NXP Semiconductors TDA1519C User manual

DATA SHEET
Product specification
Supersedes data of 2001 Aug 24 2004 Jan 28
INTEGRATED CIRCUITS
TDA1519C
22 W BTL or 2 11 W
stereo power amplifier

2004 Jan 28 2
NXP Semiconductors Product specification
22 W BTL or 2 11 W
stereo power amplifier TDA1519C
FEATURES
Requires very few external components for Bridge-Tied
Load (BTL) operation
Stereo or BTL application
High output power
Low offset voltage at output (important for BTL
applications)
Fixed gain
Good ripple rejection
Mute/standby switch
Load dump protection
AC and DC short-circuit safe to ground and VP
Thermally protected
Reverse polarity safe
Capability to handle high energy on outputs (VP=0V)
No switch-on/switch-off plops
Protected against electrostatic discharge
Low thermal resistance
Identical inputs (inverting and non-inverting)
Pin compatible with TDA1519B (TDA1519C and
TDA1519CSP).
GENERAL DESCRIPTION
The TDA1519C is an integrated class-B dual output
amplifier in a 9-lead plastic single in-line power package or
20-lead heatsink small outline package.
For the TDA1519CTH (SOT418-3), the heatsink is
positionedon top of the package, whichallows an external
heatsink to be mounted on top. The heatsink of the
TDA1519CTD (SOT397-1) is facing the PCB, allowing the
heatsink to be soldered onto the copper area of the PCB.
ORDERING INFORMATION
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
TDA1519C SIL9P plastic single in-line power package; 9 leads SOT131-2
TDA1519CSP SMS9P plastic surface mounted single in-line power package; 9 leads SOT354-1
TDA1519CTD HSOP20 plastic, heatsink small outline package; 20 leads SOT397-1
TDA1519CTH HSOP20 plastic, heatsink small outline package; 20 leads; low stand-off height SOT418-3

2004 Jan 28 3
NXP Semiconductors Product specification
22 W BTL or 2 11 W
stereo power amplifier TDA1519C
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supply
VPsupply voltage operating 6.0 14.4 17.5 V
non-operating 30 V
load dump protected 45 V
IORM repetitive peak output current 4A
Iq(tot) total quiescent current 40 80 mA
Istb standby current 0.1 100 A
Isw(on) switch-on current 40 A
Inputs
Ziinput impedance BTL 25 k
stereo 50 k
Stereo application
Pooutput power THD = 10 %
RL=46W
RL=211 W
cs channel separation 40 dB
Vn(o)(rms) noise output voltage (RMS value) 150 V
BTL application
Pooutput power THD = 10 %; RL=422 W
SVRR supply voltage ripple rejection RS=0
fi=100Hz 34 dB
fi=1to10kHz 48 dB
VOODC output offset voltage 250 mV
Tjjunction temperature 150 C

2004 Jan 28 4
NXP Semiconductors Product specification
22 W BTL or 2 11 W
stereo power amplifier TDA1519C
BLOCK DIAGRAM
mgl491
60
kW
input
reference
voltage power
ground
(substrate)
+
+
-
5
signal
ground
2 7
9
6
183
W
18.1 kW
3
TDA1519C
TDA1519CSP
15 kW
15 kW
VA
VA
C
m
mute switch
power stage
60
kW
standby
reference
voltage
mute
reference
voltage
1
NINV
RR
INV
OUT2
M/SS
OUT1
GND1 GND2V
P
4
8
183
W
18.1 kW
VA
C
m
mute switch
power stage
+
-
mute
switch
standby
switch
× 1
V
P
Fig.1 Block diagram.
The pin numbers refer to the TDA1519C and TDA1519CSP only, for TDA1519CTD and TDA1519CTH see Figs 3 and 4.

2004 Jan 28 5
NXP Semiconductors Product specification
22 W BTL or 2 11 W
stereo power amplifier TDA1519C
PINNING
SYMBOL PIN DESCRIPTION
TDA1519C;
TDA1519CSP TDA1519CTD TDA1519CTH
NINV 1 19 19 non-inverting input
GND1 2 20 20 ground 1 (signal)
RR 3 1 1 supply voltage ripple rejection
OUT1 4 3 3 output 1
GND2 5 5 5 ground 2 (substrate)
OUT2 6 8 8 output 2
VP7 10 10 positive supply voltage
M/SS 8 11 11 mute/standby switch input
INV 9 12 12 inverting input
n.c. 2, 4, 6, 7, 9 and 13 to 18 2, 4, 6, 7, 9 and 13 to 18 not connected
NINV
GND1
RR
OUT1
GND2
OUT2
V
P
M/SS
INV
1
2
3
4
5
6
7
8
9
TDA1519C
TDA1519CSP
mgr561
Fig.2 Pin configuration
TDA1519C and
TDA1519CSP.
RR
n.c.
OUT1
n.c.
GND2
n.c.
n.c.
OUT2
n.c.
VP
GND1
NINV
n.c.
n.c.
n.c.
n.c.
n.c.
n.c.
INV
M/SS
1
2
3
4
5
6
7
8
9
10 11
12
20
19
18
17
16
15
14
13
TDA1519CTD
mgl937
Fig.3 Pin configuration
TDA1519CTD.
TDA1519CTH
GND1 RR
NINV n.c.
n.c. OUT1
n.c. n.c.
n.c. GND2
n.c. n.c.
n.c. n.c.
n.c. OUT2
INV n.c.
M/SS V
P
001aaa348
20
19
18
17
16
15
14
13
12
11
9
10
7
8
5
6
3
4
1
2
Fig.4 Pin configuration
TDA1519CTH.

2004 Jan 28 6
NXP Semiconductors Product specification
22 W BTL or 2 11 W
stereo power amplifier TDA1519C
FUNCTIONAL DESCRIPTION
The TDA1519C contains two identical amplifiers with
differential input stages. The gain of each amplifier is fixed
at 40 dB. A special feature of this device is the
mute/standby switch which has the following features:
Low standby current (<100 A)
Low mute/standby switching current (allows for low-cost
supply switch)
Mute condition.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VPsupply voltage operating 17.5 V
non-operating 30 V
load dump protected;
during 50 ms; tr2.5 ms 45 V
Vsc AC and DC short-circuit-safe voltage 17.5 V
Vrp reverse polarity voltage 6V
Eoenergy handling capability at outputs VP=0V 200 mJ
IOSM non-repetitive peak output current 6A
IORM repetitive peak output current 4A
Ptot total power dissipation see Fig.5 25 W
Tjjunction temperature 150 C
Tstg storage temperature 55 +150 C
-25 0 50 150
30
10
0
20
mgl492
100
Ptot
(W)
Tamb (°C)
(1)
(2)
(3)
Fig.5 Power derating curve for TDA1519C.
(1) Infinite heatsink.
(2) Rth(c-a) =5K/W.
(3) Rth(c-a) =13K/W.

2004 Jan 28 7
NXP Semiconductors Product specification
22 W BTL or 2 11 W
stereo power amplifier TDA1519C
THERMAL CHARACTERISTICS
DC CHARACTERISTICS
VP=14.4V;T
amb =25C; measured in circuit of Fig.6; unless otherwise specified.
Notes
1. The circuit is DC adjusted at VP= 6 to 17.5 V and AC operating at VP= 8.5 to 17.5 V.
2. At VP= 17.5 to 30 V, the DC output voltage is 0.5VP.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient;
TDA1519C, TDA1519CTH and TDA1519CTD in free air 40 K/W
Rth(j-c) thermal resistance from junction to case;
TDA1519C, TDA1519CTH and TDA1519CTD 3K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supply
VPsupply voltage note 1 6.0 14.4 17.5 V
Iq(tot) total quiescent current 40 80 mA
VODC output voltage note 2 6.95 V
VOODC output offset voltage 250 mV
Mute/standby switch
Vsw(on) switch-on voltage level 8.5 V
Vmute mute voltage level 3.3 6.4 V
Vstb standby voltage level 0 2V
Mute/standby condition
Vooutput voltage mute mode; Vi= 1 V (maximum);
fi=20Hzto15kHz 20 mV
VOODC output offset voltage mute mode 250 mV
Istb standby current standby mode 100 A
Isw(on) switch-on current 12 40 A

2004 Jan 28 8
NXP Semiconductors Product specification
22 W BTL or 2 11 W
stereo power amplifier TDA1519C
AC CHARACTERISTICS
VP=14.4V;R
L=4; f = 1 kHz; Tamb =25C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Stereo application (see Fig.6)
Pooutput power note 1
THD = 0.5 % 4 5 W
THD = 10 % 5.5 6.0 W
RL=2; note 1
THD = 0.5 % 7.5 8.5 W
THD = 10 % 10 11 W
THD total harmonic distortion Po=1W 0.1 %
fro(l) low frequency roll-off 3dB;note2 45 Hz
fro(h) high frequency roll-off 1dB 20 kHz
Gv(cl) closed-loop voltage gain 39 40 41 dB
SVRR supply voltage ripple rejection on; notes 3 and 4 40 dB
on; notes 3 and 5 45 dB
mute; notes 3 and 6 45 dB
standby; notes 3
and 6 80 dB
Ziinput impedance 50 60 75 k
Vn(o)(rms) noise output voltage (RMS value) note 7
on; RS=0150 V
on; RS=10k 250 500 V
mute; note 8 120 V
cs channel separation RS=10k40 dB
Gv(ub)channel unbalance 0.1 1 dB
BTL application (see Fig.7)
Pooutput power note 1
THD = 0.5 % 15 17 W
THD = 10 % 20 22 W
VP= 13.2 V; note 1
THD = 0.5 % 13 W
THD = 10 % 17.5 W
THD total harmonic distortion Po=1W 0.1 %
Bppower bandwidth THD = 0.5 %;
Po=1 dB; with
respect to 15 W
35 to 15000 Hz
fro(l) low frequency roll-off 1dB;note2 45 Hz
fro(h) high frequency roll-off 1dB 20 kHz
Gv(cl) closed-loop voltage gain 45 46 47 dB

2004 Jan 28 9
NXP Semiconductors Product specification
22 W BTL or 2 11 W
stereo power amplifier TDA1519C
Notes
1. Output power is measured directly at the output pins of the device.
2. Frequency response externally fixed.
3. Ripple rejection measured at the output with a source impedance of 0 (maximum ripple amplitude of 2 V).
4. Frequency f = 100 Hz.
5. Frequency between 1 and 10 kHz.
6. Frequency between 100 Hz and 10 kHz.
7. Noise voltage measured in a bandwidth of 20 Hz to 20 kHz.
8. Noise output voltage independent of RS(Vi=0V).
SVRR supply voltage ripple rejection on; notes 3 and 4 34 dB
on; notes 3 and 5 48 dB
mute; notes 3 and 6 48 dB
standby;
notes 3 and 6 80 dB
Ziinput impedance 25 30 38 k
Vn(o)(rms) noise output voltage (RMS value) note 7
on; RS=0200 V
on; RS=10k 350 700 V
mute; note 8 180 V
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

2004 Jan 28 10
NXP Semiconductors Product specification
22 W BTL or 2 11 W
stereo power amplifier TDA1519C
APPLICATION INFORMATION
2200
µF
1000
µF
100 µF 100
nF
220 nF 60 kW
input
reference
voltage
40 dB
+
-
1220 nF
60 kW
40 dB
-
+
9
546
inverting inputnon-inverting input
internal
1/2 VP
VP
power
ground
2
signal
ground
TDA1519C
38
7
standby switch
mgl493
Fig.6 Stereo application diagram (TDA1519C).
2200
µF
100
nF
220 nF 60 kW
RL= 4 W
input
reference
voltage
40 dB
+
-
160 kW
40 dB
-
+
9
546
non-inverting input
to pin 9
internal
1/2 V
P
V
P
power
ground
2
signal
ground
TDA1519C
38
7
standby switch
mgl494
to pin 1
Fig.7 BTL application diagram (TDA1519C).