Atmel AT91SAM9 Installation and operating instructions

NAND Flash Support in AT91SAM9
Microcontrollers
1. Scope
The purpose of this application note is to introduce the NAND Flash technology and to
describe how to interface NAND Flash memory to Atmel®AT91SAM9 ARM®Thumb®-
based Microcontrollers that do not feature a NAND Flash Controller. The NAND Flash
logic is driven by the Static Memory Controller on the NCS3 address space.
Sample code is provided the associated zip file, Basic NAND Source Code.zip; the
source code is based on the product libV3.
2. NAND Flash Overview
2.1 General Overview
NAND Flash provides a cost effective alternative to hard drives, especially for portable
and handheld systems. The performance, pricing, and memory size options make it
optimal for storage applications (pictures, audio files, etc.).
The NAND Flash used to illustrate this interface is the K9F2G08U0M, manufactured
by Samsung®Electronics. Figure 2-1 shows the memory organization of this device.
Figure 2-1. K9F2G08U0M Organization
AT91 ARM
Thumb
Microcontrollers
Application
Note
6255B–ATARM–26-Jun-09

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Application Note
2.2 NAND Flash vs. NOR Flash
The most important item for memories is the cost per bit which depends on memory cell area per
bit. The cell area of NAND Flash is smaller than that of NOR Flash, making the NAND Flash
more cost effective than NOR Flash.
The first significant difference between NAND and NOR Flash is the hardware interface.
2.2.1 Hardware Interface
NOR Flash has a fully memory-mapped random access interface similar to a RAM, with dedi-
cated address lines and data lines making it “bootable”.
NAND Flash uses a multiplexed I/O interface and additional control signals. It is controlled by
sending commands and addresses through an 8-bit or 16-bit bus to an internal command and
address register.
NOR Flash random-access interface typically composed of 41 pins:
– CE# - chip enable
– WE# - write enable
– OE# - output enable
– D[15:0] - data bus
– A[20:0] - address bus
– WP# - write protect
NAND Flash I/O device-type interface composed of up to 24 pins:
– CE# - chip enable
– WE# - write enable
– RE# - read enable
– CLE - command latch enable
– ALE - address latch enable
– I/O[7:0] or I/O[15:0] - data bus
– WP# - write protect
– R/B# - ready / busy
– RE - Read enable
2.2.2 Array Architecture
NOR Flash is divided into blocks which typically contain many 16-bit wide words. Random
access to stored data words is achieved by placing the selected word address on the address
bus and then reading that data off the data bus. Erase operations are managed at the block level
and words can be programmed after a block has been erased.
NAND Flash is also divided into blocks which contain many pages instead of words (2K +64
bytes). Read and program operations take place on a per-page basis whereas erase operations
takes place on a block basis.
To read or write from NAND Flash, a command sequence is issued to select a block and a page.
After this selection, the entire page can be read or written.

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Application Note
NAND Flash typically contains blocks that contain errors and cannot be used. A check must be
done by software to list and maintain a table of bad blocks. Data integrity is achieved by using
hardware or software techniques, such as ECC, that check and correct bad data.
2.2.3 Performances
Further differences between NOR and NAND Flash can be found in read/write performances.
Table 2-1 shows random access time for NOR Flash specified at 0.09 µs, whereas NAND ran-
dom access is significantly slower — 25 µs — for the first byte. Once the initial access has been
made, however, the remaining 2,111 bytes are shifted out of NAND at only 30 ns per byte. This
results in a bandwidth of more than 23 Mb/s for 8-bit I/Os or 37 Mb/s for 16-bit I/Os.
The real benefits for NAND Flash can be found in the faster program and erase times, since
NAND provides over five megabytes per second of sustained write performance. The block
erase times are an impressive 2 ms for NAND versus 200 ms for NOR.
2.2.4 Conclusion
Table 2-2 summarizes NAND/NOR advantages and disadvantages.
Clearly, NAND Flash has several significant positive attributes. The one negative attribute is that
it is not well-suited for direct random access.
Table 2-1. Differences in Performance
Characteristics
NAND Flash
K9F2G08U0M
NOR Flash
AT49BV16x4-90
Random access read
25 µs (first byte)
30 ns each for remaining 2111
bytes
0.09 µs
Sustained read speed
(sector basis) 37 Mbytes/s 11 Mbytes/s
Random write speed 300 µs/2,112 bytes 20 µs / bytes
Sustained write speed (sector
basis) 5 Mbytes/s 0.05 Mbytes/s
Erase block size 128 Kbytes 64 Kbytes
Erase cycles 100,000 to 1,000,000 10,000 to 100,000
Erase time per block 2 ms 200 ms
Table 2-2. NAND/NOR Comparison
NAND NOR
Advantages
Fast writes
Fast erases
Lower bit cost
Higher density
Random access
Byte writes possible
Disadvantages
Slow random access
Byte writes difficult
Bad blocks management and ECC
required
Slow writes
Slow erase
Applications
File (disk) applications
Voice, data, video recorder
Any large sequential data
Execute directly from non volatile
memory

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6255B–ATARM–26-Jun-09
Application Note
NAND is available in large capacities and is the lowest cost Flash memory available today.
NAND is used in virtually all removable cards for cost/density reasons: USB Cards, Memory
Stick, MMC Multimedia Card, SD Secure Digital, CF Compact Flash.
3. Bad Block Management and Error Corrected Code (ECC)
3.1 Definition of “Bad Block”
By default, NAND devices contain invalid blocks which have one or more invalid bits.
Furthermore, since the first memory block (physical block address 00h) in NAND devices is
guaranteed to be free of defects (up to 1,000 PROGRAM/ERASE cycles), the first 8 Kb of Flash
memory can safely be used for system bootstrapping functions.
3.2 Software Considerations
To avoid writing to and reading from bad memory blocks, system software must create a map of
invalid memory blocks. If the application code executes from RAM rather than Flash memory,
system software bad-block mapping is only necessary at boot time and during Flash storage
updates.
All device locations are erased (FFh for X8, FFFFh for X16) except locations where the invalid
block information is written prior to shipping. The invalid block status is defined by the 1st byte
(X8 device) or 1st word (X16 device) in the spare area.
The 1st or 2nd page of every invalid block has non-FFh(X8) or non-FFFFh(X16) data at the col-
umn address of 2048 (X8 device) or 1024 (X16 device). Since the invalid block information is
also erasable in most cases, it is impossible to recover the information once it has been erased.
Therefore, the system must be able to recognize the invalid block(s) based on the original invalid
block information and create the invalid block table via the flow chart in Figure 3-1.
Figure 3-1. Bad Block Recognition Flow Chart

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Application Note
Important Note: Any intentional erasure of the original invalid block information is prohibited.
3.3 ECC
NAND devices are subject to data failures that occur during device operation. To ensure data
read/write integrity, system error-checking and correction (ECC) algorithms must be imple-
mented. Depending on the AT91 product, the ECC algorithm must be calculated by software or
can be generated by the embedded hardware ECC controller. The ECC controller is capable of
single bit error correction and 2-bit random detection. When NAND has more than 2 bits of
errors, the data cannot be corrected. This controller allows ECC management without CPU inter-
vention and thus improves the total bandwidth of the system.
4. NAND Flash Signals
4.1 Bus Operation
The bus on NAND Flash devices is internally multiplexed. Data I/O, addresses, and commands
all share the same pins. I/O pins. I/O[15:8] are used only for data in the x16 configuration.
Addresses and commands are always supplied on I/O[7:0].
The command sequence normally consists of a command latch cycle, an ADDRESS LATCH
cycle, and a DATA cycle — either READ or WRITE.
4.2 Control Signals
The signals CE#, WE#, RE#, CLE and ALE control Flash device READ and WRITE operations.
CE# is used to enable the device. When CE# is low and the device is not in the busy state, the
Flash memory accepts command, data, and address information.
When the device is not performing an operation, the CE# pin is typically driven HIGH and the
device enters standby mode. The memory enters standby if CE# goes HIGH while data is being
transferred and the device is not busy.
A subset of NAND Flash supports the CE# “Don’t Care” operation allowing the NAND Flash to
reside on the same asynchronous memory bus as other Flash or SRAM devices. Other devices
on the memory bus can then be accessed while the NAND Flash is busy with internal opera-
tions. This capability is important for designs that require multiple memory devices on the same
bus.
4.3 Commands (ALE = 0, CLE = 1)
All the NAND operations (except READ STATUS and RESET commands) consist of a com-
mand write cycle followed by address write cycle. The READ STATUS command does not have
an address write cycle. The command is transferred into the NAND command register followed
by the start address, for the read or program operation, latched into the address register.
Commands are written to the command register on the rising edge of WE# when:
• CE# and ALE are low
• CLE is high
Commands are input on I/O[7:0] only. For devices with a x16 interface, I/O[15:8] must be written
with zeros when issuing a command.

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Application Note
4.4 Address (ALE = 1, CLE = 0)
Addresses are written to the address register on the rising edge of WE# when:
• CE# and CLE are low
• ALE is high
Addresses are input on I/O[7:0] only. For devices with a x16 interface, I/O[15:8] must be written
with zeros when issuing an address. Generally all five ADDRESS cycles are written to the
device.
4.5 Data (ALE = 0, CLE = 0)
Data is written to the data register on the rising edge of WE# when CE#, CLE, and ALE are low.
Data is input on I/O[7:0] for x8 devices, and I/O[15:0] on x16 devices.
4.6 Ready / Busy
The R/B# output provides a hardware method of indicating the completion of a PRO-
GRAM/ERASE/READ operation. The signal is typically high, and transitions to low after the
appropriate command is written to the device. A dedicated PIO should be assigned to this signal
with a pull-up resistor for proper operation. Alternatively, the READ STATUS command can be
used by the software.
4.7 Example
The following waveforms shows the successive accesses: COMMAND Latch, ADDRESS Latch
and DATA Output with a “CE don’t Care” NAND. Notice that no command can be sent to the
NAND Flash during tR, because it is busy.
Figure 4-1. Page READ Operation

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Application Note
5. AT91 EBI NandFlash Logic
The NAND Flash logic is driven by the Static Memory Controller (SMC) on the NCS3 address
space. Programming the CS3A field in the EBI_CSA Register in the Bus Matrix User Interface to
the appropriate value enables the NAND Flash logic. For details on this register, refer to the Bus
Matrix User Interface section in the product datasheet. Access to an external NAND Flash
device is then made by accessing the address space reserved to NCS3 (i.e., between
0x40000000 and 0x4FFF FFFF).
The NAND Flash Logic drives the read and write command signals of the SMC on the NANDOE
and NANDWE signals when the NCS3 signal is active.(refer to the Static Memory Controller
section in the product datasheet).
The address latch enable and command latch enable signals on the NAND Flash device are
driven by address bits A22 and A21 of the EBI address bus.The command, address or data
words on the data bus of the NAND Flash device are distinguished by using their address within
the NCS3 address space. The chip enable (CE) signal of the device and the ready/busy (R/B)
signals are connected to PIO lines.
Two NAND Flash types exists, those who are “CE don’t care” and those who are not.
For “CE don’t care” NAND, the chip enable state is don’t care during the busy period preceding
the data read cycle. Thus allowing this flash to be connected to active memory buses such as
the AT91 memory bus.
For standard NAND, the CE signal remains asserted even when NCS3 is not selected, prevent-
ing the device from returning to standby mode. In this case, a PIO line should be dedicated to
drive the Chip Enable signal.
Unlike the AT91SAM9261, where A21 and A22 are not specifically dedicated to NAND flash
ALE and CLE signals, on the AT91SAM9260 A21/ALE and A22/CLE are the signals mandatory
to drive the NAND flash and ECC controller. Another combination of addresses prevent using
the ECC controller with the NAND Flash.
Notes: 1. Any free PIO can be used for this purpose
2. For standard NAND
3. For AT91SAM9261 the address bit A21 is arbitrarily dedicated to CLE
4. For AT91SAM9261 the address bit A22 is arbitrarily dedicated to ALE
Table 5-1. EBI Signals Example for AT91SAM9261
Name Function Type Active Level
NANDCS NAND Flash Chip Select Line Output Low
NANDOE NAND Flash Output Enable Output Low
NANDWE NAND Flash Write Enable Output Low
CLE(A21) (3) Command Latch Enable Output High
ALE(A22) (4) Address Latch Enable Output High
PIOx/CE Chip Enable (1)(2) Output Low
PIOy/RDY/BSY Ready/Busy (1) Input Low

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Application Note
Notes: 1. Any free PIO can be used for this purpose
2. For standard NAND
Figure 5-1. “CE don’t care” and Standard NAND Flash Application Example
Table 5-2. EBI Signals Example for AT91SAM9260
Name Function Type Active Level
NANDCS NAND Flash Chip Select Line Output Low
NANDOE NAND Flash Output Enable Output Low
NANDWE NAND Flash Write Enable Output Low
A22/CLE Command Latch Enable Output High
A21/ALE Address Latch Enable Output High
PIOx/CE Chip Enable (1)(2) Output Low
PIOy/RDY/BSY Ready/Busy (1) Input Low
Table 5-3. ALE/CLE Management
ALE CLE
AT91SAM9261 Memory
Address Offset
AT91SAM9260 Memory
Address Offset NAND Register Selected
0 0 0x000000 0x000000 DATA register
0 1 0x200000 0x400000 COMMAND register
1 0 0x400000 0x200000 ADDRESS register
1 1 0x600000 0x600000 Undefined (Don’t use)
D[7:0]
ALE
NCS7/NANDWE
NCS6/NANDOE NOE
NWE
A[22:21]
CLE
AD[7:0]
PIO R/B
EBI
CE
"CE don't Care"
NAND Flash
NCS3/NANDCS
D[7:0]
ALE
NCS7/NANDWE
NCS6/NANDOE NOE
NWE
A[22:21]
CLE
AD[7:0]
PIO R/B
EBI
CE
NAND Flash
PIO
NCS3/NANDCS Not Connected

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Application Note
6. AT91 System Initialization for a K9F2G08U0M Device
6.1 Clocks
The system is running at full speed, this means 198 MHz for the processor and 99 MHz for the
Bus. The EBI NCS3 is to be assigned for NAND Flash usage.
6.2 PIOs
6.2.1 Standard NAND
Two PIO lines are needed for CE and RDY/BSY. NANDOE (PC0) and NANDWE (PC1) are to
be configured for NAND Flash usage.
Note: 1. Any free PIO can be used for this purpose
6.2.2 “CE don’t care” NAND
One PIO line only is needed, for RDY/BSY. NCS3 has the NANDCS function. On the
AT91SAM9260 the NCS3 is multiplexed with a PIO line allowing standard NAND Flash and “CE
don’t care” device support without any hardware modification.
Note: 1. Any free PIO can be used for this purpose
Table 6-1. System Configuration
Description Settings Register/field Value
System
PLL frequency 198 MHz PMC_PLLAR 0x20603F09
Processor / Bus Clock 198 / 99 MHz PMC_MCKR 0x00000102
EBI Chip Select Assignment NAND EBI_CSA
EBI_CS3A 0x8
Table 6-2. Peripheral Configuration for Standard NAND on AT91SAM9261
Description Settings AT91 libV3 Function
NANDOE and NANDWE are
respectively PC0 and PC1 Output
AT91F_PIO_CfgPeriph(AT91C_BASE_PIOC, (AT91C_PC0_SMOE
| AT91C_PC1_SMWE), 0);
PC14 is CE (1) Output AT91F_PIO_CfgOutput(AT91C_BASE_PIOC, AT91C_PIO_PC14);
PC15 is RDY/BSY (1) Input AT91F_PIO_CfgInput(AT91C_BASE_PIOC, AT91C_PIO_PC15);
Enable PIO clock (1) AT91F_PIOC_CfgPMC ();
Table 6-3. Peripheral Configuration for “CE don’t Care” NAND on AT91SAM9260
Description Settings AT91 libV3 function
NCS3 is CE Output
AT91F_PIO_CfgPeriph(AT91C_BASE_PIOC,
AT91C_PC14_NCS3_NANDCS,0);
PC13 is RDY/BSY (1) Input AT91F_PIO_CfgInput(AT91C_BASE_PIOC, AT91C_PIO_PC13);
Enable PIO clock (1) AT91F_PIOC_CfgPMC ();

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Application Note
6.3 SMC Timings
The K9F2G08U0M is a 256 MB device connected with an 8-bit data bus width.
An accurate one-to-one comparison is necessary between NandFlash and SMC waveforms for
a complete SMC configuration. Figure 6-1 and Figure 6-2 show two cases that highlight all the
required timings.
Figure 6-1. COMMAND LATCH and ADDRESS LATCH Cycle
Figure 6-2. SERIAL ACCESS Cycle after READ
These timings are summarized in Table 6-4.
ALE/CLE
NCS
NWE_SETUP NWE_PULSE NWE_HOLD
NWE
NCS_WR_SETUP NCS_WR_PULSE NCS_WR_HOLD
NWE_CYCLE
D[31:0]
NCS
NRD_SETUP NRD_PULSE NRD_HOLD
NRD
D[31:0]
NCS_RD_SETUP NCS_RD_PULSE NCS_RD_HOLD
NRD_CYCLE

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Application Note
As CLE and ALE are address lines (A21, A22), an additional setup timing is required to respect
tAR (10 ns) and tCLR (10 ns) on STATUS or RANDOM DATA READ Cycle.
Table 6-4. NAND Flash Timings vs. SMC Configuration
Timing Name
Value (ns)
Min / Max
SMC Description for “CE don’t Care”
NAND
SMC Description for Standard
NAND
Value @
100 MHz
(cycles)
Setup
tCLS 25 NWE Setup + NWE Pulse N/A - CE is a PIO line 3
tALS 25 NWE Setup + NWE Pulse N/A - CE is a PIO line 3
tCS 35 NWE Setup + NWE Pulse N/A - CE is a PIO line 4
tDS 20 NWE Setup + NWE Pulse NWE Setup + NWE Pulse 2
tCEA 45 Not programmable Not programmable
tREA 30 Not programmable Not programmable
tRR 20 managed by software managed by software
Hold
tCLH 10 NWE Hold NWE Hold 1
tALH 10 NWE Hold NWE Hold 1
tCH 10 NWE Hold N/A - CE is a PIO line 1
tDH 10 Data Float Time Data Float Time 1
tOH 15 Data Float Time Data Float Time 2
tREH 15 NRD Cycle - NRD Pulse NRD Cycle - NRD Pulse 2
Pulse
tWP 25 NWE pulse length NWE pulse length 3
tRP 25 NRD pulse length NRD pulse length 3
tWC 45 NWE cycle NWE cycle 5
tRC 50 NRD cycle NRD cycle 5

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Application Note
To fit these requirements the values to program in SMC are:
• NRD_SETUP = NWE_SETUP = 1
• NRD_CYCLE = NWE_CYCLE = 5
• NRD_PULSE = NWE_PULSE = 3
• Data Float Time = 2
Therefore all the timings are realized:
• NWE_HOLD = NRD_CYCLE - NRD_PULSE - NRD_SETUP = 1
• NRD_CYCLE - NRD_PULSE = 2
• NWE_SETUP + NWE_PULSE = 4
Table 6-5 gives SMC register configurations, other fields keep the reset values.
Table 6-5. SMC NCS3 Configuration
Description Settings Register/field Value
NWE and NRD Setup 1 cycle SMC_SETUP[3] 0x01010101
NRD and NWE Pulse length 3 cycles SMC_PULSE[3] 0x03030303
NRD and NWE Cycle length 5 cycles SMC_CYCLE[3] 0x05050505
Chip Select Control SMC_CTRL[3] 0x00020003
Read Mode NRD READ_MODE 0x1
Write Mode NWE WRITE_MODE 0x2
NWAIT action disable EXNW_MODE 0
Databus Width 8 (bits) DBW 0
Data Float Time 2 (cycles) TDF_CYCLES 2

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Application Note
7. NAND Flash Connection Example on AT91SAM9260
7.1 8-bit NAND Flash
7.1.1 Hardware Configuration
7.1.2 Software Configuration
The following configuration must be carried out:
• Assign the EBI CS3 to the NAND Flash by setting the bit EBI_CS3A in the EBI Chip Select
Assignment Register located in the bus matrix memory space
• Reserve A21/A22 for CLE/ALE functions. Address and Command Latches are controlled
respectively by setting to 1 the address bit A21 and A22 during accesses.
• Configure a PIO line as an input and enable the clock of this PIO to manage the Ready/Busy
signal.
• Configure Static Memory Controller CS3 Setup, Pulse, Cycle and Mode depending on NAND
Flash timings, the data bus width and the system bus frequency.
D6
D0
D3
D4
D2
D1
D5
D7
NANDOE
NANDWE
(ANY PIO)
(ANY PIO)
ALE
CLE
D[0..7]
3V3
3V3
2 Gb
TSOP48 PACKAGE
U1 K9F2G08U0MU1 K9F2G08U0M
WE
18
N.C
6
VCC 37
CE
9
RE
8
N.C
20
WP
19
N.C
5
N.C
1
N.C
2
N.C
3
N.C
4
N.C
21
N.C
22
N.C
23
N.C
24
R/B
7
N.C
26
N.C 27
N.C 28
I/O0 29
N.C 34
N.C 35
VSS 36
PRE 38
N.C 39
VCC 12
VSS 13
ALE
17
N.C
11 N.C
10
N.C
14
N.C
15
CLE
16
N.C
25
N.C 33
I/O1 30
I/O3 32
I/O2 31
N.C 47
N.C 46
N.C 45
I/O7 44
I/O6 43
I/O5 42
I/O4 41
N.C 40
N.C 48
R2 10KR2 10K
C2
100NF
C2
100NF
R1 10K R1 10K
C1
100NF
C1
100NF

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Application Note
7.2 16-bit NAND Flash
7.2.1 Hardware Configuration
7.2.2 Software Configuration
The software configuration is the same as for 8-bit NAND Flash except the data bus width pro-
grammed in the mode register of the Static Memory Controller.
8. NAND Flash Access on AT91SAM9260
8.1 Boot on NAND Flash
Each AT91SAM9 product embeds a Boot Program that integrates different programs permitting
download and/or upload into the different memories of the product.
For the NAND Flash, an initialization phase is done and the NAND Flash Boot program is then
executed.
Refer to the section “AT91SAM Boot Program” of the product datasheet for more details.
8.1.1 NAND Flash Initialization
The following actions compose the initialization phase of the “CE don’t Care” NAND.
• NAND Flash logic is enabled on NCS3 through EBI_CSA.
• NAND Flash timings are programmed with SMC_SETUP3, PULSE3, CYCLE3 and MODE3
SMC registers.
• PC13 PIO line is dedicated to handle NAND R/B#.
D6
D0
D3
D4
D2
D1
D5
D7
D14
D8
D11
D12
D10
D9
D13
D15
NANDOE
NANDWE
(ANY PIO)
ALE
CLE
D[0..15]
(ANY PIO)
3V3
3V3
2 Gb
TSOP48 PACKAGE
R1 10K R1 10K
R2 10KR2 10K
C2
100NF
C2
100NF
C1
100NF
C1
100NF
U1 MT29F2G16AABWP-ETU1 MT29F2G16AABWP-ET
WE
18
N.C
6
VCC 37
CE
9
RE
8
N.C
20
WP
19
N.C
5
N.C
1
N.C
2
N.C
3
N.C
4
N.C
21
N.C
22
N.C
23
N.C
24
R/B
7
I/O0 26
I/O8 27
I/O1 28
I/O9 29
N.C
34
N.C
35
N.C 36
PRE 38
N.C 39
VCC 12
VSS 13
ALE
17
N.C
11 N.C
10
N.C
14
N.C
15
CLE
16
VSS 25
I/O11 33
I/O2 30
I/O3 32
I/O10 31
I/O15 47
I/O7 46
I/O14 45
I/O6 44
I/O13 43
I/O5 42
I/O12 41
I/O4 40
VSS 48

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Application Note
• Another PIO line must be declared to handle CE# on standard devices (not “CE don’t Care”).
• PC14 PIO line is configured for an NCS3_NANDCS usage.
• The corresponding PIO Clock is started.
• A NAND Flash identification is done on NCS3 memory space.
• A NAND structure is created and filled-in with Flash ID relevant data.
• Data bus width is modified depending on the NAND Flash type.
Once completed, the system is ready to access the NAND Flash with best performances.
A software package that performs this configuration is provided with this Application Note.
8.1.2 NAND Flash Boot
First, it looks for a boot.bin file in the root directory or in the FIRMWARE directory of a FAT12/16
formatted NAND Flash. If such a file is found, code is downloaded into the internal SRAM. This
is followed by a remap and a jump to the first address of the SRAM.
If the NAND Flash is not formatted, the NAND Flash Boot program looks for a sequence of eight
valid ARM exception vectors. If such a sequence is found, code is downloaded into the internal
SRAM. This is followed by a remap and a jump to the first address of the SRAM.
8.1.3 NAND Flash Waveforms
Figure 8-1. CE During Two Page Read on Standard NAND

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Application Note
Figure 8-2. CE During Two Page Read on “CE don’t care” NAND
8.1.4 NAND Flash and SAM-BA®
SAM-BA allows the user to read, write, erase and verify NAND Flash devices through RS232 or
USB interfaces. This feature is not supported on all the AT91SAM9 Microcontrollers (Refer to
SAM Boot Assistant (SAM-BA) User Guide for a more detailed description, lit° 6132.
8.1.4.1 Management of “Bad Blocks”
As a NAND Flash Memory may contain invalid blocks, an Invalid Block Management algorithm is
implemented. If an invalid block is detected, it is skipped and data are written in the next block.
The SAM-BA application marks a NAND Flash block as invalid by setting the “BadBlock Info”
byte in the 8-byte Invalid Block Information structure to a value different from 0xFF. This is per-
formed for the first two pages of each bad block.
The same principle has to be implemented in a user application in order to read data from a
NAND Flash memory written by the SAM-BA application.
8.1.4.2 File Operations
The memory download area provides a simple way to upload and download data.
Files can be sent and received and the target’s memory content can be compared with a file on
the PC.
This area also gives access to some specific scripts such as “Enable NAND” that performs the
initialization phase necessary before any file operations, and “Erase NAND” that performs a full
erase of the device.

17
6255B–ATARM–26-Jun-09
Application Note
Revision History
Doc. Rev Date Comments
Change
Request Ref.
6255A 09-Oct-06 First issue
6255B 16-Jun-09 page 1: AT91SAM -> AT91SAM9
Table 6-5 on page 12: NAND Flash support App Note: SMC Timings are not correct
3906
5582

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