Hynix Semiconductor UB-DIMM Manual

Page 1
Rev. H (Oct. 2010)
Module Handling Guide Book
October.2010
Semiconductor
Rev. H (Oct. 2010)

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Rev. H (Oct. 2010)
1. Introduction
1. Overview
2. Understanding of memory module
3. Module Design Review
4. Memory Module Component Description
5. DDR2 Vs. DDR3 Module Design
6. DDR2 REG-DIMM, FB-DIMM
Vs. DDR3 REG-DIMM Design
2. Module Handling Guide
Contents

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Rev. H (Oct. 2010)
We have analyzed the causes of failure products for a long time. Most failure products are related with
wrong handling and mechanical damages. Those causes can raise the problem like booting failure and
wrong operation.
As the technology of product develops, the sizes of Capacitor, MLCC, Resistor, EEPROM and passive
elements are much smaller and thinner and their locations are placed on the edge of Module.
Therefore, all of products must be handled very carefully to prevent damages.
Especially, Registered DIMM which has a lot of elements is much fragile than any other product.
Recently, FBGA product needs a lot of caution because FBGAtype is made of ceramic which is weaker
than TSOP type from external damages.
Also, static electricity that could be produced by wrong handling is very important in Memory Module.
If static electricity occurs, a critical failure happen to product. All products must be placed on area
which is isolated from static electricity and operator always wear static-electricity proof gloves and
shoes when handling the product.
This guide book shows you a lot of failure cases when wrong handling and mechanical damage happen.
These failure case are based on a lot of investigations and experiments for a long time. The main purpose
is to reduce wrong handling and reinforce a process control in Hynix and to help customer keep their
handling-circumstance safe.
1. Overview
1. Introduction

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Rev. H (Oct. 2010)
2. Understanding of memory module
Memory Module ..?
It is made by Many Memory IC‟s at the Printed Circuit Board
Register DIMM
Unbuffer DIMM
SODIMM
Server
Desktop
Notebook
1. Introduction
Fully Buffered DIMM

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Rev. H (Oct. 2010)
3. Module Design Review
UB-DIMM
(Un-Buffered DIMM)
: Weak Point (Component Crack, Damage)
Major Cause is “Handling”
: Weak Point (PCB Damage, Scratch).
Major Cause is “Socket or Socket JIG”
SODIMM
(Small Outline DIMM)
: Weak Point (Component Crack, Damage)
Major Cause is “Handling”
: Weak Point (PCB Damage, Scratch).
Major Cause is “Socket or Socket JIG”
Reg-DIMM
(Registered DIMM)
: Weak Point (Component Crack, Damage)
Major Cause is “Handling”
: Weak Point (PCB Damage, Scratch).
Major Cause is “Socket or Socket JIG”
FB-DIMM
(Fully Buffered DIMM)
: Weak Point (Component Crack, Damage)
Major Cause is “Handling”
: Weak Point (PCB Damage, Scratch).
Major Cause is “Socket or Socket JIG”
1. Introduction

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Rev. H (Oct. 2010)
4. Memory module component Description
Component Picture Description
MLCC MLCC is the abbreviation of “Multi layer Ceramic Capacitor”.
A/R A/R is the abbreviation of “Array Resister”.
Chip Resister C/R is the abbreviation of “Chip Resister”.
PCB PCB is the abbreviation of “Print circuit board”.
EEPROM EEPROM is the abbreviation of “Electrically erasable
programmable read only memory”.
1. Introduction

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Rev. H (Oct. 2010)
DDR2 Package (FBGA Type) DDR3 Package (FBGA Type)
DDR2And DDR3 Package is used same package type
1. FBGA: Ball may not be operated as buffer
2. If pressure the edge of FBGA package, IC ball crack occur (No Support Point and the action of levers).
3. FBGA Package has weakness about PCB Bow and Twist.
5.DDR2 Vs. DDR3 Design (1/4)
Pressure on FBGA Package
FBGA: Ball may not be operated as buffer
Ball Crack
Weak Point
1. Introduction
Force
PCB Bow
Force
Force

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Rev. H (Oct. 2010)
DDR2 UB-DIMM DDR3 UB-DIMM
Difference of DDR2 Vs. DDR3 UB-DIMM
1. „0402‟ Type Cap is cracked easily on small pressure as compared with “0603” Type Cap.
2. As “0805” Cap height is higher than IC Height, “Cap” crack occur.
„0805‟ Type Cap
As “0805” Cap height is higher than IC
Height, “Cap” crack occur.
„0402‟ Type Cap
„0402‟ Type Cap is cracked easily
as compared with “0603” Type Cap
Weak Point
5.DDR2 Vs. DDR3 Design (2/4) 1. Introduction
„0402‟ Type Cap
„0402‟ Type Cap is cracked easily
as compared with “0603” Type Cap
„0402‟Type Cap is located the edge of module
that is cracked easily by handling miss

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Rev. H (Oct. 2010)
DDR2 REG-DIMM DDR3 REG-DIMM
Difference of DDR2 Vs. DDR3 Reg-DIMM
1. DDR3 module has relatively high density of the edge point and component size is smaller than DDR2
2. „0201‟Type Cap is smaller than „0402‟Type Cap about 3 times
Sameness of DDR2 & DDR3 Reg-DIMM
1. DRAM IC is located the top point that is cracked easily by external damage or external pressure
„0402‟ Type Cap.
Small size capacitor is cracked
easily
Weak Point
5.DDR2 Vs. DDR3 Design (3/4) 1. Introduction
Cap Crack
DRAM IC
DRAM IC of the top point is cracked easily
by external damage
DRAM IC
DRAM IC of the top point is cracked easily
by external damage
0402
0201
„0201‟ Type Cap
„0201‟Type Cap is cracked easer than
„0402‟Type Cap
crack

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Rev. H (Oct. 2010)
DDR2 SO-DIMM DDR3 SO-DIMM
Difference of DDR2 Vs. DDR3 SO-DIMM
1. DDR3 SO-DIMM has more „0402‟Type Cap than DDR2 SO-DIMM
2. DDR3 SO-DIMM has many „0402‟Tye capacitors located top area and „0402‟Type Cap crack occur more easily than
DDR2 SO-DIMM
Sameness of DDR2 & DDR3 SO-DIMM
1. „0402‟ Type Cap crack easy on small pressure as compared with “0603” Type Cap.
2. As “0805” Cap height is higher than IC Height, “Cap” crack occur.
„0402‟ Type Cap
„0402‟ Type Cap crack easy as compared
with “0603” Type Cap
„0805‟ Type Cap
As “0805” Cap height is higher than IC
Height, “Cap” crack occur.
Weak Point
5.DDR2 Vs. DDR3 Design (4/4) 1. Introduction
„0402‟ Type Cap
„0402‟ Type Cap is cracked easer than
„0603‟ Type Cap
Cap of top area is cracked easily by external
damage