Transcend TS4/8GUSDHC6-P3 User manual

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Description
Transcend High Capacity microSD Card series are
specifically designed to meet the High Capacity, High
Definition Audio and Video requirement for the latest
Digital Cameras, DV Recorders, Mobile Phones, etc.
The new defined Speed Class enables the host to
support AV applications to perform real time
recording to the microSD memory card.
Placement
Front Back
Features
•RoHS compliant product.
•Operating Voltage: 2.7 ~ 3.6V
•Operating Temperature: -25 ~ 85°C
•Durability: 10,000 insertion/removal cycles
•Compatible with SD Specification Ver. 2.0
•Comply with SD File System Specification Ver. 2.0
•Mechanical Write Protection Switch with microSD adapter
•Supports Speed Class Specification Class 6
•Supports Copy Protection for Recorded Media (CPRM)
for SD-Audio
1 2 3 4 5 6 7 8
•Seamless compatibility with SDMI-compliant digital audio
devices
•Form Factor: 11mm x 15mm x 1mm
Pin Definition
SD Mode SPI Mode
Pin No.
Name Type Description Name Type Description
1 DAT2 I/O/PP Data Line [Bit2] RSV Reserved
2 CD/DAT3 I/O/PP Card Detect / Data Line [Bit3] CS I Chip Select
3 CMD PP Command / Response DI I Data In
4 VDD S Supply voltage VDD S Supply voltage
5 CLK I Clock SCLK I Clock
6 VSS S Supply voltage ground VSS S Supply voltage ground
7 DAT0 I/O/PP Data Line [Bit0] DO O/PP Data out
8 DAT1 I/O/PP Data Line [Bit1] RSV Reserved
S: Power Supply; I:Input; O:Output; PP:Push-Pull

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Architecture

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Bus Operating Conditions
• General
Parameter Symbol Min. Max. Unit Remark
Peak voltage on all lines -0.3 VDD+0.3 V
All Inputs
Input Leakage Current -10 10 µA
All Outputs
Output Leakage Current -10 10 µA
• Power Supply Voltage
Parameter Symbol Min. Max. Unit Remark
Supply voltage VDD 2.7 3.6 V
Output High Voltage VOH 0.75* VDD V IOH=-100uA@VDD Min.
Output Low Voltage VOL 0.125* VDD V IOL=100uA@VDD Min.
Input High Voltage VIH 0.625* VDD VDD+0.3 V
Input Low Voltage VIL VSS-0.3 0.25* VDD V
Power up time 250 ms From 0v to VDD Min.
• Current Consumption
The current consumption is measured by averaging over 1 second.
‧Before first command: Maximum 15 mA
‧During initialization: Maximum 100 mA
‧Operation in Default Mode: Maximum 100 mA
‧Operation in High Speed Mode: Maximum 200 mA
‧Operation with other functions: Maximum 500 mA.
• Bus Signal Line Load
The total capacitance CLthe CLK line of the SD Memory Card bus is the sum of the bus master capacitance CHOST, the bus
capacitance CBUS itself and the capacitance CCARD of each card connected to this line:
CL= CHOST + CBUS + Ν*CCARD
Where N is the number of connected cards.
Parameter Symbol Min. Max. Unit Remark
Pull-up resistance RCMD
RDAT
10 100 kΩTo prevent bus floating
Bus signal line capacitance CL40 pF 1 card
CHOST+CBUS shall not exceed
30 pF

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Single card capacitance CCARD 10 pF
Maximum signal line inductance 16 nH fPP ≤ 20 MHz
Pull-up resistance inside card (pin1) RDAT3 10 90 kΩMay be used for card
detection
Note that the total capacitance of CMD and DAT lines will be consist of CHOST, CBUS and one CCARD only because they are
connected separately to the SD Memory Card host.
Host should consider total bus capacitance for each signal as the sum of CHOST, CBUS, and CCARD, these parameters are
defined by per signal. The host can determine CHOST and CBUS so that total bus capacitance is less than the card estimated
capacitance load (CL=40 pF). The SD Memory Card guarantees its bus timing when total bus capacitance is less than
maximum value of CL(40 pF).

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• Bus Signal Levels
As the bus can be supplied with a variable supply voltage, all signal levels are related to the supply voltage.
To meet the requirements of the JEDEC specification JESD8-1A and JESD8-7, the card input and output voltages shall be
within the following specified ranges for any VDD of the allowed voltage range:
Parameter Symbol Min. Max. Unit Remark
Output HIGH voltage VOH 0.75*VDD V IOH = -100 μA @VDD min
Output LOW voltage VOL 0.125*VDD V IOL = -100 μA @VDD min
Input HIGH voltage VIH 0.625*VDD VDD + 0.3 V
Input LOW voltage VIL VSS – 0.3 0.25*VDD V

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• Bus Timing
Parameter Symbol Min Max. Unit Remark
Clock CLK (All values are referred to min (VIH) and max (VIL)
Clock frequency Data Transfer Mode fPP 0 25 MHz CCARD ≤ 10 pF, (1 card)
Clock frequency Identification Mode fOD 0(1)/100 400 KHz CCARD ≤ 10 pF, (1 card)
Clock low time tWL 10 ns CCARD ≤ 10 pF, (1 card)
Clock high time tWH 10 ns CCARD ≤ 10 pF, (1 card)
Clock rise time tTLH 10 ns CCARD ≤ 10 pF, (1 card)
Clock fall time tTHL 10 ns CCARD ≤ 10 pF, (1 card)
Inputs CMD, DAT (referenced to CLK)
Input set-up time tISU 5 ns CCARD ≤ 10 pF, (1 card)
Input hold time tIH 5 ns CCARD ≤ 10 pF, (1 card)
Outputs CMD, DAT (referenced to CLK)

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Output Delay time during Data Transfer Mode tODLY 0 14 ns CL≤ 40 pF, (1 card)
Output Delay time during Identification Mode tODLY 0 50 ns CL≤ 40 pF, (1 card)
(1) 0 Hz means to stop the clock. The given minimum frequency range is for cases were continues clock is required

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• Bus Timing (High Speed Mode)
Parameter Symbol Min Max. Unit Remark
Clock CLK (All values are referred to min (VIH) and max (VIL)
Clock frequency Data Transfer Mode fPP 0 50 MHz CCARD ≤ 10 pF, (1 card)
Clock low time tWL 7 ns CCARD ≤ 10 pF, (1 card)
Clock high time tWH 7 ns CCARD ≤ 10 pF, (1 card)
Clock rise time tTLH 3 ns CCARD ≤ 10 pF, (1 card)
Clock fall time tTHL 3 ns CCARD ≤ 10 pF, (1 card)
Inputs CMD, DAT (referenced to CLK)
Input set-up time tISU 6 ns CCARD ≤ 10 pF, (1 card)
Input hold time tIH 2 ns CCARD ≤ 10 pF, (1 card)
Outputs CMD, DAT (referenced to CLK)

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Output Delay time during Data Transfer Mode tODLY 14 ns CL≤ 40 pF, (1 card)
Output Hold time tOH 2.5 ns CL≤ 40 pF, (1 card)
Total System capacitance for each line1CL40 pF (1 card)
1) In order to satisfy severe timing, host shall drive only one card.

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Reliability and Durability
Temperature Operation: -25°C / 85°C
Storage: -40°C (168h) / 85°C (500h)
Junction temperature: max. 95°C
Moisture and corrosion Operation: 25°C / 95% rel. humidity
Storage: 40°C / 93% rel. hum./500h
Salt Water Spray: 3% NaCl/35C; 24h acc. MIL STD Method 1009
Durability 10.000 mating cycles; test procedure: tbd.
Bending 10N
Torque 0.15N.m or +/-2.5 deg
Drop test 1.5m free fall
UV light exposure UV: 254nm, 15Ws/cm² according to ISO 7816-1
X-ray exposure 0.1 Gy of medium-energy radiation (70 keV to 140 keV, cumulative dose per year)
to both sides of the card, according to ISO7816-1.
Visual inspection
Shape and form
No warp page; no mold skin; complete form; no cavities surface smoothness <=
-0.1 mm/cm² within contour; no cracks; no pollution (fat, oil dust, etc.)
Minimum moving force of WP witch 40gf (Ensures that the WP switch will not slide while it is inserted to the connector.)
WP Switch cycles minimum 1000 Cycles(@Slide force 0.4N to 5N)

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Register Information
Within the card interface six registers are defined: OCR, CID, CSD, RCA, DSR and SCR. These can be accessed only
by corresponding commands (see Chapter 4.7). The OCR, CID, CSD and SCR registers carry the card/content specific
information, while the RCA and DSR registers are configuration registers storing actual configuration parameters.
1. OCR register
The 32-bit operation conditions register stores the VDD voltage profile of the card. Additionally, this register
includes status information bits. One status bit is set if the card power up procedure has been finished. This register
includes another status bit indicating the card capacity status after set power up status bit. The OCR register shall be
implemented by the cards. The 32-bit operation conditions register stores the VDD voltage profile of the card. Bit 7 of
OCR is newly defined for Dual Voltage Card and set to 0 in default. If a Dual Voltage Card does not receive CMD8, OCR
bit 7 in the response indicates 0, and the Dual Voltage Card which received CMD8, sets this bit to 1.
Additionally, this register includes 2 more status information bits. Bit 31 - Card power up status bit, this status bit is
set if the card power up procedure has been finished. Bit 30 - Card capacity status bit, this status bit is set to 1 if card is
High Capacity SD Memory Card. 0 indicates that the card is Standard Capacity SD Memory Card. The Card Capacity
status bit is valid after the card power up procedure is completed and the card power up status bit is set to 1. The Host
shall read this status bit to identify a Standard or High Capacity SD Memory Card.
The OCR register shall be implemented by the cards.
OCR Register Definition

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1) This bit is valid only when the card power up status bit is set.
2) This bit is set to LOW if the card has not finished the power up routine.
The supported voltage range is coded as shown in Table 5-1. A voltage range is not supported if the
corresponding bit value is set to LOW. As long as the card is busy, the corresponding bit (31) is set to
LOW.
2. CID Register
The Card IDentification (CID) register is 128 bits wide. It contains the card identification information used during the card
identification phase. Every individual flash card shall have a unique identification number. The structure of the CID
register is defined in the following paragraphs:
• MID
An 8-bit binary number that identifies the card manufacturer. The MID number is controlled, defined,
and allocated to a SD Memory Card manufacturer by the SD-3C, LLC. This procedure is established to
ensure uniqueness of the CID register.
• OID
A 2-character ASCII string that identifies the card OEM and/or the card contents (when used as a
distribution media either on ROM or FLASH cards). The OID number is controlled, defined, and allocated
to a SD Memory Card manufacturer by the SD-3C, LLC. This procedure is established to ensure
uniqueness of the CID register.
Note: SD-3C, LLC licenses companies that wish to manufacture and/or sell SD Memory Cards, including but not limited to flash memory,
ROM, OTP, RAM, and SDIO Combo Cards.
SD-3C, LLC is a limited liability company established by Matsushita Electric Industrial Co. Ltd., SanDisk Corporation and Toshiba
Corporation.
• PNM
The product name is a string, 5 ASCII characters long.
• PRV

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The product revision is composed of two Binary Coded Decimal (BCD) digits, four bits each, representing an “n.m”
revision number. The “n” is the most significant nibble and “m” is the least significant nibble.
As an example, the PRV binary value field for product revision “6.2” will be: 0110 0010
• PSN
The Serial Number is 32 bits of binary number.
• MDT
The manufacturing date composed of two hexadecimal digits, one is 8 bit representing the year(y)
and the other is four bits representing the month(m).
The “m” field [11:8] is the month code. 1 = January.
The “y” field [19:12] is the year code. 0 = 2000.
As an example, the binary value of the Date field for production date “April 2001” will be:
00000001 0100.
• CRC
CRC7 checksum (7 bits).
3. CSD Register
Table 5-16 shows Definition of the CSD for the High Capacity SD Memory Card (CSD Version 2.0). The following
sections describe the CSD fields and the relevant data types for the High Capacity SD Memory Card.
CSD Version 2.0 is applied to only the High Capacity SD Memory Card. The field name in parenthesis is set to fixed
value and indicates that the host is not necessary to refer these fields. The fixed values enables host, which refers to
these fields, to keep compatibility to CSD Version 1.0. The Cell Type field is coded as follows: R = readable, W(1) =
writable once, W = multiple writable.

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The CSD Register Fields (CSD Version 2.0)
The following sections describe the CSD fields and the relevant data types. If not explicitly defined otherwise, all bit
strings are interpreted as binary coded numbers starting with the left bit first.
• CSD_STRUCTURE
Field structures of the CSD register are different depend on the Physical Specification Version and Card
Capacity.
The CSD_STRUCTURE field in the CSD register indicates its structure version.
The following table shows the version number of the related CSD structure.

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CSD Register Structure
• TAAC
This field is fixed to 0Eh, which indicates 1 ms. The host should not use TAAC, NSAC, and R2W_FACTOR to calculate
timeout and should uses fixed timeout values for read and write operations (See 4.6.2).
• NSAC
This field is fixed to 00h. NSAC should not be used to calculate time-out values.
• TRAN_SPEED
The following table defines the maximum data transfer rate per one data line - TRAN_SPEED:

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Note that for current SD Memory Cards that field must be always 0_0110_010b (032h) which is equal to 25MHz - the
mandatory maximum operating frequency of SD Memory Card.
In High-Speed mode, that field must be always 0_1011_010b (05Ah) which is equal to 50MHz. And when the timing
mode returns to the default by CMD6 or CMD0 command, its value will be 032h.
• CCC
The SD Memory Card command set is divided into subsets (command classes). The card command class register CCC
defines which command classes are supported by this card. A value of ‘1’ in a CCC bit means that the corresponding
command class is supported.
• READ_BL_LEN
This field is fixed to 9h, which indicates READ_BL_LEN=512 Byte.
• READ_BL_PARTIAL
This field is fixed to 0, which indicates partial block read is inhibited and only unit of block access is allowed.
• WRITE_BLK_MISALIGN
This field is fixed to 0, which indicates write access crossing physical block boundaries is always disabled in High
Capacity SD Memory Card.
• READ_BLK_MISALIGN
This field is fixed to 0, which indicates read access crossing physical block boundaries is always
disabled in High Capacity SD Memory Card.
• DSR_IMP
Defines if the configurable driver stage is integrated on the card. If set, a driver stage register (DSR)must be
implemented also.

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• C_SIZE
This field is expanded to 22 bits and can indicate up to 2 TBytes (It is the same as the maximum memory space specified
by a 32-bit block address.)
This parameter is used to calculate the user data area capacity in the SD memory card (not include the protected area).
The user data area capacity is calculated from C_SIZE as follows: memory capacity = (C_SIZE+1) * 512K byte
As the maximum capacity of the Physical Layer Specification Version 2.00 is 32 GB, the upper 6 bits of this field shall be
set to 0.
• ERASE_BLK_EN
This field is fixed to 1, which means the host can erase one or multiple units of 512 bytes.
• SECTOR_SIZE
This field is fixed to 7Fh, which indicates 64 KBytes. This value does not relate to erase operation. Version 2.00 cards
indicates memory boundary by AU size and this field should not be used.
• WP_GRP_SIZE
This field is fixed to 00h. The High Capacity SD Memory Card does not support write protected groups.
• WP_GRP_ENABLE
This field is fixed to 0. The High Capacity SD Memory Card does not support write protected groups.
• R2W_FACTOR
This field is fixed to 2h, which indicates 4 multiples. Write timeout can be calculated by multiplying the read access time
and R2W_FACTOR. However, the host should not use this factor and should use 250 ms for write timeout
• WRITE_BL_LEN
This field is fixed to 9h, which indicates WRITE_BL_LEN=512 Byte.
• WRITE_BL_PARTIAL
This field is fixed to 0, which indicates partial block read is inhibited and only unit of block access is allowed.
• FILE_FORMAT_GRP
This field is set to 0. Host should not use this field.

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• COPY
Defines if the contents is original (= ‘0’) or has been copied (=’1’). The COPY bit for OTP and MTPdevices, sold to end
consumers, is set to ‘1’ which identifies the card contents as a copy. The COPY bit is an one time programmable bit.
• PERM_WRITE_PROTECT
Permanently protects the whole card content against overwriting or erasing (all write and erase commands for this card
are permanently disabled). The default value is ‘0’, i.e. not permanently write protected.
• TMP_WRITE_PROTECT
Temporarily protects the whole card content from being overwritten or erased (all write and erase commands for this
card are temporarily disabled). This bit can be set and reset. The default value is ‘0’, i.e. not write protected.
• FILE_FORMAT
This field is set to 0. Host should not use this field.
• CRC
The CRC field carries the check sum for the CSD contents.
The checksum has to be recalculated by the host for any CSD modification. The default corresponds to the initial CSD
contents.
The following table lists the correspondence between the CSD entries and the command classes. A ‘+’ entry indicates
that the CSD field affects the commands of the related command class.

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4. RCA Register
The writable 16-bit relative card address register carries the card address that is published by the card during the card
identification. This address is used for the addressed host-card communication after the card identification procedure.
The default value of the RCA register is 0x0000. The value0x0000 is reserved to set all cards into the Stand-by State
with CMD7.
5. DSR Register (Optional)
The 16-bit driver stage register is described in detail in Chapter 6.5. It can be optionally used to improve the bus
performance for extended operating conditions (depending on parameters like bus length, transfer rate or number of
cards). The CSD register carries the information about the DSR register usage. The default value of the DSR register is

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0x404.
6. SCR Register
In addition to the CSD register there is another configuration register that named - SD CARD Configuration Register
(SCR). SCR provides information on SD Memory Card's special features that were configured into the given card. The
size of SCR register is 64 bit. This register shall be set in the factory by the SD Memory Card manufacturer.
The following table describes the SCR register content.
• SCR_STRUCTURE
Version number of the related SCR structure in the SD Memory Card Physical Layer Specification.
SCR Register Structure Version
• SD_SPEC
Describes the SD Memory Card Physical Layer Specification version supported by this card.
SD_SPEC Physical Layer Specification Version Number
0 Version 1.0-1.01
1 Version 1.10
2 Version 2.00
3-15 reserved
Physical Layer Specification Version
• DATA_STAT_AFTER_ERASE