
ge
a
EER
(hI
EH
Kit
SPECIFICATIONS
Semiconductors
IGSin
ao
ee
e
Transistors.
.
DIODES.
6
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eke
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we
ee
Ques
die
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aside
e
cel
es
9
ee
Amplifier
Section
15
watts
per
channel,
min.
RMS
at
8
or
4
ohms
from
40
Hertz
to
20,000
Hertz,
with
no
more
than
0.8%
total
harmonic
distortion.
Continuous
Power
Output
at
1,000
Hertz
(Both
channels
driven)
........
16
watts
per
channel
(8
ohms)
18
watts
per
channel
(4
ohms)
Harmonic
Distortion
........eeeseeeeeeeee
No
more
than
0.8%
(40
Hertz
to
20,000
Hertz)
(Continuous
Power
Output,
8
ohms)
No
more
than
0.1%
(1
watt
per
channel
Power
Output,
8
ohms)
Intermodulation
Distortion.............+65
No
more
than
0.8%
(Continuous
Power
Output,
8
ohms)
No
more
than
0.1%
(1
watt
per
channel
Power
Output,
8
ohms)
Outputs
Speaker?
a
o:ccis;
kee
Sve
Gees
cio
vance
folie:
nna
Ste
saiWielniatone
A,
B,
A+B
Headphone
.
Low
impedance
Damping
Factor
(1,000
Hertz,
8
ohms)
...........
More
than
25
Residual
Hum
&
Noise
..........0eeeeee
No
more
than
0.5mV
(8
ohms,
Pre
Power-amplifier)
Input
Sensitivity/Impedance
PHONG
ccinccGisisisiecitiersinie
selowats
cess
hers
2.5mV/50
kohms
PHONO
Overload
Level
(rms/p-p)
.
.»
100mV/280mV
MIC
.
10mV/90
kohms
AUX
..
a
..
150mV/80
kohms
TAPE:
PB)
crore
tease
cays
wiavecaiine
thas
Aiaiar
deste
ree
150mV/80
kohms
TAPE
PB
(DIN
connector)
.........eee
eee
150mV/80
kohms
Output
Level/Impedance
WARE:
REC.
a
nice
nnd
cae
sebivieis
ee
Sere
season
eae,
150mV
TAPE
REC
(DIN
connector)
...........005
30mV/80
kohms
Frequency
Response
PHONO
(RIAA
equalization)
..
30
Hertz~15,000
Hertz
+1dB
AUX)
TAREPB:
ssiisseviiceers
30
Hertz~
25,000
Hertz
+1dB
Tone
Control
BASS
jisig:
aise
Wher
sists
andiowisiesiside
was
+9dB,
—8dB
(100
Hertz)
TREBEE
ase:
swatece
sso
sre
sess
seeps
Cte
+5dB,
—7dB
(10,000
Hertz)
Loudness
Contour
(Volume
control
set
at
—40dB
position)
....
+10dB
(100
Hertz),
+5dB
(10,000
Hertz)
Hum
and
Noise
(IHF,
short-circuited,
A
Network)
PHONO
More
than
70dB
IMIG
inca
5
6
cars
Sara
wisd
sites
Bae
les
01a
f6/
wha
Sellnn
More
than
65dB
AUX,
TAP
E:PB
oiscsecaisisieveiviovs
vias
ores
oraie
le
More
than
90dB
FM
Section
Usable
Sensitivity
(IHF)
.
.
Capture
Ratio
(IHF)...
.
aisha
Selectivity:
(VHP):
Si
cov.c
was
Su8.
ecole
wes
a
Signal-to-Noise
Ratio.
©...
ee
ee
Image
Rejection
(98MHz)
.
IF
Rejection
(98MHz)
.
.
.
Spurious
Rejection
ae
re
AM
Suppression
2.2...
2.
e
eee
eee
eee
eee
ee
eee
Harmonic
Distortion;
MONO.........-.45
Less
than
0.2%
STEREO
ioc
eeu
careten
soa
Less
than
0.4%
Frequency:
Responsé
ss
3
s.ciace
some
aan
20Hz~15kHz
23:3
dB
50Hz~10kHz
78:3
dB
Stereo
Separation:
TRA
Zia
wrcscer
tg’
Seeger
enrte
More
than
40dB
SOH2z~10kKHZ
sk
ee
es
More
than
30dB
Sub
Carrier
Suppression
.
2.56
ee
ee ee
tee
wens
40dB
Antenna
dnput,...
sce
oo.
ate
se
Ce
Se
Re
ew
3002
Balanced
75Q
Unbalanced
Mating
suites
had
oe ee
agate
Sa
weet
©
weg
ON-OFF
AM
Section
Sensitivity
(IHF,
Ferrite
antenna)
(IHF,
Ext.
antenna)
.
.
15uV
Selectivity:cc.
sais.
<
4%
gam
gee
e
PH
HE
Signal-to-Noise
Ratio.
©...
eee
ee
ee
ee
Image
Rejection.
2...
cee
ee
eee
nee
IF
Rejection.
..4 sce
we
hee
ees
DLR
RTS
Tee
Miscellaneous
Power
Requirements.
5
ince
ee
ew
AC
220V
50/60Hz
Power
GonsumptiOnicc
crccis.
ed
6,0
ese
ere,
we
aS
Bey
110W
150W
(Manufactured
for
England)
DIMENSIONS:
4.4 sos
Sw
es
430
(W)
x
140
(H)
x
347(D)
mm
16-15/16
x
$-1/2
x
13-11/16
in.
Weight:
Without
Package
........--0-
8.1kg
(17
Ib
13
0z)
WithiPackage:-<
aias
cae
ack-s
eos
9.1kg
(20
Ib
10z)
Furnished
Parts
FM
T-type
Antenna
Operating
Instructions
2.066
ee
ee
ee
ee
1
Fuse:SAy
65.408
ate
em
te
es
1
Fuse
TSA)
oc
a
She
ote
1
*Measured
pursuant
to
Federal
Trade
Commission's
Trade
Regula-
tion
rule
on
Power
Output
Claims
for
Amplifiers.
NOTE:
Specifications
and
the
design
subject
to
possible
modification
with-
out
notice
due
to
improvements.
Pc
Ne
4/9