NXP Semiconductors BGM1012 User manual

DATA SHEET
Product specification
Supersedes data of 2002 May 16 2002 Sep 06
DISCRETE SEMICONDUCTORS
BGM1012
MMIC wideband amplifier
dbook, halfpage
MBD128

2002 Sep 06 2
NXP Semiconductors Product specification
MMIC wideband amplifier BGM1012
FEATURES
Internally matched to 50 
Very wide frequency range (4 GHz at 3 dB bandwidth)
Very flat 20 dB gain (DC to 2.9 GHz at 1 dB flatness)
10 dBm saturated output power at 1 GHz
High linearity (18 dBm IP3(out) at 1 GHz)
Low current (14.6 mA)
Unconditionally stable.
APPLICATIONS
LNB IF amplifiers
Cable systems
ISM
General purpose.
DESCRIPTION
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
PINNING
PIN DESCRIPTION
1V
S
2, 5 GND2
3RFout
4GND1
6RFin
MAM455
132
41
63
2, 54
56
Top view
Fig.1 Simplified outline (SOT363) and symbol.
Marking code: C2-.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VSDC supply voltage 3 4 V
ISDC supply current 14.6 mA
s212insertion power gain f = 1 GHz 20.1 dB
NF noise figure f = 1 GHz 4.8 dB
PL(sat) saturated load power f = 1 GHz 9.7 dBm
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.

2002 Sep 06 3
NXP Semiconductors Product specification
MMIC wideband amplifier BGM1012
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VSDC supply voltage RF input AC coupled 4V
ISsupply current 50 mA
Ptot total power dissipation Ts90 C200 mW
Tstg storage temperature 65 +150 C
Tjoperating junction temperature 150 C
PDmaximum drive power 10 dBm
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to
solder point Ptot = 200 mW; Ts90 C300K/W

2002 Sep 06 4
NXP Semiconductors Product specification
MMIC wideband amplifier BGM1012
CHARACTERISTICS
VS=3V;I
S=14.6mA;T j=25C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ISsupply current 11 14.6 19 mA
s212insertion power gain f = 100 MHz 19 19.5 20 dB
f = 1 GHz 19 20.1 21 dB
f = 1.8 GHz 19 20.4 21 dB
f = 2.2 GHz 19 20.4 22 dB
f = 2.6 GHz 18 19.9 21 dB
f = 3 GHz 16 18.7 20 dB
RLIN return losses input f = 1 GHz 9 11 dB
f = 2.2 GHz 13 15 dB
RLOUT return losses output f = 1 GHz 11 14 dB
f = 2.2 GHz 10 13 dB
s122isolation f = 1 GHz 30 33 dB
f = 2.2 GHz 35 38 dB
NF noise figure f = 1 GHz 4.8 5.1 dB
f=2.2GHz 4.9 5.3 dB
BW bandwidth at s2123 dB below flat gain at 1 GHz 3.1 3.6 GHz
K stability factor f = 1 GHz 1.5 2.1 
f=2.2GHz 3 3.4 
PL(sat) saturated load power f = 1 GHz 8 9.7 dBm
f = 2.2 GHz 3.5 5.6 dBm
PL1dB load power at 1 dB gain compression; f = 1 GHz 4 6.0 dBm
at 1 dB gain compression; f = 2.2 GHz 1.5 3.4 dBm
IP3(in) input intercept point f = 1 GHz 42dBm
f=2.2GHz 97dBm
IP3(out) output intercept point f = 1 GHz 16 18 dBm
f = 2.2 GHz 11 13 dBm

2002 Sep 06 5
NXP Semiconductors Product specification
MMIC wideband amplifier BGM1012
APPLICATION INFORMATION
Figure 2 shows a typical application circuit for the
BGM1012 MMIC. The device is internally matched to
50 , and therefore does not need any external matching.
The value of the input and output DC blocking capacitors
C2 and C3 should not be more than 100 pF for
applications above 100 MHz.However, whenthedeviceis
operated below 100 MHz, the capacitor value should be
increased.
The nominal value of the RF choke L1 is 100 nH. At
frequencies below 100 MHz this value should be
increased to 220 nH. At frequencies above 1 GHz a much
lower value (e.g. 10 nH) can be used to improve return
losses. For optimal results, a good quality chip inductor
such as the TDK MLG 1608 (0603), or a wire-wound SMD
type should be chosen.
Both the RF choke L1 and the 22 nF supply decoupling
capacitor C1 should be located as closely as possible to
the MMIC.
Separate paths must be used for the ground planes of the
groundpinsGND1andGND2,and thesepathsmustbe as
short as possible. When using vias, use multiple vias per
pin in order to limit ground path inductance.
Figure 3 shows two cascaded MMICs. This configuration
doubles overall gain while preserving broadband
characteristics. Supply decoupling and grounding
conditions for each MMIC are the same as those for the
circuit of Fig.2.
The excellent wideband characteristics of the MMIC make
it an ideal building block in IF amplifier applications such
as LBNs (see Fig.4).
As a buffer amplifier between an LNA and a mixer in a
receiver circuit, the MMIC offers an easy matching, low
noise solution (see Fig.5).
InFig.6theMMICis used as adrivertothe power amplifier
as part of a transmitter circuit. Good linear performance
and matched input and output offer quick design solutions
in such applications.
handbook, halfpage
MGU436
RF outRF in
C1 L1
C2 C3
GND2GND1
Vs
Vs
RF input RF output
Fig.2 Typical application circuit.
handbook, halfpage DC-block
100 pF DC-block 100 pF
DC-block
100 pF
input output
MGU437
Fig.3 Easy cascading application circuit.
handbook, halfpage
from RF
circuit to IF circuit or demodulator
MGU438
mixer
oscillator
wideband
amplifier
Fig.4 Application as IF amplifier.
handbook, halfpage
antenna to IF circuit
or demodulator
MGU439
mixer
oscillator
LNA wideband
amplifier
Fig.5 Application as RF amplifier.
handbook, halfpage
from modulation
or IF circuit to power amplifier
MGU440
mixer
oscillator
wideband
amplifier
Fig.6 Application as driver amplifier.

2002 Sep 06 6
NXP Semiconductors Product specification
MMIC wideband amplifier BGM1012
handbook, full pagewidth
MLD910
0
0.2
0.6
0.4
0.8
1.0
1.0
+5
+2
+1
+0.5
+0.2
0
−0.2
−0.5
−1
−2
−5
0.2 0.5 4 GHz 100 MHz2 5
180°
135°
90°
45°
0°
−45°
−90°
−135°
Fig.7 Input reflection coefficient (s11); typical values.
IS=14.6mA;V
S=3V;P D=30 dBm; ZO=50
handbook, full pagewidth
MLD911
0
0.2
0.6
0.4
0.8
1.0
1.0
+5
+2
+1
+0.5
+0.2
0
−0.2
−0.5
−1
−2
−5
0.2 0.5
4 GHz
100 MHz
1 2 5
180°
135°
90°
45°
0°
−45°
−90°
−135°
Fig.8 Output reflection coefficient (s22); typical values.
IS=14.6mA;V
S=3V;P D=30 dBm; ZO=50

2002 Sep 06 7
NXP Semiconductors Product specification
MMIC wideband amplifier BGM1012
handbook, halfpage
0 1000 f (MHz) 2000 4000
0
−50
−10
3000
−20
−30
−40
MLD912
s12 2
(dB)
Fig.9 Isolation (s122)asafunctionoffrequency;
typical values.
IS=14.6mA;V
S=3V;P D=30 dBm; ZO=50
handbook, halfpage
0f (MHz)
(1)
(3)
25
20
15
10 1000 2000 4000
3000
MLD913
s21 2
(dB)
(2)
Fig.10 Insertion gain (s212) as a function of
frequency; typical values.
PD=30 dBm; ZO=50
(1) IS=18.7mA;V
S=3.3V.
(2) IS=14.6mA;V
S=3V.
(3) IS=10.6mA;V
S=2.7V.
handbook, halfpage
−40 −30 PD(dBm)
PL
(dBm)
−20 0
20
10
−10
−20
0
−10
MLD914
(1) (2)
(3)
Fig.11 Load power as a function of drive power at
1 GHz; typical values.
f=1GHz;Z
O=50
(1) VS=3.3V.
(2) VS=3V.
(3) VS=2.7V.
handbook, halfpage
−40 −30 PD(dBm)
PL
(dBm)
−20 0
(1)
(2)(3)
20
10
−10
−20
0
−10
MLD915
Fig.12 Load power as a function of drive power at
2.2 GHz; typical values.
f=2.2GHz;Z
O=50
(1) VS=3.3V.
(2) VS=3V.
(3) VS=2.7V.

2002 Sep 06 8
NXP Semiconductors Product specification
MMIC wideband amplifier BGM1012
handbook, halfpage
0
(1)
(2)
(3)
1000 2000 f (MHz)
NF
(dB)
3000
5.5
4.5
5.3
5.1
4.9
4.7
MLD916
Fig.13 Noise figure as a function of frequency;
typical values.
ZO=50
(1) IS=10.6mA;V
S=2.7V.
(2) IS=14.6mA;V
S=3V.
(3) IS=18.7mA;V
S=3.3V.
handbook, halfpage
0f (MHz)
12
8
4
01000 2000 40003000
MLD917
K
Fig.14 Stability factor as a function of frequency;
typical values.
IS=14.6mA;V
S=3V;P D=30 dBm; ZO=50

2002 Sep 06 9 NXP Semiconductors Product specification
MMIC wideband amplifier BGM1012
Scattering parameters
VS=3V;I
S=14.6mA;P D=30 dBm; ZO=50; Tamb =25C.
f(MHz) s11 s21 s12 s22 K-
FACTOR
MAGNITUDE
(ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg)
100 0.25122 14.607 9.33681 12.018 0.032124 16.445 0.26458 64.156 1.6
200 0.27070 2.759 9.42458 5.676 0.028303 6.37 0.20645 64.153 1.8
400 0.27979 7.969 9.63627 8.447 0.026297 4.545 0.1543 52.558 1.9
600 0.28323 14.78 9.76543 19.02 0.024833 10.24 0.15203 39.347 1.9
800 0.28557 20.13 9.93782 27.93 0.023234 14.62 0.16867 27.926 2.0
1000 0.28673 24.14 10.03633 36.88 0.021523 17.42 0.19196 19.293 2.1
1200 0.28517 27.57 10.11638 46.47 0.019830 19.83 0.21421 12.703 2.2
1400 0.27902 29.93 10.26450 56.05 0.018230 21.14 0.23292 7.154 2.4
1600 0.26682 31.81 10.40572 65.76 0.016902 21.62 0.24605 2.582 2.5
1800 0.24746 33.12 10.44088 76.97 0.015759 22.32 0.25113 1.26 2.7
2000 0.21894 33.8 10.46224 88.33 0.014310 22.64 0.24367 4.817 3.0
2200 0.18164 32.67 10.45202 100.3 0.013012 23.13 0.22184 7.573 3.4
2400 0.14000 26.75 10.34342 112.6 0.011826 23.27 0.18787 8.489 3.9
2600 0.10418 10.16 9.87989 122.9 0.010171 23.23 0.13049 4.601 4.9
2800 0.09469 15.051 9.20393 129.5 0.008664 16.9 0.1294 9.578 6.2
3000 0.10595 33.415 8.68177 135.4 0.007541 9.957 0.1127 18.402 7.5
3200 0.11609 42.888 8.18809 142.2 0.006655 0.835 0.092234 23.406 9.0
3400 0.10827 50.017 7.93039 151.5 0.006042 12.444 0.059268 26.453 10.3
3600 0.09866 60.967 7.77538 162.2 0.006205 29.297 0.015829 38.211 10.3
3800 0.08693 80.355 7.33775 172.6 0.007039 40.351 0.028159 152.8 9.6
4000 0.10090 102.07 6.90878 177.1 0.008241 46.053 0.075298 133.1 8.7

2002 Sep 06 10
NXP Semiconductors Product specification
MMIC wideband amplifier BGM1012
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT363 SC-88
wBM
bp
D
e1
e
pin 1
index A
A1
Lp
Q
detail X
HE
E
vMA
AB
y
0 1 2 mm
scale
c
X
132
456
Plastic surface-mounted package; 6 leads SOT363
UNIT A1
max bpcDEe1HELpQywv
mm 0.1 0.30
0.20 2.2
1.8
0.25
0.10 1.35 1.15 0.65
e
1.3 2.2
2.0 0.2 0.10.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.25 0.15
A
1.1
0.8
04-11-08
06-03-16