Texas Instruments BQ25616 User manual

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BQ25616, BQ25616J BMS026 Evaluation Module
User's Guide
SLUUC73–March 2020
BQ25616, BQ25616J BMS026 Evaluation Module
This user's guide provides detailed testing instructions for the BQ25616 and BQ25616J evaluation
modules (EVM). Also included are descriptions of the necessary equipment, equipment setup, and
procedures. The reference documentation also contains the printed-circuit board layouts, schematics, and
the bill of materials (BOM).
Throughout this user's guide, the abbreviations EVM,BQ25616EVM, BQ25616JEVM, BMS026, and the
term evaluation module are synonymous with the BMS026 evaluation module, unless otherwise noted.
Contents
1 Introduction ................................................................................................................... 2
1.1 EVM Features....................................................................................................... 2
1.2 I/O Descriptions..................................................................................................... 2
2 Test Summary................................................................................................................ 4
2.1 Equipment ........................................................................................................... 4
2.2 Equipment Setup.................................................................................................... 4
2.3 Test Procedure...................................................................................................... 5
3 PCB Layout Guideline....................................................................................................... 7
4 Board Layout ................................................................................................................. 8
5 Schematic ................................................................................................................... 12
6 Bill of Materials ............................................................................................................. 14
List of Figures
1 Original Test Setup for BMS026 EVM .................................................................................... 4
2 BMS026 EVM Top Overlay................................................................................................. 8
3 BMS026 EVM Top Solder Mask........................................................................................... 8
4 BMS026 EVM Top Layer .................................................................................................. 8
5 BMS026 EVM Signal Layer 1 ............................................................................................. 8
6 BMS026 EVM Signal Layer 2 ............................................................................................. 9
7 BMS026 EVM Bottom Layer .............................................................................................. 9
8 BMS026 Bottom Solder Mask ............................................................................................ 10
9 BMS026 Bottom Overlay.................................................................................................. 10
10 BQ25616EVM Schematic ................................................................................................ 12
11 BQ25616JEVM Schematic................................................................................................ 13
List of Tables
1 Device Data Sheets ......................................................................................................... 2
2 EVM I/O Connections ....................................................................................................... 2
3 EVM Jumper, Shunt and Switch Installation ............................................................................. 2
4 Recommended Operating Conditions..................................................................................... 3
5 BQ25616EVM Bill of Materials .......................................................................................... 14
6 BQ25616JEVM Bill of Materials.......................................................................................... 18
Trademarks
All trademarks are the property of their respective owners.

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1 Introduction
1.1 EVM Features
For detailed features and operation, refer to Table 1 for a list of devices and their data sheets.
Table 1. Device Data Sheets
Device Data Sheet EVM Label Variant
BQ25616 SLUSDF7 BQ25616EVM 001
BQ25616J SLUSDF7 BQ25616JEVM 002
The BMS026 evaluation module (EVM) is a complete charger module for evaluating the standalone single-
cell NVDC charger using any of the devices above.
This EVM features adjustable input current limit, charging current, and charging voltage. It also has the
abilty to test the D+/D- input source type detection, external input over-voltage protection, and simulate
battery high and low temperature conditions.
1.2 I/O Descriptions
Table 2 lists the input and output connections available on this EVM and their respective descriptions.
Table 2. EVM I/O Connections
Jack Description
J1(2) – VAC Positive rail of the charger input voltage
J1(1) – GND Ground
J2(1) – SYSTEM Positive rail of the charger system output voltage, typically connected to the
system load
J2(2) – GND Ground
J3(1) – PMID Positive rail of the charger output voltage for power bank applications in
reverse boost mode (OTG). This output also shares the rail with the VIN
input rail in forward buck mode
J3(2) – GND Ground
J4 Input source Micro B USB port
J5-BATSNS_ICHG BATSNS or ICHG pin connection
J5(3) – ICHG ICHG pin external connection
J5(2) – BATTERY Positive rail of the charger battery input, connected to the positive terminal of
the external battery
J5(1) – GND Ground
J6 USB2ANY 10-pin connector
J7 I2C 4-pin connector for the EV2300/2400 interface board
Table 3 lists the jumepr, shunt and switch installations available on this EVM and their respective
descriptions.
Table 3. EVM Jumper, Shunt and Switch Installation
Jack Description BQ25616 Setting BQ25616J Setting
JP1 VBUS additional capacitance connection Not Installed Not Installed
JP2 SYS additional capacitance connection Not Installed Not Installed
JP3 PMID additional capacitance connection Not Installed Not Installed
JP4 BAT additional capacitance connection Not Installed Not Installed
JP5 I/O Pullup rail selection. Selection will have
either BAT or SYS as the pullup rail for /CE,
STAT, OTG, and /PG pins
Short PULLUP to
SYS Short PULLUP to SYS

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Table 3. EVM Jumper, Shunt and Switch Installation (continued)
Jack Description BQ25616 Setting BQ25616J Setting
JP6 Micro B USB input D+ connection to charger
D+ pin Installed Installed
JP7 ICHG to BAT or BATTERY connection Not Installed Not Installed
JP8 ICHG resistor setting connection. Must be
connected for charging to operate correctly. Installed Installed
JP9 Micro B USB input D+ connection to charger
D+ pin Installed Installed
JP10 PSEL pin input current selection. Connect this
to HIGH on PSEL enabled chargers to select
500mA default input current limit. Connect
this to LOW on PSEL enabled chargers to
select 2.4-A default input current limit
Not Installed Not Installed
JP11 REGN connection to TS network. Must be
connected for thermistor sensing to operate
correctly.
Installed Installed
JP12 ILIM resistor setting connection. Must be
connected for ‘Unknown Adapter’ input
current limiting to operate correctly.
Installed Installed
JP13 STAT pin LED indicator connection. This
indicates the current charger Status Installed Installed
JP14 /PG pin LED indicator connection. On /PG
enabled chargers, this indicates the Power
Good status
Installed Installed
JP15 ICHG, ILIM, AGND header connection point. Not Installed Not Installed
JP16 Thermistor NORMAL temperature setting.
Connect jumper to simulate charger entering
TNORMAL (T2-T3) temperature region.
Installed Installed
JP17 /CE pin connection to ground to enable
charging. When removed, /CE pin will pull up
to disable charge
Installed Installed
JP18 Thermistor HOT temperature setting. Connect
jumper to simulate charger entering THOT
(>T5) temperature region.
Not Installed Not Installed
JP19 D- to /PG rail connection Not Installed Not Installed
JP20 OTG pin connection to ground to disable OTG
boost mode. When removed, OTG boost
mode is enabled only in battery-only
operation
Installed Installed
JP21 VSET pin setting connection. Leave floating
to set VBATREG to 4.208V. Connect to 10-
kOhm to ground to set VBATREG to 4.100V.
Connect to ground directly to set VBATREG
to 4.352V
Not Installed Not Installed
S1 /QON pin pull-down. No function. Not Populated Not Populated
S2 STAT and /PG LED bypass switches 1-4: Open, 2-3: Open 1-4: Open, 2-3: Open
Table 4 lists the recommended operating conditions for this EVM.
Table 4. Recommended Operating Conditions
Symbol Description MIN TYP MAX Unit
VVBUS,VVAC Input voltage applied to VAC and VBUS pins 4.0 13.5 V
VBAT Battery voltage applied to BAT pin 4.35 V
IVBUS Input current into VBUS 3.2 A
ISW Output current (SW) 3.2 A
IBAT Fast charging current 3.0 A
RMS Discharging current through internal
BATFET 6.0 A

Load #1
V
V
+
-
+
-
V
+
-
Power Supply
#1 V
+
-
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2 Test Summary
2.1 Equipment
This section includes a list of supplies required for testing this EVM.
1. Power Supplies: Power supply #1 (PS1): A power supply capable of supplying 5 V at 3 A is required.
While this part can handle larger voltage and current, it is not necessary for this procedure.
2. Loads: Load #1 (4-Quadrant Supply, Constant Voltage < 4.5 V): A "Kepco" Load, BOP, 20-5M, DC 0
to ±20 V, 0 to ±5 A (or higher)
Alternative Option: A 0-20V/0-5A >30-W DC electronic load set in a constant voltage loading mode.
Load #2 (Electronic or Resistive Load): 10 Ω, 5 W (or higher)
3. Meters: (6x) "Fluke 75" multi-meters, (equivalent or better).
Alternative Option: (4x) equivalent voltage meters and (2x) equivalent current meters. The current
meters must be capable of measuring at least 5-A.
2.2 Equipment Setup
Use the following instructions to set up the equipment:
1. Review EVM connections in Table 2.
2. Set PS1 for 5-V DC, 3-A current limit and then turn off the supply.
3. Connect the output of PS1 in series with a current meter to J1 (VAC and GND).
4. Connect a voltage meter across TP7 (VBUS) and TP25 (PGND), or across J1.
5. Turn on Load #1, set to constant voltage mode, and output to 3.7-V. Disable Load. Connect Load in
series with a current meter (multimeter), ground side, to J5 (BATTERY and GND) as shown in
Figure 1.
6. Connect one voltage meter across TP15 (BAT) and TP24 (PGND), or across J4-2 and J4-1 as shown
in Figure 1.
7. Connect one voltage meter across TP14 (SYS) and TP24 (PGND), or across J2-1 and J2-2 as shown
in Figure 1.
8. Install shunts as shown in Table 3.
Figure 1. Original Test Setup for BMS026 EVM

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2.3 Test Procedure
2.3.1 Initial Settings
1. Ensure Section 2.2 steps have been followed.
2. Adjust R22 potentiometer to increase input current limit to the maximum value. To do this, turn R22
clockwise until a click is heard.
3. Turn on PS1
• Measure →VSYS (SYS-TP14 and PGND-TP24) = 4.20V±0.3V
NOTE: Completely disconnect Load #1 from BAT pin if different voltage value is seen.
2.3.2 Charge Mode Verification
1. PS1 should be on from Section 2.3.1.
2. Enable Load #1.
3. Adjust R12 potentiometer to increase the charge current limit to 1A
• Measure →IBAT (current into Load #1) = 1.0A±25mA
• Record IBAT measurement
4. Change Load #1 to 2.5V
• Measure →VSYS (SYS-TP14 and PGND-TP24) = 3.65V±0.3V
• Measure →IBAT (current into Load #1) = 5% of previous IBAT result ≈50mA±15mA
2.3.3 Boost Mode Verification
1. Turn off and disconnect PS1.
2. Set Load #1 to 3.7V and 2A current limit.
NOTE: If Load #1 connected from BATTERY-J5(2) to PGND-J5(1) is not a four quadrant supply,
remove Load #1 and use PS1 (disconnected previously), set to 3.7V, 2A current limit and
connect across BATTERY-J5(2) to PGND-J5(1).
3. Remove shunt JP20 to enable boost mode.
4. Connect Load #2 across VAC-J1(2) and GND-J1(1).
• Measure →VBUS (VBUS-TP7 and PGND-TP25) = 5.0V±0.2V
5. Turn off and disconnect power supply.
6. Remove Load #2 from connection.
7. Reconnect shunt JP20.
2.3.4 Helpful Tips
• The leads and cables to the various power supplies, batteries and loads have resistance. The current
meters also have series resistance. The charger dynamically reduces charge current depending on the
voltage sensed at its VAC/VBUS pin (using the VINDPM feature), BAT pin (as part of normal
termination), and TS pin (through its battery temperature monitoring feature via battery thermistor).
Therefore, voltmeters must be used to measure the voltage as close to the IC pins as possible instead
of relying on the digital readouts of the power supply. If a battery thermistor is not available, make sure
shunt jp16 is in place.
• When using a source meter that can source and sink current as your battery simulator, TI highly
recommends adding a large (1000+ μF) capacitor at the EVM BATTERY and GND connectors in order
to prevent oscillations at the BAT pin due to mismatched impedances of the charger output and source
meter input within their respective regulation loop bandwidths.
Configuring the source meter for 4-wire sensing eliminates the need for a separate voltmeter to

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measure the voltage at the BAT pin. When using 4-wire sensing, always ensure that the sensing leads
are connected in order to prevent accidental overvoltage by the power leads
• For precise measurements of input and output currents, especially battery charging current regulation
near termination, the current meter in series with the battery or battery simulator should not be set to
auto-range and may need be removed entirely. An alternate method for measuring charge current is to
either use an oscilloscope with hall effect current probe or by a differential voltage measurement
across the relevant sensing resistors populated on the BMS026 EVM.

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3 PCB Layout Guideline
Minimize the switching node rise and fall times for minimum switching loss. Proper layout of the
components minimizing high-frequency current path loop is important to prevent electrical and magnetic
field radiation and high-frequency resonant problems. This PCB layout priority list must be followed in the
order presented for proper layout:
1. Place the input capacitor as close as possible to the PMID pin and PGND pin connections and use the
shortest copper trace connection or PGND plane.
2. Place the inductor input terminal as close to the SW pin as possible. Minimize the copper area of this
trace to lower electrical and magnetic field radiation but make the trace wide enough to carry the
charging current. Do not use multiple layers in parallel for this connection. Minimize parasitic
capacitance from this area to any other trace or plane.
3. Put an output capacitor near to the inductor and the IC. Tie ground connections to the IC ground with a
short copper trace connection or PGND plane.
4. Route and connect analog ground (AGND) separately from the power ground (PGND).Connect AGND
and PGND together using a power pad as the single ground connection point or use a 0-Ωresistor to
tie.
5. Use a single ground connection to tie PGND to the charger ANGD just beneath the IC. Use ground
copper pour but avoid power pins to reduce inductive and capacitive noise coupling.
6. Place decoupling capacitors next to the IC pins and make the trace connection as short as possible.
7. It is critical that the exposed power pad on the backside of the IC package be soldered to the PCB
ground. Ensure that there are sufficient thermal vias directly under the IC connecting to the ground
plane on the other layers.
8. The via size and number should be enough for a given current path.
See the EVM design for the recommended component placement with trace and via locations. For the
QFN information, see Quad Flatpack No-Lead Logic Packages and QFN/SON PCB Attachment.

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4 Board Layout
Figure 2 through Figure 9 show the EVM PCB layout images.
Figure 2. BMS026 EVM Top Overlay Figure 3. BMS026 EVM Top Solder Mask

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Figure 4. BMS026 EVM Top Layer Figure 5. BMS026 EVM Signal Layer 1

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Figure 6. BMS026 EVM Signal Layer 2 Figure 7. BMS026 EVM Bottom Layer

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Figure 8. BMS026 Bottom Solder Mask Figure 9. BMS026 Bottom Overlay

1 2
3 4
5 6
7 8
9 10
J6
DNP
0
R30
DNP
200
R27
200
R28 /PG
OTG
PGND
VBUS 1
D- 2
D+ 3
ID 4
GND 5
67 8
11
10
9
J4
VAC
PGND
PGND
4
1
2
3
J7
PGND
OTG
/PG
/CE
D+
PGND
VAC
GND
PMID
GND
4V - 13.5V
1000pF
C5
DNP
10.0k
R8
10.0k
R10
1
2
JP20
/CE
AGND
AGND
TP8TP7
1uF
C4
TP9 TP10 TP13
13V
D2
DNP
2.21k
R16
30.1k
R24
10
R4
DNP
0.1uF
C8
DNP
SYSTEM
GND
GND
PGND
BATTERY
PGND
PULL-UP
TS
GND
10uF
C6
DNP
10uF
C9
DNP
20V
D1
DNP
40V
D4
DNP
0.047uF
C1
0
R6
1
2
3
J5
TP12
ICHG
PGND
1uH
L2
DNP
4.7k
R18
DNP
AGND
S1
DNP
STAT
REGN
CSD17571Q2
3
5,6,8 4,7
1,2,
Q1
0
R5 PGND
1
2
JP1
DNP
1
2
JP3
DNP
PGND
PGND
1uF
C3
DNP
OTG
VBUS PMID
VAC
VAC
/PG
D+
D-
10k ohm
R12
PGND
/CE
10K
TS
20V
D5
DNP
1
2
J3
1
2
3
JP10
DNP
AGND
10.0k
R15
DNP
REGN
D+
1
2
JP17
/CE
AGND
PMID
10uF
C14
10uF
C13
DNP
10uF
C15
DNP
1000pF
C16
DNP
4.7uF
C10
AGND
PMID
VSET
1
2
JP18
10.0k
R25
5.23k
R20
1
2
JP11
REGN
1
2
JP16
REGN
110pF
C11
DNP
ILIM
AGND
1
2
3 4 5
SW1
DNP
PGND
1
2
3
JP5
PULL-UP
1
2
JP4
DNP
1
2
JP2
DNP
1000pF
C17
DNP
4.7uF
C20
DNP
4.7uF
C19
DNP
NT1
Net-Tie
0
R26
DNP
Green
1
2
D6
REGN
RTOP TS
PSEL
GND
REGN
/CE
GND
GND
OTG
TP15
TP14
SYS
BAT
BAT
SYS
TP11
REGN ICHG ILIMOTG
TP16 TP17
TS
TS
TP18 TP19
D-
TP20 TP21
VSETD+
TP22
/CE
TP24 TP25 TP26 TP27
AGND
BAT
SYS
PULLUP
10k ohm
R22
PULL-UP
1
2
3 4 5
SW2
DNP
1
2
3 4 5
SW4
DNP
1
2
3 4 5
SW3
DNP
BAT
SYS
SW
PMID
1
2
JP6
OTG
1
2
3
JP21
AGND
VSET
1uF
C2
0.1uF
C12
DNP
AGND
0.005
R1
DNP
STAT
STAT
BTST
1
2
JP13
2.21k
R17
Green
1
2
D7
1
2
JP14
/PG
TP23
VAC
0
R23
D-
10.0k
R29
PGND
D-
VBUS
AGND
1 2
JP9
1 2
JP19
DNP
10.0k
R14
DNP PULL-UP
1
2
4 3
S2
TP28 TP29
0.01
R2
158
R19
1.00k
R21
221
R11
2.80k
R13
1
2
3
JP7
DNP BATSNS_ICHG
BAT
BATCON 0.01
R9
40V
D3
TP1
0.01
R3
TP2 TP3 TP4
TP5
TP6
1
2
J1
1
2
J2
1uH
L1
SW 19
BTST 21
REGN 22
VBUS
24
VSET
12
SYS 15
OTG
6
SW 20
SYS 16
ICHG
10
TS 11
PG
7
ACDRV
2
D-
4
ILIM
8
PMID
23
BAT 13
CE
9
VAC
1
PGND 18
D+
3
PGND 17
STAT 5
BAT 14
PAD 25
BQ25616RTW
U1
ACDRV
10.0kR7
/PG
VSET
ICHG
ILIM
ACDRV
PGND
ACDRV
TS
1 2
JP12
1 2
JP8
ICHG
AGND
1
2
3
JP15
DNP
AGND
ILIM
ICHG
3.2A
4V - 13.5V
1.2A
0V - 4.40V
3A
0V - 4.35V
3A
10uF
C7
10uF
C18
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5 Schematic
Figure 10 shows the schematic for the BQ25616EVM.
Figure 10. BQ25616EVM Schematic

1 2
3 4
5 6
7 8
9 10
J6
DNP
0
R30
DNP
200
R27
200
R28 /PG
OTG
PGND
VBUS 1
D- 2
D+ 3
ID 4
GND 5
67 8
11
10
9
J4
VAC
PGND
PGND
4
1
2
3
J7
PGND
OTG
/PG
/CE
D+
PGND
VAC
GND
PMID
GND
4V - 13.5V
1000pF
C5
DNP
10.0k
R8
10.0k
R10
1
2
JP20
/CE
AGND
AGND
TP8TP7
1uF
C4
TP9 TP10 TP13
13V
D2
DNP
2.21k
R16
30.1k
R24
10
R4
DNP
0.1uF
C8
DNP
SYSTEM
GND
GND
PGND
BATTERY
PGND
PULL-UP
TS
GND
10uF
C6
DNP
10uF
C9
DNP
20V
D1
DNP
40V
D4
DNP
0.047uF
C1
0
R6
1
2
3
J5
TP12
ICHG
PGND
1uH
L2
DNP
4.7k
R18
DNP
AGND
S1
DNP
STAT
REGN
CSD17571Q2
3
5,6,8 4,7
1,2,
Q1
0
R5 PGND
1
2
JP1
DNP
1
2
JP3
DNP
PGND
PGND
1uF
C3
DNP
OTG
VBUS PMID
VAC
VAC
/PG
D+
D-
10k ohm
R12
PGND
/CE
10K
TS
20V
D5
DNP
1
2
J3
1
2
3
JP10
DNP
AGND
10.0k
R15
DNP
REGN
D+
1
2
JP17
/CE
AGND
PMID
10uF
C14
10uF
C13
DNP
10uF
C15
DNP
1000pF
C16
DNP
4.7uF
C10
AGND
PMID
VSET
1
2
JP18
10.0k
R25
5.23k
R20
1
2
JP11
REGN
1
2
JP16
REGN
110pF
C11
DNP
ILIM
AGND
1
2
3 4 5
SW1
DNP
PGND
1
2
3
JP5
PULL-UP
1
2
JP4
DNP
1
2
JP2
DNP
1000pF
C17
DNP
4.7uF
C20
DNP
4.7uF
C19
DNP
NT1
Net-Tie
0
R26
DNP
Green
1
2
D6
REGN
RTOP TS
PSEL
GND
REGN
/CE
GND
GND
OTG
TP15
TP14
SYS
BAT
BAT
SYS
TP11
REGN ICHG ILIMOTG
TP16 TP17
TS
TS
TP18 TP19
D-
TP20 TP21
VSETD+
TP22
/CE
TP24 TP25 TP26 TP27
AGND
BAT
SYS
PULLUP
10k ohm
R22
PULL-UP
1
2
3 4 5
SW2
DNP
1
2
3 4 5
SW4
DNP
1
2
3 4 5
SW3
DNP
BAT
SYS
SW
PMID
1
2
JP6
OTG
1
2
3
JP21
AGND
VSET
1uF
C2
0.1uF
C12
DNP
AGND
0.005
R1
DNP
STAT
STAT
BTST
1
2
JP13
2.21k
R17
Green
1
2
D7
1
2
JP14
/PG
TP23
VAC
0
R23
D-
10.0k
R29
PGND
D-
VBUS
AGND
1 2
JP9
1 2
JP19
DNP
10.0k
R14
DNP PULL-UP
1
2
4 3
S2
TP28 TP29
0.01
R2
158
R19
1.00k
R21
221
R11
2.80k
R13
1
2
3
JP7
DNP BATSNS_ICHG
BAT
BATCON 0.01
R9
40V
D3
TP1
0.01
R3
TP2 TP3 TP4
TP5
TP6
1
2
J1
1
2
J2
1uH
L1
SW 19
BTST 21
REGN 22
VBUS
24
VSET
12
SYS 15
OTG
6
SW 20
SYS 16
ICHG
10
TS 11
PG
7
ACDRV
2
D-
4
ILIM
8
PMID
23
BAT 13
CE
9
VAC
1
PGND 18
D+
3
PGND 17
STAT 5
BAT 14
PAD 25
BQ25616JRTW
U1
ACDRV
10.0kR7
/PG
VSET
ICHG
ILIM
ACDRV
PGND
ACDRV
TS
1 2
JP12
1 2
JP8
ICHG
AGND
1
2
3
JP15
DNP
AGND
ILIM
ICHG
3.2A
4V - 13.5V
1.2A
0V - 4.40V
3A
0V - 4.35V
3A
10uF
C7
10uF
C18
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BQ25616, BQ25616J BMS026 Evaluation Module
Figure 11 shows the schematic for the BQ25616JEVM
Figure 11. BQ25616JEVM Schematic

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BQ25616, BQ25616J BMS026 Evaluation Module
6 Bill of Materials
Table 5 lists the BQ25616EVM BOM.
(1) Unless otherwise noted in the Alternate PartNumber and/or Alternate Manufacturer columns, all parts may be substituted with equivalents.
Table 5. BQ25616EVM Bill of Materials
Designator Quantity Value Description Package
Reference Part Number Manufacturer Alternate PartNumber(1) Alternate Manufacturer(1)
!PCB1 1 Printed Circuit Board BMS026 Any
C1 1 0.047µF CAP, CERM, 0.047 µF, 25 V, +/- 10%, X7R, 0402 0402 GRM155R71E4
73KA88D MuRata
C2 1 1µF CAP, CERM, 1 µF, 25 V, +/- 10%, X7R, 0805 0805 GRM219R71E1
05KA88D MuRata
C4 1 1µF CAP, CERM, 1 µF, 35 V, +/- 10%, X5R, 0603 0603 GMK107BJ105K
A-T Taiyo Yuden
C7 1 10µF CAP, CERM, 10 µF, 10 V, +/- 10%, X7R, 0805 0805 GRM21BR71A1
06KA73L MuRata
C10 1 4.7µF CAP, CERM, 4.7 µF, 16 V, +/- 10%, X5R, 0603 0603 GRM188R61C4
75KAAJD MuRata
C14 1 10µF CAP, CERM, 10 µF, 25 V, +/- 10%, X5R, 0805 0805 GRM21BR61E1
06KA73L MuRata
C18 1 10µF CAP, CERM, 10 µF, 10 V, +/- 10%, X7R, 0805 0805 GRM21BR71A1
06KE51L MuRata
D3 1 40V Diode, Schottky, 40 V, 0.38 A, SOD-523 SOD-523 ZLLS350TA Diodes Inc.
D6, D7 2 Green LED, Green, SMD 1.6x0.8x0.8mm LTST-C190GKT Lite-On
H1, H2, H3, H4 4 Bumpon, Hemisphere, 0.44 X 0.20, Clear Transparent
Bumpon SJ-5303 (CLEAR) 3M
J1, J2, J3 3 Conn Term Block, 2POS, 3.81mm, TH 2POS Terminal
Block 1727010 Phoenix Contact
J4 1 Connector, Receptacle, Micro-USB Type B, R/A,
Bottom Mount SMT MICRO USB CONN, R/A 1981568-1 TE Connectivity
J5 1 Terminal Block Receptacle, 3x1, 3.81mm, R/A, TH Term Block, 3
pos 1727023 Phoenix Contact
J7 1 Header (friction lock), 100mil, 4x1, R/A, TH 4x1 R/A Header 0022053041 Molex
JP5, JP21 2 Header, 100mil, 3x1, Tin, TH Header, 3 PIN,
100mil, Tin PEC03SAAN Sullins
Connector
Solutions
JP6, JP8, JP9,
JP11, JP12,
JP13, JP14,
JP16, JP17,
JP18, JP20
11 Header, 100mil, 2x1, Tin, TH Header, 2 PIN,
100mil, Tin PEC02SAAN Sullins
Connector
Solutions

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15
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BQ25616, BQ25616J BMS026 Evaluation Module
Table 5. BQ25616EVM Bill of Materials (continued)
Designator Quantity Value Description Package
Reference Part Number Manufacturer Alternate PartNumber(1) Alternate Manufacturer(1)
L1 1 1µH Inductor, 1 µH, 3.2 A, 0.028 ohm, SMD 2.5x2mm MPIM252010F1
R0M-LF Microgate
LBL1 1 Thermal Transfer Printable Labels, 0.650" W x
0.200" H - 10,000 per roll PCB Label
0.650 x 0.200
inch THT-14-423-10 Brady
Q1 1 30V MOSFET, N-CH, 30 V, 22 A, DQK0006C (WSON-6) DQK0006C CSD17571Q2 Texas
Instruments None
R2, R3, R9 3 0.01 RES, 0.01, 1%, 1 W, 2010 2010 WSL2010R0100
FEA18 Vishay-Dale
R5, R6, R23 3 0 RES, 0, 5%, 0.063 W, AEC-Q200 Grade 0, 0402 0402 CRCW0402000
0Z0ED Vishay-Dale
R7, R8, R10,
R25, R29 5 10.0k RES, 10.0 k, 1%, 0.063 W, AEC-Q200 Grade 0, 0402 0402 CRCW040210K 0FKED Vishay-Dale
R11 1 221 RES, 221, 1%, 0.063 W, AEC-Q200 Grade 0, 0402 0402 CRCW0402221
RFKED Vishay-Dale
R12, R22 2 10k ohm Trimmer, 10k ohm, 0.25W, TH 4.5x8x6.7mm 3266W-1-103LF Bourns
R13 1 2.80k RES, 2.80 k, 1%, 0.063 W, AEC-Q200 Grade 0,
0402 0402 CRCW04022K8 0FKED Vishay-Dale
R16, R17 2 2.21k RES, 2.21 k, 1%, 0.063 W, AEC-Q200 Grade 0,
0402 0402 CRCW04022K2 1FKED Vishay-Dale
R19 1 158 RES, 158, 1%, 0.063 W, AEC-Q200 Grade 0, 0402 0402 CRCW0402158
RFKED Vishay-Dale
R20 1 5.23k RES, 5.23 k, 1%, 0.063 W, AEC-Q200 Grade 0,
0402 0402 CRCW04025K2 3FKED Vishay-Dale
R21 1 1.00k RES, 1.00 k, 1%, 0.063 W, AEC-Q200 Grade 0,
0402 0402 CRCW04021K0 0FKED Vishay-Dale
R24 1 30.1k RES, 30.1 k, 1%, 0.063 W, AEC-Q200 Grade 0,
0402 0402 CRCW040230K 1FKED Vishay-Dale
R27, R28 2 200 RES, 200, 1%, 0.063 W, AEC-Q200 Grade 0, 0402 0402 CRCW0402200
RFKED Vishay-Dale
S2 1 Switch, SPST, 2 Pos, 25mA, 24VDC, SMD 3.71x5.8mm 218-2LPST CTS Electrocompone
nts
SH-JP5, SH-
JP6, SH-JP8,
SH-JP9, SH-
JP11, SH-JP12,
SH-JP13, SH-
JP14, SH-JP16,
SH-JP17, SH-
JP20
11 1x2 Shunt, 100mil, Gold plated, Black Shunt SNT-100-BK-G Samtec 969102-0000-
DA 3M

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BQ25616, BQ25616J BMS026 Evaluation Module
Table 5. BQ25616EVM Bill of Materials (continued)
Designator Quantity Value Description Package
Reference Part Number Manufacturer Alternate PartNumber(1) Alternate Manufacturer(1)
TP1, TP2, TP3,
TP4, TP5, TP6,
TP9, TP10,
TP12, TP13,
TP16, TP17,
TP18, TP19,
TP20, TP21,
TP22, TP23
18 Test Point, Miniature, White, TH White Miniature
Testpoint 5002 Keystone
TP7, TP8 2 Test Point, Miniature, Red, TH Red Miniature
Testpoint 5000 Keystone
TP11, TP14 2 Test Point, Miniature, Orange, TH Orange Miniature
Testpoint 5003 Keystone
TP15 1 Test Point, Miniature, Yellow, TH Yellow Miniature
Testpoint 5004 Keystone
TP24, TP25,
TP26, TP27,
TP28, TP29 6 Test Point, Compact, SMT Testpoint_Keyst
one_Compact 5016 Keystone
U1 1 BQ25616RTW, RTW0024P (PVQFN-24) RTW0024P BQ25616RTW Texas
Instruments Texas Instruments
C3 0 1µF CAP, CERM, 1 µF, 35 V, +/- 10%, X5R, 0603 0603 GMK107BJ105K
A-T Taiyo Yuden
C5, C16, C17 0 1000pF CAP, CERM, 1000 pF, 50 V, +/- 5%, C0G/NP0,
0402 0402 GRM1555C1H1 02JA01D MuRata
C6, C9 0 10µF CAP, CERM, 10 µF, 10 V, +/- 10%, X7R, 0805 0805 GRM21BR71A1
06KE51L MuRata
C8 0 0.1µF CAP, CERM, 0.1 µF, 25 V, +/- 20%, X7R, 0402 0402 C1005X7R1E10
4M050BB TDK
C11 0 110pF CAP, CERM, 110 pF, 25 V, +/- 5%, C0G/NP0, 0402 0402 GRM1555C1E1
11JA01D MuRata
C12 0 0.1µF CAP, CERM, 0.1 µF, 25 V, +/- 10%, X7R, 0402 0402 GRM155R71E1
04KE14D MuRata
C13 0 10µF CAP, CERM, 10 µF, 25 V, +/- 10%, X5R, 0805 0805 GRM21BR61E1
06KA73L MuRata
C15 0 10µF CAP, CERM, 10 µF, 25 V, +/- 10%, X7S, 0805 0805 GRM21BC71E1
06KE11L MuRata
C19, C20 0 4.7µF CAP, CERM, 4.7 µF, 16 V, +/- 10%, X5R, 0603 0603 GRM188R61C4
75KAAJ MuRata
D1, D5 0 20V Diode, Schottky, 20 V, 1 A, 152AD 152AD NSR10F20NXT5
GON Semiconductor

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17
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BQ25616, BQ25616J BMS026 Evaluation Module
Table 5. BQ25616EVM Bill of Materials (continued)
Designator Quantity Value Description Package
Reference Part Number Manufacturer Alternate PartNumber(1) Alternate Manufacturer(1)
D2 0 13V Diode, TVS, Uni, 13 V, 21.5 Vc, SOD-123W SOD-123W PTVS13VS1UR,
115 NXP Semiconductor
D4 0 40V Diode, Schottky, 40 V, 0.38 A, SOD-523 SOD-523 ZLLS350TA Diodes Inc.
FID1, FID2,
FID3, FID4,
FID5, FID6 0 Fiducial mark. There is nothing to buy or mount. N/A N/A N/A
J6 0 Header (shrouded), 100mil, 5x2, High-Temperature,
Gold, TH 5x2 Shrouded header N2510-6002-RB 3M
JP1, JP2, JP3,
JP4, JP19 0 Header, 100mil, 2x1, Tin, TH Header, 2 PIN, 100mil, Tin PEC02SAAN Sullins
Connector
Solutions
JP7, JP10, JP15 0 Header, 100mil, 3x1, Tin, TH Header, 3 PIN,
100mil, Tin PEC03SAAN Sullins
Connector
Solutions
L2 0 1µH Inductor, Wirewound, 1 µH, 4 A, 0.041 ohm, SMD 4.06x4.06mm 74437321010 Wurth Elektronik
R1 0 0.005 RES, 0.005, 1%, 0.25 W, AEC-Q200 Grade 1, 0603 0603 ERJ3LWFR005
VPanasonic
R4 0 10 RES, 10, 5%, 0.063 W, AEC-Q200 Grade 0, 0402 0402 CRCW040210R
0JNED Vishay-Dale
R14, R15 0 10.0k RES, 10.0 k, 1%, 0.063 W, AEC-Q200 Grade 0,
0402 0402 CRCW040210K 0FKED Vishay-Dale
R18 0 4.7k RES, 4.7 k, 5%, 0.063 W, AEC-Q200 Grade 0, 0402 0402 CRCW04024K7
0JNED Vishay-Dale
R26, R30 0 0 RES, 0, 5%, 0.063 W, AEC-Q200 Grade 0, 0402 0402 CRCW0402000
0Z0ED Vishay-Dale
S1 0 Switch, Normally open, 2.3N force, 200k operations,
SMD KSR KSR221GLFS C&K Components
SH-JP1, SH-
JP2, SH-JP3,
SH-JP4, SH-
JP7, SH-JP10,
SH-JP15, SH-
JP18, SH-JP19,
SH-JP21
0 1x2 Shunt, 100mil, Gold plated, Black Shunt SNT-100-BK-G Samtec 969102-0000-
DA 3M
SW1, SW2,
SW3, SW4 0Compact Probe Tip Circuit Board Test Points, TH, 25 per TH Scope Probe 131-5031-00 Tektronix

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BQ25616, BQ25616J BMS026 Evaluation Module
Table 6 lists the BQ25616JEVM BOM.
(1) Unless otherwise noted in the Alternate PartNumber and/or Alternate Manufacturer columns, all parts may be substituted with equivalents.
Table 6. BQ25616JEVM Bill of Materials
Designator Quantity Value Description Package
Reference Part Number Manufacturer Alternate PartNumber(1) Alternate Manufacturer(1)
!PCB1 1 Printed Circuit Board BMS026 Any
C1 1 0.047µF CAP, CERM, 0.047 µF, 25 V, +/- 10%, X7R, 0402 0402 GRM155R71E4
73KA88D MuRata
C2 1 1µF CAP, CERM, 1 µF, 25 V, +/- 10%, X7R, 0805 0805 GRM219R71E1
05KA88D MuRata
C4 1 1µF CAP, CERM, 1 µF, 35 V, +/- 10%, X5R, 0603 0603 GMK107BJ105K
A-T Taiyo Yuden
C7 1 10µF CAP, CERM, 10 µF, 10 V, +/- 10%, X7R, 0805 0805 GRM21BR71A1
06KA73L MuRata
C10 1 4.7µF CAP, CERM, 4.7 µF, 16 V, +/- 10%, X5R, 0603 0603 GRM188R61C4
75KAAJD MuRata
C14 1 10µF CAP, CERM, 10 µF, 25 V, +/- 10%, X5R, 0805 0805 GRM21BR61E1
06KA73L MuRata
C18 1 10µF CAP, CERM, 10 µF, 10 V, +/- 10%, X7R, 0805 0805 GRM21BR71A1
06KE51L MuRata
D3 1 40V Diode, Schottky, 40 V, 0.38 A, SOD-523 SOD-523 ZLLS350TA Diodes Inc.
D6, D7 2 Green LED, Green, SMD 1.6x0.8x0.8mm LTST-C190GKT Lite-On
H1, H2, H3, H4 4 Bumpon, Hemisphere, 0.44 X 0.20, Clear Transparent
Bumpon SJ-5303 (CLEAR) 3M
J1, J2, J3 3 Conn Term Block, 2POS, 3.81mm, TH 2POS Terminal
Block 1727010 Phoenix Contact
J4 1 Connector, Receptacle, Micro-USB Type B, R/A,
Bottom Mount SMT MICRO USB CONN, R/A 1981568-1 TE Connectivity
J5 1 Terminal Block Receptacle, 3x1, 3.81mm, R/A, TH Term Block, 3
pos 1727023 Phoenix Contact
J7 1 Header (friction lock), 100mil, 4x1, R/A, TH 4x1 R/A Header 0022053041 Molex
JP5, JP21 2 Header, 100mil, 3x1, Tin, TH Header, 3 PIN,
100mil, Tin PEC03SAAN Sullins
Connector
Solutions
JP6, JP8, JP9,
JP11, JP12,
JP13, JP14,
JP16, JP17,
JP18, JP20
11 Header, 100mil, 2x1, Tin, TH Header, 2 PIN,
100mil, Tin PEC02SAAN Sullins
Connector
Solutions
L1 1 1µH Inductor, 1 µH, 3.2 A, 0.028 ohm, SMD 2.5x2mm MPIM252010F1
R0M-LF Microgate

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19
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BQ25616, BQ25616J BMS026 Evaluation Module
Table 6. BQ25616JEVM Bill of Materials (continued)
Designator Quantity Value Description Package
Reference Part Number Manufacturer Alternate PartNumber(1) Alternate Manufacturer(1)
LBL1 1 Thermal Transfer Printable Labels, 0.650" W x
0.200" H - 10,000 per roll PCB Label
0.650 x 0.200
inch THT-14-423-10 Brady
Q1 1 30V MOSFET, N-CH, 30 V, 22 A, DQK0006C (WSON-6) DQK0006C CSD17571Q2 Texas
Instruments None
R2, R3, R9 3 0.01 RES, 0.01, 1%, 1 W, 2010 2010 WSL2010R0100
FEA18 Vishay-Dale
R5, R6, R23 3 0 RES, 0, 5%, 0.063 W, AEC-Q200 Grade 0, 0402 0402 CRCW0402000
0Z0ED Vishay-Dale
R7, R8, R10,
R25, R29 5 10.0k RES, 10.0 k, 1%, 0.063 W, AEC-Q200 Grade 0, 0402 0402 CRCW040210K 0FKED Vishay-Dale
R11 1 221 RES, 221, 1%, 0.063 W, AEC-Q200 Grade 0, 0402 0402 CRCW0402221
RFKED Vishay-Dale
R12, R22 2 10k ohm Trimmer, 10k ohm, 0.25W, TH 4.5x8x6.7mm 3266W-1-103LF Bourns
R13 1 2.80k RES, 2.80 k, 1%, 0.063 W, AEC-Q200 Grade 0,
0402 0402 CRCW04022K8 0FKED Vishay-Dale
R16, R17 2 2.21k RES, 2.21 k, 1%, 0.063 W, AEC-Q200 Grade 0,
0402 0402 CRCW04022K2 1FKED Vishay-Dale
R19 1 158 RES, 158, 1%, 0.063 W, AEC-Q200 Grade 0, 0402 0402 CRCW0402158
RFKED Vishay-Dale
R20 1 5.23k RES, 5.23 k, 1%, 0.063 W, AEC-Q200 Grade 0,
0402 0402 CRCW04025K2 3FKED Vishay-Dale
R21 1 1.00k RES, 1.00 k, 1%, 0.063 W, AEC-Q200 Grade 0,
0402 0402 CRCW04021K0 0FKED Vishay-Dale
R24 1 30.1k RES, 30.1 k, 1%, 0.063 W, AEC-Q200 Grade 0,
0402 0402 CRCW040230K 1FKED Vishay-Dale
R27, R28 2 200 RES, 200, 1%, 0.063 W, AEC-Q200 Grade 0, 0402 0402 CRCW0402200
RFKED Vishay-Dale
S2 1 Switch, SPST, 2 Pos, 25mA, 24VDC, SMD 3.71x5.8mm 218-2LPST CTS Electrocompone
nts
SH-JP5, SH-
JP6, SH-JP8,
SH-JP9, SH-
JP11, SH-JP12,
SH-JP13, SH-
JP14, SH-JP16,
SH-JP17, SH-
JP20
11 1x2 Shunt, 100mil, Gold plated, Black Shunt SNT-100-BK-G Samtec 969102-0000-
DA 3M

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BQ25616, BQ25616J BMS026 Evaluation Module
Table 6. BQ25616JEVM Bill of Materials (continued)
Designator Quantity Value Description Package
Reference Part Number Manufacturer Alternate PartNumber(1) Alternate Manufacturer(1)
TP1, TP2, TP3,
TP4, TP5, TP6,
TP9, TP10,
TP12, TP13,
TP16, TP17,
TP18, TP19,
TP20, TP21,
TP22, TP23
18 Test Point, Miniature, White, TH White Miniature
Testpoint 5002 Keystone
TP7, TP8 2 Test Point, Miniature, Red, TH Red Miniature
Testpoint 5000 Keystone
TP11, TP14 2 Test Point, Miniature, Orange, TH Orange Miniature
Testpoint 5003 Keystone
TP15 1 Test Point, Miniature, Yellow, TH Yellow Miniature
Testpoint 5004 Keystone
TP24, TP25,
TP26, TP27,
TP28, TP29 6 Test Point, Compact, SMT Testpoint_Keyst
one_Compact 5016 Keystone
U1 1 BQ25616JRTW, RTW0024P (PVQFN-24) RTW0024P BQ25616JRTW Texas
Instruments Texas Instruments
C3 0 1µF CAP, CERM, 1 µF, 35 V, +/- 10%, X5R, 0603 0603 GMK107BJ105K
A-T Taiyo Yuden
C5, C16, C17 0 1000pF CAP, CERM, 1000 pF, 50 V, +/- 5%, C0G/NP0,
0402 0402 GRM1555C1H1 02JA01D MuRata
C6, C9 0 10µF CAP, CERM, 10 µF, 10 V, +/- 10%, X7R, 0805 0805 GRM21BR71A1
06KE51L MuRata
C8 0 0.1µF CAP, CERM, 0.1 µF, 25 V, +/- 20%, X7R, 0402 0402 C1005X7R1E10
4M050BB TDK
C11 0 110pF CAP, CERM, 110 pF, 25 V, +/- 5%, C0G/NP0, 0402 0402 GRM1555C1E1
11JA01D MuRata
C12 0 0.1µF CAP, CERM, 0.1 µF, 25 V, +/- 10%, X7R, 0402 0402 GRM155R71E1
04KE14D MuRata
C13 0 10µF CAP, CERM, 10 µF, 25 V, +/- 10%, X5R, 0805 0805 GRM21BR61E1
06KA73L MuRata
C15 0 10µF CAP, CERM, 10 µF, 25 V, +/- 10%, X7S, 0805 0805 GRM21BC71E1
06KE11L MuRata
C19, C20 0 4.7µF CAP, CERM, 4.7 µF, 16 V, +/- 10%, X5R, 0603 0603 GRM188R61C4
75KAAJ MuRata
D1, D5 0 20V Diode, Schottky, 20 V, 1 A, 152AD 152AD NSR10F20NXT5
GON Semiconductor