
Section 1. Specifications:
Photodetector
Operating Wavelength 1550 ± 50nm
Photodetector Type InGaAs
PD Responsivity2> 0.8mA / mW at 1550nm
PDL <0.2 dB
Return Loss >45 dB
Maximum Input Power 10 mW
RF and Monitor Outputs
RF Output Bandwidth (3dB) ≥400 MHz
Coupling AC
Lower cut-off frequency <1 MHz
Transimpedance Gain at 50Ω>18 ×103mV/mA
Conversion Gain at 50Ω>14 ×103mV/mW (1550nm)
CW Balanced Saturation Power >120 μW at 1550nm
Common Mode Rejection Ratio >25 dB (DC to 400MHz)
NEP (10 - 100MHz) <6 pW / Hz
Bandpass Ripple (150-400 MHz) ±2dB max.
RF Output Impedance 50 Ω
RF Output Voltage Linear Range >−1V to 1V at 50 Ωload
>−2V to 2V at high impedance load
RF Output Connector SMA
Monitor Output Bandwidth DC to1kHz
Monitor Output Impedance 200 Ω
Monitor Gain at High impedance30.42 ×103mV/mW
Monitor Voltage (high Z and DC input) >4V
Monitor Output Connector SMA
Power Supply
Power Supply Input Connectors 2 rows (6 pins/row) with 0.1” pitch
Power Supply ±5V / 200 mA
PSRR (power supply rejection ratio, f < 1MHz,
differential referred to output, ΔVCC = 30mV P-P) >30 dB
General
Pigtail Length 1 m
Fiber Type SMF-28e or equivalent
Operating Temperature 0 to 50 °C (Target : 0~70 °C)
Storage Temperature −40 to 85 °C
Dimensions 2.21”(L) ×1.81”(W) ×0.65”(H)
Notes: Values are referenced without connectors.
1. All specifications in this table are tested under 23± 5°C
2. Includes the coupling loss of fiber to photodiode.
3. If the output voltages for the monitor ports are equal, then the photocurrents
are equal.
Document #: GP-IN-BPD-002-OEM-11 Page 3 of 11