Texas Instruments LM74930Q1EVM User manual

EVM User's Guide: LM74930Q1EVM LM74930-Q1
LM74930-Q1 Evaluation Module for Ideal Diode Controller
Description
The LM74930-Q1 Evaluation Module
(LM74930Q1EVM) helps designers evaluate the
operation and performance of the LM74930-Q1 ideal
diode controller with power path ON/OFF control,
overcurrent, short-circuit and overvoltage protection.
The wide input supply of LM74930-Q1, 4V to 65V,
allows protection and control of 12-V and 24-V
automotive battery powered ECUs. The LM74930-
Q1 can drive back-to-back external N-Channel
MOSFETs connected in common source topology
to realize surge stopper functionality. With first
MOSFET in the power path, the device allows load
disconnect (ON/OFF control) in case of overcurrent
and surge/overvoltage events using HGATE control.
An integrated ideal diode controller (DGATE) drives
the second MOSFET to replace a Schottky diode for
reverse input protection and output voltage holdup.
Features
• Reverse current blocking feature required for
ORing application
• Input reverse battery protection
• Drives external back-to-back N-Channel MOSFETs
in common source configuration
• Surge protection against transients like 200 V
unsuppressed load dump
• Adjustable overcurrent and short circuit protection
• Analog current monitor output with 10% accuracy
(IMON)
• Adjustable overvoltage and undervoltage
• MODE pin to allow bi-directional current flow
(MODE = Low)
Applications
• 12 V/24 V automotive reverse battery protection
•Industrial transport
• Redundant power supply ORing
LM74930Q1EVM
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1 Evaluation Module Overview
1.1 Introduction
This user’s guide describes the LM74930Q1EVM evaluation module for evaluating the performance of the
LM74930-Q1 ideal diode controller devices. The LM74930-Q1 ideal diode controller drives and controls external
back to back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control, as well
as overcurrent, short-circuit, and overvoltage protection. This document provides EVM configuration information
and test setup details for evaluating the LM74930-Q1 device. The EVM schematic, board layout, and bill of
materials (BOM) are also included.
Table 1-1. LM74930Q1EVM Evaluation Board Options and Setting
Part Number EVM Function Vin Range Vin UVLO Vin OVP ENABLE
(EN)
Overcurrent
Protection Features
Low
Setting
Hi
Setting
LM74930Q1EVM
Ideal diode with
surge stopper
functionality,
circuit breaker,
under and
overvoltage
protection with
fault output
4 V to 65 V 5.3 V 36.96 V Active high 4 A 6 A
Selectable
overcurrent
threshold and timer
setting
1.2 Kit Contents
Table 1-2. LM74930Q1EVM Kit Contents
Item Description Quantity
LM74930Q1EVM PCB 1
1.3 Specification
• 4-V to 65-V input range
• 4-A and 6-A adjustable overcurrent protection using on-board jumpers
• Programmable circuit breaker timer
• Load current monitoring output
• Programmable auto-retry and latch options
• LED for fault indication
• LED indication for output ON/OFF detection
1.4 Device Information
LM74930-Q1 is an ideal diode with surge stopper, circuit breaker, overvoltage protection and fault output. The
LM74930-Q1 ideal diode controller drives and controls external back to back N-Channel MOSFETs to emulate
an ideal diode rectifier with power path ON/OFF control with overcurrent and overvoltage protection. The wide
input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs.
The device can withstand and protect the loads from negative supply voltages down to –65 V.
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2 Hardware
2.1 Test Points and Connectors
Table 2-1 lists the LM74930Q1EVM evaluation board input and output connector functionality. Table 2-2 and
Table 2-3 describe the test point availability and the jumper functionality.
Table 2-1. Input and Output Connector Functionality
Connector Label Description
J1 VIN Power input connector to the positive rail of the input power supply.
J3 PGND Ground connection for the power supply.
J2 VOUT Power output connector to the positive side of the load.
J9 VOUT_LC Power output connector after the output CLC Filter.
J4 PGND Ground connection for the load.
Table 2-2. Test Points Description
Test Points Label Description
TP1 VIN Input power supply to the EVM.
TP2 VOUT Output from the EVM.
TP3, TP4, TP14 PGND EVM ground.
TP5 EN Enable input.
TP6 VS Input power supply to the IC.
TP7 DGATE Diode controller gate drive output.
TP8 HGATE GATE driver output for the HSFET.
TP9 FLT/ Active low open drain fault output.
TP10 MODE MODE input to disable reverse current blocking function of DGATE.
TP11 TMR Fault timer input.
TP12 IMON Analog current monitor output.
TP13 C Cathode of the ideal diode.
TP15 VREG Onboard regulated voltage supply
Table 2-3. Jumper and LED Descriptions
Jumper Connection Description
J5 1-2 EN connected to VREG. EN pulled High.
2-3 EN connected to GND. EN pulled Low.
J6 1-2 MODE connected to VREG.
2-3 MODE connected to GND. RCB disabled.
J7 1-2 Output high D5 LED indication.
J8
1-2 OVCLAMP connected to OV for overvoltage clamp with timer functionality.
2-3 OVCLAMP connected to GND when OV clamp not needed.
J10
1-2 TIMER duration set to 0.14ms.
3-4 TIMER duration set to 0.68ms,
5-6 Controller set in latch-off mode,
J11
1-2 Overcurrent protection disabled.
3-4 Overcurrent protection threshold set to 4A.
5-6 Overcurrent protection threshold set to 6A.
J12 1-2 IMON voltage set to 0.65V/A.
3-4 IMON voltage set to 0.43V/A.
J13
1-2 Pulls FLT/ pin to external supply
2-3 Pulls FLT/ pin to onboard VREG supply.
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Table 2-3. Jumper and LED Descriptions (continued)
Jumper Connection Description
J14
1-2 Pulls OV resistor divider to VIN
2-3 Pulls OV resistor divider to VOUT
2.2 Test Equipment and Setup
2.2.1 Power Supplies
One adjustable power supply with 0-V to 60-V output and 0-A to 10-A output current limit.
2.2.2 Meters
One DMM minimum needed.
2.2.3 Oscilloscope
A DPO2024 or equivalent, 3 × 10 voltage probes, and a DC current probe.
2.2.4 Loads
One resistive load or equivalent that can tolerate up to 50-A DC load at 60 V and capable of the output short.
2.3 Test Setup and Procedures
Make sure the evaluation board has default jumper settings as shown in Table 2-4.
Table 2-4. Default Jumper Setting for LM74930Q1EVM Evaluation Board
Jumper Default Setting Functionality
J5 1-2 EN connected to VREG. EN pulled High.
J6 1-2 MODE connected to VREG.
Reverse current blocking enabled.
J7 1-2 D5 LED indication when output High.
J8 2-3 OVCLAMP connected to GND.
OVCLAMP functionality disabled.
J10 1-2 TIMER set to 0.14 ms.
J11 3-4 Overcurrent protection threshold set to 4 A.
J12 1-2 IMON voltage set to 0.65 V/A.
J13 2-3 FLT/ pulled up to VREG.
J14 1-2 OV resistor ladder pulled to VIN.
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Figure 2-1. LM74930Q1EVM Setup With Test Equipment
Use the following instructions before starting any test and repeat again before moving to next test.
1. Set the power supply output VIN to 0 V.
2. Turn ON the power supply and set the power supply output VIN to 12 V and current limit of 10 A.
3. Turn OFF the power supply.
4. Set the jumper setting on EVM to default position as shown in Table 2-4.
2.3.1 Power-up and Power-down with Input Voltage
Use the following instructions to capture the precharging current profile.
1. Set the input supply voltage VIN to 12 V and current limit of 10 A.
2. Verify that the J5 jumper setting is set to 1-2.
3. Turn ON the input power supply.
4. Observe the start-up profile of charge pump voltage VCAP , HGATE, DGATE and output voltage.
5. Turn OFF the input power supply.
6. Observe the shutdown profile of charge pump voltage (VCAP – VVS), output voltage, HGATE, and DGATE.
Figure 2-2 shows an example of power-up with EN profile captured on the LM74930Q1EVM evaluation board.
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Figure 2-2. LM74930-Q1 Start-Up With VIN - HGATE, DGATE and VOUT
Figure 2-3. LM74930-Q1 Start-Up With VIN - VS, CAP and HGATE
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2.3.2 Unsuppressed Load Dump 200 V - Output Clamp
Use the following instructions to verify the overvoltage protection feature of LM74930-Q1.
1. To test 200 V Unsuppressed Load Dump, the LD200N or similar equipment is needed as the input power
supply.
2. Make sure the J8 jumper setting is set to 2-3.
3. Set the input supply voltage VIN to 24 V and current limit of 5 A.
4. Turn ON the power supply and observe start-up of output voltage.
5. Now apply 200 V Unsuppressed Load Dump using LD200N equipment.
6. Observe OVCLAMP operation of LM74930-Q1 when input voltage is above OV threshold.
Figure 2-4. Unsuppressed Load Dump 200 V - Output Clamp (OVCLAMP = GND)
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2.3.3 Overcurrent Protection Test
Use the following instructions to perform the overcurrent test on the LM74930Q1EVM.
1. Set the input supply voltage VIN to 12 V and current limit of 10 A.
2. Turn ON the power supply and observe start-up of output voltage, HGATE, and DGATE.
3. By default the EVM is configured for 4-A overcurrent protection.
4. Apply 4-A load at the output with rheostat or electronic load and gradually increase the load current to 6 A.
5. Observe the overload behavior of LM74930-Q1.
Figure 2-5 and Figure 2-6 show test waveforms for an overcurrent fault.
Figure 2-5. Overcurrent Response of LM74930-Q1 for a Load Step From 3.8 A to 6 A With 4-A
Overcurrent Protection Setting
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Figure 2-6. Auto-Retry Response of LM74930-Q1 for an Overcurrent Fault
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2.3.4 Output Hot-Short Test
Use the following instructions to perform output the hot-short test.
1. Set the input supply voltage VIN to 12 V and current limit of 10 A.
2. Turn ON the power supply and observe start-up of output voltage, HGATE, and DGATE.
3. Short the output to GND. That is, VOUT to GND with a cable and observe the short-circuit response of
LM74930-Q1 using an oscilloscope.
Figure 2-7 shows hot-short response of LM74930-Q1 on LM74930Q1EVM evaluation board.
Figure 2-7. Output Hot-Short Response of LM74930-Q1 Device
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3 Hardware Design Files
3.1 Schematic
Figure 3-1 illustrates the EVM schematic.
PGND
2.2uF
C5
PGND
J1
J3 J4
J2
GND
VIN = 12V Nominal, 200V Load Dump
5A Max Current
1
2
J7
Green
1
VOUT = 12V Nominal
5A Max Current
2
D5
12k
R5
220uF
C11
J9
C8
1uF
200
R7
1uH
L2
NT1
TP14
33V
D1 70V
D2
1
2
3
J5
100k
R10
GND
10nF
C6
C2
0.1µF
C1
100nF
50
R4
50
R3
100
R6
GND
1 2
3 4
J12
IMON
Current Monitor Scaling
1 2
3 4 5 6
J10
Circuit Breaker Timer Setting
TMR
GND GND
GND
R17
100k
50V
C7
330pF
6A 2.6V at 6A2.6V at 4ANoOCP 4A
10nF
C4
3.3nF
C3
GND
IMON
ILIM
TMR
10.0k
R11
VS
VREG
GND
1
2
3
J6
GND
10.0k
R12 1
2
3
J8
C
OUT
FLT/
1 2
3 4 5 6
J11
ILIM
GND
Over Current Protection Setting
0
R18
VIN VOUT
VIN
TP1
VOUT
TP2
PGND
TP4
PGND
VS
TP3
FLT/DGATE HGATE
TP6 TP7 TP8 TP9
IMONTMR GND
TP11 TP12
DGATE
MODE
HGATE
UVLO
A
1
2
3
J13
VEXT
VREG
10.0k
R23
Red
12
D6
0
R9
R15
100k
GND
R16
11.5k
1.65k
R14
22nF
C13
100uF
C10
C
TP13
EN
TP5
TP10
0
R25
0
R26 VOUT_LC
4
1 5-6-7-8
2
3Q2
4
1 5-6-7-8
2
3Q4
0.001
R2
0
R8
0.001
R1
OUT
56V
D7
OV_CLAMP
OV
GND
10k
R13
GND
1uF
C18
D8
1
32
Q1
1
32
Q3
1
2
3
J14 VIN
VOUT
1
23 Q5
GND
2.2µF
25V
C17
VREG
4.7V
D10
MM3Z4V7ST1G
D9
VIN
1N4148WS-7-F
R27
20.0k
5OV
16
OV_CLAMP
20
CS+
CS- 19
12
FLT
A
2C24
23
CAP
1
DGATE
6EN
25
RTN
14
HGATE
11 ILIM
10 IMON
18
ISCP
7MODE
15
OUT
SW
3
TMR
9
4UVLO
22 VS
8
NC
NC 17
NC 21
13
GND
U1
LM74930QRGEQ1
TP15
C16
0.1µF
0.01uF
C9
0.047uF
C12
VREG
MODE
A
TP16
R20
100k
150k
R19
0.14ms 0.68ms
24.0k
R22
36.0k
R21
0
R24
0
R28
0
R29
0
R30
D3
150V
33V
D4
VREG
EN
OV
OV
GND
Figure 3-1. LM74930Q1EVM: Evaluation Module Schematic
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3.2 PCB Layouts
Figure 3-2 and Figure 3-3show component placement of the EVAL board.Figure 3-4 through Figure 3-7 show
PCB layout images.
Figure 3-2. LM74930Q1EVM Board Top Overlay Figure 3-3. LM74930Q1EVM Board Bottom Overlay
Figure 3-4. LM74930Q1EVM Board Top Layer Figure 3-5. LM74930Q1EVM Board Bottom Layer
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Figure 3-6. LM74930Q1EVM Board Inner Layer 1 Figure 3-7. LM74930Q1EVM Board Inner Layer 2
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3.3 Bill of Materials (BOM)
Section 3.3 lists the EVM BOM.
Table 3-1. LM74930Q1EVM
Designator Quantity Value Description PackageReference PartNumber Manufacturer
!PCB1 1 Printed Circuit Board LM74930Q1EVM Any
C1 1 0.1uF CAP, CERM, 0.1 uF, 25 V, +/- 10%, X7R,
AEC-Q200 Grade 1, 0603 0603 CGA3E2X7R1E104K080AA TDK
C2, C16 2 0.1uF CAP, CERM, 0.1 µF, 100 V,+/- 10%, X8L,
AEC-Q200 Grade 0, 0603 0603 GCJ188L8EL104KA07D MuRata
C3 1 3300 pF CAP, CERM, 3300 pF, 25 V, +/- 10%, X7R,
0603 0603 GCJ188R71E332KA01D MuRata
C4 1 0.01uF CAP, CERM, 0.01 uF, 50 V, +/- 10%, X7R,
0603 0603 GCM188R71H103KA37D MuRata
C5 1 2.2uF CAP, CERM, 2.2 uF, 100 V, +/- 10%, X7R,
1210 1210 C1210C225K1RACTU Kemet
C6 1 0.01uF CAP, CERM, 0.01 uF, 100 V, +/- 10%, X7R,
AEC-Q200 Grade 1, 0603 0603 CGA3E2X7R2A103K080AA TDK
C9 1 0.01uF CAP, CERM, 0.01 uF, 50 V, +/- 5%, C0G/
NP0, 0603 0603 GRM1885C1H103JA01D MuRata
C10 1 100uF CAP, AL, 100 uF, 63 V, +/- 20%, AEC-Q200
Grade 2, TH
TH, 2-Leads, Body
10x12.5mm, Pin Spacing 5
mm
ELXZ630ELL101MJC5S Chemi-Con
C12 1 0.047uF CAP, CERM, 0.047 uF, 100 V, +/- 10%, X7S,
AEC-Q200 Grade 1, 0603 0603 CGA3E3X7S2A473K080AB TDK
C13 1 0.022uF CAP, CERM, 0.022 uF, 25 V, +/- 10%, X7R,
0603 0603 C0603C223K3RACTU Kemet
C17 1 2.2uF CAP, CERM, 2.2 µF, 25 V,+/- 10%, X7R,
AEC-Q200 Grade 1, 0805 0805 GCM21BR71E225KA73L MuRata
C18 1 1uF CAP, CERM, 1 uF, 100 V, +/- 10%, X7R,
AEC-Q200 Grade 1, 1206 1206 GCM31CR72A105KA03 MuRata
D3 1 150 V Diode, TVS, Uni, 150 V, 243 Vc, SMB SMB SMBJ150A-13-F Diodes Inc.
D4 1 33 V Diode, TVS, Bi, 33 V, SMB SMB SMBJ33CA-13-F Diodes Inc.
D5 1 Green LED, Green, SMD 1.6x0.8x0.8mm LTST-C190GKT Lite-On
D6 1 Red LED, Red, SMD Red 0805 LED LTST-C170KRKT Lite-On
D7 1 56 V Diode, Zener, 56 V, 500 mW, AEC-Q101,
SOD-123 SOD-123 MMSZ5263BT1G ON Semiconductor
D8, D9 2 75 V Diode, Switching, 75 V, 0.15 A, AEC-Q101,
SOD-323 SOD-323 1N4148WS-7-F Diodes Inc.
D10 1 4.7V Diode, Zener, 4.7 V, 300 mW, SOD-323 SOD-323 MM3Z4V7ST1G ON Semiconductor
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Table 3-1. LM74930Q1EVM (continued)
Designator Quantity Value Description PackageReference PartNumber Manufacturer
H1, H2, H3, H4 4 Machine Screw, Round, #4-40 x 1/4, Nylon,
Philips panhead Screw NY PMS 440 0025 PH B&F Fastener Supply
H5, H6, H7, H8 4 Standoff, Hex, 0.5"L #4-40 Nylon Standoff 1902C Keystone
J1, J2, J3, J4, J9 5 Standard Banana Jack, Uninsulated, 8.9mm Keystone575-8 575-8 Keystone
J5, J6, J8, J13, J14 5 Header, 100mil, 3x1, Tin, TH Header, 3 PIN, 100mil, Tin PEC03SAAN Sullins Connector Solutions
J7 1 Header, 100mil, 2x1, Tin, TH Header, 2 PIN, 100mil, Tin PEC02SAAN Sullins Connector Solutions
J10, J11 2 Header, 100mil, 3x2, Tin, TH 3x2 Header PEC03DAAN Sullins Connector Solutions
J12 1 Header, 100mil, 2x2, Tin, TH Header, 2x2, 2.54mm, TH PEC02DAAN Sullins Connector Solutions
Q3 1 200V MOSFET, N-CH, 200 V, 34 A, DDPAK DDPAK IPB320N20N3 G Infineon Technologies
Q4 1
MOSFET N-Channel 60 V 16A (Ta), 104A
(Tc) 3.1W (Ta), 136W (Tc) Surface Mount,
Wettable Flank 8-PDFNU (5x6)
PDFN56U TQM050NB06CR RLG Taiwan Semiconductor
Q5 1 160 V Transistor, NPN, 160 V, 0.3 A, SOT-23 SOT-23 PMBT5551,215 Nexperia
R2 1 0.001 RES, 0.001, 1%, 1 W, 1206 1206 WSLP12061L000FEA Vishay-Dale
R3, R4 2 50 RES, 50, 1%, 0.1 W, AEC-Q200 Grade 0,
0603 0603 CRCW060350R0FKEA Vishay-Dale
R5 1 12k RES, 12 k, 5%, 0.1 W, AEC-Q200 Grade 0,
0603 0603 CRCW060312K0JNEA Vishay-Dale
R6 1 100 RES, 100, 5%, 0.1 W, AEC-Q200 Grade 0,
0603 0603 CRCW0603100RJNEA Vishay-Dale
R8, R9, R25, R26 4 0 RES, 0, 5%, 0.1 W, AEC-Q200 Grade 0,
0603 0603 ERJ-3GEY0R00V Panasonic
R10, R15, R17, R20 4 100k RES, 100 k, 1%, 0.1 W, AEC-Q200 Grade 0,
0603 0603 CRCW0603100KFKEA Vishay-Dale
R11, R12, R23 3 10.0k RES, 10.0 k, 1%, 0.1 W, AEC-Q200 Grade
0, 0603 0603 RMCF0603FT10K0 Stackpole Electronics Inc
R13 1 10k RES, 10 k, 5%, 0.25 W, 1206 1206 CRCW120610K0JNEA Vishay-Dale
R14 1 1.65k RES, 1.65 k, 1%, 0.1 W, AEC-Q200 Grade
0, 0603 0603 CRCW06031K65FKEA Vishay-Dale
R16 1 11.5k RES, 11.5 k, 1%, 0.1 W, AEC-Q200 Grade 0,
0603 0603 CRCW060311K5FKEA Vishay-Dale
R18 1 0 RES, 0, 5%, 0.1 W, 0603 0603 ERJ-3GEY0R00V Panasonic
R19 1 150k RES, 150 k, 1%, 0.1 W, 0603 0603 CRCW0603150KFKEA Vishay-Dale
R21 1 36.0k RES, 36.0 k, 1%, 0.1 W, 0603 0603 RC0603FR-0736KL Yageo
R22 1 24.0k RES, 24.0 k, 1%, 0.1 W, 0603 0603 RC0603FR-0724KL Yageo
R27 1 20.0k RES, 20.0 k, 1%, 0.125 W, AEC-Q200
Grade 0, 0805 0805 ERJ-6ENF2002V Panasonic
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Table 3-1. LM74930Q1EVM (continued)
Designator Quantity Value Description PackageReference PartNumber Manufacturer
R29, R30 2 0 RES, 0, 5%, 0.063 W, 0402 0402 MCR01MZPJ000 Rohm
SH1, SH2, SH3,
SH4, SH5, SH6,
SH7, SH8, SH9
9 1x2 Shunt, 100mil, Gold plated, Black Shunt SNT-100-BK-G Samtec
TP1, TP2, TP3, TP4 4 TEST POINT SLOTTED .118", TH Test point, TH Slot Test point 1040 Keystone
TP5, TP6, TP7,
TP8, TP9, TP10,
TP11, TP12, TP13,
TP15, TP16
11 Test Point, Miniature, Orange, TH Orange Miniature Testpoint 5003 Keystone
TP14 1 Test Point, Miniature, Black, TH Black Miniature Testpoint 5001 Keystone
U1 1
Ideal Diode Surge Stopper with Circuit
breaker, overvoltage protection and fault
output
VQFN24 LM74930QRGEQ1 Texas Instruments
C7 0 330 pF CAP, CERM, 330 pF, 50 V, +/- 10%, X7R,
0402 0402 GRM155R71H331KA01D MuRata
C8 0 1uF CAP, CERM, 1 uF, 100 V, +/- 10%, X7R,
AEC-Q200 Grade 1, 1206 1206 GCM31CR72A105KA03 MuRata
C11 0 220uF CAP, AL, 220 uF, 63 V, +/- 20%, 0.16 ohm,
AEC-Q200 Grade 2, SMD SMT Radial H13 EEV-FK1J221Q Panasonic
D1 0 33 V Diode, TVS, Bi, 33 V, SMB SMB SMBJ33CA-13-F Diodes Inc.
D2 0 70 V Diode, Schottky, 70 V, 1 A, SMA SMA B170-13-F Diodes Inc.
FID1, FID2, FID3,
FID4, FID5, FID6 0Fiducial mark. There is nothing to buy or mount. N/A N/A N/A
L2 0 1uH Inductor, Shielded, Composite, 1 uH, 43.5 A,
0.001 ohm, SMD Inductor, 11.3x10x10mm XAL1010-102MEB Coilcraft
Q1 0 200 V MOSFET, N-CH, 200 V, 34 A, DDPAK DDPAK IPB320N20N3 G Infineon Technologies
Q2 0
MOSFET N-Channel 60 V 16 A (Ta), 104 A
(Tc) 3.1W (Ta), 136 W (Tc) Surface Mount,
Wettable Flank 8-PDFNU (5x6)
PDFN56U TQM050NB06CR RLG Taiwan Semiconductor
R1 0 0.001 RES, 0.001, 1%, 1 W, 1206 1206 WSLP12061L000FEA Vishay-Dale
R7 0 200 RES, 200, 5%, 0.25 W, AEC-Q200 Grade 0,
1206 1206 CRCW1206200RJNEA Vishay-Dale
R24, R28 0 0 RES, 0, 5%, 0.063 W, 0402 0402 MCR01MZPJ000 Rohm
Hardware Design Files www.ti.com
16 LM74930-Q1 Evaluation Module for Ideal Diode Controller SLUUCW6 – NOVEMBER 2023
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Copyright © 2023 Texas Instruments Incorporated

4 Additional Information
Trademarks
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www.ti.com Additional Information
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LM74930-Q1 Evaluation Module for Ideal Diode Controller 17
Copyright © 2023 Texas Instruments Incorporated

STANDARD TERMS FOR EVALUATION MODULES
1. Delivery: TI delivers TI evaluation boards, kits, or modules, including any accompanying demonstration software, components, and/or
documentation which may be provided together or separately (collectively, an “EVM” or “EVMs”) to the User (“User”) in accordance
with the terms set forth herein. User's acceptance of the EVM is expressly subject to the following terms.
1.1 EVMs are intended solely for product or software developers for use in a research and development setting to facilitate feasibility
evaluation, experimentation, or scientific analysis of TI semiconductors products. EVMs have no direct function and are not
finished products. EVMs shall not be directly or indirectly assembled as a part or subassembly in any finished product. For
clarification, any software or software tools provided with the EVM (“Software”) shall not be subject to the terms and conditions
set forth herein but rather shall be subject to the applicable terms that accompany such Software
1.2 EVMs are not intended for consumer or household use. EVMs may not be sold, sublicensed, leased, rented, loaned, assigned,
or otherwise distributed for commercial purposes by Users, in whole or in part, or used in any finished product or production
system.
2Limited Warranty and Related Remedies/Disclaimers:
2.1 These terms do not apply to Software. The warranty, if any, for Software is covered in the applicable Software License
Agreement.
2.2 TI warrants that the TI EVM will conform to TI's published specifications for ninety (90) days after the date TI delivers such EVM
to User. Notwithstanding the foregoing, TI shall not be liable for a nonconforming EVM if (a) the nonconformity was caused by
neglect, misuse or mistreatment by an entity other than TI, including improper installation or testing, or for any EVMs that have
been altered or modified in any way by an entity other than TI, (b) the nonconformity resulted from User's design, specifications
or instructions for such EVMs or improper system design, or (c) User has not paid on time. Testing and other quality control
techniques are used to the extent TI deems necessary. TI does not test all parameters of each EVM.
User's claims against TI under this Section 2 are void if User fails to notify TI of any apparent defects in the EVMs within ten (10)
business days after delivery, or of any hidden defects with ten (10) business days after the defect has been detected.
2.3 TI's sole liability shall be at its option to repair or replace EVMs that fail to conform to the warranty set forth above, or credit
User's account for such EVM. TI's liability under this warranty shall be limited to EVMs that are returned during the warranty
period to the address designated by TI and that are determined by TI not to conform to such warranty. If TI elects to repair or
replace such EVM, TI shall have a reasonable time to repair such EVM or provide replacements. Repaired EVMs shall be
warranted for the remainder of the original warranty period. Replaced EVMs shall be warranted for a new full ninety (90) day
warranty period.
WARNING
Evaluation Kits are intended solely for use by technically qualified,
professional electronics experts who are familiar with the dangers
and application risks associated with handling electrical mechanical
components, systems, and subsystems.
User shall operate the Evaluation Kit within TI’s recommended
guidelines and any applicable legal or environmental requirements
as well as reasonable and customary safeguards. Failure to set up
and/or operate the Evaluation Kit within TI’s recommended
guidelines may result in personal injury or death or property
damage. Proper set up entails following TI’s instructions for
electrical ratings of interface circuits such as input, output and
electrical loads.
NOTE:
EXPOSURE TO ELECTROSTATIC DISCHARGE (ESD) MAY CAUSE DEGREDATION OR FAILURE OF THE EVALUATION
KIT; TI RECOMMENDS STORAGE OF THE EVALUATION KIT IN A PROTECTIVE ESD BAG.

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2
3Regulatory Notices:
3.1 United States
3.1.1 Notice applicable to EVMs not FCC-Approved:
FCC NOTICE: This kit is designed to allow product developers to evaluate electronic components, circuitry, or software
associated with the kit to determine whether to incorporate such items in a finished product and software developers to write
software applications for use with the end product. This kit is not a finished product and when assembled may not be resold or
otherwise marketed unless all required FCC equipment authorizations are first obtained. Operation is subject to the condition
that this product not cause harmful interference to licensed radio stations and that this product accept harmful interference.
Unless the assembled kit is designed to operate under part 15, part 18 or part 95 of this chapter, the operator of the kit must
operate under the authority of an FCC license holder or must secure an experimental authorization under part 5 of this chapter.
3.1.2 For EVMs annotated as FCC – FEDERAL COMMUNICATIONS COMMISSION Part 15 Compliant:
CAUTION
This device complies with part 15 of the FCC Rules. Operation is subject to the following two conditions: (1) This device may not
cause harmful interference, and (2) this device must accept any interference received, including interference that may cause
undesired operation.
Changes or modifications not expressly approved by the party responsible for compliance could void the user's authority to
operate the equipment.
FCC Interference Statement for Class A EVM devices
NOTE: This equipment has been tested and found to comply with the limits for a Class A digital device, pursuant to part 15 of
the FCC Rules. These limits are designed to provide reasonable protection against harmful interference when the equipment is
operated in a commercial environment. This equipment generates, uses, and can radiate radio frequency energy and, if not
installed and used in accordance with the instruction manual, may cause harmful interference to radio communications.
Operation of this equipment in a residential area is likely to cause harmful interference in which case the user will be required to
correct the interference at his own expense.
FCC Interference Statement for Class B EVM devices
NOTE: This equipment has been tested and found to comply with the limits for a Class B digital device, pursuant to part 15 of
the FCC Rules. These limits are designed to provide reasonable protection against harmful interference in a residential
installation. This equipment generates, uses and can radiate radio frequency energy and, if not installed and used in accordance
with the instructions, may cause harmful interference to radio communications. However, there is no guarantee that interference
will not occur in a particular installation. If this equipment does cause harmful interference to radio or television reception, which
can be determined by turning the equipment off and on, the user is encouraged to try to correct the interference by one or more
of the following measures:
•Reorient or relocate the receiving antenna.
•Increase the separation between the equipment and receiver.
•Connect the equipment into an outlet on a circuit different from that to which the receiver is connected.
•Consult the dealer or an experienced radio/TV technician for help.
3.2 Canada
3.2.1 For EVMs issued with an Industry Canada Certificate of Conformance to RSS-210 or RSS-247
Concerning EVMs Including Radio Transmitters:
This device complies with Industry Canada license-exempt RSSs. Operation is subject to the following two conditions:
(1) this device may not cause interference, and (2) this device must accept any interference, including interference that may
cause undesired operation of the device.
Concernant les EVMs avec appareils radio:
Le présent appareil est conforme aux CNR d'Industrie Canada applicables aux appareils radio exempts de licence. L'exploitation
est autorisée aux deux conditions suivantes: (1) l'appareil ne doit pas produire de brouillage, et (2) l'utilisateur de l'appareil doit
accepter tout brouillage radioélectrique subi, même si le brouillage est susceptible d'en compromettre le fonctionnement.
Concerning EVMs Including Detachable Antennas:
Under Industry Canada regulations, this radio transmitter may only operate using an antenna of a type and maximum (or lesser)
gain approved for the transmitter by Industry Canada. To reduce potential radio interference to other users, the antenna type
and its gain should be so chosen that the equivalent isotropically radiated power (e.i.r.p.) is not more than that necessary for
successful communication. This radio transmitter has been approved by Industry Canada to operate with the antenna types
listed in the user guide with the maximum permissible gain and required antenna impedance for each antenna type indicated.
Antenna types not included in this list, having a gain greater than the maximum gain indicated for that type, are strictly prohibited
for use with this device.

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3
Concernant les EVMs avec antennes détachables
Conformément à la réglementation d'Industrie Canada, le présent émetteur radio peut fonctionner avec une antenne d'un type et
d'un gain maximal (ou inférieur) approuvé pour l'émetteur par Industrie Canada. Dans le but de réduire les risques de brouillage
radioélectrique à l'intention des autres utilisateurs, il faut choisir le type d'antenne et son gain de sorte que la puissance isotrope
rayonnée équivalente (p.i.r.e.) ne dépasse pas l'intensité nécessaire à l'établissement d'une communication satisfaisante. Le
présent émetteur radio a été approuvé par Industrie Canada pour fonctionner avec les types d'antenne énumérés dans le
manuel d’usage et ayant un gain admissible maximal et l'impédance requise pour chaque type d'antenne. Les types d'antenne
non inclus dans cette liste, ou dont le gain est supérieur au gain maximal indiqué, sont strictement interdits pour l'exploitation de
l'émetteur
3.3 Japan
3.3.1 Notice for EVMs delivered in Japan: Please see http://www.tij.co.jp/lsds/ti_ja/general/eStore/notice_01.page 日本国内に
輸入される評価用キット、ボードについては、次のところをご覧ください。
https://www.ti.com/ja-jp/legal/notice-for-evaluation-kits-delivered-in-japan.html
3.3.2 Notice for Users of EVMs Considered “Radio Frequency Products” in Japan: EVMs entering Japan may not be certified
by TI as conforming to Technical Regulations of Radio Law of Japan.
If User uses EVMs in Japan, not certified to Technical Regulations of Radio Law of Japan, User is required to follow the
instructions set forth by Radio Law of Japan, which includes, but is not limited to, the instructions below with respect to EVMs
(which for the avoidance of doubt are stated strictly for convenience and should be verified by User):
1. Use EVMs in a shielded room or any other test facility as defined in the notification #173 issued by Ministry of Internal
Affairs and Communications on March 28, 2006, based on Sub-section 1.1 of Article 6 of the Ministry’s Rule for
Enforcement of Radio Law of Japan,
2. Use EVMs only after User obtains the license of Test Radio Station as provided in Radio Law of Japan with respect to
EVMs, or
3. Use of EVMs only after User obtains the Technical Regulations Conformity Certification as provided in Radio Law of Japan
with respect to EVMs. Also, do not transfer EVMs, unless User gives the same notice above to the transferee. Please note
that if User does not follow the instructions above, User will be subject to penalties of Radio Law of Japan.
【無線電波を送信する製品の開発キットをお使いになる際の注意事項】 開発キットの中には技術基準適合証明を受けて
いないものがあります。 技術適合証明を受けていないもののご使用に際しては、電波法遵守のため、以下のいずれかの
措置を取っていただく必要がありますのでご注意ください。
1. 電波法施行規則第6条第1項第1号に基づく平成18年3月28日総務省告示第173号で定められた電波暗室等の試験設備でご使用
いただく。
2. 実験局の免許を取得後ご使用いただく。
3. 技術基準適合証明を取得後ご使用いただく。
なお、本製品は、上記の「ご使用にあたっての注意」を譲渡先、移転先に通知しない限り、譲渡、移転できないものとします。
上記を遵守頂けない場合は、電波法の罰則が適用される可能性があることをご留意ください。 日本テキサス・イ
ンスツルメンツ株式会社
東京都新宿区西新宿６丁目２４番１号
西新宿三井ビル
3.3.3 Notice for EVMs for Power Line Communication: Please see http://www.tij.co.jp/lsds/ti_ja/general/eStore/notice_02.page
電力線搬送波通信についての開発キットをお使いになる際の注意事項については、次のところをご覧くださ
い。https://www.ti.com/ja-jp/legal/notice-for-evaluation-kits-for-power-line-communication.html
3.4 European Union
3.4.1 For EVMs subject to EU Directive 2014/30/EU (Electromagnetic Compatibility Directive):
This is a class A product intended for use in environments other than domestic environments that are connected to a
low-voltage power-supply network that supplies buildings used for domestic purposes. In a domestic environment this
product may cause radio interference in which case the user may be required to take adequate measures.