Texas Instruments LMG3410-HB-EVM User manual

WARNING
1
SNOU140A–April 2016–Revised May 2017
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Using the LMG3410-HB-EVM Half-Bridge and LMG34XX-BB-EVM Breakout
Board EVM General TI High Voltage Evaluation User Safety Guidelines
Preface
SNOU140A–April 2016–Revised May 2017
Using the LMG3410-HB-EVM Half-Bridge and LMG34XX-
BB-EVM Breakout Board EVM
General TI High Voltage Evaluation User Safety Guidelines
Always follow TI’s set-up and application instructions, including use of all interface components within their
recommended electrical rated voltage and power limits. Always use electrical safety precautions to help
ensure your personal safety and the safety of those working around you. Contact TI’s Product Information
Center http://support/ti./com for further information.
Save all warnings and instructions for future reference.
Failure to follow warnings and instructions may result in personal injury, property damage, or
death due to electrical shock and/or burn hazards.
The term TI HV EVM refers to an electronic device typically provided as an open framed, unenclosed
printed circuit board assembly. It is intended strictly for use in development laboratory environments,
solely for qualified professional users having training, expertise, and knowledge of electrical safety risks in
development and application of high-voltage electrical circuits. Any other use and/or application are strictly
prohibited by Texas Instruments. If you are not suitably qualified, you should immediately stop from further
use of the HV EVM.
•Work Area Safety:
– Maintain a clean and orderly work area .
– Qualified observer(s) must be present anytime circuits are energized.
– Effective barriers and signage must be present in the area where the TI HV EVM and its interface
electronics are energized, indicating operation of accessible high voltages may be present, for the
purpose of protecting inadvertent access.
– All interface circuits, power supplies, evaluation modules, instruments, meters, scopes and other
related apparatus used in a development environment exceeding 50 VRMS/75 VDC must be
electrically located within a protected Emergency Power Off (EPO) protected power strip.
– Use a stable and non-conductive work surface.
– Use adequately insulated clamps and wires to attach measurement probes and instruments. No
freehand testing whenever possible.
•Electrical Safety:
As a precautionary measure, it is always a good engineering practice to assume that the entire
EVM may have fully accessible and active high voltages.
– De-energize the TI HV EVM and all its inputs, outputs, and electrical loads before performing any
electrical or other diagnostic measurements. Confirm that TI HV EVM power has been safely de-
energized.
– With the EVM confirmed de-energized, proceed with required electrical circuit configurations, wiring,
measurement equipment hook-ups and other application needs, while still assuming the EVM circuit
and measuring instruments are electrically live.
– When EVM readiness is complete, energize the EVM as intended.

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Using the LMG3410-HB-EVM Half-Bridge and LMG34XX-BB-EVM Breakout
Board EVM General TI High Voltage Evaluation User Safety Guidelines
WARNING: While the EVM is energized, never touch the EVM or its electrical circuits as they
could be at high voltages capable of causing electrical shock hazard.
•Personal Safety:
– Wear personal protective equipment, for example, latex gloves and/or safety glasses with side
shields or protect EVM in an adequate lucent plastic box with interlocks from accidental touch.
•Limitation for Safe Use:
– EVMs are not to be used as all or part of a production unit.
Safety and Precautions
The EVM is designed for professionals who have received the appropriate technical training, and is
designed to operate from an AC power supply or a high-voltage DC supply. Please read this user guide
and the safety-related documents that come with the EVM package before operating this EVM.
CAUTION
Do not leave the EVM powered when unattended.
WARNING
Hot surface! Contact may cause burns. Do not touch!
WARNING
High Voltage! Electric shock is possible when connecting board to
live wire. Board should be handled with care by a professional.
For safety, use of isolated test equipment with overvoltage and
overcurrent protection is highly recommended.

3
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Using the LMG3410-HB-EVM Half-Bridge and LMG34XX-BB-EVM Breakout
Board EVM
User's Guide
SNOU140A–April 2016–Revised May 2017
Using the LMG3410-HB-EVM Half-Bridge and LMG34XX-
BB-EVM Breakout Board EVM
The LMG3410-HB-EVM features two LMG3410 600V/12A GaN power transistors with integrated drivers
that are configured in a half bridge with all the required bias circuit and logic/power level shifting. Essential
power stage and gate driving high frequency current loops are fully enclosed on the board to minimize
parasitic inductances, reducing voltage overshoots and improving performance. The LMG3410-HB-EVM is
configured to have a socket style external connection for easy interface with external power stages to run
the LMG3410 in various applications.
Contents
1 Description.................................................................................................................... 4
2 Schematic..................................................................................................................... 8
3 Test Setup................................................................................................................... 11
4 Test Procedure ............................................................................................................. 14
5 Typical Characteristics..................................................................................................... 15
6 EVM Assembly Drawing and PCB Layout .............................................................................. 17
7 Bill of Materials ............................................................................................................. 18
List of Figures
1 Simplified LMG3410-HB-EVM Schematic................................................................................ 5
2 Front and Back Side Photos of LMG3410-HB-EVM ................................................................... 6
3 LMG3410-HB-EVM Schematic............................................................................................. 8
4 Recommended Footprint for LMG3410-HB-EVM........................................................................ 9
5 LMG34XX-BB-EVM Schematic .......................................................................................... 10
6 LMG3410-HB-EVM Connected with LMG34XX-BB-EVM ............................................................ 11
7 Recommended Connection Points....................................................................................... 12
8 Recommended Probe Connection for Logic Signals.................................................................. 15
9 Recommended Probe Connection for High Voltage Switch Node................................................... 15
10 Recommended Configuration for Heatsink and Fan................................................................... 15
11 Switching Waveforms with 480V input, 100kHz, 30% duty cycle, 6A output....................................... 15
12 Low to High Transition Waveform with 480V input, 100kHz, 30% duty cycle, 6A output ........................ 15
13 High to Low Transition Waveform with 480V input, 100kHz, 30% duty cycle, 6A output ........................ 15
14 LMG3410-HB-EVM Top Layer and Components...................................................................... 17
15 LMG3410-HB-EVM Inner Copper Layer 1.............................................................................. 17
16 LMG3410-HB-EVM Inner Copper Layer 2.............................................................................. 17
17 LMG3410-HB-EVM Bottom Layer and Components .................................................................. 17
18 LMG34XX-BB-EVM Top Layer and Components...................................................................... 17
19 LMG34XX-BB-EVM Bottom Layer and Components.................................................................. 17
List of Tables
1 Logic Pin Function Description............................................................................................. 4
2 Power Pin Function Description ........................................................................................... 4
3 Test Point Functional Description........................................................................................ 13
4 List of Terminals............................................................................................................ 13

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5 LMG3410-HB-EVM List of Materials..................................................................................... 18
6 LMG34XX-BB-EVM List of Materials .................................................................................... 19
Trademarks
All trademarks are the property of their respective owners.
1 Description
The LMG3410-HB-EVM operates as a daughter card as part of a larger custom designed system or with
the LMG34XX-BB-EVM breakout motherboard.
1.1 LMG3410-HB-EVM
The LMG3410-HB-EVM configures two LMG3410 GaN FETs in a half bridge. All the bias and level shifting
components are included, allowing low side referenced signals to control both FETs. High frequency
bypass capacitors are included on the power stage in an optimized layout to minimize parasitic inductance
and reduce voltage overshoot.
There are 6 logic pins on the FET card
Table 1. Logic Pin Function Description
Pin Description
AGND Logic and bias power ground return pin. Functionally isolated from PGND.
12V Auxiliary power input for when the LMG3410-HB-EVM is configured in bootstrap mode. Pin is not used
when configured in isolated power mode.
5V Auxiliary power input for the LMG3410-HB-EVM. Used to power logic isolators. Used as input bias power
of LMG3410 devices when configured in isolated power mode.
FAULT Logic AND output from FAULT signal from LMG3410. Pin is either pulled to AGND or 5V.
Q2 Gate AGND referenced logic gate signal input for bottom LMG3410. Compatible with both 3.3V and 5V logic.
Q1 Gate AGND referenced logic gate signal input for top LMG3410. Compatible with both 3.3V and 5V logic.
There are 3 power pins on the FET card.
Table 2. Power Pin Function Description
Pin Description
VSW Switch node of the half bridge
VDC Input DC voltage of the half bridge
PGND Power ground of the half bridge. Functionally isolated from
AGND.

VDC
PGND
VSW
Q1 Gate
Q2 Gate
FAULT LMG3410
IN
FAULT Startup
Logic
LMG3410
IN
FAULT Startup
Logic
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Figure 1. Simplified LMG3410-HB-EVM Schematic
CAUTION
High-voltage levels are present on the evaluation module whenever it is
energized. Proper precautions must be taken when working with the EVM.
1.1.1 FAULT
The FAULT pin of LMG3410-HB-EVM is active low when an under voltage lockout on an auxiliary voltage
rail, over temperature or overcurrent even occurs on the LMG3410. The FAULT signal for both LMG3410
devices are level shifted to AGND, where they are logic AND connected to the FAULT pin.
CAUTION
Please do NOT ignore FAULT signal when using LMG3410-HB-EVM. Turn off
both top and bottom devices, if any device is generating FAULT signal. The
device under fault condition may operate in undesired 3rd-quadrant mode and
may be over heated and damaged due to the high source-drain voltage drop if
the other device is still switching.
1.1.2 Power Pins
While there are some power stage bypass capacitors on the LMG3410-HB-EVM from VDC to PGND to
minimize voltage overshoot during switching, more bulk capacitance is required to hold up the DC voltage
during operation. It is highly recommended to minimize, and ideally prevent, any overlap and parasitic
capacitance from VSW to VDC, PGND and any logic pins. The two grounds PGND and AGND are
functionally isolated from each other on the LMG3410-HB-EVM.

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1.1.3 Bootstrap Mode
The LMG3410-HB-EVM card can be modified to operate in bootstrap mode, where the 12V bias voltage is
used to power both LMG3410 devices. This can be achieved by removing U3, U4 and R2, and placing a
20 Ωresistor on R1, a 0 Ωresistor on R18 and a 600V SOD-123 diode on D1, such as Micro Commercial
Components UFM15PL-TP. Do NOT power up the LMG3410-HB-EVM when R1, R2, R18, D1, U3 and U4
are all populated.
1.1.4 Heatsink
Heatsink is installed to help with heat dissipation of the LMG3410. Exposed copper pads that are attached
to the die attach pad (DAP) of both the high and low side devices are provided for a low thermal
impedance point to a heatsink. The two copper pads have high voltage potential difference between them
so an electrically isolative thermal interface material (TIM) is required. Bergquist BP100-0.005-00-1112
double sided adhesive tape TIM and Cool Innovations 3-101004U heatsink are recommended.
Figure 2. Front and Back Side Photos of LMG3410-HB-EVM
1.2 LMG34XX-BB-EVM
To allow for quick operation the LMG34XX-BB-EVM is available to interface with the LMG3410-HB-EVM.
This mother board is designed to operate the LMG3410 as a synchronous open loop buck converter. Easy
probe locations are provided for measurement of logic and power stage voltages.
1.2.1 Bias Supply
The motherboard requires one 12V bias supply. A linear drop off regulator steps the voltage down to a
tightly regulated 5V for logic and auxiliary power of the LMG3410 when the LMG3410-HB-EVM is
configured in isolated power mode. When the LMG3410-HB-EVM is configured in bootstrap mode the 12V
input is used to power the two LMG3410 devices.
1.2.2 Logic PWM Input
The LMG34XX-BB-EVM supports a single PWM, with complimentary signal and corresponding dead time
generated on board. A 0 V to 5 V magnitude input square wave is required. The complementary PWM
generation circuit creates 50 ns of dead time between both transitions of the PWM signals.

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1.2.3 Fault Protection
There is an option to disable PWM input to the FET card in the event of a fault signal from the LMG3410-
HB-EVM. When the FAULT Protect jumper is placed in the EN mode PWM is disabled when either
LMG3410 has an active fault. This disable is not latching, so when the fault clears PWM immediately
resumes. If FAULT Protect mode is not desired it can be disabled by placing the jumper in the DIS
position. The FAULT LED will still illuminate when either LMG3410 has an active fault, regardless of the
position of FAULT Protect jumper.
1.3 Typical Applications
The LMG3410-HB-EVM is designed for use in AC/DC, DC/DC and DC/AC applications
• Totem-Pole PFC converters
• Phase-Shifted Full Bridge or LLC Converter
• Buck converter such as the LMG34XX-BB-EVM
1.4 Features
The LMG3410-HB-EVM has the following features and specifications:
• Two options to bias the LMG3410, isolated power or from bootstrap diode
• Over temperature, overcurrent, and under voltage lockout protection with FAULT indication that is level
shifted to an AGND referenced signal
• Gate logic input support of either 3.3V or 5V logic
• Maximum recommended operating voltage of 480V and absolute maximum voltage of 600V
The LMG34XX-BB-EVM has the following features and specifications:
• Requires only a single 12V bias supply
• Requires only a single 0V to 5V PWM input to generate gate drive signal
• PWM disable in the event of a fault from the LMG3410-HB-EVM
• Maximum recommended operating voltage of 480V and absolute maximum voltage of 600V
• Maximum recommended operating inductor current of 8A

ISO_RET_H
Top_FET
Bot_FET
AGND
AGND
AGND
ISO_RET_L
ISO_12V_L
0.01μF
1206
630V
C10
0.01μF
1206
630V
C29
0.01μF
1206
630V
C12
0.01μF
1206
630V
C13
5V
GaN_Fault
20
R1
DNP
ISO_RET_L
5V_H
5V_L
ISO_RET_L
ISO_RET_H
VM12V_H
ISO_RET_H
ISO_RET_L
ISO_12V_L
VM12V_L
ISO_RET_L
IN_L
5V
AGND
5V
AGND
12V 12V
0
R18
DNP
Aux Connector
Power Connector
HVBUS
ISO_RET_H
HVBUS
D1
UFM15PL-TP
DNP
68pF
C2
68pF
C17
AGND
ISO_RET_L
0
R2
ISO_12V_H
AGND
ISONC1
ISONC2
ISONC3
1
23
Q3
MGSF1N02LT1G
ISO_RET_L
68pF
C6
68pF
C11
ISO_RET_L
100k
R9
10.0k
R7
5V_H
10.0k
R8
5V_L
SW_L
L2
BRC2518T220K
FAULT_L
ISO_RET_L
0.22μF
C7
5V_L
ISO_RET_L
ISO_RET_H
0.22μF
C5
5V_H
ISO_RET_H
L1
BRC2518T220K
SW_H
ISO_RET_H
FAULT_H
IN_H
VCC1
1
GND1
2
INA
3
INB
4
OUTC
5
NC
6
EN1
7
GND1
8GND2 9
EN2 10
NC 11
INC 12
OUTB 13
OUTA 14
GND2 15
VCC2 16
U1
ISO7831FDWR
VCC1
1
GND1
2
INA
3
INB
4
OUTC
5
NC
6
EN1
7
GND1
8GND2 9
EN2 10
NC 11
INC 12
OUTB 13
OUTA 14
GND2 15
VCC2 16
U2
ISO7831FDWR
2.2uF
C9
2.2uF
C26
0.1μF
C14
0.1μF
C15
49.9
R4 22pF
C4
49.9
R12 22pF
C19
5V
AGND
D4
MBR0520LT1G
D8
MBR0520LT1G
16V
D6
MMSZ4703T1G
5V
AGND
D2
MBR0520LT1G
D7
MBR0520LT1G
16V
D5
MMSZ4703T1G
49.9
R11
49.9
R3
0.1μF
C25 0.1μF
C22
ISONC4
4.7 Fμ
C27 4.7μF
C24
10μF
C23
4.7μF
C21
4.7μF
C30
4.7μF
C20
4.7μF
C28
4.7μF
C31 4.7μF
C32
ISO_12V_L
ISO_RET_L
ISO_RET_H
ISO_12V_H
ISO_12V_L_B
ISO_RET_L_B
ISO_12V_H_B
ISO_RET_H_B
1
2 34
L3
1
2 34
L4
2
4
1
53
U5
SN74AHC1G08DBVR
5V
47μF
C8
5
4
1
2
3
6
J1
90121-0766
15k 100V/ns
15k 100v/ns
17.8k 100V/ns
15k
R5
40.2k 50V/ns
17.8k
R6
68.1k 50V/ns
AGND
0.1μF
C3
0.1μF
C18
1 Fμ
C1
1
25
6
4 3
475μH
T2
1
25
6
4 3
475μH
T1
D1 1
D2 3
VCC
2
GND 4
EN
5
CLK
6
U3
SN6505BDBVR
D1 1
D2 3
VCC
2
GND 4
EN
5
CLK
6
U4
SN6505BDBVR
DRAIN 1
DRAIN 2
DRAIN 3
DRAIN 4
DRAIN 5
DRAIN 6
DRAIN 7
DRAIN 8
DRAIN 9
DRAIN 10
DRAIN 11
SOURCE 12
SOURCE 13
SOURCE 14
SOURCE 15
SOURCE 16
NC
17
SOURCE 18
SOURCE 19
SOURCE 20
SOURCE 21
SOURCE 22
SOURCE 23
GND 24
LDO5V
25
VNEG
26
VDD
27
BBSW
28
LPM
29
RDRV
30
IN
31
FAULT
32
PAD 33
Q1
LMG3410RWHT
DRAIN 1
DRAIN 2
DRAIN 3
DRAIN 4
DRAIN 5
DRAIN 6
DRAIN 7
DRAIN 8
DRAIN 9
DRAIN 10
DRAIN 11
SOURCE 12
SOURCE 13
SOURCE 14
SOURCE 15
SOURCE 16
NC
17
SOURCE 18
SOURCE 19
SOURCE 20
SOURCE 21
SOURCE 22
SOURCE 23
GND 24
LDO5V
25
VNEG
26
VDD
27
BBSW
28
LPM
29
RDRV
30
IN
31
FAULT
32
PAD 33
Q2
LMG3410RWHT
1 Fμ
C16
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2 Schematic
Figure 3. LMG3410-HB-EVM Schematic

www.ti.com Schematic
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Figure 4. Recommended Footprint for LMG3410-HB-EVM

AGND
1
2 3 4 5
J3
112404
AGND
1 6
5
2
U1A
SN74LVC2G14DCKR
1µF
C9
AGND
5V
39pF
C13
D2
BAT54WS-7-F
AGND
AGND
HDEAD1
PWM
1µF
C11 5V
3 4
5
2
U3B
SN74LVC2G14DCKR
39pF
C5
D1
BAT54WS-7-F
AGND
AGND
5V
LDEAD1
1µF
C4 5V
AGND
1.20k
R1
1.20k
R5
HVIN
PGND1
Vin
HVOUT
PGND2
Vout
LOW
HIGH
FAULT
1000pF
C14
AGND
PGND
1µF
C6
1
2
7
48
U2A
SN74LVC2G08IDCTRQ1
5
6
3
48
U2B
SN74LVC2G08IDCTRQ1
5V
AGND
5V
5V
5V
12V aux
FAULT Indicator
SW1 PGND3
AGND
0
R9
1
2
J6
282834-2
5µF
C1
5µF
C15
HIGH
LOW
PGND
PGND
PGND PGND
39pF
C7
0
R2
AGND
0
R4
39pF
C12
AGND
39pF
C10
AGND
0
R3 VDC
PGND
SW
AGND
5V
1 6
5
2
U3A
SN74LVC2G14DCKR
0.1µF
630V
C3
0.1µF
630V
C2
0.1µF
630V
C17
0.1µF
630V
C16
1µF
C18
AGND
1µF
C20
LOW_2
HIGH_2
HIGH_2
LOW_2
5
4
1
2
3
6
J4
TSW-106-07-G-S
1µF
C8
VAUX
ACMGND
1
2
3
4
5
6
J2
0448120024
AGND1
AGND4
5V
AGND
3 4
5
2
U1B
SN74LVC2G14DCKR
AGND3
0
R23
0
R21
IN
1OUT 3
GND 2 TAB
4
U4
LM2940IMP-5.0/NOPB 33µF
C19
10µF
C21
12V
12V
12V
Green
1
2
D4
Red
1
2
D3
1.6k
R6
1.6k
R8
30k
R10
30k
R16
30k
R11
30k
R17
30k
R18
30k
R12
30k
R13
30k
R19
30k
R20
30k
R14
1
2
3
J7
TSW-103-07-G-S
5V
Red
1
2
D5
PGND
SH-J1
1
2
J5
282841-2
1
2
J1
282841-2
1
2
3
4
47µH
L3
DRQ73-470-R
TI HV Synchronous Buck Motherboard
150µH
L1
150µH
L2
10.0k
R7
5V
AGND
AGND
AGND
AGND2
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Figure 5. LMG34XX-BB-EVM Schematic

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3 Test Setup
3.1 Test Equipment
DC Voltage Source: Capable of supplying the input of the EVM up to 480 V
DC Bias Source: Capable of 12 V output at up to 0.7 A
Function Generator: Capable of 0 V to 5 V square wave output with adjustable duty cycle and frequency in
desired operating range. It is recommended to operate the LMG3410-HB-EVM and LMG34XX-BB-EVM
with a switching frequency between 50 kHz to 200 kHz.
Oscilloscope: Capable of at least 200 MHz operation. A 1 GHz or greater oscilloscope and probes with
short ground springs are recommended for accurate measurements.
DC Multimeter(s): Capable of 600 V measurement, suitable for determining operation and efficiency (if
desired).
DC Load: Capable of 600 V operation at up to 8 A in current-mode operation.
Fan: 200 LFM minimum airflow is recommended
3.2 Recommended Test Setup
The LMG3410-HB-EVM connects to the LMG34XX-BB-EVM as Figure 6 shows.
Figure 6. LMG3410-HB-EVM Connected with LMG34XX-BB-EVM
The LMG34XX-BB-EVM power and probe connection points are shown in Figure 7.

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Figure 7. Recommended Connection Points
PCB Notes:
• Probe points for gate drive logic
• 100 mil header for PWM input, PWM signals to LMG3410-HB-EVM and FAULT output
• BNC connector for PWM input
• 12V bias supply input
• FAULT Protection option header
• Power stage high voltage input
• Probe point for power stage switch node
• Power stage high voltage output
WARNING
There are very high voltages present on the EVM. Some
components reach temperatures above 50°C. Precautions must be
taken when handling the board.
3.3 List of Test Points
Key test points on this EVM have been designed for use with oscilloscope probes with short ground
springs. Using the short ground spring instead of the alligator ground lead will minimize measurement
error and produce a cleaner signal with the fast switching GaN devices used on this EVM. The data
shown in this user guide has been obtained using such a measurement method.

www.ti.com Test Setup
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Table 3. Test Point Functional Description
NAME DESCRIPTION
VAUX 12 V bias input connection before filter
ACMGND Ground for 12 V bias input before filter
5V 5 V bias
AGND1 Analog ground for logic
PWM Single input PWM signal
LDEAD1 Low side PWM signal before dead time generation
AGND3 Analog ground for logic
HDEAD1 High side PWM signal before dead time generation
AGND4 Analog ground for logic
LOW Low side PWM signal with dead time
HIGH High side PWM signal with dead time
AGND2 Analog ground for logic
12V 12 V bias after filter
PGND1 Power ground
HVIN DC input voltage
PGND2 Power ground
HVOUT DC output voltage
PGND3 Power ground
SW1 Switch node voltage
3.4 List of Terminals
Table 4. List of Terminals
TERMINAL NAME DESCRIPTION
J1 VIN Input DC voltage input
J5 VOUT Output DC voltage output
J6 12V AUX 12 V bias voltage input
J3 PWM INPUT Single 0 V to 5 V PWM input for gate
J4 LOGIC Header to connect PWM, FAULT logic
J2 HB Card PIN Connector to interface LMG3410-HB-EVM
board

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4 Test Procedure
4.1 Setup
The following procedure is recommended to set up the LMG34XX-BB-EVM with the LMG3410-HB-EVM:
• Connect LMG3410-HB-EVM to LMG34XX-BB-EVM
• Connect oscilloscope or multimeter probes to desired test points as shown in A or G
• Connect the 12 V bias supply, load to the output, and input supply to the input
• Connect the function generator to either the BNC connector PWM input at C or 100 mil header
connector input at pin 6 (PWM) and pin 5 (GND) at B.
• Enable an external fan to direct airflow across the heatsink attached to the LMG3410-HB-EVM
4.2 Startup and Operating Procedure
The following procedure is recommended to enable the LMG34XX-BB-EVM with the LMG3410-HB-EVM:
1. Power up the 12 V bias supply. Ensure the top right green “Aux Enable” LED is illuminated.
2. Enable PWM on the function generator
3. Power up high voltage input supply. Ensure the red “HV Enable” LED is illuminated when the input
supply is above 20 V.
WARNING
Do NOT turn on device at absolute maximum voltage. It is
recommended to start at voltages at or below 480 V, and then
increase the input voltage slowly while monitoring VSW to insure the
peak voltage does not exceed the absolute maximum rating of 600
V.
4.3 Shutdown Procedure
1. Turn off input supply then PWM. Wait until red “HV Enable” LED turns off.
2. Disable 12 V bias supply
4.4 Additional Operation Notes
• Fault protection on the LMG34XX-BB-EVM is not latching, so if a fault clears and the LMG34XX-BB-
EVM is still operational PWM will resume.

www.ti.com Typical Characteristics
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5 Typical Characteristics
Figure 8. Recommended Probe Connection for Logic
Signals Figure 9. Recommended Probe Connection for High
Voltage Switch Node

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Figure 10. Recommended Configuration for Heatsink and
Fan
Figure 11. Switching Waveforms with 480V input, 100kHz,
30% duty cycle, 6A output
Figure 12. Low to High Transition Waveform with 480V
input, 100kHz, 30% duty cycle, 6A output Figure 13. High to Low Transition Waveform with 480V input, 100kHz, 30% duty cycle, 6A output

www.ti.com EVM Assembly Drawing and PCB Layout
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6 EVM Assembly Drawing and PCB Layout
Figure 14. LMG3410-HB-EVM Top Layer and Components
Figure 15. LMG3410-HB-EVM Inner Copper Layer 1
Figure 16. LMG3410-HB-EVM Inner Copper Layer 2 Figure 17. LMG3410-HB-EVM Bottom Layer and
Components
Figure 18. LMG34XX-BB-EVM Top Layer and Components Figure 19. LMG34XX-BB-EVM Bottom Layer and
Components

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7 Bill of Materials
Table 5. LMG3410-HB-EVM List of Materials
Qty Designator Description Part Number Manufacturer
2 C1, C16 CAP, CERM, 1 µF, 16 V, +/- 10%, X5R,
0402 EMK105BJ105KVHF Taiyo Yuden
4 C2, C6, C11, C17 CAP, CERM, 68 pF, 50 V, +/- 5%,
C0G/NP0, 0402 GRM1555C1H680JA01D MuRata
4 C3, C18, C22, C25 CAP, CERM, 0.1 µF, 50 V, +/- 10%, X7R,
0402 C1005X7R1H104K050BB TDK
2 C4, C19 CAP, CERM, 22 pF, 50 V, +/- 5%,
C0G/NP0, 0402 C1005C0G1H220J050BA TDK
2 C5, C7 CAP, CERM, 0.22 µF, 50 V, +/- 10%, X7R,
0603 C1608X7R1H224K080AB TDK
1 C8 CAP, CERM, 47 µF, 25 V, +/- 20%, X5R,
1206_190 C3216X5R1E476M160AC TDK
2 C9, C26 CAP, CERM, 2.2uF, 25V, +/-10%, X7R,
0805 GRM21BR71E225KA73L MuRata
4 C10, C12, C13, C29 CAP, CERM, 0.01uF, 630V, +/-10%, X7R,
1206 GRM31BR72J103KW01L MuRata
2 C14, C15 CAP, CERM, 0.1 µF, 1000 V, +/- 10%, X7R,
1812 C1812W104KDRACTU Kemet
6 C20, C21, C28, C30,
C31, C32 CAP, CERM, 4.7 µF, 35 V, +/- 10%, X5R, 0603 GRM188R6YA475KE15D MuRata
1 C23 CAP, CERM, 10 µF, 25 V, +/- 10%, X7R,
1206_190 C1206C106K3RACTU Kemet
2 C24, C27 CAP, CERM, 4.7 µF, 16 V, +/- 10%, X7R,
AEC-Q200 Grade 1, 0805 GCM21BR71C475KA73K MuRata
4 D2, D4, D7, D8 Diode, Schottky, 20 V, 0.5 A, SOD-123 MBR0520LT1G ON Semiconductor
2 D5, D6 Diode, Zener, 16 V, 500 mW, SOD-123 MMSZ4703T1G ON Semiconductor
1 HS1 'Cool Innovations Heat sink 1.00''x1.00'' 3-101004U Cool Innovations
1 J1 Header, 2.54mm, 6x1, Gold, R/A, TH 90121-0766 Molex
2 L1, L2 Inductor, Wirewound, 22 µH, 0.49 A, 0.56
ohm, SMD BRC2518T220K Taiyo Yuden
2 L3, L4 Coupled inductor, 0.2 A, 0.45 ohm, SMD ACM2520-601-2P-T002 TDK
2 Q1, Q2 600-V 12-A Single Channel GaN Power
Stage, RWH0032A (VQFN-32) LMG3410RWHT Texas Instruments
1 Q3 MOSFET, N-CH, 20 V, 0.75 A, SOT-23 MGSF1N02LT1G ON Semiconductor
1 R2 RES, 0, 5%, 0.1 W, 0603 CRCW06030000Z0EA Vishay-Dale
4 R3, R4, R11, R12 RES, 49.9, 1%, 0.063 W, 0402 RC0402FR-0749R9L Yageo America
1 R5 RES, 15 k, 5%, 0.063 W, 0402 CRCW040215K0JNED Vishay-Dale
1 R6 RES, 17.8 k, 1%, 0.063 W, 0402 CRCW040217K8FKED Vishay-Dale
2 R7, R8 RES, 10.0 k, 1%, 0.1 W, 0402 ERJ-2RKF1002X Panasonic
1 R9 RES, 100 k, 1%, 0.063 W, 0402 RC1005F104CS Samsung Electro-
Mechanics
2 T1, T2 Transformer, 475uH, SMT 760390014 Wurth Elektronik
1 TIM1 'Bergquist double sided thermal tape 'TI-Bond Ply100
0.005"/.127mm(1).cu-
27.0mm by 27.0mm
Bergquist
3 TP1, TP2, TP3 Edge-Mount Pin, Gold 3620-1-32-15-00-00-08-0 Mill-Max
2 U1, U2 High-Performance, 8000 VPK Reinforced
Triple Digital Isolator, DW0016B ISO7831FDWR Texas Instruments
2 U3, U4 Low-Noise 1 A, 420 kHz Transformer Driver,
DBV0006A (SOT-6) SN6505BDBVR Texas Instruments
1 U5 Single 2-Input Positive-AND Gate,
DBV0005A SN74AHC1G08DBVR Texas Instruments

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Table 6. LMG34XX-BB-EVM List of Materials
Qty Designator Description Part Number Manufacturer
5 5V, 12V, HVIN, HVOUT,
VAUX Test Point, Compact, Red, TH 5005 Keystone
5 ACMGND, AGND1,
AGND2, PGND1, PGND2 Test Point, Compact, Black, TH 5006 Keystone
2 C1, C15 CAP, Film, 5 µF, 1000 V, +/- 5%, 0.016
ohm, TH MKP1848S55010JP2C Vishay-Components
4 C2, C3, C16, C17 CAP, CERM, 0.1uF, 630V, +/-10%, X7R,
1812 GRM43DR72J104KW01L MuRata
5 C4, C6, C8, C9, C11 CAP, CERM, 1 µF, 25 V, +/- 10%, X7R,
0603 C1608X7R1E105K080AB TDK
2 C5, C13 CAP, CERM, 39 pF, 50 V, +/- 5%,
C0G/NP0, 0603 C1608C0G1H390J TDK
1 C14 CAP, CERM, 1000 pF, 25 V, +/- 5%,
C0G/NP0, 0603 GRM1885C1E102JA01D MuRata
2 C18, C20 CAP, CERM, 1 µF, 25 V, +/- 10%, X7R,
0603 GRM188R71E105KA12D MuRata
1 C19 CAP, TA, 33 µF, 16 V, +/- 10%, 0.35
ohm, SMD TPSB336K016R0350 AVX
1 C21 CAP, CERM, 10 µF, 25 V, +/- 10%, X5R,
0805 GRM219R61E106KA12D MuRata
2 D1, D2 Diode, Schottky, 30 V, 0.2 A, SOD-323 BAT54WS-7-F Diodes Inc.
2 D3, D5 LED, Red, SMD LS L29K-G1J2-1-Z OSRAM
1 D4 LED, Green, SMD LG L29K-G2J1-24-Z OSRAM
6 H1, H2, H3, H4, H9, H10 Machine Screw, Round, #4-40 x 1/4,
Nylon, Philips panhead NY PMS 440 0025 PH B and F Fastener Supply
6 H5, H6, H7, H8, H11, H12 Standoff, Hex, 0.5"L #4-40 Nylon 1902C Keystone
2 J1, J5 Terminal Block, 2x1, 5.08mm, TH 282841-2 TE Connectivity
1 J2 Receptacle, 2.54mm, 6x1, Gold, TH 448120024 Molex
1 J3 Connector, TH, BNC 112404 Amphenol Connex
1 J4 Header, 100mil, 6x1, Gold, TH TSW-106-07-G-S Samtec
1 J6 Terminal Block, 2x1, 2.54mm, TH 282834-2 TE Connectivity
1 J7 Header, 100mil, 3x1, Gold, TH TSW-103-07-G-S Samtec
2 L1, L2 Inductor, Toroid, 150 µH, 7.5 A, 0.05
ohm, TH 2300HT-151-H-RC Bourns
1 L3 Coupled inductor, 47 µH, 1.14 A, 0.241
ohm, +/- 20%, SMD DRQ73-470-R Cooper Bussman
3 PGND, SW, VDC Pin Receptacle, .032-.046" .075" Dia,
Gold, TH 0312-0-15-15-34-27-10-0 Mill-Max
2 R1, R5 RES, 1.20 k, 1%, 0.1 W, 0603 RC0603FR-071K2L Yageo America
6 R2, R3, R4, R9, R21, R23 RES, 0, 5%, 0.1 W, 0603 CRCW06030000Z0EA Vishay-Dale
2 R6, R8 RES, 1.6 k, 5%, 0.1 W, 0603 CRCW06031K60JNEA Vishay-Dale
1 R7 RES, 10.0 k, 1%, 0.1 W, 0603 ERJ-3EKF1002V Panasonic
10 R10, R11, R12, R13, R14,
R16, R17, R18, R19, R20 RES, 30 k, 5%, 0.25 W, 1206 CRCW120630K0JNEA Vishay-Dale
1 SH-J1 Shunt, 100mil, Gold plated, Black 969102-0000-DA 3M
2 U1, U3 Dual Schmitt-Trigger Inverter, DCK0006A SN74LVC2G14DCKR Texas Instruments
1 U2 DUAL 2-INPUT POSITIVE-AND GATE,
DCT0008A SN74LVC2G08IDCTRQ1 Texas Instruments
1 U4 1A Low Dropout Regulator, 4-pin SOT-
223, Pb-Free LM2940IMP-5.0/NOPB Texas Instruments

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Revision History
Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Original (April 2016) to A Revision .......................................................................................................... Page
• Changed Figure 1, Updated Fault connection in schematics ....................................................................... 4
• Changed Section 1.1.1, Updated Fault connection description .................................................................... 5
• Changed Section 1.1.4, Updated Heatsink description .............................................................................. 6
• Changed Figure 2, Updated Front and Back Side Photos of LMG3410-HB-EVM................................................ 6
• Changed Figure 3 and 4 ................................................................................................................. 8
• Changed figures 14, 15, 16 and 17 ................................................................................................... 17
• Changed Table 5, Updated LMG3410-HB-EVM List of Materials................................................................. 18