Texas Instruments TIDM-2014 Guide

Design Guide:
Automotive, High-Power, High-Performance SiC Traction
Inverter Reference Design
Description
TIDM-2014 is a 800-V, 300 kW SiC-based traction
inverter system reference design developed by
Texas Instruments and Wolfspeed which provides
a foundation for design engineers to create high-
performance, high-efficiency traction inverter systems
and get to market faster. The design features
high-performance isolated gate driver with real-time
variable gate drive strength, isolated bias supply with
integrated transformer along with TI's high real-time
performance, MCUs that can control traction motor
even at speeds greater than 20,000 RPM while
supporting functional safety requirements.
Resources
TIDM-02014 Design Folder
UCC5880-Q1, AM2634-Q1 Product Folder
TMS320F280039C-Q1, UCC14240-Q1 Product Folder
UCC12051-Q1, AMC3330-Q1 Product Folder
TCAN1462-Q1, ISO1042-Q1,
ALM2403-Q1
Product Folder
Ask our TI E2E™ support experts
Features
• Real-time variable gate drive strength features
enable improvement in system efficiency by
minimizing the SiC switching power losses and
accurate bias supply minimizes conductive losses .
• Isolated gate drivers and bias supply module
reduce PCB area by 30%.
• High performance MCUs enable industry’s fastest
motor control loop (<2 µs), which helps to minimize
torque ripple and provides smooth speed and
torque current profiles to the traction motor.
• UCC5880-Q1 and AM2634-Q1 are Functional
Safety-Compliant targeted devices.
• Enhance system reliability with reinforced rated
capacitive isolation technology and early failure
detection.
Applications
•HEV/EV Traction Inverters
Resolver AFE
Motor Phases
Isolated
Gate Driver
Safety MCU
M
DC Bus Sensing
Bias Supply High Side
R
Phase Current Sensing
Temp Sensing
SiC
Power Modules
Bias Supply Low Side
PMIC
Phase Node sensing
CAN
SPI
Discharge
DC Link Cap
Excitation
PWM
Sensing and gate driver
diagnostics
Excitation & Feedback
ASC
OUT1
NTC
Temp
SPI / Fault
Resolver
/ Hall
WD
Supply
Diagnostics /
Monitoring
Supply
Diagnostics /
Monitoring
Sensing
A to D
Isolated Amplifier
HSM
PWM
Wired
Interface
Batt Volt
Monitoring
Hall
800 V Bus
12 V Battery Vin
Sensing signal
SPI SPI
BIST
Adj.
Gate
drive
A to D
DESAT
Signal Conditioning
ADC
ASC
Isolated Comparator
VCU
VCU
VCU
DC Bus
OUT2
CLB
CMPSS
ADC
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1 System Description
The traction inverter system is a core sub-system of an electric vehicle. The system not only contributes directly
to the driver experience in terms of acceleration and speed, but also impacts the useful range of an electric
vehicle. The TIDM-02014 reference design is a 800 V, 300 kW SiC based inverter reference design from TI and
Wolfspeed that attempts to provide a starting point for designers and engineers to achieve a high-performance,
high-efficiency traction inverter system.
This design demonstrates the traction inverter system technology that improves system efficiency by reducing
the overshoot in available voltages with a high-performance isolated gate driver. The real-time variable drive
strength of the gate driver enables inverter efficiency improvement. The isolated gate driver coupled with TI’s
isolated bias supply design significantly reduces the PCB size providing more than two times smaller PCB area,
less than 4 mm height and eliminating 30+ discrete components improving system power density. In addition,
TI’s high-control performance MCUs featuring tightly-integrated and remarkable real-time peripherals enable
effective traction motor control even at speeds greater than 20,000 RPM. A fast current loop implementation
helps minimize motor torque ripple and provides smooth speed-torque profiles. The mechanical and thermal
design of the system is provided by Wolfspeed.
WARNING
TI intends this reference design to be operated in a lab environment only and does not consider the
reference design to be a finished product for general consumer use.
TI intends this reference design to be used only by qualified engineers and technicians familiar with
risks associated with handling high-voltage electrical and mechanical components, systems, and
subsystems.
High voltage! There are accessible high voltages present on the board. The board operates at
voltages and currents that can cause shock, fire, or injury if not properly handled or applied. Use the
equipment with necessary caution and appropriate safeguards to avoid injuring yourself or damaging
property.
CAUTION
Do not leave the design powered when unattended.
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1.1 Key System Specifications
The key system specifications are summarized in Table 1-1.
Table 1-1. Key System Specifications
Parameter Specifications (units) Notes
Pout 300 kW Rated output power
VDSmax 1200 V Maximum Dain-Source Voltage
VDC 800 V DC bus voltage recommended
IDC 300 A DC Bus current
fswmax 60 kHz Based on the gate driver bias
power
IL360 A AC output RMS current
LPL 5.3 nH Parasitic Inductance including DC
link capacitors and Bus bar
CDC 300 uF DC link capacitor
LDC 3.5 nH DC Bus capacitor ESL
Power Density 32 kW/L
Dimensions 28 cm x 29 cm x 11.5 cm
Weight 6.2 kg
Volume 9.3 L
Area 812 cm2
P 5 bar Coolant Operating Pressure
∆P 200 mbar Pressure Drop
• For information on the isolated gate driver, please refer to UCC5880-Q1 data sheet.
• For information on the Microcontroller, please refer to AM2634-Q1 and TMSF280039C-Q1 data sheet.
• For information on the bias supply, please refer to UCC14240-Q1 data sheet.
• For information on the integrated modules, please reference the CAB450M12XM3 data sheet.
• For higher ambient temperatures, the DC-Link voltage and DC-Link current must be de-rated according to
the included DC-Link capacitor ratings. Please refer to the 1100 V / 100 μF CX100µ1100d51KF6 data sheet
provided by FTCAP GmbH for more detailed information.
• The included cold plate is a Wieland MicroCool CP3012-XP. To calculate the thermal resistance (°C/W) and
pressure drop (bar) versus flow rate (liters/min.), please refer to the CP3012-XP data sheet provided by
Wieland MicroCool Inc. for more detailed information.
• The included current sensor board uses the LEM LF 510-S. Please refer to the LF 510-S data sheet provided
by LEM USA Inc. for more detailed information.
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2 System Overview
2.1 Block Diagram
Figure 2-1 shows the block diagram of this reference design with key TI components highlighted.
Resolver AFE
Motor Phases
Isolated
Gate Driver
Safety MCU
M
DC Bus Sensing
Bias Supply High Side
R
Phase Current Sensing
Temp Sensing
SiC
Power Modules
Bias Supply Low Side
PMIC
Phase Node sensing
CAN
SPI
Discharge
DC Link Cap
Excitation
PWM
Sensing and gate driver
diagnostics
Excitation & Feedback
ASC
OUT1
NTC
Temp
SPI / Fault
Resolver
/ Hall
WD
Supply
Diagnostics /
Monitoring
Supply
Diagnostics /
Monitoring
Sensing
A to D
Isolated Amplifier
HSM
PWM
Wired
Interface
Batt Volt
Monitoring
Hall
800 V Bus
12 V Battery Vin
Sensing signal
SPI SPI
BIST
Adj.
Gate
drive
A to D
DESAT
Signal Conditioning
ADC
ASC
Isolated Comparator
VCU
VCU
VCU
DC Bus
OUT2
CLB
CMPSS
ADC
Figure 2-1. TIDM-02014 SiC Inverter System Block Diagram
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2.2 Design Considerations
The primary goal of a traction system is to efficiently drive the traction motor, typically an induction or an interior
permanent magnet synchronous motor (IPMSM), with a high control bandwidth. For this, TIDM-02014 features
the C2000 real-time control MCU to implementing a field oriented control (FOC) scheme to drive the motor.
The design also supports TI's Sitara™ AM263x MCU based control implementation to achieve high real-time
performance while supporting functional-safety requirements.
To achieve high-efficiency operation of the SiC inverter, the UCC5880-Q1 functional-safety compliant isolated
gate driver design is leveraged. In addition to advanced configuration and protection features, the real-time
variable gate driver strength feature of the UCC5880-Q1 enables efficiency optimization. The gate drive bias
supply design features the UCC14240-Q1 bias supply device with integrated isolation transformer and post
regulation. The tight regulation capability of the UCC14240-Q1 minimizes the device conduction loss during
operation. With these designs the gate-drive BOM and PCB footprint can be reduced by up to 30%.
The design philosophy for the power stage aims to maximize performance through high-ampacity, low-
inductance design while minimizing the cost and complexity. To achieve this, five key parameters are
considered. First, due to the high current density and relatively small size of the SiC modules, a high-
performance thermal stackup is implemented to maximize heat transfer. Second, the stray inductance introduced
by the busbar structure is minimized through the use of low-inductance, overlapping planar structures. Third,
low-inductance and high ripple rating capacitors must are utilized to close the high-frequency switching loop
effectively. Fourth, the gate driver high-speed protections and high-noise immunity features are leveraged for
effective switching of the SiC moduels and providing maximum survivability under fault conditions. Lastly, the
power stage's engineering is aimed to minimize complexity for assembly, manufacturing and the system cost.
The inverter measures 279 mm by 291 mm by 115 mm for a total volume of 9.3 L and a power density of up to
32.25 kW/L which is more than 2x comparable Silicon (Si) based inverters.
2.3 Highlighted Products
This reference design features the following Texas Instruments devices.
2.3.1 UCC5880-Q1
The UCC5880-Q1 is a functional safety compliant isolated gate driver targeted for EV/HEV traction inverter
applications. The flexibility of SPI programing of adjustable gate drive strength, blanking times, deglitches,
thresholds, function enables, and fault handling allow for the UCC5880 to support a wide variety of IGBT or
SiC power transistors that are used across all EV/HEV traction inverter applications. UCC5880-Q1 integrates
all of the protection features required in most traction inverter applications. Additionally, the 20-A gate drive
capability eliminates the need for external booster circuit, reducing overall design size. The integrated Miller
clamp circuit holds the gate off during transient events and can be configured to use the internal 4-A pull-down,
or drive an external n-channel MOSFET. Advanced, internal capacitor-based isolation technology maximizes
CMTI performance, while minimizing the radiated emissions.
2.3.2 AM2634-Q1
The AM263x Sitara™ Arm® Microcontrollers are built to meet the complex real-time processing needs of next
generation industrial and automotive embedded products. The AM263x MCU family consists of multiple pin-to-
pin compatible devices with up to four 400-MHz Arm® Cortex®-R5F cores. The multiple Arm® cores can be
optionally programmed to run in lock-step option for different functional safety configurations. The industrial
communications subsystem (ICSS) enables integrated industrial Ethernet communications such as PROFINET
IRT, TSN, or EtherCAT® (among many others), or for standard Ethernet connectivity or custom I/O interfacing.
The AM263x family is designed for advanced motor control and digital power control applications with advanced
analog modules.
2.3.3 TMS320F280039C-Q1
TMS320F280039C-Q1 is a 32-bit DSP from C2000™ real-time microcontroller family, which provides 120 MHz
of signal processing performance for floating- or fixed-point code running from either on-chip flash or SRAM.
The C28x CPU is further boosted by the Floating-Point Unit (FPU), Trigonometric Math Unit (TMU), and VCRC
(Cyclical Redundancy Check) extended instruction sets, speeding up common algorithms key to real-time control
systems.
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The CLA allows significant offloading of common tasks from the main C28x CPU. The CLA is an independent
32-bit floating-point math accelerator that executes in parallel with the CPU. Additionally, the CLA has their own
dedicated memory resources and the CLA can directly access the key peripherals that are required in a typical
control system. Support of a subset of ANSI C is standard, as are key features like hardware breakpoints and
hardware task-switching.
2.3.4 UCC14240-Q1
The UCC142140-Q1 integrates a high-efficiency, low-emissions isolated DC/DC converter for powering the gate
drive of SiC or IGBT power devices in traction inverter motor drives, industrial motor drives, or other high voltage
DC/DC converters. This DC/DC converter provides greater than 1.5 W of power across a 3000 VRMS basic
isolation barrier. TI also has the newer reinforced isolation device, UCC14341-Q1 that takes in a 15 V input and
similarly provides an adjustable isolated output up to 25 V. For an optimized BoM, the UCC14341-Q1 can be
directly connected to the 15 V resolver rail that is commonly available in a traction inverter.
2.3.5 UCC12051-Q1
UCC12051-Q1 is an automotive qualified DC/DC power module with 5-kVRMS isolation rating designed to
provide efficient, isolated power to isolated circuits that require a bias supply with a well-regulated output
voltage. The module integrates a transformer and DC/DC controller with a proprietary architecture to provide 500
mW (typical) of isolated power with low EMI. UCC12051-Q1 integrates protection features for increased system
robustness. The module also has an enable pin, synchronization capability, and regulated 5-V or 3.3-V output
options with headroom.
2.3.6 AMC3330-Q1
The AMC3330-Q1 is a fully-differential precision isolated amplifier with high-input impedance, and an integrated
DC/DC converter that allows the device to be supplied from a single 3.3-V or 5-V voltage supply source from the
low voltage side. The input stage of the device drives a 2nd-order, delta-sigma (ΔΣ) modulator. The modulator
uses an internal voltage reference and clock generator to convert the analog input signal to a digital bitstream.
The drivers (termed TX in the Functional Block Diagram) transfer the output of the modulator across the
isolation barrier that separates the high-side and low-side voltage domains. The received bitstream and clock are
synchronized and processed by a 4th-order analog filter on the low-side and presented as a differential analog
output.
2.3.7 TCAN1462-Q1
The TCAN1462-Q1 is a high-speed Controller Area Network (CAN) transceivers that meets the physical layer
requirements of the ISO 11898-2:2016 high speed CAN specification and the CiA 601-4 Signal Improvement
Capability (SIC) specification. The device reduces signal ringing at dominant-to-recessive edge and enables
higher throughput in complex network topologies. Signal improvement capability allows the applications to
extract real benefit of CAN FD (flexible data rate) by operating at 2 Mbps, or operating at 5 Mbps or higher in
large networks with multiple unterminated stubs.
The device also meets the timing specifications mandated by CiA 601-4; thus, has a much tighter bit timing
symmetry compared to a regular CAN FD transceivers. This provides larger timing window to sample the correct
bit and enables error-free communication in large complex star networks where ringing and bit distortion are
inherent.
2.3.8 ISO1042-Q1
The ISO1042-Q1 device is a galvanically-isolated controller area network (CAN) transceiver that meets the
specifications of the ISO11898-2 (2016) standard. The ISO1042-Q1 device offers ±70-V DC bus fault protection
and ±30-V common-mode voltage range. The device supports up to 5-Mbps data rate in CAN FD mode allowing
much faster transfer of payload compared to classic CAN. This device uses a silicon dioxide (SiO2) insulation
barrier with a withstand voltage of 5000 VRMS and a working voltage of 1060 VRMS. Electromagnetic compatibility
has been significantly enhanced to enable system-level ESD, EFT, surge, and emissions compliance. Used in
conjunction with isolated power supplies, the device protects against high voltage, and prevents noise currents
from the bus from entering the local ground. While the ISO1042-Q1 device is available for both basic and
reinforced isolation, this reference design uses the device featuring reinforced isolation.
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2.3.9 ALM2403-Q1
The ALM2403-Q1 is a dual-power op amp with features and performance that make this device preferable for
resolver-based applications. The high-gain bandwidth and slew rate of the device, along with a continuous high-
output current-drive capability, make this device an excellent choice to provide the low distortion and differential
high-amplitude excitation required for exciting the resolver primary coil. Current limiting and overtemperature
detection enhance overall system robustness, especially when driving analog signals over wires that are
susceptible to faults.
2.3.10 LM5158-Q1
The LM5158x-Q1 is a wide input range, non-synchronous boost converter that uses peak-current-mode control.
The device can be used in boost, SEPIC, and flyback topologies. The device can start up with a minimum of 3.2
V. The device can operate with input supply voltage as low as 1.5 V if the BIAS pin is greater than 3.2 V. The
internal VCC regulator also supports BIAS pin operation up to 60 V (65-Vabsolute maximum) for automotive load
dump. The switching frequency is dynamically programmable from 100 kHz to 2.2 MHz with an external resistor.
Switching at 2.2 MHz minimizes AM band interference and allows for a small design size and fast transient
response. The device provides an optional dual random spread spectrum to help reduce the EMI over a wide
frequency span.
2.3.11 LM74202-Q1
LM74202-Q1 is a diode with integrated back-to-back FETs and enhanced built-in protection circuitry. LM74202-
Q1 provides robust protection for all systems and applications powered from 4.2 V to 40 V. The device integrates
reverse battery input, reverse current, overvoltage, undervoltage, overcurrent and short circuit protection. The
precision overcurrent limit (±5% at 1 A) helps to minimize over design of the input power supply, while the fast
response short circuit protection immediately isolates the load from input when a short circuit is detected. The
device allows the user to program the overcurrent limit threshold between 0.1 A and 2.23 A with an external
resistor. The device monitors the bus voltage for brown-out and overvoltage protection, asserting the FLTb pin to
notify downstream systems.
2.4 System Design Theory
2.4.1 Microcontrollers
The microcontroller, as the primary control unit, is at the heart of the system. To demonstrate the wide range
of features and capabilities offered by TI's MCU devices, the TIDM-02014 design supports devices from TI's
C2000™ and Sitara™ MCU families. To simplify switching between the two devices, their respective control card
evaluation modules with mutual pin compatibility are used. The features of the control cards are described
further.
2.4.1.1 Microcontroller – C2000™
The F280039C controlCARD (TMDSCNCD280039C) provides a great way to learn and experiment with
F28003x devices. This controlCARD is intended to provide a well-filtered robust design that is capable of
working in demanding applications such as traction inverters, on-board chargers, DC-DC converters among
others. With an on-board debugger, the F280039C controlCARD provides and easy way to evaluate the powerful
real-time capabilities of F28003x MCU devices.
Similar to the AM263x control card, the F280039C control card plugs directly into the Wolfspeed main control
board. However,note that several resistors on the control need to be populated or depopulated when switching
between the control cards. The details of the resistor changes are provided in Section 3.1.
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Figure 2-2. F280039C Control Card
2.4.1.2 Microcontroller – Sitara™
The AM263x Control Card Evaluation Module (EVM) is an evaluation and development board for the Texas
Instruments Sitara™ AM263x series of microcontrollers (MCUs). This EVM provides an easy way to start
developing traction inverter designs on the AM263x MCUs with on-board emulation for programming and
debugging as well as buttons and LED for a simple user interface. The control card also enables header pin
access to key for rapid prototyping.
The Control card plugs directly into the Wolfspeed main control board and is fully supported with software for
customers to quickly develop their traction inverter designs to maximize the performance and integration built
into the AM263x MCUs.
Figure 2-3. AM263x Sitara™ Control Card
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2.4.2 Isolated Bias Supply
As shown in the schematic in Figure 2-4, the UCC14240-Q1 DC/DC converter module operates from a single
24-V (P24V) input and is configured to provide dual, +15 V (VCC2), -4 V (VEE2), 3-kV RMS isolated, bias supply
voltage rails to the UCC5880-Q1 isolated gate driver. VCC2 and VEE2 are programmed by resistor dividers R13,
R19 and R15, R20 and are tightly regulated to within ±1.3%, providing +15 V and -4 V as recommended by
the Wolfspeed XM3, SiC Half-Bridge Module. Startup is initiated when the digital host first provides the enable
signal (EN_PS) required to pull the UCC14240-Q1 ENA pin to an active high state, allowing VCC2 and VEE2
to soft-start. The UCC14240-Q1 then provides an active low, LVTTL compatible, power good signal (N_PG),
notifying the host that P24V is above the 21-V, UVLO turn-on threshold and VCC2 and VEE2 are above 90%
of their set regulation target values (VCC2>13.5 V and VEE2>3.6 V respectively). This connection between the
host and UCC14240-Q1 makes sure the UCC5880-Q1, gate driver has sufficient bias voltage present to safely
allow inverter switching to begin.
TP3
-4V
+15
V
N_PG
EN_PS
10.0k
R17
10.0k
R22
TP7
0
R21
TP4
Green
21
D1
1.00k
R14
35V
10uF
C14
69.8k
R13
10.7k
R19
17.8k
R20
10.7k
R15
100nF
50V
C4
100nF
50V
C11
100nF
50V
C10
Vref = 2.5V
Vref = 2.5V
50V
3.3uF
C3
50V
3.3uF
C13
VIN
6
VIN
7
VEE 26
VEE 27
VDD 28
VDD 29
RLIM 32
FBVEE 33
FBVDD 34
VEEA 35
GNDP
5
GNDP
1
PG
3
GNDP
2
ENA
4
GNDP
8
GNDP
9
GNDP
10
GNDP
11
GNDP
12
GNDP
13
GNDP
14
GNDP
15
GNDP
16
GNDP
17
GNDP
18
VEE 19
VEE 20
VEE 21
VEE 22
VEE 23
VEE 24
VEE 25
VEE 30
VEE 31
VEE 36
UCC14240DWNQ1
U1
GND
100nF
50V
C6
GND
100nF
50V
C8
35V
10uF
C7
GND
ENA
RLIM
FBVDD
FBVEE
GND
D2
P24V
P3V3
VCC2
VEE2
SOURCE
4.64k
R16
nPG
NT1
Net-Tie
50V
330pF
C9
50V
330pF
C12
10µF
50V
C5
10.0k
R18
TP6
VCC2
P3V3
P24V
N_PG
EN_PS
VEE2
100nF
50V
C44
4.75
R66
100nF
50V
C42
Figure 2-4. UCC14240-Q1 Bias Supply Schematic
2.4.3 Power Tree
2.4.3.1 Introduction
The control board contains complete power supply tree to run all features on the system. The power tree
provides power to:
• All on-board peripherals
• Gate-driver boards
• MCU control card (both C2000-based or AM263x-based)
• Internal and external sensors
The external off-line DC adapter is assumed to be used with the board. Adapter must be specified as 12VDC
nominal (8-16VDC) 3.3ADC.
Power is connected through barrel jack connector with 2 mm center pin J100 (see part data sheet).
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2.4.3.2 Power Tree Block Diagram
LM74202-Q1
UCC14240
Isolated Power Chip
LDO
LDO
dVdT
150 m

IN OUT
UVLO
RTN ILIM
OVP
IMON
GND
MODE
FLT
CB
SW
L
FB
VIN
EN
GND
EN
GNDP
VINP
SYNC
VISO
GNDS
SELSYNC_OK
Isolation Barrier
CS
SS
SW
COMP
VCC
PGND
BIAS
RT
UVLO/SYNC
FB
AGND
PGOOD
PGOOD
GND1
VCC2 (U, V, W)
VEE2 (U, V, W)
+24V_H P24VH
3x UCC14240
SHDN
+12V_H
0.4 Amax

0.42 Amax
TPS7B6933-Q1
+3.3V_H
High side logic

3x 6.5mAmax
dVdT
LM74202-Q1
150 m

IN OUT
UVLO
RTN ILIM
OVP
IMON
GND
MODE
FLT
CS
SS
SW
COMP
VCC
PGND
BIAS
RT
UVLO/SYNC
FB
AGND
PGOOD
PGOOD
UCC14240
Isolated Power Chip
GND1
VCC2 (U, V, W)
VEE2 (U, V, W)
+24V_H P24VH
3x UCC14240
SHDN
+12 V_L
0.4 Amax

1.3 Amax
TPS7B6933-Q1
LDO +3.3 V_L
Low side logic

3x 6.5 mAmax
TLV733P-Q1
LDO +3.3 V_H

50 mAmax
+3.3 V
Interfaces and
resolver
TLV733P-Q1 ~

20 mAmax
Voltage and
Current Sensing

3x 72 mAmax
VCC2H
MIDDLE
VEE2H
VCC2L
SOURCEL
VEE2L
LM5158-Q1

3x114 mAmax
+12V_L
0.81Amax
OV, OC
LM74202-Q1
MCU control card
ISO CAN sec
121 mAmax
CAN
70mAmax
500mAmax
+5 V_ISO
ISO CAN
LMR50410-Q1

691 mAmax
LM5158-Q1

3x114 mAmax
OV, OC
LM74202-Q1
VIN_12 V
J100
2mm center pin
barrel connector.

3.22 Amax
dVdT
LM74202-Q1
150 m

IN OUT
UVLO
RTN ILIM
OVP
IMON
GND
MODE
FLT
SHDN
LM74202-Q1
CS
SS
SW
COMP
VCC
PGND
-15 V
BIAS
VIN
RT
UVLO/SYNC
FB
AGND
PGOOD
PGOOD
+15 V
GND
+5 V
UCC12051-Q1
+5 V
73 mAmax
+12 V_LEM
1.5 Amax
LM5157-Q1

1.026 Amax (from both rails)
LEM current sensors
3x146 mAmax (+/-15V rail)
Resolver excitation
150 mAmax (+15V rail only)
OV, OC
Figure 2-5. Power Tree Block Diagram
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2.4.3.3 12 V Distribution and Control
The 12-volt domain is distributed into three separate rails.
Table 2-1. 12 V Distribution and Control
Rail Regulator Load Maximum current
+12V_H LM5158-Q1 based SEPIC High-side 24-volt domain 0.4 A
TPS7B6933-Q1 LDO High-side 3.3-volt logic 0.02 A
+12V_L LM5158-Q1 based SEPIC Low-side 24-volt domain 0.4 A
TPS7B6933-Q1 LDO Low-side 3.3-volt logic 0.02 A
TLV733P-Q1 LDO High-voltage sensing and current sensing
signal conditioning
0.05 A
TLV733P-Q1 LDO Digital interfaces and resolver front-end 0.02 A
LMR50410-Q1 simple switcher® 5-volt supply domain 0.81 A
+12V_LEM LM5157-Q1 based SEPIC LEM current sensor modules 1.5 A
Resolver excitation
These rails are separated and protected with LM74202-Q1 ideal diodes.
The primary function of LM74202-1 is to provide overvoltage (OV) and short circuit protection. For debugging
or experimental purposes the MCU can control the LM74202-Q1 with a logic signal (Power_EN_LoadSW) when
powered from different power source for example through programming USB cable.
2.4.3.4 Gate Drive Supply
Low voltage domain of the isolated gate driver units (GDU) (UCC5880-Q1) is powered by the TPS7B6933-Q1
LDO. The high-voltage (HV) domain of the GDU is powered using UCC14240-Q1 isolated DC/DC modules.
These modules were selected for their compactness and ease of use.
The voltage generated by UCC14240-Q1 is set to total 19 V ( VCC2 = 15 V and VEE2 = -4 V ). The high-voltage
negative pole is a virtual ground for UCC14240-Q1.
The maximum power consumption on the high-voltage side of each UCC14240-Q1 DC/DC module can be
estimated as a worst-case switching condition for fSWmax = 30 kHz and CL = 100 nF:
P2 = fSWmax VCC2 −VEE2 2CL+ VCC2 −VEE2 ICCq2 (1)
The secondary quiescent current of UCC5880-Q1 can be found in the data sheet as ICC2q = 15 mA. Resulting
secondary power consumption is then calculated as 1.368 W. Assuming 50% efficiency this corresponds to 114
mA of supply current on 24-volt input side of each UCC14240-Q1.
These UCC14240-Q1 DC/DC modules require pre-regulated 24 V. 24-volt pre-regulator is implemented as
LM5158-Q1 based SEPIC with coupled inductors. The SEPIC topology supports appropriate input voltage range
and the LM5157/8-Q1 converters are designed for in this case because of their versatility and due to random
spread spectrum also for the noise properties.
The component values for the power supply design were calculated using the LM5158 Quick Start Calculator
tool for SEPIC. The main input parameters of the supply are shown in Table 2-2.
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Table 2-2. SEPIC Converter Design Parameters for Gate Drive Power Supply
Parameter Value
Min Nom Max Unit
VINPUT 8 12 16 V
fsw 435 kHz
VLOAD 24 V
ILOAD 0.35 A
Each 24-volt SEPIC powers three UCC14240-Q1 therefore ILOAD = 0.35A is listed (see Figure 2-5).
2.4.3.5 5-Volt Supply Domain
The 5-Volt power supply features LMR50410-Q1 Simple Switcher®. The power supply mainly powers the MCU
control card plugged into the HSEC PCB connector.
LMR50410-Q1 has maximum output current of 1 A which gives power budget of 10 W. At efficiency of 90% it
draws about 0.92A from the 12-Volt power rail at maximum power. Realistic estimate of the load current in all
branches is shown in Figure 2-5.
Out of assumed MCU control cards, the AM2634 control card consumes higher power so the sizing of the power
budget is based on the consumption estimate of AM2634 control card.
The AM2634 based control card consumes in average 2.5 W with all unused peripherals disabled. The 5-volt
power supply domain then offers sufficient margin to support various use cases and operation profiles.
CAN interface consumes 70 mA and the isolated CAN 122 mA totaling 192 mA from 5-volt rail. The isolated
CAN interface is powered using UCC12051-Q1 DC/DC power module. This module provides maximum 500 mW
of power at 5 V and 5 kVrms isolation. At 73 mA loading on the isolated side by the ISOCAN1042-Q1 we expect
122 mA on the primary side assuming 60% efficiency.
2.4.3.6 Current and Position Sensing Power
The current and position sensing (resolver) is powered from the +12 V_LEM power rail. The LEM LF 510-S
current transducers require symmetrical power supply of positive and negative 15 V.
The current draw for one current measurement channel from +/-15 V power supply is defined as (for details see
LEM LF 510-S data sheet):
ICCLEM mA = 44mA + 0.2IMEAS A(2)
Where 44 mA is the quiescent current of the transducer and IMEAS is the measured current. Peak measured
current determines the maximum power draw. In our case we assume maximum 509 A of peak measured
current (see note in the schematic diagram). This corresponds to 146 mA current consumption.
+15 V rail powers the resolver excitation amplifier. The current consumption naturally depends on the resolver
type. Estimated current budget for this function is 150 mA from the +15 V rail.
A dual output SEPIC topology was selected to provide symmetrical 15V supply featuring LM5157-Q1. Similarly,
as LM5158-Q1 this wide Vin converter has random spread spectrum for better noise performance. LM5157-Q1
simultaneously drives two independent SEPIC stages connected in series. To be able to use the LM5157/58
calculation spreadsheet for component calculation the total ILOAD must be determined. If we assume to be the
VLOAD = 15 V we need to multiply the current transducer consumption by a factor of two. This represents two
driven branches (creating the +/-15 V). ILOAD can be calculated as:
ILOAD = 150mA + 2 × 3 × 146mA = 1026mA (3)
Where factor of three represents the three channels connected to the power supply and 150 mA represent the
power budget for resolver excitation.
For component calculation in the calculation spreadsheet following parameters have been used:
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Table 2-3. SEPIC Converter Design Parameters for Current and Position
Sensing Circuits
Parameter Value
Min Nom Max Unit
VINPUT 8 12 16 V
fsw 435 kHz
VLOAD 15 V
ILOAD 0.35 A
3 Hardware, Software, Testing Requirements, and Test Results
3.1 Hardware Requirements
This section details the hardware and explains the different sections on the board and how to set them up for the
test outlined in this design guide.
3.1.1 Hardware Board Overview
Figure 3-1 shows the assembled inverter system with the functional sections highlighted. Hardware details of the
sections are provided further.
Figure 3-1. Functional Sections of TIDM-02014 Inverter System
3.1.1.1 Control Board
The control board accepts the MCU control cards, provides auxiliary power, provides interfaces for position,
voltage and current sensing, communication. The control board also interfaces to the gate drive and bias supply
board, providing power and SPI connection between MCU and gate drivers. Since the control board accepts
control cards, the same board maybe used to test the TIDM-02014 system with TI's AM263x MCU as well as the
TMS320F280039C MCU. It is to be noted, however, that several 0R resistors need to be changed between the
two configurations. The list of changes in shown in Table 3-1.
Table 3-1. Resistor Changes for AM263x and F280039C Configurations
MCU Control Card Populate Depopulate
F280039C R1110, R1113, R1116, R1118, R1120, R1121, R1126, R1127 R1109, R1114, R1115, R1125, R1123, R1124, R1122
AM263x R1109, R1115, R1118, R1122, R1123, R1124, R1125 R1110, R1113, R1114, R1116, R1120, R1121, R1126,
R1127
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3.1.1.2 MCU Control Card – Sitara™
The key interfaces and connections to the AM263 Control card are shown in Figure 3-2.
The pinout of the AM263x Control Card is available in the Control Card user guide.
Figure 3-2. AM263x Control Card Hardware Description
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3.1.1.3 MCU Control Card – C2000™
The components and their corresponding functions for F280039C Control card are shown in Figure 3-3.
The Control Card user guide provides further details on configuring and debugging the board.
Figure 3-3. F280039C Control Card Hardware Sections
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3.1.1.4 Gate Driver and Bias Supply Board
The components and accessible test points on the gate drive and bias supply board are shown on the Figure
3-4. Pinouts of the J9 connector are described in the Table 3-2.
Figure 3-4. Gate Driver and Bias Supply Board
Table 3-2. Connector J9 Pinout
Pin Signal Pin Signal
1 P3V3H_T 2 GND
3 PV3VL_T 4 GND
5 SDIL_T 6 NCSH_T
7 NCSL_T 8 SDOH_T
9 GND 10 CLK
11 GND 12 PWMN
13 GND 14 PWMP
15 GND 16 GND
17 ASCL_T 18 N_FLT2H_T
19 GND 20 N_FLT1H_T
21 GD2L_T 22 GD0H_T
23 GD1L_T 24 GD1H_T
25 GD0L_T 26 GD2H_T
27 GND 28 ASC_EN
29 N_FLT1L_T 30 ASCH_T
31 N_FLT2L_T 32 GND
33 EN_PSL_T 34 N_PGH_T
35 N_PGL_T 36 EN_PSH_T
37 P24VH_T 38 GND
39 P24VL_T 40 GND
3.1.1.5 DC Bus Voltage Sense
A voltage sense connection for the DC bus voltage is provided by a board-to-board connector between the
discharge PCB and the connector on the bottom side of the controller. This allows the controller application to
monitor the DC bus voltage. The full bus voltage is present at connector J8 on the controller and is stepped
down through a voltage divider and filtered before reaching the ADC input. A 0-1200 V DC bus voltage signal is
scaled to a 0-3 V ADC voltage.
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3.1.1.6 SiC Power Module
3.1.1.6.1 XM3 SiC Power Module
Wolfspeed’s XM3 module is designed to simplify SiC power modules by creating an all new package that is
both high-performance and easy to use. Wolfspeed has developed a high-performance next generation module
that is easy to use and has been optimized in a manner that is intended to achieve the maximum performance
out of all sizes of commercially available 650–1700 V Wolfspeed C3M™ SiC MOSFETs. It offers the capability
to carry high currents (300 to >600 A) in a small footprint (53 x 80 mm) with a terminal arrangement that
allows for straight-forward bussing and interconnection. A low-inductance, evenly matched layout results in high
quality switching events, minimizing oscillations both internal and external to the module. The module has a
stray inductance of only 6.7 nH. When coupled with the low-inductance bussing and capacitors in this reference
design, a total loop inductance of 12 nH is obtained, which is lower than the internal stray inductance of many
standard power module packages. The XM3 platform offers 40% of the volume and 45% of the footprint of a
package that is typically used in the industry as shown in Figure 3-5 and therefore offers a more compact power
module for high power density systems. Table 3-3 lists which variant of the XM3 module is included with each
three-phase inverter reference design.
Figure 3-5. Size Comparison Between XM3 (Left), 62 mm (Center), and EconoDUAL™(Right)
Table 3-3. XM3 Power Module Part Number Reference
Reference Design Module Part Number
CRD300DA12E-XM3 C4B450M12XM3
CRD250DA12E-XM3 C4B425M12XM3
CRD200DA12E-XM3 C4B400M12XM3
3.1.1.6.2 Module Power Terminals
The current loops in the XM3 power module have been designed such that they are wide, low profile, and
evenly distributed between the devices so that they each have equivalent impedances across a switch position.
The power terminals are vertically offset as shown in Figure 3-6 such that the bus bars between the DC link
capacitors and the module can be laminated all the way up to the module without requiring bends, coining,
standoffs, or complex isolation. A representative 3-phase inverter bussing is illustrated in Figure 3-7. Ultimately
this achieves a low-inductance throughout the entire power loop from the DC link capacitors to the SiC devices.
A XM3 module without devices was connected to a Keysight E4990A Impedance Analyzer to extract the
parasitic inductance of the package. The power loop inductance from V+ to V- is 6.7 nH measured at 10 MHz.
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Figure 3-6. Side View of XM3 Module Showing Non-planar Power Leads
Figure 3-7. Illustration Showing 3-Phase Bussing Layout
3.1.1.6.3 Module Signal Terminals
The signal pins on the XM3 module consist of four sets of male header pins grouped by function located on
the left and right edge of the module as shown in Figure 3-8. Along the left side are the gate pins for both
the high side and low side switch positions and their associated source-kelvin pins. In the upper right position
is the Desat/Overcurrent pins which are internally connected to the V+ power terminal to provide a connection
point for high side gate driver protection circuitry to measure VDS. In the lower right position are the pins for
the internal negative temperature coefficient (NTC) temperature sensor. The NTC is located on an electrically
isolated substrate pad in close proximity to the lower switch power devices and can need additional galvanic
isolation according to application requirements. With UCC5880-Q1 gate driver the NTC measurement signal is
isolated up to 5.7 kV. The signal connectors on the right side both have one pin not populated so that the gate
driver can be keyed to prevent improper installation.
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Figure 3-8. XM3 Module Signal Terminal Pinout
3.1.1.6.4 Integrated NTC Temperature Sensor
The NTC temperature sensor built into the power module is sensed and fed back to the controller via an isolated
digital signal. This signal is a 50% duty cycle square wave with varying frequency. The temperature sensor
is positioned as close as possible to the power devices while remaining electrically isolated from them and
therefore provides an approximate baseplate temperature. The temperature reported by the NTC differs largely
from the junction temperature of the SiC MOSFETs and must not be used as an accurate junction temperature
measurement. There are two ways to measure the NTC feedback signal for the three XM3 modules with the
controller. The first method is using the enhanced capture (eCAP) peripheral to digitally measure the frequency
of the signal coming directly from the differential receivers. The relationship of the NTC signal frequency to the
NTC temperature is given in Figure 3-9 and Table 3-4. For the second method, the frequency signal is filtered
and converted into an analog signal which can be measured by ADC on the controller. The analog voltage
measures 0.38 V when the frequency is 4.6 kHz and 2.5 V when the frequency is 30.1 kHz.
NTC Temperature (C)
Frequency (kHz)
0 25 50 75 100 125 150 175
0
5
10
15
20
25
30
35
Figure 3-9. NTC Temperature vs Signal Frequency
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Table 3-4. NTC Temperature, Resistance, and Frequency Correlation
NTC Temperature (°C) NTC Resistance (Ω) Frequency Output (kHz)
0 13491 4.6
25 4700 10.3
50 1928 17.1
75 898 22.8
100 464 26.4
125 260 28.3
150 156 29.5
175 99 30.1
NTC Resistance ()
Virtual Junction Temperature (C)
1000 1500 2000 2500 3000 3500 4000 4500
40
60
80
100
120
140
160
180
Figure 3-10. CAB450M12XM3 Virtual-junction Temperature (TVJ) vs NTC Resistance with 25°C Coolant.
The mapping between the NTC resistance (RNTC in Ohms) of the CAB450M12XM3 module and the virtual
junction temperature (TVJ) is shown in Figure 3-10. It is the calculated using the following equation:
TVJ =  −87.12 × ln RNTC + 786.14 (4)
One additional temperature sensor is installed on the controller PCB to provide a measurement of the ambient
temperature inside the reference design case. This temperature sensor consists of a 10 kΩ NTC surface mount
thermistor and a 10 kΩ fixed resistor forming a voltage divider. As the temperature increases so will the voltage
at the midpoint of the voltage divider. This voltage is low-pass filtered to remove any high-frequency noise from
the slowly changing temperature. The conversion between this voltage signal, VT, and the temperature of the
thermistor (in Kelvin) can be done with the following:
T=ln 3.3/VT−1
3900 +  1
298.15
−1
 (5)
3.1.1.7 Laminated Busing and DC Bus Capacitors
The vertical offset of the module’s power terminals allows the busbar design to remain simple and cost-effective
while maintaining a low power loop inductance. A low-inductance busbar is utilized to interconnect the DC-link
capacitors (located under the busbar) to the power modules. Again, the offset power module terminals enable
the busbar assembly to have no bends or standoffs, which reduces cost and maximizes overlap. The capacitors
are affixed as close as possible to minimize the total loop area. As can be seen in Figure 3-11, the busbars
consist of one flat plate connecting V+ terminals of the modules and capacitors followed by an insulator and then
a second flat plate connecting to the raised V- terminals of the modules and the capacitors with coining or spacer
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