Xycom XVME-113 User manual

XVME-113
RAM/ROM Memory
Module
P/N 74113-001(F)
© 1998 XYCOM, INC. Printed in the United States of America
retired

Xycom Revision Record
Revision Description Date
A Manual Released 9/92
B Manual Updated (incorporated PCN 178) 11/94
C Not Released
D Manual Updated (revision level only) 11/97
E Manual Updated 2/98
F Manual Updated 7/00
Trademark Information
Brand or product names are registered trademarks of their respective owners.
Copyright Information
This document is copyrighted by Xycom Incorporated (Xycom) and shall not be reproduced or copied
without expressed written authorization from Xycom.
The information contained within this document is subject to change without notice.
Warning
This is a Class A product. In a domestic environment this product may cause radio interference in which
case the user may be required to take adequate measures.
European Union Directive 89/336/EEC requires that this apparatus comply with relevant ITE EMC
standards. EMC compliance demands that this apparatus is installed within a VME enclosure designed to
contain electromagnetic radiation and that will provide protection for the apparatus with regard to
electromagnetic immunity. This enclosure must be fully shielded. An example of such an enclosure is a
Schroff 7U EMC-RFI VME System chassis that includes a front cover to complete the enclosure.
The connection of nonshielded equipment interface cables to this equipment will invalidate EU EMC
compliance and may result in electromagnetic interference and/or susceptibility levels that violate
regulations that apply to legal operation of this device. It is the responsibility of the system integrator
and/or user to apply the following directions, as well as those in the user manual, that relate to installation
and configuration:
All interface cables should include braid/foil-type shields. Communication cable connectors must be metal
with metal backshells (ideally, zinc die-cast types), and provide 360 degree protection about the interface
wires. The cable shield braid must be terminated directly to the metal connector shell. Shield ground drain
wires alone are not adequate. VME panel mount connectors that provide interface to external cables (e.g.,
RS-232, SCSI, keyboard, mouse, etc.) must have metal housings and provide direct connection to the
metal VME chassis. Connector ground drain wires are not adequate.
Xycom Automation
750 North Maple Road
Saline, MI 48176-1292
734-429-4971
734-429-1010 (fax)

Table of Contents
2-iii
CHAPTER TITLE PAGE
1INTRODUCTION
1.1 Overview 1-1
1.2 Manual Structure 1-2
1.3 Module Operational Description 1-3
1.4 Specifications 1-4
2XVME-113 INSTALLATION
2.1 Introduction 2-1
2.2 Location of Components Relevant to Installation 2-1
2.3 Installing Memory Chips on the XVME-113 2-3
2.4 Jumper and Switch List 2-4
2.5 Jumper and Switch Descriptions 2-5
2.5.1 Bank 1 and Bank 2 Address Select 2-5
2.5.1.1 Extended/Standard Select 2-5
2.5.1.2 Bank 1 and Bank 2 Addressing Boundaries 2-9
2.5.1.3 Bank 1 Address Configuration Example 2-11
2.5.2 Address Modifier Decode 2-11
2.5.3 Memory Device Speed 2-13
2.5.4 Memory Device Type 2-14
2.5.5 Memory Device Size 2-17
2.5.6 Memory Backup Power 2-18
2.5.7 SYSRESET* Driver 2-19
2.5.8 SYSFAIL* Driver 2-20
2.5.9 Addressing of RTC/Configuration Port 2-21
2.5.9.1 RTC/Configuration Port Enable/Disable 2-21
2.5.9.2 VMEbus Options 2-21
2.5.9.3 Supervisory/Non-Privilidged Mode Selection 2-24
2.6 Installing the XVME-113 into a Cardcage 2-24
3REAL TIME CLOCK PROGRAMMING
3.1 Introduction 3-1
3.2 Real Time Clock/Readable Bank Information
Address Map 3-2
3.3 Register Map 3-3
3.4 Register Descriptions 3-5
3.5 Programming Procedures 3-9
APPENDICES
A VMEbus Connector/Pin Description
B Quick Reference Guide
C Block Diagram/Assembly Drawing/Schematics

Table of Contents
iv
FIGURE TITLE PAGE
1-1 Operational Block Diagram 1-3
2-1 Location of Jumper, Switches, Sockets and Connectors 2-1
2-2 XVME-113 Memory Map 2-5
2-3 Addressing - 4 x Chip Size 2-6
2-4 EPROM Memory Chip Pinouts 2-11
2-5 SRAM Memory Chip Pinouts 2-11
2-6 FLASH/EEPROM Memory Chip Pinouts 2-12
2-7 Notched End of the Memory Chip 2-14
TABLE TITLE PAGE
1-1 XVME-113 Memory Module Hardware Specifications 1-4
1-2 Memory Module Environmental Specifications 1-5
2-1 Switch and Jumper List 2-2
2-2 VME Base Address Select Bank 1 & 2 2-3
2-3 Memory Device Size (Bank 1 and Bank 2) 2-4
2-4 Address Modifier Switches 2-7
2-5 Memory Device Speed Switch 2-8
2-6 Memory Device Pinout Jumpers (Bank 1) 2-9
2-7 Memory Device Pinout Jumpers (Bank 2) 2-10
2-8 Jumper Configuration for each Option 2-15

Chapter 1 - INTRODUCTION
1.1 INTRODUCTION
The XVME-113 RAM/ROM Memory Module is a double-high VMEbus compatible board that can accommodate up to
12 Mbytes of RAM, 24 Mbytes of EPROM, 12 Mbytes of FLASH or 12 Mbytes of EEPROM. The module is designed with
an on-board battery backup circuit to provide power to CMOS RAM devices in the event of a power failure. A real time
clock is also added, as well as a readable port for the memory device size and type for each bank.
The XVME-113 has 24 32-pin JEDEC sockets, which are divided into two separate memory banks. Bank one contains 16
memory sites and bank two contains 8 memory sites. Each bank is designed to employ memory devices of the same type
and speed, and each bank can be independently configured (via jumpers and switches) in terms of:
·VME Address
·Address Modifier Decode
·Memory Device Speed
·Memory Device Type
·Memory Device Size
·Memory Backup Power Source
The XVME-113 RAM/ROM Memory Module has power down memory protection circuitry which prevents data from being
written to memory when the power supply voltage falls below 4.65 volts. The module also has the option of asserting
SYSRESET under this condition. Another option is to drive SYSFAIL when a low battery is detected on power up.
The XVME-113 is designed to be used with 8-, 16-, and 32-bit VMEbus processor modules. It supports read modify write
(RMW) cycles as well as unaligned transfers (UAT).

Chapter 1 – Introduction
1-2
1.2 MANUAL STRUCTURE
The purpose of Chapter One is to introduce the general specifications and functional capabilities of the XVME-113. Chapter
Two will develop the various aspects of module installation and operation. Chapter Three provides information on how to
program the Real Time Clock (RTC).
Chapter One A general description of the memory module, including functional and environmental
specifications, and VMEbus compliance information.
Chapter Two Information covering switch/jumper options, memory chip and cardcage installation procedures,
readable port bit definitions, and how to program the real time clock.
Chapter Three Focuses on programming the RTC, as well as explaining the procedures for programming the
various functions of the RTC.
Appendix A Backplane signal/pin descriptions.
Appendix B Quick reference guide of jumper and switch configurations.
Appendix C Block diagram, assembly drawing, and schematics.

XVME-113 RAM/ROM Memory Module
October 1992
2-3
1.3 MODULE OPERATIONAL DESCRIPTION
Figure 1-1 below shows an operational block diagram of the XVME-113 RAM/ROM Memory Module.
Figure 1-1. Operational Block Diagram

Chapter 1 –Introduction
1-4
1.4 SPECIFICATIONS
Table 1-1 lists the XVME-113 Memory Module's Hardware Specifications.
Table 1-1. XVME-113 Memory Module Hardware Specifications
Characteristic Specification
Maximum Memory Capacity: 1 bank of 16 sites, 1 bank of 8 sites
RAM 12 Mbytes Total
EPROM 24 Mbytes Total
FLASH 12 Mbytes Total
EEPROM 12 Mbytes Total
Device Sizes Supported:
RAM 128K by 8 up to 512K by 8
EPROM 128K by 8 up to 1024K by 8
FLASH 128K by 8 up to 512K by 8
EEPROM 128K by 8 up to 512K by 8
Device Speeds Supported: 50, 100, 150, 200 ns
Power Requirements: +5 V @ .7A typ. .9 A max.
Battery Rating: 1.9 Amp hours
Battery Life: 2.0 years typ. (using a 628128 Hitachi RAM or equivalent device)
VMEbus COMPLIANCE
Complies with VMEbus Specifications, IEEE 1014, Rev C.1
A32/A24:D32/D16/D08(EO)DTB Slave for memory banks
A16:D16/D08(EO)DTB Slave for Real Time Clock and configuration port
4 BUS GRANT INs are connected to their respective BUS GRANT OUTs
IACKIN is connected to IACKOUT
DOUBLE - 6U Form Factor
Supports RMW as well as UAT for memory banks

XVME-113 RAM/ROM Memory Module
October 1992
2-5
Table 1-2 lists the XVME-113 Memory Module's Environmental Specifications.
Table 1-2. Memory Module Environmental Specifications
Characteristic Specification
Temperature:
Operating 0°to 65°C (32°to 149°F)
Non-operating -40°to 85°C (-40°to 185°F)
Humidity: 5% to 95% RH non-condensing
(Extreme low humidity conditions may require special protection
against static discharge)
Altitude:
Operating Sea level to 10,000 ft. (3048 m)
Non-Operating Sea level to 50,000 ft. (15240 m)
Vibration:
Operating 5 to 2000 Hz
.015" peak to peak
2.5 g peak acceleration
Non-operating 5 to 2000 Hz
.030" peak to peak
5.0 g peak acceleration
Shock:
Operating 30 g peak acceleration,
11 msec duration
Non-operating 50 g peak acceleration,
11 msec duration

Chapter 1 –Introduction
1-6

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Table of contents
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