Epson S1F77B01 User manual

Rev.1.3
SEIKO EPSON CORPORATION
Power Supply IC
S1F77B01
Technical Manual

NOTICE
No part of this material may be reproduced or duplicated in any form or by any means without the written
permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.
Seiko Epson does not assume any liability of any kind arising out of any inaccuracies contained in this material
or due to its application or use in any product or circuit and, further, there is no representation that this material is
applicable to products requiring high level reliability, such as, medical products. Moreover, no license to any
intellectual property rights is granted by implication or otherwise, and there is no representation or warranty that
anything made in accordance with this material will be free from any patent or copyright infringement of a third
party. This material or portions thereof may contain technology or the subject relating to strategic products
under the control of the Foreign Exchange and Foreign Trade Law of Japan and may require an export license
from the Ministry of International Trade and Industry or other approval from another government agency.
All other product names mentioned herein are trademarks and/or registered trademarks of their respective
companies.
©SEIKO EPSON CORPORATION 2006, All rights reserved.

Configuration of product number
zDEVICES
S1 F 77B01 B 0C00 00
Packing specifications
Specifications
Shape
(B:WCSP, Y:SOT)
Model number
Model name
(F : Power Supply)
Product classification
(S1:Semiconductors)

S1F77B01 Technical Manual (Rev.1.3) EPSON i
CONTENTS
1. DESCRIPTION.................................................................................................................................1
2. FEATURES ......................................................................................................................................1
3. PACKAGE........................................................................................................................................1
4. APPLICATION .................................................................................................................................1
5. BLOCK DIAGRAM...........................................................................................................................2
6. SELECTION GUIDE.........................................................................................................................3
7. PIN ASSIGNMENT...........................................................................................................................3
8. MARKING ........................................................................................................................................4
9. MARKING ........................................................................................................................................5
10. PIN DESCRIPTION..........................................................................................................................6
11. ABSOLUTE MAXIMUM RATINGS ..................................................................................................6
12. TIMING CHARTS AND RECOMMENDED CIRCUIT DIAGRAMS...................................................7
13. ELECTRICAL CHARACTERISTICS, DELAY CIRCUIT BUILT-IN PRODUCTS..............................8
14. CHARACTERISTIC MEASURING CIRCUITS.................................................................................9
15. DIMENSIONS.................................................................................................................................12
16. CHARACTERISTIC EXAMPLE .....................................................................................................14

1. DESCRIPTION
S1F77B01 Technical Manual (Rev.1.3) EPSON 1
1. DESCRIPTION
The S1F77B01 is a CMOS detector that runs at superlow consumption current 350nA (Typ.).
The detecting voltage can be selected in the range from 1.5V to 4.6V which is set to high accuracy ±2.0% in
0.1V steps. The power voltage is allowable in the range of low voltage 0.9 to 5.5V.
This detector adopts a compact package, which is available in a compact mobile device.
2. FEATURES
• Superlow power consumption: 350nA (VDD=3.0V, Typ.)
• Range of detecting voltage: 1.5 to 4.6V (in 0.1V steps)
• Accuracy of detecting voltage: ±2.0%
• Hysteresis characteristics: 5.0% Typ.
• Temperature characteristics of detecting voltage: ±100 ppm/°C (Typ.)
• Output type: CMOS, Nch open drain
3. PACKAGE
SOT23 5pin
WCSP 4pin
4. APPLICATION
• Microcomputer and logic circuit resetting
• Battery checker
• Level discriminator
• Waveform rectifier circuit
• Backup power switching circuit
• Power failure detector
• Overcurrent protection circuit

5. BLOCK DIAGRAM
2 EPSON S1F77B01 Technical Manual (Rev.1.3)
5. BLOCK DIAGRAM
zCMOS output
zNch open drain output
Note: SOT23 package product only; otherwise, a product with DS pin set to NC
The DS pin must be fixed to “LOW” outside the IC.
VOUT
VDD
VSS
Delay circuit
VREF
DS*
VOUT
VDD
VSS
Delay circuit
VREF
DS*

6. SELECTION GUIDE
S1F77B01 Technical Manual (Rev.1.3) EPSON 3
6. SELECTION GUIDE
S1F77B01 ** * *0* *
a bcd e
a Package type
SOT235PIN “Y”
WCSP4PIN “B”
b Indicates a value that is ten times the detecting voltage.
c For CMOS output, delay 50ms “C”
For CMOS output, delay 100ms “D”
For CMOS output, delay 200ms “E”
For Nch open drain output, delay 50ms “L”
For Nch open drain output, delay 100ms “M”
For Nch open drain output, delay 200ms “N”
d Fixed to 0 in this IC.
e Taping form
TRtype “0R”
7. PIN ASSIGNMENT
DS
1 3
5
VSS
VDD VOUT
4
2
NC
DS
1 2
3
VSS
VDD
4
VOUT
SOT23 5PIN
WCSP 4PIN
Top View

8. MARKING
4 EPSON S1F77B01 Technical Manual (Rev.1.3)
8. MARKING
SOT235PIN WCSP4PIN
CMOS
Delay time 50ms Delay time 100ms Delay time 200ms
Vdet-
Option a b a b a b
1.5V B 5 B 5 B
_
5
1.6V B 6 B 6 B
_
6
1.7V B 7 B 7 B
_
7
1.8V B 8 B 8 B
_
8
1.9V B 9 B 9 B
_
9
2.0V J 0 J 0 J
_
0
2.1V J 1 J 1 J
_
1
2.2V J 2 J 2 J
_
2
2.3V J 3 J 3 J
_
3
2.4V J 4 J 4 J
_
4
2.5V J 5 J 5 J
_
5
2.6V J 6 J 6 J
_
6
2.7V J 7 J 7 J
_
7
2.8V J 8 J 8 J
_
8
2.9V J 9 J 9 J
_
9
3.0V J A J A J
_
A
3.1V J B J B J
_
B
3.2V J C J C J
_
C
3.3V J D J D J
_
D
3.4V J E J E J
_
E
3.5V J F J F J
_
F
3.6V J G J G J
_
G
3.7V J H J H J
_
H
3.8V J J J J J
_
J
3.9V J K J K J
_
K
4.0V J L J L J
_
L
4.1V J M J M J
_
M
4.2V J N J N J
_
N
4.3V J P J P J
_
P
4.4V J Q J Q J
_
Q
4.5V J R J R J
_
R
4.6V J S J S J
_
S
a b c d e
1 2 3
4
5
ab
cd
: Product code
: Lot code
e
12
34
ab
cd
: Product code
: Lot code
abc
d
Top View

9. MARKING
S1F77B01 Technical Manual (Rev.1.3) EPSON 5
9. MARKING
SOT235PIN WCSP4PIN
Nch open drain
Delay time 50ms Delay time 100ms Delay time 200ms
Vdet-
Option a b a b a b
1.5V B 5 B 5 B
_
5
1.6V B 6 B 6 B
_
6
1.7V B 7 B 7 B
_
7
1.8V B 8 B 8 B
_
8
1.9V B 9 B 9 B
_
9
2.0V J 0 J 0 J
_
0
2.1V J 1 J 1 J
_
1
2.2V J 2 J 2 J
_
2
2.3V J 3 J 3 J
_
3
2.4V J 4 J 4 J
_
4
2.5V J 5 J 5 J
_
5
2.6V J 6 J 6 J
_
6
2.7V J 7 J 7 J
_
7
2.8V J 8 J 8 J
_
8
2.9V J 9 J 9 J
_
9
3.0V J A J A J
_
A
3.1V J B J B J
_
B
3.2V J C J C J
_
C
3.3V J D J D J
_
D
3.4V J E J E J
_
E
3.5V J F J F J
_
F
3.6V J G J G J
_
G
3.7V J H J H J
_
H
3.8V J J J J J
_
J
3.9V J K J K J
_
K
4.0V J L J L J
_
L
4.1V J M J M J
_
M
4.2V J N J N J
_
N
4.3V J P J P J
_
P
4.4V J Q J Q J
_
Q
4.5V J R J R J
_
R
4.6V J S J S J
_
S
a b c d e
1 2
3
4
5
ab
cd
: Product code
: Lot code
e
12
34
ab
cd
: Product code
: Lot code
abc
d
Top View

10. PIN DESCRIPTION
6 EPSON S1F77B01 Technical Manual (Rev.1.3)
10. PIN DESCRIPTION
For SOT-23-5
Pin No. Pin Name Function
1 DS Fixed to “LOW”.
2 VSS GND pin.
3 NC No connection
4 VOUT Voltage detection output pin
5 VDD Power input pin
For WCSP
Pin No. Pin Name Function
1 DS Fixed to “LOW”.
2 VSS GND pin.
3 VDD Voltage output pin
4 VOUT Power detection output pin
11. ABSOLUTE MAXIMUM RATINGS
(Ta=25°C RL=∞unless otherwise specified)
Item Symbol Rating Unit
Power voltage VDD-VSS 7.0 V
Nch open drain output VSS-0.3V to 7.0
Output voltage CMOS output VOUT VSS-0.3V to VDD+0.3V V
Output current IOUT 20 mA
SOT23 300 mW
Allowable dissipation PDWCSP 100 mW
Guaranteed operating temperature range Topr -40 to +85 °C
Storage temperature range Tstg -40 to +125 °C
Note: To stabilize the IC, insert the decoupling capacitor between VDD and VSS.

12. TIMING CHARTS AND RECOMMENDED CIRCUIT DIAGRAMS
S1F77B01 Technical Manual (Rev.1.3) EPSON 7
12. TIMING CHARTS AND RECOMMENDED CIRCUIT DIAGRAMS
zCMOS
zNch open drain
Hysteresis width
td
VDD
VSS
DS VOUT
V
Recommended circuit diagram
VSS
Output
voltage
Power
voltage
VDD
Release voltage
VDET+
Detecting voltage
VDET-
Min. operating
voltage
R
470kΩ
td
VDD
VSS
DS VOUT
V
Recommended circuit diagram
VSS
Output
voltage
Power
voltage
VDD
Release voltage
VDET+
Detecting voltage
VDET-
Min. operating
voltage
Hysteresis width

13. ELECTRICAL CHARACTERISTICS, DELAY CIRCUIT BUILT-IN PRODUCTS
8 EPSON S1F77B01 Technical Manual (Rev.1.3)
13. ELECTRICAL CHARACTERISTICS, DELAYCIRCUIT BUILT-IN PRODUCTS
(1) CMOS output (Ta=25°C RL=∞unless otherwise specified)
Item Symbol Conditions Min. Typ. Max. Unit
Detecting voltage VDET- - VDET-(S)×0.98 VDET-(S) VDET-(S)×1.02 V
Hysteresis width VHYS VHYS=(VDET+)-(VDET-) VDET-*0.03 VDET-*0.05 VDET-*0.07 V
VDD=2.5V, VDET-(S)=1.5V - 350 700
VDD=3.7V, VDET-(S)=2.7V - 350 700
Consumption current 1 ISS1
VDD=5.5V, VDET-(S)=4.6V
- 350 700
nA
VDD=1.3V, VDET-(S)=1.5V - 280 560
VDD=2.5V, VDET-(S)=2.7V - 280 560
Consumption current 2 ISS2
VDD=4.4V, VDET-(S)=4.6V
- 280 560
nA
Max. operating voltage VDDH - - - 5.5 V
Min. operating voltage VDDL - 0.9 - - V
VDD=0.9V, VDS=0.5V 0.2 0.8 1.5
VDD=1.2V, VDS=0.5V 1.0 2.2 3.5
IOUTN [Nch]
VDD<VDET- VDD=2.4V, VDS=0.5V 5.5 6.8 8.1
VDD=3.0V,
VDS=VDD-0.5V 2.5 4.5 7.0
VDD=4.0V,
VDS=VDD-0.5V 4.5 6.2 8.0
Output current
IOUTP [Pch]
VDD>VDET-
VDD=5.5V,
VDS=VDD-0.5V 6.5 8.2 9.8
mA
td=50ms 42.5 50 57.5
td=100ms 85 100 115
Delay time td
td=200ms 170 200 230
ms
Response time tPHL VDD: (VDET-(S))+1.0V ===> 0.9V - - 80 µs
Detecting voltage
temperature
coefficient
∆VDET
∆Topt -40°C≦Topt≦85°C
- ±100 - ppm/°C
(2) Nch open drain output (Ta=25°C RL=∞unless otherwise specified)
Item Symbol Conditions Min. Typ. Max. Unit
Detecting voltage VDET- - VDET-(S)×0.98 VDET-(S) VDET-(S)×1.02 V
Hysteresis width VHYS VHYS=(VDET+)-(VDET-) VDET-*0.03 VDET-*0.05 VDET-*0.07 V
VDD=2.5V, VDET-(S)=1.5V - 350 700
VDD=3.7V, VDET-(S)=2.7V - 350 700
Consumption current 1 ISS1
VDD=5.5V, VDET-(S)=4.6V
- 350 700
nA
VDD=1.3V, VDET-(S)=1.5V - 280 560
VDD=2.5V, VDET-(S)=2.7V - 280 560
Consumption current 2 ISS2
VDD=4.4V, VDET-(S)=4.6V
- 280 560
nA
Max. operating voltage VDDH - - - 5.5 V
Min. operating voltage VDDL - 0.9 - - V
VDD=0.9V, VDS=0.5V 0.2 0.8 1.5
VDD=1.2V, VDS=0.5V 1.0 2.2 3.5
Output current of
output transistor IOUTN [Nch] VDD<VDET- VDD=2.4V, VDS=0.5V 5.5 6.8 8.1
mA
Leak current of output
transistor ILEAK VDD=5.5V,VDS=5.5V
- - 0.1 µA
td=50ms 42.5 50 57.5
td=100ms 85 100 115
Delay time td
td=200ms 170 200 230
ms
Response time tPHL VDD: (VDET-(S))+1.0V ===> 0.9V - - 80 µs
Detecting voltage
temperature
coefficient
∆VDET
∆Topt -40°C≦Topt≦85°C
- ±100 - ppm/°C

14. CHARACTERISTIC MEASURING CIRCUITS
S1F77B01 Technical Manual (Rev.1.3) EPSON 9
14. CHARACTERISTIC MEASURING CIRCUITS
VDET-, VHYS, tPLH, td
Fig.1
ISS1, ISS2
Fig.2
Note: No pull-up resistor for
CMOS output
VSS
VDD VOUT
V
VDD
5V
470kΩ
V DS
A
B
A
: When fixed to DS=”LOW”
B: When fixed to DS=”HIGH”
VSS, DS
VOUT
VDD
A
VDD

14. CHARACTERISTIC MEASURING CIRCUITS
10 EPSON S1F77B01 Technical Manual (Rev.1.3)
IOUT Nch, ILEAK
Fig.3
IOUT Pch
Fig.4
VSS, DS
V
OUT
VDD A
V
DS
V
DD
VV
A
VDD
V
DD
VSS, DS
V
DS
V
V
VOUT

14. CHARACTERISTIC MEASURING CIRCUITS
S1F77B01 Technical Manual (Rev.1.3) EPSON 11
zDescription of tPHL
*3: VDET+ indicates the actual release voltage. VDET+=VDET-×1.05 (Typ.)
(1) For CMOS output
tPHL provides the timeframe ranging from a time when the pulse voltage (VDET+)+1.0V →0.9V is
applied to VDD, to a time when the output voltage reaches VDD/2.
(2) Nch open drain output
tPHL provides the timeframe ranging from a time when the pulse voltage (VDET+)+1.0V →0.9V is
applied to VDD, to a time when the output voltage reaches VDD/2.
The output pin is pulled up with 470kΩresistance and VDD power for measurement.
zDescription of td
(1) For CMOS output
td provides the timeframe ranging from a time when the pulse voltage 0.9V →(VDET+)+1.0V is
applied to VDD, to a time when the output voltage reaches VDD/2.
(2) For Nch open drain output
td provides the timeframe ranging from a time when the pulse voltage 0.9V →(VDET+)+1.0V is
applied to VDD, to a time when the output voltage reaches VDD/2.
The output pin is pulled up with 470kΩresistance and VDD power for measurement.
50%
tPHL
VDD=0.9V
Input: VDD
Output: VOUT
VOUT=VDD(0.9V)
VSS
VDD=VDET+ +1.0V
VDD=VDET++1.0V
*3
50%
VDD=VDET+ +1.0V
VDD=0.9V
Input: VDD
Output: VOUT
VOUT= 100 %
VSS
td

15. DIMENSIONS
12 EPSON S1F77B01 Technical Manual (Rev.1.3)
15. DIMENSIONS
･SOT23 5PIN
θ12.40
l21.00
θ0.95
bi0.80
Dimention In Millmeters
Symbol Min. Nom. Max.
D - 2.9 -
E - 1.6 -
AMax. - - 1.40
AL0 - 0.15
Ae - 1.1 -
e - 0.95 -
lo 0.3 - 0.5
C 0.1 - 0.26
L 0.2 - 0.6
L1 - 0.6 -
HE - 2.8 -
y - - 0.1
1 = 1mm
5PIN 4PIN
3PIN1PIN
D
E
HE
bi
l2
θ
θ θ1
S L1
L
U
y
S
e
b
A2A1
AMax.

15. DIMENSIONS
S1F77B01 Technical Manual (Rev.1.3) EPSON 13
･WCSP 4PIN
Top View
Bottom View
[Unit: mm]
Dimention In Millmeters
Symbol Min. Nom. Max.
D 0.82 0.92 1.02
E 0.82 0.92 1.02
A - - 0.67
A10.18 0.21 0.24
A2 - 0.40 -
e1 - 0.50 -
e2 - 0.50 -
e3 - 0.71 -
b 0.23 0.26 0.29
x - - 0.08
y - - 0.05
SD - 0.25 -
SE - 0.25 -
E
INDEX
A1 CORNER
D
S
A
A1 A2
yS
A1 CORNER
SE
1
e
3
e
SD
2
e
12
b
A
B

16. CHARACTERISTIC EXAMPLE
14 EPSON S1F77B01 Technical Manual (Rev.1.3)
S1F77B01Y15000R
0
100
200
300
400
500
600
700
0123456
VDD [V]
ISS[nA]
S1F77B01Y15000R
ISS[nA]
VDD[V]
16. CHARACTERISTIC EXAMPLE
(1) Detecting voltage (2) Release voltage
(3) Hysteresis width
(4) Consumption current
S1F77B01Y27000R
S1F77B01Y27000R
0
1
2
3
4
5
6
7
0246
VDD[V]
VOUT[V]
S1F77B01Y27000R
VOUT[V]
VDD[V]
S1F77B01Y27000R
0
1
2
3
4
5
6
7
0246
VDD[V]
VOUT[V]
S1F77B01Y27000R
VOUT[V]
VDD[V]
S1F77B01Y27000R
0
1
2
3
4
5
6
7
0246
VDD[V]
VOUT[V]
S1F77B01Y27000R
VOUT[V]
VDD[V]
S1F77B01Y27000R
0
50
100
150
200
250
300
350
400
450
0123456
VDD [V]
ISS[nA]
S1F77B01Y27000R
ISS[nA]
VDD[V]

16. CHARACTERISTIC EXAMPLE
S1F77B01 Technical Manual (Rev.1.3) EPSON 15
(5) Nch output current VDS=0.5V (CMOS) (6) Pch output current VDS=0.5V (CMOS)
(7) Delay time (100ms) (8) Response time
(9) Characteristics between detecting voltage and ambient temperature
* Ta=25°C unless otherwise specified
S1F77B01Y27000R
0
0.1
0.2
0.3
0.4
0.5
0.6
0 0.2 0.4 0.6 0.8 1
VDD[V]
IＯＵＴ[mA]
S1F77B01Y27000R
IOUT[mA]
VDD[V]
S1F77B01Y27000R
0.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
16.00
18.00
20.00
0.00 1.00 2.00 3.00
VDS[V]
IOUT[mA]
S1F77B01Y27000R
IOUT[mA]
VDS[V]
S1F77B01M15000R
1.450
1.470
1.490
1.510
1.530
1.550
-50 -25 0 25 50 75 100
温度 Temperature[℃]
検出電圧 Vdet-[V]
S1F77B01M15000R
Detecting VDET-[V]
Temperature[°C]
S1F77B01Y27000R
Tek STOP
S1F77B01Y27000R
Tek STOP

International Sales Operations
AMERICA
EPSON ELECTRONICS AMERICA, INC.
HEADQUARTERS
150 River Oaks Parkway
San Jose, CA 95134, U.S.A.
Phone: [phone] FAX: [phone]
SALES OFFICES
Northeast
301 Edgewater Place, Suite 210
Wakefield, MA 01880, U.S.A.
Phone: [phone] FAX: [phone]
EUROPE
EPSON EUROPE ELECTRONICS GmbH
HEADQUARTERS
Riesstrasse 15
80992 Munich, GERMANY
Phone: [phone] FAX: [phone]
DÜSSELDORF BRANCH OFFICE
Altstadtstrasse 176
51379 Leverkusen, GERMANY
Phone: [phone] FAX: [phone]
FRENCH BRANCH OFFICE
1 Avenue de l’Atlantique, LP 915 Les Conquerants
Z.A. de Courtaboeuf 2, F-91976 Les Ulis Cedex, FRANCE
Phone: [phone] FAX: [phone]
UK & IRELAND BRANCH OFFICE
8 The Square, Stockley Park, Uxbridge
Middx UB11 1FW, UNITED KINGDOM
Phone: [phone]
FAX: [phone]
Scotland Design Center
Integration House, The Alba Campus
Livingston West Lothian, EH54 7EG, SCOTLAND
Phone: [phone] FAX: [phone]
ASIA
EPSON (CHINA) CO., LTD.
23F, Beijing Silver Tower 2# North RD DongSanHuan
ChaoYang District, Beijing, CHINA
Phone: [phone] FAX: [phone]
SHANGHAI BRANCH
7F, High-Tech Bldg., 900, Yishan Road,
Shanghai 200233, CHINA
Phone: [phone] FAX: [phone]
EPSON HONG KONG LTD.
20/F., Harbour Centre, 25 Harbour Road
Wanchai, Hong Kong
Phone: [phone] FAX: [phone]
Telex: 65542 EPSCO HX
EPSON Electronic Technology Development (Shenzhen)
LTD.
12/F, Dawning Mansion, Keji South 12th Road,
Hi- Tech Park, Shenzhen
Phone: [phone] FAX: [phone]
EPSON TAIWAN TECHNOLOGY & TRADING LTD.
14F, No. 7, Song Ren Road,
Taipei 110
Phone: [phone] FAX: [phone]
EPSON SINGAPORE PTE., LTD.
1 HarbourFront Place,
#03-02 HarbourFront Tower One, Singapore 098633
Phone: [phone] FAX: [phone]
SEIKO EPSON CORPORATION
KOREA OFFICE
50F, KLI 63 Bldg., 60 Yoido-dong
Youngdeungpo-Ku, Seoul, 150-763, KOREA
Phone: [phone] FAX: [phone]
GUMI OFFICE
2F, Grand B/D, 457-4 Songjeong-dong,
Gumi-City, KOREA
Phone: [phone] FAX: [phone]
SEIKO EPSON CORPORATION
SEMICONDUCTOR OPERATIONS DIVISION
IC Sales Dept.
IC International Sales Group
421-8, Hino, Hino-shi, Tokyo 191-8501, JAPAN
Phone: [phone] FAX: [phone]
Document Code: 410800400
First Issue October 2006
Printed in JAPAN ○
H