THORLABS DET05D2 User manual

DET05D2
Extended InGaAs Biased
Detector
User Guide

Extended InGaAs Biased Detector
Table of Contents
Chapter 1Warning Symbol Definitions............................................... 1
Chapter 2Description ........................................................................... 2
Chapter 3Setup.....................................................................................3
Chapter 4Operation..............................................................................4
4.1.TheoryofOperation.......................................................4
4.2.Responsivity..................................................................4
4.3.ModesofOperation.......................................................4
4.4.DarkCurrent..................................................................5
4.5.JunctionCapacitance.....................................................6
4.6.BandwidthandResponse...............................................6
4.7.TerminatingResistance..................................................7
4.8.ShuntResistance............................................................7
4.9.SeriesResistance...........................................................7
4.10.BatteryCheck...............................................................7
4.11.BatteryReplacement....................................................8
Chapter 5Common Operating Circuits...............................................9
Chapter 6Troubleshooting ................................................................11
Chapter 7Specifications ....................................................................12
7.1.ResponseCurve............................................................13
7.2.MechanicalDrawing....................................................14
Chapter 8Certificate of Conformance ..............................................15
Chapter 9Regulatory .......................................................................... 16
Chapter 10Thorlabs Worldwide Contacts..........................................17

Extended InGaAs Biased Detector Chapter 1: Warning Symbol Definitions
Rev A, December 27, 2017 Page 1
Chapter 1 Warning Symbol Definitions
Below is a list of warning symbols you may encounter in this manual or on your
device.
Symbol Description
Direct Current
Alternating Current
Both Direct and Alternating Current
Earth Ground Terminal
Protective Conductor Terminal
Frame or Chassis Terminal
Equipotentiality
On (Supply)
Off (Supply)
In Position of a Bi-Stable Push Control
Out Position of a Bi-Stable Push Control
Caution: Risk of Electric Shock
Caution: Hot Surface
Caution: Risk of Danger
Warning: Laser Radiation
Caution: ESD Sensitive Components

Extended InGaAs Biased Detector Chapter 2: Description
Page 2 TTN134284-D02
Chapter 2 Description
The Thorlabs DET05D2 is a biased, extended-range, Indium Gallium Arsenide
(InGaAs) detector designed for detection of light signals ranging from
900 nm to 2600 nm. The unit comes complete with a photodiode and an internal
12 V bias battery enclosed in a rugged aluminum housing. The DET05D2
includes a removable 1" optical coupler (SM1T1), providing easy mounting of ND
filters, spectral filters, fiber adapters (SMA, FC and ST style), and other 1"
stackable lens mount accessories offered by Thorlabs.
ESD Caution
The components inside this instrument are ESD sensitive. Take all appropriate
precautions to discharge personnel and equipment before making any electrical
connections to the unit.

Extended InGaAs Biased Detector Chapter 3: Setup
Rev A, December 27, 2017 Page 3
Chapter 3 Setup
The detector can be set up in many different ways using our extensive line of
adapters. However, the detector should always be mounted and secured for best
operation. Step 1 in the setup instructions below outline how to mount the
detector onto a post.
1. Unpack the optical head, install either an imperial or metric optical post
into one of the mounting holes located on the bottom and side of the
sensor, and mount using a post holder. Note that these detectors
feature tapped holes that accept both 8-32 and M4 threads, so using
either imperial or metric TR posts is possible.
2. Attach a 50 Ωcoax cable (i.e. RG-58U) to the output of the DET. Select
and install a terminating resistor to the remaining end of the cable and
connect to a voltage measurement device. See Chapter 4, page 7 to
determine resistor values. Thorlabs sells a 50 Ωterminator (T4119) for
best frequency performance and a variable terminator (VT2) for output
voltage flexibility. Note the input impedance of your measurement
device since this will act as a terminating resistor. A load resistor is not
necessary when using current measurement devices.
3. Power the DET on using the power switch. To check battery voltage,
see the Battery Check section on page 7.
4. Install any desired filters, optics, adapters, or fiber adapters to the input
aperture.
Caution!
The DET05D2 was designed to allow maximum accessibility to the
photodetector by having the active area surface of the diode flush with the
outside of the DET housing. When using fiber adapters, make sure that the fiber
ferrule does not crash into the detector. Failure to do so may cause damage to
the diode and/or the fiber.
5. During alignment, take appropriate precautions, such as using reduced
radiation power, or other precautions, and use proper eye and/or skin
protection as recommended by the radiation source manufacturer.
6. Apply a light source to the detector.
!
!

Extended InGaAs Biased Detector Chapter 4: Operation
Page 4 TTN134284-D02
Chapter 4 Operation
4.1. Theory of Operation
A junction photodiode is an intrinsic device which behaves similarly to an
ordinary signal diode, but it generates a photocurrent when light is absorbed in
the depleted region of the junction semiconductor. A photodiode is a fast, highly
linear device that exhibits high quantum efficiency based upon the application
and may be used in a variety of different applications.
It is necessary to be able to correctly determine the level of the output current to
expect and the responsivity based upon the incident light. Depicted in Figure 1 is
a junction photodiode model with basic discrete components to help visualize the
main characteristics and gain a better understanding of the operation of Thorlabs'
photodiodes. 





Figure 1 Photodiode Model
4.2. Responsivity
The responsivity of a photodiode can be defined as a ratio of generated
photocurrent (I
PD
) to the incident light power (P) at a given wavelength:
󰇛󰇜


4.3. Modes of Operation
A photodiode can be operated in one of two modes: photoconductive (reverse
bias) or photovoltaic (zero-bias). Mode selection depends upon the applications
speed requirements and the amount of tolerable dark current (leakage current).

Extended InGaAs Biased Detector Chapter 4: Operation
Rev A, December 27, 2017 Page 5
Photoconductive
In photoconductive mode, an external reverse bias is applied, which is the basis
for our DET series detectors. The current measured through the circuit indicates
illumination of the device; the measured output current is linearly proportional to
the input optical power. Applying a reverse bias increases the width of the
depletion junction producing an increased responsivity with a decrease in
junction capacitance and produces a very linear response. Operating under
these conditions does tend to produce a larger dark current but this can be
limited based upon the photodiode material.
Note
The DET detectors are reverse biased and cannot be operated under forward
bias conditions.
Photovoltaic
In photovoltaic mode the photodiode is zero biased. The flow of current out of the
device is restricted and a voltage builds up. This mode of operation exploits the
photovoltaic effect which is the basis for solar cells.
4.4. Dark Current
Dark current is leakage current which flows when a bias voltage is applied to a
photodiode. Photoconductive mode tends to generate a dark current that varies
directly with temperature. It can be inferred that dark current can approximately
double for every 10 °C increase in temperature, and shunt resistance can
decrease to approximately half for every 6 °C rise. Of course, applying a higher
bias will decrease the junction capacitance but will increase the amount of dark
current present.
The dark current present is also affected by the photodiode material and the size
of the active area. Silicon devices generally produce low dark current compared
to germanium devices which have high dark currents. The table below lists
several photodiode materials and their relative dark currents, speeds, sensitivity,
and costs. Please note that sensitivity values in the table are typical values;
Thorlabs offers photodetectors with sensitivity ranges that vary from those shown
below.

Extended InGaAs Biased Detector Chapter 4: Operation
Page 6 TTN134284-D02
Material Dark
Current Speed Sensitivity1 (nm) Cost
Silicon (Si) Low High 400 – 1000 Low
Germanium (Ge) High Low 900 – 1600 Low
Gallium Phosphide (GaP) Low High 150 – 550 Med
Indium Gallium Arsenide
(InGaAs) Low High 800 – 1800 Med
Extended Range: Indium
Gallium Arsenide (InGaAs) High High 1200 – 2600 High
4.5. Junction Capacitance
Junction capacitance (CJ) is an important property of a photodiode as this can
have a profound impact on the bandwidth and the response of a photodiode. It
should be noted that larger diode areas encompass a greater junction volume
with increased charge capacity. In a reverse bias application, the depletion width
of the junction is increased, thus effectively reducing the junction capacitance
and increasing the response speed.
4.6. Bandwidth and Response
The response time of a photodiode is a function the speed at which these
charges move inside the semiconductor as well as the external circuitry
connected to the photodiode. The three main contributions to the response time
are drift time, diffusion, and rise time of the RC circuit.
Drift time (tdf): Time for electron-hole pairs to move from the depletion zone to the
electrodes. The depletion zone has an intrinsic electric field that accelerates the
charges so that they are collected quickly. Hence, the drift time is generally in the
ps time regime.
Diffusion (tdiff): Diffusion time for electron-hole pairs generated outside of the
depletion zone to be collected. Depending on the wavelength used, a larger
proportion of electron-hole pairs are generated in the N and P layers of the
semiconductor, which do not have an electric field to accelerate the charges.
Therefore, the charges are only collected after slowly diffusing through the
semiconductor.
RC (tRC): Rise time of the RC circuit formed by the junction capacitance of the
photodiode, its series resistance (generally negligible), and the load resistance.
This is generally the dominating factor on the bandwidth of the PDs and
detectors and is the reason why the bandwidth is specified for a particular load
resistance. For best frequency response, a 50 Ωterminator should be used in
conjunction with a 50 Ωcoaxial cable. The bandwidth (fBW) and the rise time
response (tr) can be approximated using the junction capacitance and the load
resistance (RLOAD):
1Approximate values, actual wavelength values will vary.

Extended InGaAs Biased Detector Chapter 4: Operation
Rev A, December 27, 2017 Page 7
 1
󰇛2󰇜
0.35

4.7. Terminating Resistance
A load resistance is used to convert the generated photocurrent into a voltage
(VOUT) for viewing on a voltage reading device, e.g., an oscilloscope.

Depending on the type of the photodiode, load resistance can affect the
response speed. For maximum bandwidth, we recommend using a 50 Ωcoaxial
cable with a 50 Ωterminating resistor at the opposite end of the cable. This will
minimize ringing by matching the cable with its characteristic impedance. If
bandwidth is not important, you may increase the amount of voltage for a given
light level by increasing RLOAD. In an unmatched termination the length of the
coaxial cable can have a profound impact on the response, so it is recommended
to keep the cable as short as possible.
4.8. Shunt Resistance
Shunt resistance represents the resistance of the zero-biased photodiode
junction. An ideal photodiode will have an infinite shunt resistance, but actual
values may range from the order of ten Ωto thousands of MΩand is dependent
on the photodiode material. For example, an InGaAs detector has a shunt
resistance on the order of 10 MΩwhile a Ge detector is in the kΩrange. This can
significantly impact the noise current on the photodiode. For most applications,
however, the high resistance produces little effect and can be ignored.
4.9. Series Resistance
Series resistance models the resistance of the semiconductor material plus the
contacts and the wire bonds, and this low resistance can generally be ignored.
The series resistance is used to determine the linearity of the photodiode under
zero bias conditions.
4.10. Battery Check
The DET series includes a battery check feature that will allow the user to
monitor the bias voltage on the output BNC. Simply hold down the “Battery
Check” button located on the bottom edge of the unit. The bias voltage will be
output to the BNC. If a high impedance load is used (>100 kΩ), the output will be
equal to the bias voltage. This feature includes a 2.49 kΩcurrent limiting resistor
(RCL) to prevent excessive loading of the battery if using small terminating
resistors. For example, a 50 Ωload resistor with a 10 V bias will produce a
200 mA current without this resistor. This will significantly decrease lifetime of the
battery.

Extended InGaAs Biased Detector Chapter 4: Operation
Page 8 TTN134284-D02
The output bias voltage will be dependent on the load resistor as described
below. The A23 battery voltage characteristics show that the charge level is
almost depleted as the voltage drops below 10 V. For this calculation we assume
9.6 V since V
BAT
= low battery voltage – one diode drop (0.6 V) = ~9 V. The
detector will continue to operate until the battery charge is completely drained,
however these numbers provide a reference point at which the battery should be
replaced.




∗ 

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



:

9,

50,

2540

Note that V
out
is a theoretical value. If one would like to reverse calculate the bias
voltage more precisely using this feature, then a high impedance load is
suggested.
4.11. Battery Replacement
Thorlabs delivers each DET with an A23 12 V battery.
This battery is readily available at most retail stores, as
well as through Thorlabs. The battery supplied will deliver
about 40 hours with a 1 mA load, roughly equivalent to a
continuous 1.5 mW light source with responsivity 0.6 A/W
The supply current when the unit is on and no light is
applied is very small and should not significantly degrade
the battery.
Locate the battery cap directly above the output BNC.
Unthread the cap and remove the battery. Install the new
battery into the cap, negative side in, and thread back into
the DET. Be careful not to cross thread the cap into the
housing. The DET includes a protection diode to prevent
damage if the battery is installed backwards. The battery
direction is located on the housing.

Extended InGaAs Biased Detector Chapter 5: Common Operating Circuits
Rev A, December 27, 2017 Page 9
Chapter 5 Common Operating Circuits
Figure 2 Basic DET Circuit
The DET Series Detectors are designed according the circuit depicted above.
The detector is reverse biased to produce a linear response with applied input
light. The photocurrent generated is based upon the incident light and
wavelength and can be viewed on the oscilloscope by attaching a load resistance
on the output. The function of the RC Filter is to filter any high frequency noise
from the input supply which may contribute to a noisy output.
Figure 3 Amplified Detector
Photodetector
Transimpedance Amp
Out
Feedback
RF
A
B
-V
BNC
GND
GND GND
RLOAD

Extended InGaAs Biased Detector Chapter 5: Common Operating Circuits
Page 10 TTN134284-D02
One can also use a photodetector with an amplifier for the purpose of achieving
high gain. The user can choose whether to operate in Photovoltaic of
Photoconductive modes. There are a few benefits of choosing this active circuit:
Photovoltaic Mode: The circuit is held at zero volts across the
photodiode, since point A is held at the same potential as point B by the
operational amplifier. This eliminates the possibility of dark current.
Photoconductive mode: The photodiode is reversed biased, thus
improving the bandwidth while lowering the junction capacitance. The
gain of the detector is dependent on the feedback element (RF). The
bandwidth of the detector can be calculated using the following:
󰇛3󰇜
4,
where GBP is the amplifier gain bandwidth product and CDis the sum of
the junction capacitance, amplifier capacitance, and feedback
capacitance.

Extended InGaAs Biased Detector Chapter 6: Troubleshooting
Rev A, December 27, 2017 Page 11
Chapter 6 Troubleshooting
Problem Suggested Solutions
There is no signal response. Verify that the power is switched on and all
connections are secure.
Verify the proper terminating resistor is
installed if using a Voltage measurement
device.
Verify that the optical signal wavelength is
within the specified wavelength range.
Verify that the optical signal is illuminating
the detector active area.
Connect the DET to an oscilloscope without
a terminating resistor installed. Most general
purpose oscilloscopes will have a 1 MΩinput
impedance. For visible detectors, point the
detector toward a fluorescent light and verify
that a 60 Hz (50 Hz outside the US) signal
appears on the scope. If so the device
should be operating properly and the
problem may be with the light source or
alignment.
There is an AC signal
present when the unit is
turned off.
The detector has an AC path to ground even
with the switch in the OFF position. It is
normal to see an output response to an AC
signal with the switch in this state. However,
because the detector is unbiased, operation
in this mode is not recommended.
The output appears AC
coupled with long rise times
and the power switch ON.
This is usually an indication that the battery
level is low and needs to be changed. See
the Battery Check and Replacement Section.

Extended InGaAs Biased Detector Chapter 7: Specifications
Page 12 TTN134284-D02
Chapter 7 Specifications
All measurements are performed at 25 °C ambient temperature, unless stated
otherwise.
Electrical Specifications
Detector - InGaAs
Active Area - Ø 0.5 mm (0.2 mm2)
Wavelength Range λ900 to 2600 nm
Peak Wavelength λ
p
2300 nm
Peak Response2

( λ
p
) 1.3 A/W
Shunt Resistance Rsh 50 kΩ(Typ.)
Junction Capacitance CJ140 pF (Typ.)
Rise Time2,3,4 tr17 ns (Typ.)
NEP (λ
p
) - 1.0 x 10-12 W/√Hz (Typ.)
Bias Voltage VR1.8 V
Dark Current5 ID2 µA (Typ.)
20 µA (Max)
Output Current IOUT 0 to 5 mA
General
On/Off Switch Slide
Battery Check Switch Momentary Pushbutton
Output BNC (DC Coupled)
Package Size62.79" x 1.96" x 0.89"
(70.9 mm x 49.8 mm x 22.5 mm)
PD Surface Depth 0.09" (2.2 mm)
Weight 0.10 kg
Accessories SM1T1 Coupler
SM1RR Retainer Ring
Storage Temp -20 to 70 °C
Operating Temp 10 to 50 °C
Battery A23, 12 VDC, 40 mAh
Low Battery Voltage7(See Battery Check)
VOUT (Hi-Z) ~9 V
VOUT (50 Ω) ~170 mV
2Measured with a specified bias voltage of 1.8 V.
3Low battery voltage will result in slower rise times and decreased bandwidth.
4For a 50 ΩLoad
5Measured with a 1 MΩLoad
6Measured from the active area to the start of the threads on the housing body. The detector
active area surface is flush with the front of the housing body.
7Assumes the battery voltage drops below 9.6 V. The reverse protection diode generates a 0.6
V drop.

Extended InGaAs Biased Detector Chapter 7: Specifications
Rev A, December 27, 2017 Page 13
7.1. Response Curve
0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5
0.2
0.4
0.6
0.8
1.0
1.2
1.4
DET05D2 Responsivity
Responsivity (A/W)
Wavelength (nm)

Extended InGaAs Biased Detector Chapter 7: Specifications
Page 14 TTN134284-D02
7.2. Mechanical Drawing
Visit the web for a more detailed mechanical drawing.

Extended InGaAs Biased Detector Chapter 8: Certificate of Conformance
Rev A, December 27, 2017 Page 15
Chapter 8 Certificate of Conformance

Extended InGaAs Biased Detector Chapter 9: Regulatory
Page 16 TTN134284-D02
Chapter 9 Regulatory
As required by the WEEE (Waste Electrical and Electronic Equipment Directive)
of the European Community and the corresponding national laws, Thorlabs offers
all end users in the EC the possibility to return “end of life” units without incurring
disposal charges.
This offer is valid for Thorlabs electrical and electronic equipment:
Sold after August 13, 2005
Marked correspondingly with the crossed out
“wheelie bin” logo (see right)
Sold to a company or institute within the EC
Currently owned by a company or institute
within the EC
Still complete, not disassembled and not
contaminated
As the WEEE directive applies to self contained
operational electrical and electronic products, this
end of life take back service does not refer to other Thorlabs products, such as:
Pure OEM products, that means assemblies to be built into a unit by the
user (e.g. OEM laser driver cards)
Components
Mechanics and optics
Left over parts of units disassembled by the user (PCB’s, housings etc.).
If you wish to return a Thorlabs unit for waste recovery, please contact Thorlabs
or your nearest dealer for further information.
Waste Treatment is Your Own Responsibility
If you do not return an “end of life” unit to Thorlabs, you must hand it to a
company specialized in waste recovery. Do not dispose of the unit in a litter bin
or at a public waste disposal site.
Ecological Background
It is well known that WEEE pollutes the environment by releasing toxic products
during decomposition. The aim of the European RoHS directive is to reduce the
content of toxic substances in electronic products in the future.
The intent of the WEEE directive is to enforce the recycling of WEEE. A
controlled recycling of end of life products will thereby avoid negative impacts on
the environment.
Wheelie Bin Logo

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Chapter 10 Thorlabs Worldwide Contacts
For technical support or sales inquiries, please visit us at
www.thorlabs.com/contact for our most up-to-date contact information.
USA, Canada, and South America
Thorlabs, Inc.
sal[email protected]
[email protected]
Europe
Thorlabs GmbH
[email protected]
France
Thorlabs SAS
[email protected]
Japan
Thorlabs Japan, Inc.
[email protected]
UK and Ireland
Thorlabs Ltd.
[email protected]
[email protected]
Scandinavia
Thorlabs Sweden AB
[email protected]
Brazil
Thorlabs Vendas de Fotônicos Ltda.
[email protected]
China
Thorlabs China
[email protected]

www.thorlabs.com