NXP Semiconductors SA58670A Operational manual

1. General description
The SA58670A is a stereo, filter-free class-D audio amplifier which is available in an
HVQFN20 package with the exposed Die Attach Paddle (DAP).
The SA58670A features independent shutdown controls for each channel. The gain may
be set at 6 dB, 12 dB, 18 dB or 24 dB with gain select pins G0 and G1. Improved immunity
to noise and RF rectification is increased by high PSRR and differential circuit topology.
Fast start-up time and small package makes it an ideal choice for both cellular handsets
and PDAs.
The SA58670A delivers 1.4 W/channel at 5.0 V and 720 mW/channel at 3.6 V into 8 Ω. It
delivers 2.1 W/channel at 5.0 V into 4 Ω. The maximum power efficiency is excellent at
70 % to 74 % into 4 Ωand 84 % to 88 % into 8 Ω. The SA58670A provides thermal and
short-circuit shutdown protection.
2. Features
nOutput power:
u2.1 W/channel into 4 Ωat 5.0 V
u1.4 W/channel into 8 Ωat 5.0 V
u720 mW/channel into 8 Ωat 3.6 V
nSupply voltage: 2.5 V to 5.5 V
nIndependent shutdown control for each channel
nSelectable gain: 6 dB, 12 dB, 18 dB and 24 dB
nHigh SVRR: −77 dB at 217 Hz
nFast start-up time: 3.5 ms
nLow supply current
nLow shutdown current
nShort-circuit and thermal protection
nSpace savings with 4 mm ×4 mm HVQFN20 package
nLow junction to ambient thermal resistance of 24 K/W with exposed DAP
3. Applications
nWireless and cellular handset and PDA
nPortable DVD player
nUSB speaker
nNotebook PC
nPortable radio and gaming
SA58670A
2.1 W/channel stereo class-D audio amplifier
Rev. 02 — 23 October 2008 Product data sheet

SA58670A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 October 2008 2 of 24
NXP Semiconductors SA58670A
2.1 W/channel stereo class-D audio amplifier
nEducational toy
4. Ordering information
5. Block diagram
Table 1. Ordering information
Type number Package
Name Description Version
SA58670ABS HVQFN20 plastic thermal enhanced very thin quad flat package;
no leads; 20 terminals; body 4 ×4×0.85 mm SOT917-1
Refer to Table 6 for gain selection.
Fig 1. Block diagram
002aad663
SA58670A
SDR
16
17
INRP
INRN GAIN
ADJUST
6, 10
n.c.
right input PWM H-
BRIDGE
14
11
OUTRP
3, 13 PVDD
OUTRN
VDD
9 AVDD VDD
4, 12 PGND
18 AGND
INTERNAL
OSCILLATOR
20
19
INLP
INLN GAIN
ADJUST
left input PWM H-
BRIDGE
OUTLP
OUTLN
2
5
G0
G1
15
1
8
7
300 kΩ
SDL
300 kΩ
BIAS
CIRCUITRY
GND
SHORT-CIRCUIT
PROTECTION

SA58670A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 October 2008 3 of 24
NXP Semiconductors SA58670A
2.1 W/channel stereo class-D audio amplifier
6. Pinning information
6.1 Pinning
6.2 Pin description
(1) Exposed Die Attach Paddle (DAP).
Fig 2. Pin configuration for HVQFN20
002aad664
SA58670ABS
Transparent top view
OUTRN
PGND
OUTLN
PGND
PVDD PVDD
OUTLP OUTRP
G1 G0
n.c.
SDL
SDR
AVDD
n.c.
INLP INLN AGND INRN INRP
511
412
313
214
115
6 7 8 9
10
20 19 18 17 16
terminal 1
index area
DAP(1)
Table 2. Pin description
Symbol Pin Description
G1 1 gain select input 1
OUTLP 2 left channel positive output
PVDD 3 power supply voltage (level same as AVDD)
PGND 4 power ground
OUTLN 5 left channel negative output
n.c. 6 not connected
SDL 7 left channel shutdown input (active LOW)
SDR 8 right channel shutdown input (active LOW)
AVDD 9 analog supply voltage (level same as PVDD)
n.c. 10 not connected
OUTRN 11 right channel negative output
PGND 12 power ground
PVDD 13 power supply voltage (level same as AVDD)
OUTRP 14 right channel positive output
G0 15 gain select input 0
INRP 16 right channel positive input
INRN 17 right channel negative input
AGND 18 analog ground

SA58670A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 October 2008 4 of 24
NXP Semiconductors SA58670A
2.1 W/channel stereo class-D audio amplifier
7. Limiting values
[1] VDD is the supply voltage on pins PVDD and pin AVDD.
GND is the voltage ground on pins PGND and pin AGND.
INLN 19 left channel negative input
INLP 20 left channel positive input
- (DAP) exposed die attach paddle; connect to ground plane heat spreader
Table 2. Pin description
…continued
Symbol Pin Description
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Symbol Parameter Conditions Min Max Unit
VDD supply voltage Active mode −0.3 +6.0 V
Shutdown mode −0.3 +7.0 V
VIinput voltage pin SDL GND VDD V
pin SDR GND VDD V
other pins −0.3 VDD + 0.3 V
P power dissipation derating factor 41.6 mW/K
Tamb =25°C - 5.2 W
Tamb =75°C - 3.12 W
Tamb =85°C - 2.7 W
Tamb ambient temperature operating in free air −40 +85 °C
Tjjunction temperature operating −40 +150 °C
Tstg storage temperature −65 +85 °C
Vesd electrostatic discharge
voltage human body model ±2000 - V
machine model ±200 - V

SA58670A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 October 2008 5 of 24
NXP Semiconductors SA58670A
2.1 W/channel stereo class-D audio amplifier
8. Static characteristics
[1] VDD is the supply voltage on pins PVDD and pin AVDD.
GND is the ground supply voltage on pins PGND and pin AGND.
Table 4. Static characteristics
T
amb
=25 ° C; unless otherwise specified
[1]
.
Symbol Parameter Conditions Min Typ Max Unit
VDD supply voltage operating 2.5 - 5.5 V
IDD supply current VDD = 2.5 V; no load - 4 6 mA
VDD = 3.6 V; no load - 5 7.5 mA
VDD = 5.5 V; no load - 6 9 mA
IDD(sd) shutdown mode supply current no input signal;
VSDR =V
SDL = GND - 10 1000 nA
PSRR power supply rejection ratio VDD = 2.5 V to 5.5 V - −75 −55 dB
Vi(cm) common-mode input voltage 0.5 - VDD −0.8 V
CMRR common mode rejection ratio inputs are shorted together;
VDD = 2.5 V to 5.5 V -−69 −50 dB
VIH HIGH-level input voltage VDD = 2.5 V to 5.5 V;
pins SDL, SDR, G0, G1 1.3 - VDD V
VIL LOW-level input voltage VDD = 2.5 V to 5.5 V;
pins SDL, SDR, G0, G1 0 - 0.35 V
IIH HIGH-level input current VDD = 5.5 V; VI=V
DD --50 µA
IIL LOW-level input current VDD = 5.5 V; VI=0V --5 µA
fsw switching frequency VDD = 2.5 V to 5.5 V 250 300 350 kHz
Gv(cl) closed-loop voltage gain VG0 = VG1 = 0.35 V 5.5 6 6.5 dB
VG0 = VDD; VG1 = 0.35 V 11.5 12 12.5 dB
VG0 = 0.35 V; VG1 = VDD 17.5 18 18.5 dB
VG0 = VG1 = VDD 23.5 24 24.5 dB
Pins OUTLP, OUTLN, OUTRP and OUTRN
RDSon drain-source on-state resistance VDD = 2.5 V - 700 - mΩ
VDD = 3.6 V - 570 - mΩ
VDD = 5.5 V - 500 - mΩ
|VO(offset)|output offset voltage measureddifferentially;inputs
AC grounded; Gv(cl) = 6 dB;
VDD = 2.5 V to 5.5 V
- 5 10 mV
Zo(sd) shutdown mode output impedance VSDR = VSDL = 0.35 V - 2 - kΩ

SA58670A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 October 2008 6 of 24
NXP Semiconductors SA58670A
2.1 W/channel stereo class-D audio amplifier
9. Dynamic characteristics
[1] VDD is the supply voltage on pins PVDD and pin AVDD.
Table 5. Dynamic characteristics
T
amb
=25 ° C; R
L
=8 Ω ; unless otherwise specified
[1]
.
Symbol Parameter Conditions Min Typ Max Unit
Pooutput power per channel; f = 1 kHz; THD+N = 10 %
RL=8Ω; VDD = 3.6 V - 0.72 - W
RL=8Ω; VDD = 5.0 V - 1.4 - W
RL=4Ω; VDD = 5.0 V - 2.1 - W
THD+N total harmonic
distortion-plus-noise VDD = 5.0 V; Gv(cl) = 6 dB; f=1kHz
Po= 0.5 W - 0.11 - %
Po= 1.0 W - 0.14 - %
SVRR supply voltage ripple
rejection Gv(cl) = 6 dB; f = 217 Hz
VDD = 3.6 V - −73 - dB
VDD = 5.0 V - −77 - dB
CMRR common mode rejection
ratio VDD = 5.0 V; Gv(cl) = 6 dB; f = 217 Hz - −69 - dB
Ziinput impedance Gv(cl) = 6 dB - 28.1 - kΩ
Gv(cl) = 12 dB - 17.3 - kΩ
Gv(cl) = 18 dB - 9.8 - kΩ
Gv(cl) = 24 dB - 5.2 - kΩ
td(sd-startup) delay time from
shutdown to start-up VDD = 3.6 V - 3.5 - ms
Vn(o) output noise voltage VDD = 3.6 V; f = 20 Hz to 20 kHz;
inputs are AC grounded
no weighting - 35 - µV
A weighting - 27 - µV

SA58670A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 October 2008 7 of 24
NXP Semiconductors SA58670A
2.1 W/channel stereo class-D audio amplifier
10. Typical performance curves
a. Gv(cl) =24dB
b. Gv(cl) = 6 dB.
fi= 1 kHz.
(1) VDD = 2.5 V.
(2) VDD = 3.6 V.
(3) VDD = 5.0 V.
Fig 3. Total harmonic distortion-plus-noise as a function of output power; RL=8Ω
001aah484
Po(W)
10−510110−1
10−410−2 10−3
10−1
1
10
102
10−2
THD+N
(%)
(1) (2) (3)
001aah485
Po(W)
10−510110−1
10−410−2 10−3
10−1
1
10
102
10−2
THD+N
(%)
(1) (2) (3)

SA58670A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 October 2008 8 of 24
NXP Semiconductors SA58670A
2.1 W/channel stereo class-D audio amplifier
a. Gv(cl) =24dB.
b. Gv(cl) = 6 dB.
fi= 1 kHz.
(1) VDD = 2.5 V.
(2) VDD = 3.6 V.
(3) VDD = 5.0 V.
Fig 4. Total harmonic distortion-plus-noise as a function of output power; RL=4Ω
001aah486
Po(W)
10−510110−1
10−410−2 10−3
10−1
1
10
102
10−2
THD+N
(%)
(1) (2) (3)
001aah487
Po(W)
10−510110−1
10−410−2 10−3
10−1
1
10
102
10−2
THD+N
(%) (1) (2) (3)

SA58670A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 October 2008 9 of 24
NXP Semiconductors SA58670A
2.1 W/channel stereo class-D audio amplifier
(1) Po= 350 mW; Vi= 590 mV (RMS).
(2) Po= 240 mW; Vi= 490 mV (RMS).
(3) Po= 120 mW; Vi= 346 mV (RMS).
a. RL=4Ω
(1) Po= 260 mW; Vi= 721.1 mV (RMS).
(2) Po= 180 mW; Vi= 600 mV (RMS).
(3) Po= 90 mW; Vi= 424.3 mV (RMS).
b. RL=8Ω
Gv(cl) =6dB.
Fig 5. Total harmonic distortion-plus-noise as a function of frequency; VDD = 2.5 V
001aah488
f (Hz)
10 105
104 102103
10−1
10−2
1
10−3
THD+N
(%)
(1)
(2)
(3)
001aah489
f (Hz)
10 105
104 102103
10−1
10−2
1
10−3
THD+N
(%) (1)
(2)
(3)

SA58670A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 October 2008 10 of 24
NXP Semiconductors SA58670A
2.1 W/channel stereo class-D audio amplifier
(1) Po= 825 mW; Vi= 908.3 mV (RMS).
(2) Po= 550 mW; Vi= 741.6 mV (RMS).
(3) Po= 275 mW; Vi= 524.4 mV (RMS).
a. RL=4Ω
(1) Po= 560 mW; Vi= 1.058 V (RMS).
(2) Po= 375 mW; Vi= 866 mV (RMS).
(3) Po= 190 mW; Vi= 616.4 mV (RMS).
b. RL=8Ω
Gv(cl) =6dB.
Fig 6. Total harmonic distortion-plus-noise as a function of frequency; VDD = 3.6 V
001aah490
f (Hz)
10 105
104 102103
10−1
10−2
1
10−3
THD+N
(%) (1)
(2)
(3)
001aah491
f (Hz)
10 105
104 102103
10−1
10−2
1
10−3
THD+N
(%) (1)
(2)
(3)

SA58670A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 October 2008 11 of 24
NXP Semiconductors SA58670A
2.1 W/channel stereo class-D audio amplifier
(1) Po= 1.65 W; Vi= 1.285 V (RMS).
(2) Po= 1.1 W; Vi= 1.05 V (RMS).
(3) Po= 550 mW; Vi= 741.6 mV (RMS).
a. RL=4Ω
(1) Po= 1.16 W; Vi= 1.523 V (RMS).
(2) Po= 775 mW; Vi= 1.245 V (RMS).
(3) Po= 380 mW; Vi= 871.8 mV (RMS).
b. RL=8Ω
Gv(cl) =6dB.
Fig 7. Total harmonic distortion-plus-noise as a function of frequency; VDD = 5.0 V
001aah492
f (Hz)
10 105
104 102103
10−1
10−2
1
10−3
THD+N
(%)
(1)
(2)
(3)
001aah493
f (Hz)
10 105
104 102103
10−2
10−1
1
10
10−3
THD+N
(%) (1)
(2)
(3)

SA58670A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 October 2008 12 of 24
NXP Semiconductors SA58670A
2.1 W/channel stereo class-D audio amplifier
(1) VDD = 3.6 V; L channel to R channel.
(2) VDD = 3.6 V; R channel to L channel.
(3) VDD = 5.0 V; L channel to R channel.
(4) VDD = 5.0 V; R channel to L channel.
Fig 8. Crosstalk (stepped all-to-one) as a function of frequency
(1) Left channel.
(2) Right channel.
Fig 9. Noise output voltage (RMS value) as a function of frequency
001aah495
f (Hz)
103105
104
−100
−80
−60
αct
(dB)
−120
(3)
(2)
(1)
(4)
f (Hz)104
10−4
10−5
10−3
10−6
Vn(o)
(V)
102 10 103
(1)
(2)
001aah497

SA58670A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 October 2008 13 of 24
NXP Semiconductors SA58670A
2.1 W/channel stereo class-D audio amplifier
a. RL=4Ω
b. RL=8Ω
(1) VDD = 2.5 V.
(2) VDD = 3.6 V.
(3) VDD = 5.0 V.
Fig 10. Crosstalk (one-to-one) as a function of frequency
f (kHz)
2 20
001aah505
−100
−80
−60
−120 8144 6 10 12 16 18
αct
(dB)
(2)
(1)
(3)
f (kHz)
2 20
001aah506
−100
−80
−60
αct
(dB)
−120 8144 6 10 12 16 18
(2)
(3)
(1)

SA58670A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 October 2008 14 of 24
NXP Semiconductors SA58670A
2.1 W/channel stereo class-D audio amplifier
(1) left channel; RL=8Ω.
(2) right channel; RL=4Ω.
(3) right channel; RL=8Ω.
Fig 11. Supply voltage as a function of shutdown
voltage Fig 12. Supply current as a function of supply voltage
VSDR; VSDL (V)
0321
001aah507
2
4
6
VDD
(V)
0
2.5 V
3.6 V
5 V
VDD (V)
2.5 5.54.53.5
001aah508
3.5
4.5
5.5
IDD
(mA)
2.5
(1)
(2)
(3)
a. RL=4Ωb. RL=8Ω
(1) VDD = 2.5 V.
(2) VDD = 3.6 V.
(3) VDD = 5.0 V.
Fig 13. Supply current as a function of output power
0
1200
800
400
1600
IDD
(mA)
Po(W)
0 2.01.60.8 1.20.4
001aah509
(1) (2) (3)
0
600
400
200
800
IDD
(mA)
Po(W)
0 1.61.20.4 0.8
001aah510
(1) (2) (3)

SA58670A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 October 2008 15 of 24
NXP Semiconductors SA58670A
2.1 W/channel stereo class-D audio amplifier
a. RL=4Ωb. RL=8Ω
(1) VDD = 5.0 V.
(2) VDD = 3.6 V.
(3) VDD = 2.5 V.
Fig 14. Power dissipation as a function of output power
0
0.6
0.4
0.2
0.8
P
(W)
Po(W)
0 2.01.60.8 1.20.4
001aah511
(1)
(3)
(2)
0
0.3
0.2
0.1
0.4
P
(W)
Po(W)
0 1.61.20.4 0.8
001aah512
(1)
(3)
(2)
a. RL=4Ωb. RL=8Ω
(1) VDD = 5.0 V.
(2) VDD = 3.6 V.
(3) VDD = 2.5 V.
Fig 15. Output power efficiency as a function of output power
40
60
20
80
100
ηpo
0
Po(W)
0 2.01.60.8 1.20.4
001aah513
(1)
(3) (2)
40
60
20
80
100
ηpo
0
Po(W)
0 1.61.20.4 0.8
001aah514
(2)
(1)
(3)

SA58670A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 October 2008 16 of 24
NXP Semiconductors SA58670A
2.1 W/channel stereo class-D audio amplifier
11. Application information
11.1 Power supply decoupling considerations
The SA58670A is a stereo class-D audio amplifier that requires proper supply voltage
decoupling to ensure the rated performance for THD+N and power efficiency. To decouple
high frequency transients, supply voltage spikes and digital noise on the supply voltage
bus line, a low Equivalent Series Resistance (ESR) capacitor of typically 1 µF is placed as
close as possible to the PVDD pins of the SA58670A. It is important to place the
decoupling capacitor at the supply voltage pins of the SA58670A because any resistance
or inductance in the PCB trace between the SA58670A and the capacitor can cause a
loss in efficiency. Additional decoupling using a larger capacitor, 4.7 µF or greater, may be
done on the supply voltage connection on the PCB to filter low frequency signals. Usually
this is not required due to high PSRR of the SA58670A.
11.2 Input capacitor selection
The SA58670A does not require input coupling capacitors when used with a differential
audio source that is biased from 0.5 V to VDD −0.8 V. In other words, the input signal must
be biased within the common-mode input voltage (Vi(cm)) range. If high-pass filtering is
required or if it is driven using a single-ended source, input coupling capacitors are
required.
The 3 dB cut-off frequency created by the input coupling capacitor and the input resistors
(see Table 6) is calculated by Equation 1:
(1)
Fig 16. SA58670A application schematic
002aad665
SA58670A
OUTRP
OUTRN
10 µF
1 nF
1 nF
FB
FB
1 nF
1 nF
OUTLP
OUTLN
VDD
G1
VDD
PVDD
PGND
1 µF
VDD
10 µF
1 µF
VDD
SDL SDR AVDD
10 µF1 µF
PGND
VDD
PVDD
G0
INLP
1 µF
INLN
1 µF
differential inputs
left channel
INRN
1 µF
INRP
1 µF
differential inputs
right channel
AGND
FB
FB
f3dB–1
2πRi ×Ci ×
------------------------------
=

SA58670A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 October 2008 17 of 24
NXP Semiconductors SA58670A
2.1 W/channel stereo class-D audio amplifier
Since the value of the input decoupling capacitor and the input resistance determined by
the gain setting affects the low frequency performance of the audio amplifier, it is
important to consider this during the system design. Small speakers in wireless and
cellular phones usually do not respond well to low frequency signals, so the 3 dB cut-off
frequency may be increased to block the low frequency signals to the speakers. Not using
input coupling capacitors may increase the output offset voltage.
Equation 2 is solved for Ci:
(2)
11.3 PCB layout considerations
Component location is very important for performance of the SA58670A. Place all
external components very close to the SA58670A. Placing decoupling capacitors directly
at the power supply voltage pins increases efficiency because the resistance and
inductance in the trace between the SA58670A power supply voltage pins and the
decoupling capacitor causes a loss in power efficiency.
The trace width and routing are also very important for power output and noise
considerations.
For high current pins (PVDD, PGND and audio output), the trace widths should be
maximized to ensure proper performance and output power. Use at least 500 µm wide
traces.
For the input pins (INRP, INRN, INLP and INLN), the traces must be symmetrical and run
side-by-side to maximize common-mode cancellation.
11.4 Filter-free operation and ferrite bead filters
A ferrite bead low-pass filter can be used to reduce radio frequency emissions in
applications that have circuits sensitive to frequencies greater than 1 MHz. A ferrite bead
low-pass filter functions well for amplifiers that must pass FCC unintentional radiation
requirements for frequencies greater than 30 MHz. Choose a bead with high-impedance
at high frequencies and very low-impedance at low frequencies. In order to prevent
distortion of the output signal, select a ferrite bead with adequate current rating.
For applications in which there are circuits that are EMI sensitive to low frequencies
(< 1 MHz) and there are long leads from amplifier to speaker, it is necessary to use an LC
output filter.
Table 6. Gain selection
G1 G0 Gain (V/V) Gain (dB) Input impedance (kΩ)
LOW LOW 2 6 28.1
LOW HIGH 4 12 17.3
HIGH LOW 8 18 9.8
HIGH HIGH 16 24 5.2
Ci1
2πRi ×f3dB– ×
--------------------------------------
=

SA58670A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 October 2008 18 of 24
NXP Semiconductors SA58670A
2.1 W/channel stereo class-D audio amplifier
11.5 Efficiency and thermal considerations
The maximum ambient operating temperature depends on the heat transferring ability of
the heat spreader on the PCB layout. In Table 3 “Limiting values”, the power derating
factor is given as 41.6 mW/K. The device thermal resistance, Rth(j-a) is the reciprocal of the
power derating factor. Convert the power derating factor to Rth(j-a) by Equation 3:
(3)
For a maximum allowable junction temperature Tj= 150 °C and Rth(j-a) = 24 K/W and a
maximum device dissipation of 1.5 W (750 mW per channel) and for 2.1 W per channel
output power, 4 Ωload, 5 V supply, the maximum ambient temperature is calculated using
Equation 4:
(4)
The maximum ambient temperature is 114 °C at maximum power dissipation for 5 V
supply and 4 Ωload. If the junction temperature of the SA58670A rises above 150 °C, the
thermal protection circuitry turns the SA58670A off; this prevents damage to IC. Using
speakers greater than 4 Ωfurther enhances thermal performance and battery lifetime by
reducing the output load current and increasing amplifier efficiency.
11.6 Additional thermal information
The SA58670A HVQFN20 package incorporates an exposed DAP that is designed to
solder the mount directly to the PCB heat spreader. By the use of thermal vias, the DAP
may be soldered directly to a ground plane or special heat sinking layer designed into the
PCB. The thickness and area of the heat spreader may be maximized to optimize heat
transfer and achieve lowest package thermal resistance.
12. Test information
Rth j-a() 1
derating factor
------------------------------------------1
0.0416
---------------- 24 K/W===
Tamb max()Tj max()Rth j-a()Pmax ×()–150 24 1.5×()–114 °C===
Fig 17. Test circuit
002aad417
POWER
SUPPLY
+−
INxP
INxN
OUTxP
OUTxN
15 µH
15 µH
DUT RLAUX0025
30 kHz
LOW-PASS FILTER
AP585
MEASUREMENT
INPUTS
AP585
AUDIO
ANALYZER

SA58670A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 October 2008 19 of 24
NXP Semiconductors SA58670A
2.1 W/channel stereo class-D audio amplifier
13. Package outline
Fig 18. Package outline SOT917-1 (HVQFN20)
0.51
A1Eh
b
UNIT ye
0.2
c
REFERENCES
OUTLINE
VERSION EUROPEAN PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 4.1
3.9
Dh
2.45
2.15
y1
4.1
3.9 2.45 2.15
e1
2
e2
2
0.30
0.18
0.05
0.00 0.05 0.1
DIMENSIONS (mm are the original dimensions)
SOT917 -1 MO-220- - - - - -
0.6
0.4
L
0.1
v
0.05
w
0 2.5 5 mm
scale
SOT917-1
HVQFN20: plastic thermal enhanced very thin quad flat package; no leads;
20 terminals; body 4 x 4 x 0.85 mm
A(1)
max.
05-10-08
05-10-31
E(1) D(1)
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
y
y1C
X
C
D
E
BA
terminal 1
index area
e
L
Eh
Dh
e
e1
b
610
20 16
15
11
5
1
e2
AC
CB
vM
wM
terminal 1
index area
detail X
AA1c

SA58670A_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 23 October 2008 20 of 24
NXP Semiconductors SA58670A
2.1 W/channel stereo class-D audio amplifier
14. Soldering of SMD packages
This text provides a very brief insight into a complex technology. A more in-depth account
of soldering ICs can be found in Application Note AN10365 “Surface mount reflow
soldering description” .
14.1 Introduction to soldering
Soldering is one of the most common methods through which packages are attached to
Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both
the mechanical and the electrical connection. There is no single soldering method that is
ideal for all IC packages. Wave soldering is often preferred when through-hole and
Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not
suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high
densities that come with increased miniaturization.
14.2 Wave and reflow soldering
Wave soldering is a joining technology in which the joints are made by solder coming from
a standing wave of liquid solder. The wave soldering process is suitable for the following:
•Through-hole components
•Leaded or leadless SMDs, which are glued to the surface of the printed circuit board
Not all SMDs can be wave soldered. Packages with solder balls, and some leadless
packages which have solder lands underneath the body, cannot be wave soldered. Also,
leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered,
due to an increased probability of bridging.
The reflow soldering process involves applying solder paste to a board, followed by
component placement and exposure to a temperature profile. Leaded packages,
packages with solder balls, and leadless packages are all reflow solderable.
Key characteristics in both wave and reflow soldering are:
•Board specifications, including the board finish, solder masks and vias
•Package footprints, including solder thieves and orientation
•The moisture sensitivity level of the packages
•Package placement
•Inspection and repair
•Lead-free soldering versus SnPb soldering
14.3 Wave soldering
Key characteristics in wave soldering are:
•Process issues, such as application of adhesive and flux, clinching of leads, board
transport, the solder wave parameters, and the time during which components are
exposed to the wave
•Solder bath specifications, including temperature and impurities