol Parameter Conditions Min Typ Max Unit
PWMSSOCG Short-circuit output
current OUT = GND 5 10 20 mA
PWMSSOCV Short-circuit output
current OUT = VDD -20 -10 -5 mA
PWMSSDT PWM short-circuit
detection time OUT = GND or OUT = VDD 5
PWM
clock
cycles
PWMSSRT PWM short circuit
recovery time 6
PWM
clock
cycles
BKPWMVOH
PWM output voltage
high in broken
condition
Broken VDD or broken GND,
OUT = high, RPU = 10kΩ,
PWMVOH=VDD-VOUT
00.4V
BKPWMVOL PWM output voltage
low in broken condition
Broken VDD or broken GND,
OUT = low, RPD = 10kΩ 00.4V
PWMF7 PWM frequency PWMFR = 111 112.5 125 137.5 Hz
Symbol Parameter Conditions Min Typ Max Unit