
Si Switchable Gain Detector, OEM Chapter 6: Specifications
Rev B, June 15, 2021 Page 11
Chapter 6 Specifications
All performance specifications are typical, performed at 25 °C ambient
temperature, and assume a 50 Ωload, unless stated otherwise.
Performance Specifications2
0 dB Setting 40 dB Setting
Gain (Hi-Z) 1.51 x 103V/A ±2% Gain (Hi-Z) 1.51 x 105V/A ±2%
Gain (50 Ω) 0.75 x 103V/A ±2% Gain (50 Ω) 0.75 x 105V/A ±2%
Bandwidth311 MHz Bandwidth3 90 kHz
Noise (RMS) 268 μV Noise (RMS) 229 μV
NEP (@ p) 7.17 x 10-11 W/Hz NEP (@ p) 2.67 x 10-12 W/Hz
Offset ±8 mV (Typ.)
±12 mV (Max) Offset ±8 mV (Typ.)
±12 mV (Max)
10 dB Setting 50 dB Setting
Gain (Hi-Z) 4.75 x 103V/A ±2% Gain (Hi-Z) 4.75 x 105V/A ±2%
Gain (50 Ω) 2.38 x 103V/A ±2% Gain (50 Ω) 2.38 x 105V/A ±2%
Bandwidth31.4 MHz Bandwidth328 kHz
Noise (RMS) 195 μV Noise (RMS) 271 μV
NEP (@ p) 6.75 x 10-12 W/Hz NEP (@ p) 4.2 x 10-12 W/Hz
Offset ±8 mV (Typ.)
±12 mV (Max) Offset ±8 mV (Typ.)
±12 mV (Max)
20 dB Setting 60 dB Setting
Gain (Hi-Z) 1.5 x 104V/A ±2% Gain (Hi-Z) 1.5 x 106V/A ±5%
Gain (50 Ω) 0.75 x 104V/A ±2% Gain (50 Ω) 0.75 x 106V/A ±5%
Bandwidth3800 kHz Bandwidth39 kHz
Noise (RMS) 219 μV Noise (RMS) 423 μV
NEP (@ p) 3.36 x 10-12 W/Hz NEP (@ p) 6.24 x 10-12 W/Hz
Offset ±8 mV (Typ.)
±12 mV (Max) Offset: ±8 mV (Typ.)
±12 mV (Max)
30 dB Setting 70 dB Setting
Gain (Hi-Z) 4.75 x 104V/A ±2% Gain (Hi-Z) 4.75 x 106V/A ±5%
Gain (50 Ω) 2.38 x 104V/A ±2% Gain (50 Ω) 2.38 x 106V/A ±5%
Bandwidth3260 kHz Bandwidth33 kHz
Noise (RMS) 222 μV Noise (RMS) 1.22 mV
NEP (@ p) 2.83 x 10-12 W/Hz NEP (@ p) 7.88 x 10-12 W/Hz
Offset ±8 mV (Typ.)
±12 mV (Max) Offset ±8 mV (Typ.)
±12 mV (Max)
2The PDAPC2 has a 50 Ωseries terminator resistor (i.e. in series with amplifier output). This
forms a voltage divider with any load impedance (e.g. 50 Ωload divides signal in half).
3Tested at 650 nm wavelength. For NIR wavelengths, the rise time of the photodiode element will
become slower which may limit the effective bandwidth of the amplified detector.