Philips TDA6111Q User manual

DATA SHEET
Preliminary specification
Supersedes data of February 1992
File under Integrated Circuits, IC02
1995 Feb 07
INTEGRATED CIRCUITS
Philips Semiconductors
TDA6111Q
Video output amplifier

1995 Feb 07 2
Philips Semiconductors Preliminary specification
Video output amplifier TDA6111Q
FEATURES
•High bandwidth and high slew rate
•Black-current measurement output for Automatic
Black-current Stabilization (ABS)
•Two cathode outputs; one for DC currents, and one for
transient currents
•A feedback output separated from the cathode outputs
•Internal protection against positive appearing
Cathode-Ray Tube (CRT) flashover discharges
•ESD protection
•Simple application with a variety of colour decoders
•Differential input with a designed maximum common
mode input capacitance of 3 pF, a maximum differential
modeinputcapacitanceof0.5 pFandadifferentialinput
voltage temperature drift of 50 µV/K
•Defined switch-off behaviour.
GENERAL DESCRIPTION
The TDA6111Q is a video output amplifier with 16 MHz
bandwidth. The device is contained in a single in-line 9-pin
medium power (DBS9MPF) package, using high-voltage
DMOS technology, intended to drive the cathode of a
colour CRT.
QUICK REFERENCE DATA
ORDERING INFORMATION
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VDDH high level supply voltage 0 −250 V
VDDL low level supply voltage 0 −14 V
IDDH quiescent high voltage supply current Voc = 0.5VDDH 7.0 9.0 11.0 mA
IDDL quiescent low voltage supply current Voc = 0.5VDDH 5.0 6.8 8.0 mA
VIinput voltage 0 −VDDL V
Voc, Vfb output voltage VDDL −VDDH V
Tstg storage temperature −55 −+150 °C
Tamb operating ambient temperature −20 −+65 °C
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
TDA6111Q DBS9MPF plastic DIL-bent-SIL medium power package with fin; 9 leads SOT111-1

1995 Feb 07 3
Philips Semiconductors Preliminary specification
Video output amplifier TDA6111Q
BLOCK DIAGRAM
Fig.1 Block diagram.
handbook, full pagewidth
DIFFERENTIAL
STAGE
MIRROR
MIRROR
CURRENT
SOURCE MIRROR
MIRROR
TDA6111Q
7 V
supply voltage
input HIGH feedback output
6
Vbias
FOLLOWERS
Cpar
9
non-inverting
input
inverting
input 3
1
42
ground
(substrate) supply voltage input LOW
7
8
5
cathode
transient
output
cathode
DC output
black current
measurement
output
MGA058

1995 Feb 07 4
Philips Semiconductors Preliminary specification
Video output amplifier TDA6111Q
PINNING
SYMBOL PIN DESCRIPTION
Vip 1 non-inverting voltage input
VDDL 2 supply voltage LOW
Vin 3 inverting voltage input
GND 4 ground, substrate
Iom 5 black current measurement
output
VDDH 6 supply voltage HIGH
Vcn 7 cathode transient voltage output
Voc 8 cathode DC voltage output
Vfb 9 feedback voltage output
Fig.2 Pin configuration.
a
ndbook, halfpage
MGA057
1
2
3
4
5
6
7
8
9
DDL
V
GND
TDA6111Q
ip
V
in
V
om
I
oc
V
cn
V
fb
V
DDH
V

1995 Feb 07 5
Philips Semiconductors Preliminary specification
Video output amplifier TDA6111Q
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134). Voltages measured with respect to GND (pin 4);
currents as specified in Fig.1; unless otherwise specified.
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices (see
“Handling MOS Devices” ).
QUALITY SPECIFICATION
Quality specification
“SNW-FQ-611 part E” is applicable, except for ESD Human body model see Chapter “Limiting
values”, and can be found in the “Quality reference handbook” (ordering number 9398 510 63011).
THERMAL CHARACTERISTICS
Note
1. External heatsink is required.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDDH high level supply voltage 0 250 V
VDDL low level supply voltage 0 14 V
VIinput voltage 0 VDDL V
VIdm differential mode input voltage −6+6V
V
om measurement output voltage 0 VDDL
Voc cathode output voltage VDDL VDDH V
Vfb feedback output voltage VDDL VDDH V
Iin,Iip input current 0 1 mA
IocsmL low non-repetitive peak cathode
output current flashover discharge = 100 µC05A
I
ocsmH high non-repetitive peak cathode
output current flashover discharge = 100 nC 0 10 A
Ptot total power dissipation 0 4 W
Tstg storage temperature −55 +150 °C
Tjjunction temperature −20 +150 °C
Ves electrostatic handling
human body model (HBM) −> 1500 V
machine model (MM) −> 400 V
SYMBOL PARAMETER VALUE UNIT
Rth j-c thermal resistance from junction to case (note 1) 12 K/W

1995 Feb 07 6
Philips Semiconductors Preliminary specification
Video output amplifier TDA6111Q
CHARACTERISTICS
Operating range: Tamb =−20 to 65 °C; VDDH = 180 to 210 V; VDDL = 10.8 to 13.2 V; Vip = 2.6 to 5 V;
Vom =1.4VtoV
DDL.
Test conditions (unless otherwise specified): Tamb =25°C; VDDH = 200 V; VDDL = 12 V; Vip =5V;V
om =6V;C L=10pF
(CLconsists of parasitic and cathode capacitance); Rth-heatsink = 10 K/W; measured in test circuit Fig.3.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IDDH quiescent HIGH voltage supply current Voc = 0.5VDDH 7.0 9.0 11.0 mA
IDDL quiescent LOW voltage supply current Voc = 0.5VDDH 5.0 6.8 8.0 mA
Ibias input bias current Voc = 0.5VDDH 0−40 µA
Ioffset input offset current Voc = 0.5VDDH −6−+6 µA
Iom(offset) offset current of measurement output Ioc =0µA;
−1.0V<V
1−3< 1.0 V;
1.4 V < Vom <V
DDL
−10 0 +10 µA
linearity of current transfer −10 µA<I
oc < 3 mA;
−1.0V<V
1−3< 1.0 V;
1.4 V < Vom <V
DDL
0.9 1.0 1.1
Voffset input offset voltage Voc = 0.5VDDH −50 −+50 mV
Voc(min) minimum output voltage V1−3=−1V −−20 V
Voc(max) maximum output voltage V1−3=−1V V
DDH −12 −−V
GB gain-bandwidth product of open-loop
gain: Vfb /V
i, dm
f = 500 kHz; VocDC = 100 V −1.6 −GHz
BSsmall signal bandwidth VocAC = 60 V (p-p);
VocDC = 100 V 13 16 −MHz
BLlarge signal bandwidth VocAC = 100 V (p-p);
VocDC = 100 V 10 13 −MHz
tpd cathode output propagation delay time
50% input to 50% output VocAC = 100 V (p-p); VocDC = 100 V square
wave; f < 1 MHz;
tr=t
f=22ns;
see Figs 4 and 5
17 23 29 ns
trcathode output rise time 10% output to
90% output Voc = 50 to 150 V square wave;f < 1 MHz;tf= 22 ns;
see Fig.4
23 30 36 ns
tfcathode output fall time 90% output to
10% output Voc = 150 to 50 V square wave;f < 1 MHz;tr= 22 ns;
see Fig.5
23 30 36 ns
tssettling time 50% input to
(99% < output < 101%) VocAC = 100 V (p-p); VocDC = 100 V square
wave; f < 1 MHz;
tr=t
f=22ns;
see Figs 4 and 5
−−350 ns
SR slew rate between 50 V to 150 V V1−3= 2 V (p-p) square
wave; f < 1 MHz;
tr=t
f=22ns
−3000 −V/µs
∆Iom
∆Ioc
------------

1995 Feb 07 7
Philips Semiconductors Preliminary specification
Video output amplifier TDA6111Q
Notes
1. If the difference between VDDL and Vip is less than 7 V, overshoot cannot be specified.
2. SVRR: The ratio of the change in supply voltage to the change in input voltage when there is no change in output
voltage.
Ovcathode output voltage overshoot VocAC = 100 V (p-p);
VocDC = 100 V square
wave; f < 1 MHz;
tr=t
f=22ns;
see Figs 4 and 5; note 1
−9−%
SVRRH high supply voltage rejection ratio f < 50 kHz; note 2 −85 −dB
SVRRL low supply voltage rejection ratio f < 50 kHz; note 2 −70 −dB
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Cathode output
The cathode output is protected against peak currents
(caused by positive voltage peaks during high-resistance
flash) of 5 A maximum with a charge content of 100 µC.
The cathode is also protected against peak currents
(caused by positive voltage peaks during low-resistance
flash) of 10 A maximum with a charge content of 100 nC.
Flashover protection
The TDA6111Q incorporates protection diodes against
CRT flashover discharges that clamp the cathode output
pinto theVDDH pin.The DCsupplyvoltageat theVDDH pin
has to be within the operating range of 180 to 210 V to
ensure that the Absolute Maximum Rating for VDDH of
250 V will not be exceeded during flashover. To limit the
diode current, an external 680 Ωcarbon high-voltage
resistorinserieswiththecathodeoutputanda2 kVspark
gap are needed (for this resistor-value, the CRT has to be
connected to the main PCB). This addition produces an
increase in the rise and fall times of approximately 5 ns
and a decrease in the overshoot of approximately 4%.
VDDH to GND must be decoupled:
1. With a capacitor >20 nF with good HF behaviour
(e.g. foil). This capacitance must be placed as close
as possible to pins 6 and 4, but definitely within 5 mm.
2. Withacapacitor>10 µFon the picture tube base print
(common for three output stages).
VDDL to GND must be decoupled:
1. With a capacitor >20 nF with good HF behaviour
(e.g. ceramic). This capacitance must be placed as
close as possible to pins 2 and 4, but definitely within
10 mm.
Switch-off behaviour
The switch-off behaviour of the TDA6111Q is defined:
whenthebiascurrentbecomeszero,atVDDL (pin 2)lower
than approximately 5 V, all the output pins
(pins 7, 8 and 9) will be high.

1995 Feb 07 8
Philips Semiconductors Preliminary specification
Video output amplifier TDA6111Q
Cpar = 150 fF.
Fig.3 Test circuit with feedback factor 1⁄83.
handbook, full pagewidth
C3
3.9 pF
R9
820 Ω
C2
22 µF
C1
22 nF C5
22 nF C6 100 nF
R10
68.1 kΩ
12 V 200 V
3926
1458
7
TDA6111Q
R1
50 Ω
C10
100 nF C9
136 pF
R3
20 MΩ
C7
3.2 pF
C8
6.8 pF
R2
1 MΩ
1.4 mA
5 V om
V
6 V probe
Vi
n
C
560 pF
MGA059 - 1
Cpar
A
C4
10 µF
C7 10 µF

1995 Feb 07 9
Philips Semiconductors Preliminary specification
Video output amplifier TDA6111Q
Fig.4 Output voltage (pin 8) rising edge as a function of the AC input signal.
150
140
100
60
50
151
149
s
t
overshoot (in %)
t
t
0
x
x
tr
pd
t
Voc
Vi
MGA974

1995 Feb 07 10
Philips Semiconductors Preliminary specification
Video output amplifier TDA6111Q
Fig.5 Output voltage (pins 8) falling edge as a function of the AC input signal.
150
140
100
60
50
51
49
s
t
overshoot (in %)
t
t
0
x
x
tf
pd
t
Voc
Vi
MGA975