Midrange Operation
The Cr and C, reactances
are considerably smaller
than VRr at frequencies above midrange, effec-
tively shorting VRr. At frequencies below mid-
range, C. reactance becomes large and in effect,
opens the circuit. Consequently, the circuit be-
comes equivalent to that shown in Fig. 3 with
respectto the midrange. In this figure, the circuits
parameters
are not changedby any changein pos!
tion of the VR, and VR. sliders.
The NFB amount
is therefore fixed and the circuit gain is also fixed
without regard
to VRr and VR, slider positions.
Fig.
3. Midrange
operation
ofNFB
type
tonecontrol
circuit
Low Frequency Operation
The reactance of C, and C, increases
at low fre-
quency to form a circuit asshown in Fig. 4. This
ipactance increases
in proportion to the frequency
declines. Also, the NFB amount varies grea y
according to VR1 slider position. The circuit sain
at low frequenciescantherefore bevaried by Vh1.
Capacitance of C1 and C, is changed by BASS
TURNOVER switch (by adding acapacitor to each
in parallel). This a.llows
selection of the frequencv
at which VR, begins
to take effect.
that shown in Fig. 5. C. reactance decreasesin
the same de$ee that the frequency increases
and
the NFB amount is now mainly controlled by the
VR, slider position. Consequently,the gain at high
frequencies
canbe
variedby VR:.
C. capacitance is changed by TREBLE TURN-
OVER switch (by adding another capacitor in
series) to provide selection of the frequency at
which VR: begins
to take effect.
Fiq.
5. High
frequency
operation
of NFB
type
tone
control
circuit
5.3 POWER
AMPLIFIER
The circuit diagram for the power amplifier section
isshown
in Fig.6.
The input stage(Q1) constitutes a differential am-
plifier, employing a dual transistor (a 2-in-1 tran-
sistor "package" possessing
the functions of 2
separatetransistors). The second stage(er, e.) is
also a differential amplifier, but with the inclusion
of a current mirror (D1, Qr). Sincethe ea base-
emitter junction conespondsto adiode, the poten-
tial on the anode of D, and the emitter of eo will
be the same. Consequently, the potential drops
across R, and R, will a.lsobe equal. So if the
resistance
of these 2 resistors
is the same,
the same
current will flow through both sections.
And if the
hpg of the transistor is sufficiently large, the base
current can be neglected.That is, the e. collector
current and the Qa collector current will be the
same. Since Q, and Q3 operate out of phasewith
each other, Q: and Qo will operate asa push-pull
amplifier. The bias voltage for the power stage
is
supplied by the potential difference produced
across VR1- D3
- D, , where VR1 is the variable
resistor usedto setthis potential difference. D, is a
varistor which compensates
for thermal differences.
The power stage (Qs- Q16) includes a 2-stage
Darlington connection,with the fina.l
stage
(e7-
Qto) forming two complementary symmetrical
parallel circuits. The output mid-point is main-
tained at 0V by a balanced plus and minus power
supply and a 700% DC NFB circuit.
f)
I
'l
l
fr
vn.
Fig.
4. Low
frequency
operation
ofNFB
type
tone
control
circuit
High Frequency Operation
The considerably smaller reactanceof C, and C" at
high frequency
in comparison
with VR, effectivelv
shortsVR, to from an equivalent
circuit such as