NXP Semiconductors BGA6489 Operational manual

1. Product profile
1.1 General description
The BGA6489 is a silicon Monolithic Microwave Integrated Circuit (MMIC) wideband
medium power amplifier with internal matching circuit in a 3-pin SOT89 plastic, low
thermal resistance, SMD package.
The BGA6x89 series of medium power gain blocks are resistive feedback Darlington
configured amplifiers. Resistive feedback provides large bandwidth with high accuracy.
1.2 Features
nBroadband 50 Ωgain block
n20 dBm output power
nSOT89 package
nSingle supply voltage needed
1.3 Applications
nBroadband medium power gain blocks
nSmall signal high linearity amplifiers
nVariable gain and high output power in combination with the BGA2031
nCellular, PCS and CDPD
nIF/RF buffer amplifier
nWireless data SONET
nOscillator amplifier, final PA
nDrivers for CATV amplifier
BGA6489
MMIC wideband medium power amplifier
Rev. 02 — 15 June 2009 Product data sheet
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.

BGA6489_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 June 2009 2 of 13
NXP Semiconductors BGA6489
MMIC wideband medium power amplifier
1.4 Quick reference data
2. Pinning information
3. Ordering information
4. Marking
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDDC device voltage on pin 1; IS= 78 mA - 5.1 - V
ISDC supply current VS= 8 V; R1 = 39 Ω;
Tj=25°C-78-mA
|s21|2insertion power gain f = 1950 MHz - 16 - dB
NF noise figure f = 1950 MHz - 3.3 - dB
PL1dB load power at 1 dB
gain compression f = 850 MHz - 20 - dBm
f = 1950 MHz - 17 - dBm
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 RF_OUT/BIAS
2 GND
3 RF_IN
321
sym130
2
13
Table 3. Ordering information
Type number Package
Name Description Version
BGA6489 SC-62 plastic surface-mounted package; collector pad for
good heat transfer; 3 leads SOT89
Table 4. Marking codes
Type number Marking code
BGA6489 4A

BGA6489_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 June 2009 3 of 13
NXP Semiconductors BGA6489
MMIC wideband medium power amplifier
5. Limiting values
[1] Tsp is the temperature at the solder point of the ground lead, pin 2.
6. Thermal characteristics
[1] Tsp is the temperature at the solder point of the ground lead, pin 2.
7. Characteristics
[1] VS= DC operating supply voltage applied to Rbias; see Figure 10
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDDC device voltage on pin 1; RF input AC coupled - 6 V
ISDC supply current - 150 mA
Ptot total power dissipation Tsp ≤70 °C[1] - 800 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature - 150 °C
PDmaximum drive power - 15 dBm
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-sp) thermal resistance from junction to solder point Tsp ≤70 °C[1] 100 K/W
Table 7. Static characteristics
V
S
= 8 V; T
j
= 25 ° C; R
bias
=39 Ω
[1]
Symbol Parameter Conditions Min Typ Max Unit
VDDC device voltage on pin 1; IS=78mA - 5.1 - V
ISsupply current 70 78 86 mA
Table 8. Characteristics
V
S
=8V;I
S
= 78 mA; T
amb
=25 ° C; IP3
(out)
tone spacing = 1 MHz; P
L
= 0 dB per tone, R
bias
=39 Ω ;
Z
L
=Z
S
=50 Ω ; unless otherwise specified; see Figure 10.
Symbol Parameter Conditions Min Typ Max Unit
|s21|2Insertion power gain f = 850 MHz - 20 - dB
f = 1950 MHz - 16 - dB
f = 2500 MHz - 15 - dB
RLIN return losses input f = 850 MHz - 14 - dB
f = 1950 MHz - 16 - dB
f = 2500 MHz - 19 - dB
RLOUT return losses output f = 850 MHz - 16 - dB
f = 1950 MHz - 12 - dB
f = 2500 MHz - 10 - dB

BGA6489_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 June 2009 4 of 13
NXP Semiconductors BGA6489
MMIC wideband medium power amplifier
NF noise figure f = 850 MHz - 3.1 - dB
f = 1950 MHz - 3.3 - dB
f = 2500 MHz - 3.4 - dB
K stability factor f = 850 MHz - 1.2 -
f = 2500 MHz - 1.3 -
PL1dB load power at 1 dB gain compression f = 850 MHz - 20 - dBm
f = 1950 MHz - 17 - dBm
IP3(in) input intercept point f = 850 MHz - 13 - dBm
f = 2500 MHz - 12 - dBm
IP3(out) output intercept point f = 850 MHz - 33 - dBm
f = 2500 MHz - 27 - dBm
IS= 78 mA; VS= 8 V; PD= −30 dBm; ZO= 50 Ω.
Fig 1. Input reflection coefficient (s11); typical values
Table 8. Characteristics
…continued
V
S
=8V;I
S
= 78 mA; T
amb
=25 ° C; IP3
(out)
tone spacing = 1 MHz; P
L
= 0 dB per tone, R
bias
=39 Ω ;
Z
L
=Z
S
=50 Ω ; unless otherwise specified; see Figure 10.
Symbol Parameter Conditions Min Typ Max Unit
mgx400
90°
−90°
5
0.50.2
+0.2
0
+2
+5
−5
−2
−0.2
+0.5
−0.5
+1
−1
210 0
0.2
0.6
0.4
0.8
1.0
1.0
−45°−135°
45°135°
180°0°
2.6 GHz
200 MHz

BGA6489_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 June 2009 5 of 13
NXP Semiconductors BGA6489
MMIC wideband medium power amplifier
IS= 78 mA; VS= 8 V; PD= −30 dBm; ZO= 50 Ω.
Fig 2. Output reflection coefficient (s22); typical values
mgx401
90°
−90°
5
0.50.2
+0.2
0
+2
+5
−5
−2
−0.2
+0.5
−0.5
+1
−1
2
110 0
0.2
0.6
0.4
0.8
1.0
1.0
−45°−135°
45°135°
180°0°
2.6 GHz
200 MHz
IS= 78 mA; VS= 8 V; PD= −30 dBm; ZO= 50 Ω.I
S= 78 mA; VS= 8 V; PD= −30 dBm; ZO= 50 Ω.
Fig 3. Insertion power gain (|s21|2) as a function of
frequency; typical values Fig 4. Isolation (|s12|2) as a function of frequency; typical values
0
25
15
20
5
10
mgx403
0 1500500 2000 2500
f (MHz)
1000
|s21|2
(dB)
0 1500500 2000 2500
f (MHz)
1000
mgx402
0
−10
−30
−40
−20
|s12|2
(dB)

BGA6489_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 June 2009 6 of 13
NXP Semiconductors BGA6489
MMIC wideband medium power amplifier
IS= 78 mA; VS= 8 V; ZO= 50 Ω.I
S= 78 mA; VS= 8 V; ZO= 50 Ω.
Fig 5. Load power as a function of frequency; typical
values Fig 6. Output intercept as a function of frequency; typical values
PL1dB
(dBm)
0 1500500 2000 2500
f (MHz)
1000
0
25
15
20
5
10
mgx404 mgx405
IP3(out)
(dBm)
0
40
30
10
20
0 1500500 2000 2500
f (MHz)
1000
IS= 78 mA; VS= 8 V; ZO= 50 Ω.I
S= 78 mA; VS= 8 V; ZO= 50 Ω.
Fig 7. Stability factor as a function of frequency;
typical values Fig 8. Noise figure as a function of frequency; typical values
K
0 1500500 2000 2500
f (MHz)
1000
0
5
3
4
1
2
mgx407
NF
(dB)
0
5
4
3
1
2
mgx406
0 1500500 2000 2500
f (MHz)
1000

BGA6489_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 June 2009 7 of 13
NXP Semiconductors BGA6489
MMIC wideband medium power amplifier
8. Application information
Figure 10 shows a typical application circuit for the BGA6489 MMIC. The device is
internally matched to 50 Ωand therefore does not require any external matching. The
value of the input and output DC blocking capacitors C1 and C2 depends on the operating
frequency; see Table 9. Capacitors C1 and C2 are used in conjunction with L1 and C3 to
fine tune the input and output impedance. Capacitor C4 is a supply decoupling capacitor.
A1µF capacitor (C5) can be added for optimum supply decoupling. The external
components should be placed as close as possible to the MMIC. When using via holes,
use multiple via holes per pin in order to limit ground path induction. Resistor R1 is a bias
resistor providing DC current stability with temperature.
VS= 8 V; Rbias =39Ω.
Fig 9. Supply current as function of operating junction temperature; typical values
Is
(mA)
−40 40−20 0 60 80
Tj(°C)
20
60
100
90
70
80
mgx408
(1) Optional capacitor for optimum supply decoupling.
(2) R1 values at operating supply voltage:
VS= 6 V; R1 = 27 Ω.
VS= 8 V; R1 = 39 Ω.
VS= 11 V; R1 = 82 Ω.
Fig 10. Typical application circuit
50 Ω
microstrip C1 C2
C3
L1
VS
50 Ω
microstrip
C4 C5(1)
R1(2)
mgx419
1VD
2
3

BGA6489_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 June 2009 8 of 13
NXP Semiconductors BGA6489
MMIC wideband medium power amplifier
[1] Optional.
8.1 Scattering parameters
Table 9. List of components
See Figure 10 for circuit.
Component Description Package Value at operating frequency
500 MHz 800 MHz 1950 MHz 2400 MHz 3500 MHz
C1, C2 multilayer ceramic chip capacitor 0603 220 pF 100 pF 68 pF 56 pF 39 pF
C3 multilayer ceramic chip capacitor 0603 100 pF 68 pF 22 pF 22 pF 15 pF
C4 multilayer ceramic chip capacitor 0603 1 nF 1 nF 1 nF 1 nF 1 nF
C5[1] electrolytic or tantalum capacitor 0603 1 µF1µF1µF1µF1µF
L1 SMD inductor 0603 68 nH 33 nH 22 nH 18 nH 15 nH
R1 SMD resistor 0.5 W; VS= 8 V - 39 Ω39 Ω39 Ω39 Ω39 Ω
Table 10. Scattering parameters
I
S
= 78 mA; V
S
=8V;P
D
= − 30 dBm; Z
O
=50 Ω ; T
amb
=25 ° C
f (MHz) s11 s21 s12 s22 K
Magnitude
(ratio) Angle (degree) Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree)
200 0.06 28.11 12.79 164.42 0.06 −0.30 0.12 −22.91 1.1
300 0.09 27.41 12.59 156.85 0.06 −0.39 0.13 −35.38 1.1
400 0.11 21.64 12.31 149.28 0.06 −0.35 0.14 −46.54 1.1
500 0.12 15.28 11.97 141.88 0.06 −0.32 0.14 −57.20 1.1
600 0.14 8.01 11.57 134.79 0.06 0.04 0.15 −61.41 1.1
700 0.16 0.34 11.18 127.97 0.06 0.63 0.16 −76.76 1.1
800 0.17 −7.27 10.75 121.56 0.05 1.57 0.16 −85.75 1.2
900 0.18 −14.78 10.24 115.06 0.05 1.85 0.17 −94.28 1.2
1000 0.19 −22.18 9.80 109.18 0.05 3.16 0.17 −102.4 1.2
1100 0.20 −29.33 9.40 103.40 0.05 4.29 0.17 −110.3 1.2
1200 0.21 −36.41 8.96 98.12 0.05 5.64 0.17 −118.5 1.2
1300 0.21 −42.47 8.53 92.76 0.05 7.03 0.17 −126.7 1.2
1400 0.22 −49.06 8.16 87.50 0.06 7.74 0.17 −134.8 1.2
1500 0.22 −55.46 7.85 82.76 0.06 9.08 0.17 −143.5 1.3
1600 0.22 −61.20 7.51 78.52 0.06 10.76 0.16 −152.7 1.3
1700 0.22 −67.02 7.16 74.16 0.06 11.89 0.16 −161.8 1.3
1800 0.21 −73.40 6.90 69.37 0.06 12.34 0.16 −171.9 1.3
1900 0.21 −78.99 6.69 65.14 0.06 13.16 0.16 177.4 1.3
2000 0.20 −84.54 6.42 61.15 0.06 14.33 0.16 166.81 1.3
2100 0.19 −91.32 6.16 56.80 0.07 14.84 0.17 156.07 1.3
2200 0.18 −97.58 5.99 52.55 0.07 15.05 0.17 145.29 1.3
2300 0.17 −103.60 5.83 49.08 0.07 15.72 0.19 135.65 1.3
2400 0.16 −111.90 5.58 45.43 0.07 15.96 0.20 126.23 1.3
2500 0.14 −120.80 5.39 40.67 0.08 15.27 0.22 117.16 1.3
2600 0.13 −129.80 5.30 36.66 0.08 14.68 0.24 110.35 1.3

BGA6489_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 June 2009 9 of 13
NXP Semiconductors BGA6489
MMIC wideband medium power amplifier
2700 0.13 −143.80 5.18 33.88 0.08 15.64 0.28 104.05 1.3
2800 0.12 −154.47 5.08 30.28 0.08 15.56 0.31 97.10 1.3
2900 0.11 −164.40 4.71 22.43 0.09 11.60 0.28 91.75 1.3
3000 0.11 178.65 4.66 18.90 0.09 11.05 0.31 84.80 1.3
3100 0.12 160.01 4.45 18.63 0.10 10.63 0.33 80.37 1.3
Table 10. Scattering parameters
I
S
= 78 mA; V
S
=8V;P
D
= − 30 dBm; Z
O
=50 Ω ; T
amb
=25 ° C
f (MHz) s11 s21 s12 s22 K
Magnitude
(ratio) Angle (degree) Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree)

BGA6489_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 June 2009 10 of 13
NXP Semiconductors BGA6489
MMIC wideband medium power amplifier
9. Package outline
Fig 11. Package outline SOT89 (SC-62)
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
DIMENSIONS (mm are the original dimensions)
SOT89 TO-243 SC-62 06-03-16
06-08-29
wM
e1
e
EHE
B
B
0 2 4 mm
scale
bp3
bp2
bp1
c
D
Lp
A
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89
123
UNIT A
mm 1.6
1.4 0.48 0.35
c
0.44
0.23
D
4.6
4.4
E
2.6
2.4
HELp
4.25
3.75
e
3.0
w
0.13
e1
1.5 1.2
0.8
bp2 bp1
0.53
0.40
bp3
1.8
1.4