Panasonic MAU2111 User manual

Switching Diodes
Publication date: September 2006 SKF00070AED 1
This product complies with RoHS Directive (EU 2002/95/EC).
MAU2111
Silicon epitaxial planar type
For high speed switching circuits
Features
Optimum for high-density mounting
Short reverse recovery time trr
Small terminal capacitance Ct
Absolute Maximum Ratings Ta= 25°C
Parameter Symbol Rating Unit
Reverse voltage VR80 V
Maximum peak reverse voltage VRM 80 V
Forward current IF100 mA
Forward current (Average) IFM 225 mA
Non-repetitive peak forward surge current *IFSM 500 mA
Junction temperature Tj150 °C
Storage temperature Tstg –55 to +150 °C
Note) *: t = 1 s
Electrical Characteristics Ta= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward current VFIF= 100 mA 0.95 1.2 V
Reverse voltage VRIR= 100 mA 80 V
Reverse current IRVR= 75 V 100 nA
Terminal capacitance CtVR= 0, f = 1 MHz 0.6 2 pF
Reverse recovery time *trr
IF= 10 mA, VR= 6 V, Irr = 0.1 IR,
RL= 100 W3.0 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: trr measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s = 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i = 50 Ω
t
p = 2 µs
t
r = 0.35 ns
δ = 0.05
I
F = 10 mA
V
R = 6 V
R
L = 100 Ω
10%
Input Pulse Output Pulse
I
rr = 0.1 I R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Marking Symbol: 11
Unit: mm
1: Anode
2: Cathode USSMini2-F1 Package
0.38+0.02
−0.03
0.13+0.05
−0.02
0.2+0.05
−0.02
0.60±0.05
0.85±0.05 0.075±0.05
1.0±0.05
0.075±0.05
0 to 0.02
0.15 max.
5°
5°
2
1

MAU2111
2 SKF00070AED
This product complies with RoHS Directive (EU 2002/95/EC).
00.2 0.4 0.6 1.20.8 1.0
10−2
10−1
1
10
103
102
MAU2111_ IF - VF
Forward current IF(mA)
Forward voltage VF(V)
Ta =150°C
100°C
25°C
−20°C
020 40 60 12080 10
10−2
10−1
1
10
102
MAU2111_ IR - VR
Reverse current IR(µA)
Reverse voltage VR(V)
Ta =150°C
100°C
25°C
−40 0 40 80 200120 160
0
0.4
0.8
1.6
1.2
MAU2111_ VF - Ta
Forward voltage VF(V)
Ambient temperature Ta(°C)
IF= 100 mA
10 mA
3 mA
−40 0 40 80 200120 160
10−2
10−1
1
102
10
MAU2111_ IR - Ta
Reverse current IR(µA)
Ambient temperature Ta(°C)
VR= 75 V
35 V
1 V
020 40 60 12080 100
0
0.2
0.4
0.6
0.8
MAU2111_ Ct - VR
Terminal capacitance Ct(pF)
Reverse voltage VR(V)
f = 1 MHz
Ta =25°C
10−11 10
10−1
10
1
102
103
MAU2111_ IF(surge) - tW
Forward surge current IF(surge) (A)
Pulse width tW(ms)
tW
Non repetitive
IF(surge)
Ta =25°C
IFVFIRVRVFTa
IRTaCtVRIF(surge) tW

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semiconductors described in this book
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